JP2020170831A - 発光装置の製造方法 - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
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- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
Description
(発光装置)
(発光素子20)
(光反射性樹脂層50)
(基板52)
(接着層60)
(光拡散層72)
(波長変換シート70)
(発光装置の製造方法)
(中間体1)
(発光素子20を配置する工程)
(被覆層30を形成する工程)
(配線電極40を形成する工程)
[実施形態5]
100、200、300、400、500…発光装置
1…中間体
2…発光装置
10…支持部材
11…剥離層
12…保護層
13…第二接着層
20…発光素子
20a…電極形成面
20b…発光面
21…素子電極
30…被覆層
40…配線電極
41…第一金属層
42…第二金属層
50…光反射性樹脂層
51…光反射性樹脂
52…基板
60…接着層
62…接着樹脂
70、70B…波長変換シート
72…光拡散層
72B…光拡散シート
80…光学シート
90…ケース
M…マスク
RS…レジスト
PG…プレス用ガラス基板
PP…プレス板
PS…剥離シート
Claims (11)
- 複数の発光素子を備える発光装置の製造方法であって、
支持部材と、
前記支持部材の上に設けられる複数の発光素子と、
前記支持部材上であって、前記発光素子の周囲に設けられる被覆層と、
前記発光素子の上から前記被覆層の上にわたって設けられた配線電極と、
を備える中間体と、
光反射性樹脂を塗布した基板と、
を準備する工程と、
前記中間体を、前記基板上に塗布した光反射性樹脂に、前記配線電極側の面を対向させた姿勢でプレスする工程と、
前記光反射性樹脂を硬化させて光反射性樹脂層を形成する工程と、
前記支持部材を除去する工程と、
を含む発光装置の製造方法。 - 請求項1に記載の発光装置の製造方法であって、
前記前記中間体を光反射性樹脂にプレスする工程において、前記中間体を、未硬化または半硬化状態の光反射性樹脂にプレスする発光装置の製造方法。 - 請求項1又は2に記載の発光装置の製造方法であって、さらに、
前記支持部材を除去する工程の後に、
前記複数の発光素子を覆うように、未硬化の接着樹脂を塗布し、波長変換部材を含む波長変換シートを載置する工程と、
前記接着樹脂を硬化させて接着層を形成する工程と、
を含む発光装置の製造方法。 - 請求項3に記載の発光装置の製造方法であって、
前記波長変換シートを未硬化の接着樹脂に載置する工程が、
前記波長変換シートの、前記未硬化の接着樹脂と接着させる面側に、予め光拡散層を形成する工程と、
前記波長変換シートの前記光拡散層を、前記未硬化の接着樹脂と接着させる工程を含む発光装置の製造方法。 - 請求項1〜4のいずれか一項に記載の発光装置の製造方法であって、
前記光反射性樹脂が、熱硬化性の樹脂である発光装置の製造方法。 - 請求項1〜5のいずれか一項に記載の発光装置の製造方法であって、
前記基板が、絶縁性の基板である発光装置の製造方法。 - 請求項1〜6のいずれか一項に記載の発光装置の製造方法であって、
前記基板が、BN基板である発光装置の製造方法。 - 請求項1〜7のいずれか一項に記載の発光装置の製造方法であって、
前記中間体を準備する工程が、前記複数の発光素子を、前記支持部材の上に、複数の行と列とに配列して設ける工程を含む発光装置の製造方法。 - 請求項8に記載の発光装置の製造方法であって、
前記中間体を準備する工程が、前記複数の発光素子を、前記支持部材上に、中央部分は一定間隔で、前記支持部材の周辺領域においては間隔を密にして設ける工程を含む発光装置の製造方法。 - 請求項1〜9のいずれか一項に記載の発光装置の製造方法であって、
前記光反射性樹脂層は、厚さを100μm〜200μmとしてなる発光装置の製造方法。 - 請求項1〜10のいずれか一項に記載の発光装置の製造方法であって、
前記基板は、厚さを100μm〜200μmとしてなる発光装置の製造方法。
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JP2019073166A JP6933817B2 (ja) | 2019-04-05 | 2019-04-05 | 発光装置の製造方法 |
US16/838,697 US11538966B2 (en) | 2019-04-05 | 2020-04-02 | Method of manufacturing light emitting device |
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US10971659B2 (en) * | 2019-06-03 | 2021-04-06 | Bridgelux, Inc. | White light emitting device comprising multiple photoluminescence materials |
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Patent Citations (4)
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