JP2020173197A5 - - Google Patents

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JP2020173197A5
JP2020173197A5 JP2019076005A JP2019076005A JP2020173197A5 JP 2020173197 A5 JP2020173197 A5 JP 2020173197A5 JP 2019076005 A JP2019076005 A JP 2019076005A JP 2019076005 A JP2019076005 A JP 2019076005A JP 2020173197 A5 JP2020173197 A5 JP 2020173197A5
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semiconductor element
semiconductor
semiconductor device
electrically connected
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JP2019076005A
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JP7356088B2 (ja
JP2020173197A (ja
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JP2019076005A 2019-04-12 2019-04-12 半導体試験装置および半導体素子の試験方法 Active JP7356088B2 (ja)

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JP2019076005A JP7356088B2 (ja) 2019-04-12 2019-04-12 半導体試験装置および半導体素子の試験方法

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Application Number Priority Date Filing Date Title
JP2019076005A JP7356088B2 (ja) 2019-04-12 2019-04-12 半導体試験装置および半導体素子の試験方法

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JP2020173197A JP2020173197A (ja) 2020-10-22
JP2020173197A5 true JP2020173197A5 (enExample) 2021-12-02
JP7356088B2 JP7356088B2 (ja) 2023-10-04

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020246300A1 (ja) * 2019-06-04 2020-12-10 株式会社クオルテック 半導体素子試験装置および半導体素子の試験方法
JPWO2024106052A1 (enExample) * 2022-11-17 2024-05-23
CN116203373B (zh) * 2023-03-03 2023-11-07 中山大学 一种多功能半导体场效应晶体管测试电路与方法
WO2025185835A1 (en) 2024-03-08 2025-09-12 Advantest Corporation Power switch and method for operating a power switch using a switchable current source

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61108978A (ja) * 1984-11-01 1986-05-27 Nec Corp 半導体装置の熱抵抗測定方法
JPH06281693A (ja) * 1992-08-28 1994-10-07 Fuji Electric Co Ltd 半導体装置の熱抵抗測定方法
JPH0727817A (ja) * 1993-07-09 1995-01-31 Toshiba Corp 半導体素子の断続動作試験方法およびその装置
JPH1114694A (ja) * 1997-06-20 1999-01-22 Sanmei Denki Kk パワーモジュールにおけるワイヤボンディング部の耐久性能試験方法
JP5035700B2 (ja) 2009-02-02 2012-09-26 三菱電機株式会社 逆バイアス安全動作領域測定装置
JP2013088146A (ja) 2011-10-13 2013-05-13 Advantest Corp 試験装置
JP6790780B2 (ja) 2016-12-09 2020-11-25 株式会社デンソー 半導体素子の検査装置および検査方法

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