JP2020150174A - 赤外線検出器、これを用いた撮像装置、及び赤外線検出器の製造方法 - Google Patents
赤外線検出器、これを用いた撮像装置、及び赤外線検出器の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 238000003384 imaging method Methods 0.000 title claims description 10
- 239000012535 impurity Substances 0.000 claims abstract description 46
- 239000000463 material Substances 0.000 claims abstract description 33
- 239000004065 semiconductor Substances 0.000 claims abstract description 30
- 238000009792 diffusion process Methods 0.000 claims abstract description 23
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims 1
- 229910001928 zirconium oxide Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 105
- 229910005542 GaSb Inorganic materials 0.000 description 27
- 238000000034 method Methods 0.000 description 23
- 229910000673 Indium arsenide Inorganic materials 0.000 description 21
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 21
- 239000000758 substrate Substances 0.000 description 18
- 238000005530 etching Methods 0.000 description 12
- 239000011241 protective layer Substances 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- IKWTVSLWAPBBKU-UHFFFAOYSA-N a1010_sial Chemical compound O=[As]O[As]=O IKWTVSLWAPBBKU-UHFFFAOYSA-N 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- 229910000410 antimony oxide Inorganic materials 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 229910000413 arsenic oxide Inorganic materials 0.000 description 3
- 229960002594 arsenic trioxide Drugs 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 3
- 229910001195 gallium oxide Inorganic materials 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 150000002894 organic compounds Chemical class 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- 229910017115 AlSb Inorganic materials 0.000 description 2
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 2
- -1 carbon and hydrogen Chemical class 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000002052 molecular layer Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
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Abstract
Description
第1電極層、受光層、及び第2電極層がこの順に積層された半導体の積層体と、
前記積層体に接して前記積層体の表面を覆う第1絶縁膜と、
前記第1絶縁膜と前記積層体の界面と反対側の面で、前記第1絶縁膜と接して前記第1絶縁膜を覆う第2絶縁膜と、
を有し、
前記第1絶縁膜は、前記積層体を形成する材料の酸化物よりもギブスの自由エネルギーが小さく、
前記第2絶縁膜は、前記第1絶縁膜よりも膜中の不純物拡散が大きい。
式(1)の右辺第1項は、受光層の内部を流れるバルク成分IBulkであり、右辺第2項は、受光層の側壁表面とその近傍を流れる成分Isurfaceである。検出器の性能を向上するにあたり、側壁表面とその近傍を流れる電流成分(以下、「表面リーク電流」と呼ぶ)の低減が重要になる。
ここで、Nは、絶縁膜と半導体の界面(第1界面I/F1)から任意の距離における絶縁膜中の不純物濃度を示す。N0は、絶縁膜と半導体の界面における不純物の初期濃度、sは界面からの距離、aは拡散長である。拡散長が大きいほど、界面から不純物が遠ざかることを示す。
図7は、実施形態の変形例として、赤外線検出器10Aの断面模式図を示す。赤外線検出器10Aは、二層の保護層20Aを除いて、実施形態の赤外線検出器10と同じ構成であり、重複する説明を省略する。
図8は、実施形態の赤外線検出器10または変形例の赤外線検出器10A(以下、単に「赤外線検出器10」とする)を用いた撮像装置50の模式図である。図8の(A)は概略平面図、図8の(B)は概略斜視図である。
11 基板
12 バッファ層
13 エッチングストッパ層
14 第1電極層
15 受光層
16 第2電極層
17、18 オーミック電極
19 メサ
20 保護層
21,21A 第1絶縁膜
22 第2絶縁膜
23 電極パッド
24 バンプ電極
30 駆動回路
50 撮像装置
51 集光レンズ
60 プロセッサ
70 ディスプレイ
100 撮像システム
101 画素
102 ダミー画素
105 積層体
110 画素領域
120 ダミー領域
