JP2020077820A - 放熱部材及び電気接続箱 - Google Patents
放熱部材及び電気接続箱 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims abstract description 25
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- 239000011347 resin Substances 0.000 description 7
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- 230000000694 effects Effects 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000004512 die casting Methods 0.000 description 2
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
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- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/467—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
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- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Connection Or Junction Boxes (AREA)
Abstract
Description
できる。
最初に本開示の実施態様を列挙して説明する。また、以下に記載する実施形態の少なくとも一部を任意に組み合わせてもよい。
即ち、前記半導体素子に近い前記窪み部の肉厚が厚いので熱容量が大きく、前記半導体素子に熱が発生した場合、多量の熱を前記半導体素子から取得でき、放熱効果を高めることができる。
本発明をその実施形態を示す図面に基づいて具体的に説明する。本開示の実施形態に係る放熱部材及び電気接続箱を、以下に図面を参照しつつ説明する。なお、本発明はこれらの例示に限定されるものではなく、特許請求の範囲によって示され、特許請求の範囲と均等の意味及び範囲内でのすべての変更が含まれることが意図される。
図1は、本実施形態に係る電気装置1の斜視図である。電気装置1は、基板収容部10と、基板収容部10を支持する支持部材20(放熱部材)とを備える。
基板収容部10は電力回路30を備える。電力回路30は、バスバー111〜113を含む基板部31と、基板部31の下側の実装面311に実装された半導体スイッチング素子13(半導体素子)とを少なくとも備える。
基板収容部10が支持部材20に固定された状態において、全てのFET13は窪み部24の内側に収容される。換言すれば、窪み部24は全てのFET13を覆う(図7参照)。
上述したように、対向板部223には、全てのFET13を覆う窪み部24が形成されており、窪み部24の底部243の突出端面242には放熱フィン221,221aが設けられている。また、対向板部223において、窪み部24以外の他部分は、第1熱伝導材14を介して基板部31の実装面311と接触している。
また、本実施形態に係る電気装置1はこれに限るものではなく、長壁部241Aに加え、窪み部24の底部243の肉厚Hも対向板部223の他部分の肉厚hより厚くなるように構成しても良い。
例えば、図7においては、2つの放熱フィン221aのうち、図面視右側の放熱フィン221aの図示右面222は、2つの長壁部241Aのうち、図面視右側の長壁部241Aの外側面244と面一をなしている。
即ち、本実施形態に係る電気装置1においては、対向板部223と交差する方向に長壁部241A及び放熱フィン221aが直線上に連設されており、長壁部241Aの外側面244と放熱フィン221aの一面222が面一をなし、一体化されている。従って、長壁部241Aの上側端部に伝導された熱は、最短距離にて放熱フィン221aの先端まで伝導される。
この場合、基板部31から長壁部241Aへの熱伝達が容易になると共に、電気装置1の軽量化を図ることができる。
図8は、本実施形態に係る電気装置1において、窪み部24とFET13との関係を示す部分的縦断面図である。
10 基板収容部
13 FET
14 第1熱伝導材
20 支持部材
21 基部
22 放熱部
24 窪み部
30 電力回路
31 基板部
40 第2熱伝導材
111〜113 バスバー
131 ドレイン端子
132 ソース端子
133 ゲート端子
221,221a 放熱フィン
222 一面
223 対向板部
241 壁部
241A 長壁部
242 突出端面
243 底部
244 外側面
311 実装面
Claims (5)
- 半導体素子が実装された実装面を有する基板部から、前記実装面と対向する対向板部を介して熱を取得して放熱する放熱部材において、
前記対向板部にて、前記半導体素子に対応する位置に形成された窪み部を備え、
前記窪み部は前記対向板部の他部分より肉厚が厚い放熱部材。 - 前記窪み部は、底部を除く壁部が前記対向板部の他部分より肉厚が厚い請求項1に記載の放熱部材。
- 前記窪み部は、底部を除く壁部のうち、前記窪み部の長寸方向に沿って延びる長壁部が前記対向板部の他部分より肉厚が厚い請求項1に記載の放熱部材。
- 前記長壁部の外側面と面一をなし、前記長壁部の端部から連設された放熱フィンを備える請求項3に記載の放熱部材。
- 請求項1から4の何れか一つに記載の放熱部材と、
前記基板部を収容する収容部と、
前記基板部と前記放熱部材の前記対向板部との間に介在する熱伝導材とを備える電気接続箱。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018211604A JP7127498B2 (ja) | 2018-11-09 | 2018-11-09 | 放熱部材及び電気接続箱 |
CN201910998852.7A CN111180401B (zh) | 2018-11-09 | 2019-10-21 | 散热部件及电连接箱 |
US16/665,407 US11227811B2 (en) | 2018-11-09 | 2019-10-28 | Heat radiating member and electrical junction box |
DE102019129948.9A DE102019129948A1 (de) | 2018-11-09 | 2019-11-06 | Wärme abstrahlendes Bauelement und elektrischer Verteilerkasten |
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JP2018211604A JP7127498B2 (ja) | 2018-11-09 | 2018-11-09 | 放熱部材及び電気接続箱 |
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JP2020077820A true JP2020077820A (ja) | 2020-05-21 |
JP7127498B2 JP7127498B2 (ja) | 2022-08-30 |
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US (1) | US11227811B2 (ja) |
JP (1) | JP7127498B2 (ja) |
CN (1) | CN111180401B (ja) |
DE (1) | DE102019129948A1 (ja) |
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2018
- 2018-11-09 JP JP2018211604A patent/JP7127498B2/ja active Active
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2019
- 2019-10-21 CN CN201910998852.7A patent/CN111180401B/zh active Active
- 2019-10-28 US US16/665,407 patent/US11227811B2/en active Active
- 2019-11-06 DE DE102019129948.9A patent/DE102019129948A1/de not_active Withdrawn
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JP2015126095A (ja) * | 2013-12-26 | 2015-07-06 | 株式会社デンソー | 電子制御装置 |
JP2016063064A (ja) * | 2014-09-18 | 2016-04-25 | シャープ株式会社 | 放熱構造体、放熱構造体付き回路基板、および、テレビ装置 |
JP2016146427A (ja) * | 2015-02-09 | 2016-08-12 | 株式会社ジェイデバイス | 半導体装置 |
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DE102019129948A1 (de) | 2020-05-14 |
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US11227811B2 (en) | 2022-01-18 |
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