JP2020120011A - 基板処理装置及び基板処理方法 - Google Patents
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Plasma & Fusion (AREA)
- Cleaning Or Drying Semiconductors (AREA)
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
11 基板
12 ハウジング
14 回転機構部
16 吐出部
17 固定プレート
18 供給部
24 基板保持部
21 回転テーブル
Claims (9)
- 基板を水平に保持し、保持した前記基板を鉛直軸まわりに回転する回転機構部と、
前記回転機構部に保持される前記基板の処理面に一面が間隔をあけて対面する位置に固定され、前記処理面との間に流路を形成する固定プレートと、
前記基板の中央部に対向する位置に設けられ、前記回転機構部によって前記基板が回転されている間に、前記流路に対して、オゾンガスとオゾン水とを供給し、オゾンガスとオゾン水とを混合した気液二相流体を流す吐出部と
を備えることを特徴とする基板処理装置。 - 前記吐出部は、前記気液二相流体をスラグ流として流すことを特徴とする請求項1に記載の基板処理装置。
- 前記固定プレートは、前記一面が平坦であることを特徴とする請求項1または2に記載の基板処理装置。
- 前記流路に前記気液二相流体を流しているときに、前記基板を加熱するヒータを備えることを特徴とする請求項1ないし3のいずれか1項に記載の基板処理装置。
- 前記回転機構部は、前記処理面を下向きにして前記基板を保持することを特徴とする請求項1ないし4のいずれか1項に記載の基板処理装置。
- 水平に保持した基板の処理面を固定された固定プレートの一面と間隔をあけて対面させて前記処理面と前記一面との間に流路を形成した状態で、前記基板を鉛直軸まわりに回転する回転工程と、
前記回転工程中に、前記基板の中央部に対向する位置から前記流路に対して、オゾンガスとオゾン水とを供給し、オゾンガスとオゾン水とを混合した気液二相流体を流す気液二相流体供給工程と
を有することを特徴とする基板処理方法。 - 前記気液二相流体供給工程は、前記気液二相流体をスラグ流として流すことを特徴とする請求項6に記載の基板処理方法。
- 前記気液二相流体供給工程中に、前記基板を加熱する加熱工程を有することを特徴とする請求項6または7に記載の基板処理方法。
- 前記回転工程は、前記処理面を下向きにして保持した前記基板を回転することを特徴とする請求項6ないし8のいずれか1項に記載の基板処理方法。
Priority Applications (5)
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JP2019010345A JP7202632B2 (ja) | 2019-01-24 | 2019-01-24 | 基板処理装置及び基板処理方法 |
KR1020217026359A KR20210118872A (ko) | 2019-01-24 | 2020-01-14 | 기판 처리 장치 및 기판 처리 방법 |
PCT/JP2020/000844 WO2020153168A1 (ja) | 2019-01-24 | 2020-01-14 | 基板処理装置及び基板処理方法 |
CN202080010588.2A CN113330537A (zh) | 2019-01-24 | 2020-01-14 | 基板处理装置以及基板处理方法 |
TW109101959A TWI833880B (zh) | 2019-01-24 | 2020-01-20 | 基板處理裝置及基板處理方法 |
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JP2019010345A JP7202632B2 (ja) | 2019-01-24 | 2019-01-24 | 基板処理装置及び基板処理方法 |
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JP2020120011A true JP2020120011A (ja) | 2020-08-06 |
JP7202632B2 JP7202632B2 (ja) | 2023-01-12 |
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JP (1) | JP7202632B2 (ja) |
KR (1) | KR20210118872A (ja) |
CN (1) | CN113330537A (ja) |
TW (1) | TWI833880B (ja) |
WO (1) | WO2020153168A1 (ja) |
Citations (7)
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JP2003086559A (ja) * | 2001-06-25 | 2003-03-20 | Mitsubishi Electric Corp | 基板洗浄装置および基板洗浄方法 |
JP2005079220A (ja) * | 2003-08-29 | 2005-03-24 | Tokyo Electron Ltd | 基板処理装置 |
WO2007058617A1 (en) * | 2005-11-17 | 2007-05-24 | Chee Keng Chang | A controller for non-volatile memories, and methods of operating the memory controller |
WO2007123198A1 (ja) * | 2006-04-20 | 2007-11-01 | Zenkyo Corporation | 基板処理装置及び基板製造方法 |
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JP2009218548A (ja) | 2008-02-12 | 2009-09-24 | Tsukuba Semi Technology:Kk | 高ドーズインプラ工程のレジスト除去方法及びレジスト除去装置 |
CN102459092A (zh) | 2009-06-03 | 2012-05-16 | 仓敷纺织株式会社 | 含羟基自由基水供给方法和含羟基自由基水供给装置 |
JP6443992B2 (ja) * | 2013-08-28 | 2018-12-26 | 国立大学法人 筑波大学 | 洗浄装置および洗浄方法 |
JP6817821B2 (ja) * | 2016-05-25 | 2021-01-20 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
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- 2020-01-14 WO PCT/JP2020/000844 patent/WO2020153168A1/ja active Application Filing
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2003086559A (ja) * | 2001-06-25 | 2003-03-20 | Mitsubishi Electric Corp | 基板洗浄装置および基板洗浄方法 |
JP2005079220A (ja) * | 2003-08-29 | 2005-03-24 | Tokyo Electron Ltd | 基板処理装置 |
WO2007058617A1 (en) * | 2005-11-17 | 2007-05-24 | Chee Keng Chang | A controller for non-volatile memories, and methods of operating the memory controller |
JP2008192630A (ja) * | 2006-03-20 | 2008-08-21 | Eiji Matsumura | 電子・機械部品洗浄方法及び電子・機械部品洗浄装置 |
WO2007123198A1 (ja) * | 2006-04-20 | 2007-11-01 | Zenkyo Corporation | 基板処理装置及び基板製造方法 |
JP2017123402A (ja) * | 2016-01-07 | 2017-07-13 | 株式会社荏原製作所 | 洗浄装置 |
WO2017163672A1 (ja) * | 2016-03-25 | 2017-09-28 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
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TWI833880B (zh) | 2024-03-01 |
KR20210118872A (ko) | 2021-10-01 |
TW202042296A (zh) | 2020-11-16 |
JP7202632B2 (ja) | 2023-01-12 |
CN113330537A (zh) | 2021-08-31 |
WO2020153168A1 (ja) | 2020-07-30 |
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