JP2020184553A - 熱処理装置、熱処理方法及び成膜方法 - Google Patents
熱処理装置、熱処理方法及び成膜方法 Download PDFInfo
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Abstract
Description
一実施形態の熱処理装置について説明する。図1は、一実施形態の熱処理装置の構成例を示す断面図である。図2は、内管に形成された開口と温度センサの位置関係を説明するための図である。
一実施形態の成膜方法について、前述の熱処理装置1を用いて原子層堆積(ALD:Atomic Layer Deposition)法により、薄膜を成膜する場合を例に挙げて説明する。一実施形態の成膜方法で成膜可能な薄膜としては、例えばSiO2、ZrO2、HfO2、TiO2、Al2O3等の酸化膜、SiN、HfN、TiN、AlNの窒化膜、ZrAlO、HfAlO、HfSiON等の上記化合物を組み合わせた複合膜が挙げられる。
第1のパージステップ:不活性ガス(10〜50slm)、時間(10〜60秒)
窒化ステップ:窒化ガス(15〜25slm)、時間(60〜180秒)
第2のパージステップ:不活性ガス(10〜50slm)、時間(10〜60秒)
一実施形態の成膜方法を実施し、温度センサの検出温度の安定性を評価した実施例について説明する。
第1のパージステップ:N2ガス(10〜50slm)
窒化ステップ:N2ガス(15〜25slm)
第2のパージステップ:N2ガス(10〜50slm)
10 処理容器
12 内管
14 外管
22 開口
52,54,56 ガス供給管
52a,54a,56a ガス孔
60 ガス出口
70a〜70e ヒータ
80a〜80e 温度センサ
100 制御部
W ウエハ
Claims (10)
- 基板を収容する円筒形状の内管と、
前記内管の外側を覆う外管と、
前記外管の周囲に設けられたヒータと、
前記内管内に長手方向に沿って延在するガス供給管と、
前記ガス供給管と対向する前記内管の側壁に形成された開口と、
前記内管の周方向において前記開口の位置から所定角度ずれた位置に設けられた温度センサと、
前記温度センサの検出値に基づいて前記ヒータを制御する制御部と、
を備える、
熱処理装置。 - 前記温度センサは、前記内管と前記外管との間に設けられている、
請求項1に記載の熱処理装置。 - 前記内管の周方向において前記開口と異なる位置に設けられたガス出口を備え、
前記温度センサは、前記内管の周方向において前記ガス出口から遠い側に設けられている、
請求項1又は2に記載の熱処理装置。 - 前記所定角度は、0度より大きく90度以下である、
請求項1乃至3のいずれか一項に記載の熱処理装置。 - 前記ガス供給管には、長手方向に沿って複数のガス孔が形成されている、
請求項1乃至4のいずれか一項に記載の熱処理装置。 - 前記内管内には、複数の基板が上下方向に沿って所定間隔を有して略水平に収容される、
請求項1乃至5のいずれか一項に記載の熱処理装置。 - 前記温度センサは、前記内管の長手方向に沿って配置された複数の測温部を有する、
請求項1乃至6のいずれか一項に記載の熱処理装置。 - 前記温度センサは、熱電対又は測温抵抗体である、
請求項1乃至7のいずれか一項に記載の熱処理装置。 - 基板を収容する円筒形状の内管と、
前記内管の外側を覆う外管と、
前記外管の周囲に設けられたヒータと、
前記内管内に長手方向に沿って延在するガス供給管と、
前記ガス供給管と対向する前記内管の側壁に形成された開口と、
を備える熱処理装置によって前記基板を熱処理する熱処理方法であって、
前記開口の位置から前記内管の周方向において所定角度ずれた位置に設けられた温度センサの検出値に基づいて前記ヒータを制御する、
熱処理方法。 - 基板を収容する円筒形状の内管と、
前記内管の外側を覆う外管と、
前記外管の周囲に設けられたヒータと、
前記内管の内壁に長手方向に沿って延在する複数のガス供給管と、
前記複数のガス供給管と対向する前記内管の側壁に形成された開口と、
を備える熱処理装置によって前記基板に膜を堆積させる成膜方法であって、
前記開口の位置から前記内管の周方向において所定角度ずれた位置に設けられた温度センサの検出値に基づいて前記ヒータを制御しながら、前記基板に前記複数のガス供給管から複数の原料ガスを交互に供給することにより、前記基板の上に膜を堆積させる、
成膜方法。
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