JP2020191375A5 - - Google Patents

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Publication number
JP2020191375A5
JP2020191375A5 JP2019095705A JP2019095705A JP2020191375A5 JP 2020191375 A5 JP2020191375 A5 JP 2020191375A5 JP 2019095705 A JP2019095705 A JP 2019095705A JP 2019095705 A JP2019095705 A JP 2019095705A JP 2020191375 A5 JP2020191375 A5 JP 2020191375A5
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JP
Japan
Prior art keywords
gas
diffusion chamber
gas diffusion
processing method
substrate processing
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JP2019095705A
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English (en)
Japanese (ja)
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JP7068230B2 (ja
JP2020191375A (ja
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Priority to JP2019095705A priority Critical patent/JP7068230B2/ja
Priority claimed from JP2019095705A external-priority patent/JP7068230B2/ja
Priority to US16/881,073 priority patent/US11043389B2/en
Publication of JP2020191375A publication Critical patent/JP2020191375A/ja
Publication of JP2020191375A5 publication Critical patent/JP2020191375A5/ja
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JP2019095705A 2019-05-22 2019-05-22 基板処理方法 Active JP7068230B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2019095705A JP7068230B2 (ja) 2019-05-22 2019-05-22 基板処理方法
US16/881,073 US11043389B2 (en) 2019-05-22 2020-05-22 Substrate processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019095705A JP7068230B2 (ja) 2019-05-22 2019-05-22 基板処理方法

Publications (3)

Publication Number Publication Date
JP2020191375A JP2020191375A (ja) 2020-11-26
JP2020191375A5 true JP2020191375A5 (enExample) 2022-03-18
JP7068230B2 JP7068230B2 (ja) 2022-05-16

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JP2019095705A Active JP7068230B2 (ja) 2019-05-22 2019-05-22 基板処理方法

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US (1) US11043389B2 (enExample)
JP (1) JP7068230B2 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024057509A1 (ja) * 2022-09-15 2024-03-21 日本碍子株式会社 ＸｅＦ２ドライエッチングシステム及びプロセス

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07115091A (ja) * 1993-10-18 1995-05-02 Sony Corp 半導体装置における絶縁膜形成方法及びｃｖｄ装置
JPH08115972A (ja) * 1994-10-18 1996-05-07 Toshiba Corp 半導体製造装置及びこの装置を用いた半導体装置の製造方法
US7138336B2 (en) * 2001-08-06 2006-11-21 Asm Genitech Korea Ltd. Plasma enhanced atomic layer deposition (PEALD) equipment and method of forming a conducting thin film using the same thereof
US20040261712A1 (en) * 2003-04-25 2004-12-30 Daisuke Hayashi Plasma processing apparatus
US7708859B2 (en) 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
JP4572100B2 (ja) * 2004-09-28 2010-10-27 日本エー・エス・エム株式会社 プラズマ処理装置
JP2010157660A (ja) * 2009-01-05 2010-07-15 Toyota Motor Corp 熱処理装置および熱処理方法
JP5937385B2 (ja) * 2012-03-16 2016-06-22 東京エレクトロン株式会社 半導体製造装置のガス供給方法、ガス供給システム及び半導体製造装置
JP6423706B2 (ja) * 2014-12-16 2018-11-14 東京エレクトロン株式会社 プラズマ処理装置
KR102587626B1 (ko) * 2018-09-10 2023-10-11 삼성전자주식회사 건식 세정 장치 및 건식 세정 방법
CN109273339B (zh) * 2018-09-18 2021-03-19 惠科股份有限公司 一种反应室、干法刻蚀设备及刻蚀方法

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