Claims (9)
- 第1電極層、受光層、及び第2電極層がこの順に積層された半導体の積層体と、
前記積層体に接して前記積層体の表面を覆う第1絶縁膜と、
前記第1絶縁膜と前記積層体の界面と反対側の面で、前記第1絶縁膜と接して前記第1絶縁膜を覆う第2絶縁膜と、
を有し、
前記第1絶縁膜は、前記積層体を形成する材料の酸化物よりもギブスの自由エネルギーが小さく、
前記第2絶縁膜は、前記第1絶縁膜よりも膜中の不純物の拡散が大きい、
ことを特徴とする赤外線検出器。 - 前記第1絶縁膜は、酸化アルミニウム、酸化ハフニウム、酸化チタン、及び酸化ジルコニウムから選択されることを特徴とする請求項1に記載の赤外線検出器。
- 前記第1絶縁膜は、酸化ケイ素に、アルミニウム、ハフニウム、チタン、ジルコニウムから選択される1以上の元素が含まれた膜であることを特徴とする請求項1に記載の赤外線検出器。
- 前記第1絶縁膜の厚さは、25nm以下であることを特徴とする請求項1〜3のいずれか1項に記載の赤外線検出器。
- 前記第2絶縁膜は、酸化ケイ素、窒化ケイ素から選択される膜であることを特徴とする請求項1〜4のいずれか1項に記載の赤外線検出器。
- 前記不純物は、炭素または水素であることを特徴とする請求項1〜5のいずれか1項に記載の赤外線検出器。
- 前記受光層は、タイプII超格子で形成されていることを特徴とする請求項1〜6のいずれか1項に記載の赤外線検出器。
- 請求項1〜7のいずれか1項に記載の赤外線検出器と、
前記赤外線検出器と電気的に接続される駆動回路と、
を有する撮像装置。 - 第1電極層、受光層、及び第2電極層をこの順に積層された半導体の積層体を形成し、
前記積層体に接して前記積層体の表面を覆う第1絶縁膜を、前記積層体を形成する材料の酸化物よりもギブスの自由エネルギーが小さい第1の材料で形成し、
前記第1絶縁膜と接して前記第1絶縁膜を覆う第2絶縁膜を、前記第1絶縁膜よりも膜中の不純物拡散が大きい第2の材料で形成する、
ことを特徴とする赤外線検出器の製造方法。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021163808A (ja) * | 2020-03-31 | 2021-10-11 | 住友電気工業株式会社 | 光検出装置 |
JP7503080B2 (ja) | 2019-06-19 | 2024-06-19 | コンプテック ソリューションズ オーユー | 光電子デバイス |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11415538B2 (en) | 2020-03-06 | 2022-08-16 | Applied Materials, Inc. | Capacitive sensor housing for chamber condition monitoring |
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Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5288989A (en) * | 1993-04-02 | 1994-02-22 | General Electric Company | Avalanche photodiode with moisture resistant passivation coating disposed to cover the outer periphery of the photodiode body except at a selected top contact area |
JPH0738141A (ja) * | 1993-07-20 | 1995-02-07 | Hitachi Ltd | アバランシェフォトダイオード |
JPH09191123A (ja) * | 1996-01-10 | 1997-07-22 | Hitachi Ltd | 化合物半導体受光装置 |
CN101335308A (zh) * | 2008-07-30 | 2008-12-31 | 中国科学院上海技术物理研究所 | 一种具有内增益的紫外探测器及制备方法 |
JP2010267936A (ja) * | 2009-05-18 | 2010-11-25 | Sharp Corp | 窒化物半導体装置および窒化物半導体装置製造方法 |
JP2011501415A (ja) * | 2007-10-11 | 2011-01-06 | ヤオ ジエ | フォトディテクタアレイおよび半導体イメージインテンシファイア |
JP2013211458A (ja) * | 2012-03-30 | 2013-10-10 | Asahi Kasei Electronics Co Ltd | 赤外線センサ |
JP2013222922A (ja) * | 2012-04-19 | 2013-10-28 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP2015073029A (ja) * | 2013-10-03 | 2015-04-16 | 三菱電機株式会社 | 赤外線固体撮像素子 |
JP2016111295A (ja) * | 2014-12-10 | 2016-06-20 | 住友電気工業株式会社 | 半導体受光素子を作製する方法、半導体受光素子 |
JP2016197670A (ja) * | 2015-04-03 | 2016-11-24 | 富士電機株式会社 | 半導体装置 |
JP2016206642A (ja) * | 2014-11-26 | 2016-12-08 | 株式会社半導体エネルギー研究所 | 表示装置、および電子機器 |
JP2017015507A (ja) * | 2015-06-30 | 2017-01-19 | 旭化成エレクトロニクス株式会社 | 赤外線センサ素子及びその製造方法 |
JP2018006415A (ja) * | 2016-06-28 | 2018-01-11 | 富士通株式会社 | 赤外線検知素子、赤外線検知素子アレイ及び赤外線検知素子を用いて赤外線を検知する方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11153482A (ja) | 1997-11-20 | 1999-06-08 | Osaka Gas Co Ltd | 半導体火炎センサ |
JP5771900B2 (ja) * | 2010-03-26 | 2015-09-02 | セイコーエプソン株式会社 | 熱型光検出器、熱型光検出装置及び電子機器 |
JP5288640B2 (ja) * | 2010-03-31 | 2013-09-11 | 富士フイルム株式会社 | 撮像素子及びその製造方法 |
