JP2020205553A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2020205553A JP2020205553A JP2019112866A JP2019112866A JP2020205553A JP 2020205553 A JP2020205553 A JP 2020205553A JP 2019112866 A JP2019112866 A JP 2019112866A JP 2019112866 A JP2019112866 A JP 2019112866A JP 2020205553 A JP2020205553 A JP 2020205553A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 51
- 238000001514 detection method Methods 0.000 claims abstract description 177
- 230000015556 catabolic process Effects 0.000 claims description 3
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims 2
- 238000013021 overheating Methods 0.000 abstract description 8
- 238000010586 diagram Methods 0.000 description 9
- 230000005856 abnormality Effects 0.000 description 4
- 101100489713 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) GND1 gene Proteins 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K3/00—Thermometers giving results other than momentary value of temperature
- G01K3/005—Circuits arrangements for indicating a predetermined temperature
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
- H02H3/087—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current for dc applications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
- G01R19/16528—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values using digital techniques or performing arithmetic operations
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/569—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for protection
- G05F1/573—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for protection with overcurrent detector
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H5/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection
- H02H5/04—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
- H02H5/041—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature additionally responsive to excess current
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/006—Calibration or setting of parameters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
- H02H9/025—Current limitation using field effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K2017/0806—Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
- H03K3/037—Bistable circuits
- H03K3/0377—Bistables with hysteresis, e.g. Schmitt trigger
Abstract
Description
Vout=VCC−1A×50mΩ=VCC−50mV
となる。
Vout=VCC−3A×50mΩ=VCC−150mV
となる。
11 メインMOSFET(パワー半導体スイッチ)
12 論理回路
13 ドライバ回路
14 過電流検出回路
15 過熱検出回路
16 高電圧検出回路
20 負荷
31 定電流回路
32,33,34,35 ダイオード
36 シュミットトリガインバータ回路
37 MOSFET(スイッチ素子)
38 論理和回路
41 インバータ回路
51,52 定電流回路
53,54_1−54_n ツェナーダイオード
55 インバータ回路
Claims (9)
- 電源端子と出力端子との間に接続されたパワー半導体スイッチと、
入力端子に入力された信号に応じて前記パワー半導体スイッチをオン・オフさせる論理出力信号を生成する論理回路と、
前記パワー半導体スイッチの温度が過熱検出閾値を超えたときに前記論理回路へ過熱検出信号を送出する過熱検出回路と、
前記パワー半導体スイッチの電流が所定の値を検出したときに前記論理回路へ過電流検出信号を送出する過電流検出回路と、
を備え、
前記過熱検出回路は、前記過電流検出信号を受けて前記過熱検出閾値を正常動作時の第1の閾値から前記第1の閾値より低い第2の閾値に変更するようにした、半導体装置。 - 前記論理回路は、前記過電流検出信号が入力されると、前記論理出力信号として前記パワー半導体スイッチをチョッピング動作させる信号を生成して出力する、請求項1記載の半導体装置。
- 前記過熱検出回路は、複数のダイオードを直列に接続した温度検出センサと、前記過電流検出信号を受けて前記複数のダイオードの一部を短絡するスイッチ素子とを有している、請求項1記載の半導体装置。