CN102564601A (zh) * | 2010-12-22 | 2012-07-11 | 精工爱普生株式会社 | 热式光检测装置、电子设备、热式光检测器及其制造方法 |
JP5662893B2 (ja) * | 2011-07-25 | 2015-02-04 | 富士フイルム株式会社 | 光電変換素子用蒸着材料及び光電変換素子、センサ、撮像素子 |
CN104247022A (zh) | 2012-04-19 | 2014-12-24 | 松下知识产权经营株式会社 | 固体摄像装置以及其制造方法 |
US10158035B2 (en) * | 2015-04-22 | 2018-12-18 | Sumitomo Electric Industries, Ltd. | Semiconductor stack, light-receiving device, and method for producing semiconductor stack |
US10573621B2 (en) * | 2016-02-25 | 2020-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Imaging system and manufacturing apparatus |
-
2019
- 2019-03-14 JP JP2019047590A patent/JP7283148B2/ja active Active
-
2020
- 2020-01-31 US US16/777,933 patent/US11193832B2/en active Active
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5288989A (en) * | 1993-04-02 | 1994-02-22 | General Electric Company | Avalanche photodiode with moisture resistant passivation coating disposed to cover the outer periphery of the photodiode body except at a selected top contact area |
JPH0738141A (ja) * | 1993-07-20 | 1995-02-07 | Hitachi Ltd | アバランシェフォトダイオード |
JPH09191123A (ja) * | 1996-01-10 | 1997-07-22 | Hitachi Ltd | 化合物半導体受光装置 |
JP2011501415A (ja) * | 2007-10-11 | 2011-01-06 | ヤオ ジエ | フォトディテクタアレイおよび半導体イメージインテンシファイア |
CN101335308A (zh) * | 2008-07-30 | 2008-12-31 | 中国科学院上海技术物理研究所 | 一种具有内增益的紫外探测器及制备方法 |
JP2010267936A (ja) * | 2009-05-18 | 2010-11-25 | Sharp Corp | 窒化物半導体装置および窒化物半導体装置製造方法 |
JP2013211458A (ja) * | 2012-03-30 | 2013-10-10 | Asahi Kasei Electronics Co Ltd | 赤外線センサ |
JP2013222922A (ja) * | 2012-04-19 | 2013-10-28 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP2015073029A (ja) * | 2013-10-03 | 2015-04-16 | 三菱電機株式会社 | 赤外線固体撮像素子 |
JP2016206642A (ja) * | 2014-11-26 | 2016-12-08 | 株式会社半導体エネルギー研究所 | 表示装置、および電子機器 |
JP2016111295A (ja) * | 2014-12-10 | 2016-06-20 | 住友電気工業株式会社 | 半導体受光素子を作製する方法、半導体受光素子 |
JP2016197670A (ja) * | 2015-04-03 | 2016-11-24 | 富士電機株式会社 | 半導体装置 |
JP2017015507A (ja) * | 2015-06-30 | 2017-01-19 | 旭化成エレクトロニクス株式会社 | 赤外線センサ素子及びその製造方法 |
JP2018006415A (ja) * | 2016-06-28 | 2018-01-11 | 富士通株式会社 | 赤外線検知素子、赤外線検知素子アレイ及び赤外線検知素子を用いて赤外線を検知する方法 |
Non-Patent Citations (2)
Title |
---|
SALIHOGLU, OMER: "Atomic layer deposited passivation layers for superlattice photodetectors", JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 32, no. 5, JPN6022050630, 23 July 2014 (2014-07-23), pages 051201 - 1, ISSN: 0004931279 * |
TAN, BO ET AL.: "Effective suppression of surface leakage currents in T2SL photodetectors with deep and vertical mesa", INFRARED PHYSICS AND TECHNOLOGY, vol. 116, JPN6022041266, 20 April 2021 (2021-04-20), pages 103724 - 1, ISSN: 0005038151 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7503080B2 (ja) | 2019-06-19 | 2024-06-19 | コンプテック ソリューションズ オーユー | 光電子デバイス |
JP2021163808A (ja) * | 2020-03-31 | 2021-10-11 | 住友電気工業株式会社 | 光検出装置 |
JP7443890B2 (ja) | 2020-03-31 | 2024-03-06 | 住友電気工業株式会社 | 光検出装置 |
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