- 前記電源端子に印加される電源電圧が所定の電圧を超えたときに前記過熱検出回路へ高電圧検出信号を送出し、過熱であると判断される前記過熱検出閾値を前記第1の閾値から前記第2の閾値に変更させる高電圧検出回路を備えた、請求項1ないし3のいずれか1項に記載の半導体装置。
- 前記過熱検出回路は、複数のダイオードを直列に接続した温度検出センサと、前記過電流検出信号および前記高電圧検出信号を入力する論理和回路と、前記論理和回路の出力を受けて前記複数のダイオードの一部を短絡するスイッチ素子とを有している、請求項4記載の半導体装置。
- 前記過電流検出回路は、前記出力端子の電圧を入力し、前記パワー半導体スイッチのオン抵抗による電圧降下が出力反転閾値よりも低いとき前記過電流検出信号を出力するインバータ回路を有している、請求項1記載の半導体装置。
- 電源端子と出力端子との間に接続されたパワー半導体スイッチと、
入力端子に入力された信号に応じて前記パワー半導体スイッチをオン・オフさせる論理出力信号を生成する論理回路と、
前記パワー半導体スイッチの温度が過熱検出閾値を超えたときに前記論理回路へ過熱検出信号を送出する過熱検出回路と、
前記電源端子に印加される電源電圧が所定の電圧を超えたときに前記過熱検出回路へ高電圧検出信号を送出する高電圧検出回路と、
を備え、
前記過熱検出回路は、前記高電圧検出信号を受けて前記過熱検出閾値を正常動作時の第1の閾値から前記第1の閾値より低い第2の閾値に変更するようにした、半導体装置。 - 前記過熱検出回路は、複数のダイオードを直列に接続した温度検出センサと、前記高電圧検出信号を受けて前記複数のダイオードの一部を短絡するスイッチ素子とを有している、請求項7記載の半導体装置。
- 前記高電圧検出回路は、前記電源端子とグランド端子との間に直列に接続された第1の定電流回路、第2の定電流回路および複数のツェナーダイオードと、前記第1の定電流回路に並列に接続されて前記電源端子の電圧を基準とした論理信号を生成する論理信号生成用ツェナーダイオードと、前記第1の定電流回路および前記第2の定電流回路の接続部の電圧を入力し、前記電源端子に印加される電圧が前記論理信号生成用ツェナーダイオードおよび前記複数のツェナーダイオードの降伏電圧の和より高いとき前記高電圧検出信号を出力するインバータ回路とを有している、請求項7記載の半導体装置。
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US16/864,438 US11329474B2 (en) | 2019-06-18 | 2020-05-01 | Switching controller with adaptive overheating protection |
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CN113098470A (zh) * | 2021-03-08 | 2021-07-09 | 杭州海康消防科技有限公司 | 负载开关电路 |
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US11280811B2 (en) * | 2019-06-17 | 2022-03-22 | Advanced Energy Industries, Inc. | High side current monitor |
US11579645B2 (en) * | 2019-06-21 | 2023-02-14 | Wolfspeed, Inc. | Device design for short-circuitry protection circuitry within transistors |
CN113485181B (zh) * | 2021-06-30 | 2022-07-08 | 浙江中控技术股份有限公司 | 一种基于故障检测的通信总线控制系统 |
CN113933703B (zh) * | 2021-09-23 | 2024-04-26 | 交控科技股份有限公司 | 转辙机功率采集系统、方法、对象控制器和存储介质 |
Citations (3)
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JP2011061948A (ja) * | 2009-09-09 | 2011-03-24 | Renesas Electronics Corp | 半導体装置および回路保護方法 |
JP2016001822A (ja) * | 2014-06-12 | 2016-01-07 | 富士電機株式会社 | 負荷駆動回路 |
JP2017126953A (ja) * | 2016-01-15 | 2017-07-20 | 富士電機株式会社 | 半導体装置 |
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JP4934491B2 (ja) * | 2007-05-09 | 2012-05-16 | 株式会社リコー | 過熱保護回路およびそれを具備する電子機器、ならびにその制御方法 |
JP5189929B2 (ja) * | 2008-08-19 | 2013-04-24 | ルネサスエレクトロニクス株式会社 | 半導体スイッチ制御装置 |
JP5749285B2 (ja) | 2013-02-14 | 2015-07-15 | 古河電気工業株式会社 | 電源供給装置 |
EP2882103B1 (en) * | 2013-12-04 | 2019-05-29 | ABB Schweiz AG | Method and apparatus for short circuit protection of power semiconductor switch |
JP6825831B2 (ja) | 2016-06-21 | 2021-02-03 | ローム株式会社 | 電源装置 |
JP6885862B2 (ja) * | 2017-12-28 | 2021-06-16 | ルネサスエレクトロニクス株式会社 | 電力変換装置 |
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JP2011061948A (ja) * | 2009-09-09 | 2011-03-24 | Renesas Electronics Corp | 半導体装置および回路保護方法 |
JP2016001822A (ja) * | 2014-06-12 | 2016-01-07 | 富士電機株式会社 | 負荷駆動回路 |
JP2017126953A (ja) * | 2016-01-15 | 2017-07-20 | 富士電機株式会社 | 半導体装置 |
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CN113098470A (zh) * | 2021-03-08 | 2021-07-09 | 杭州海康消防科技有限公司 | 负载开关电路 |
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