JP2020066045A - レーザー加工方法 - Google Patents
レーザー加工方法 Download PDFInfo
- Publication number
- JP2020066045A JP2020066045A JP2018201722A JP2018201722A JP2020066045A JP 2020066045 A JP2020066045 A JP 2020066045A JP 2018201722 A JP2018201722 A JP 2018201722A JP 2018201722 A JP2018201722 A JP 2018201722A JP 2020066045 A JP2020066045 A JP 2020066045A
- Authority
- JP
- Japan
- Prior art keywords
- laser beam
- electrode pad
- substrate
- laser
- irradiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003672 processing method Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 230000001678 irradiating effect Effects 0.000 claims abstract description 20
- 238000001514 detection method Methods 0.000 claims abstract description 16
- 239000011148 porous material Substances 0.000 claims description 36
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000002474 experimental method Methods 0.000 description 17
- 230000003287 optical effect Effects 0.000 description 13
- 239000010949 copper Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 9
- 230000001681 protective effect Effects 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007730 finishing process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
- B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
- B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
- B23K26/386—Removing material by boring or cutting by boring of blind holes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/42—Printed circuits
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/54—Glass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/0502—Disposition
- H01L2224/05025—Disposition the internal layer being disposed on a via connection of the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05144—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/40—Details of apparatuses used for either manufacturing connectors or connecting the semiconductor or solid-state body
- H01L2924/401—LASER
- H01L2924/40101—Mode
- H01L2924/40102—Mode being pulsed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/40—Details of apparatuses used for either manufacturing connectors or connecting the semiconductor or solid-state body
- H01L2924/401—LASER
- H01L2924/405—Wavelength
- H01L2924/40501—UV spectrum
Abstract
Description
上記したように、アライメントを終えた状態で、レーザー光線照射工程を実施する。チャックテーブル28に保持された基板10の各デバイス12、電極パッド12aの座標位置は、制御手段100に記憶され管理されており、上記したアライメントが実施されることで、基板10上の電極パッド12aを任意の位置に正確に位置付けることが可能になっている。
レーザー光線の波長 :343nm
繰り返し周波数 :50kHz
平均出力 :1.5W
パルスエネルギー :30μJ
パルス幅 :10ps
スポット径 :50μm
上記したレーザー光線照射工程が実施されると共に、基板10を構成するリチウムタンタレートから発せられる第一のプラズマ光と、電極パッド12aから発せられる第二のプラズマ光とを検出する検出工程を実施する。該検出工程について、以下に説明する。
上記した検出工程によれば、第一のプラズマ光と、第二のプラズマ光の発生状態を検出することができる。この検出工程において第二のプラズマ光を検出することにより、レーザー光線LBの照射を停止するレーザー照射終了工程を実施する。該レーザー照射終了工程について、より具体的に説明する。
パルスレーザー光線の波長 :343nm
繰り返し周波数 :50kHz(基準繰り返し周波数)
平均出力 :3W
パルスエネルギー :60μJ
パルス幅 :10ps
スポット径 :50μm
ピークパワー密度 :300GW/cm2
上記したレーザー加工条件(基礎条件:平均出力3W、パルスエネルギー60μJ、ピークパワー密度300GW/cm2)に沿ってレーザー加工を実施し、第二のプラズマ光を検出することによりレーザー光線LBの照射を停止した。その結果、電極パッド12aには穴が開いた(加工結果:×)。
上記したレーザー加工条件に対し、平均出力2.5W、パルスエネルギー50μJ、ピークパワー密度250GW/cm2に調整して、レーザー加工を実施し、第二のプラズマ光を検出することによりレーザー光線LBの照射を停止した。その結果、電極パッド12aには穴が開いた(加工結果:×)。
上記したレーザー加工条件に対し、平均出力2W、パルスエネルギー40μJ、ピークパワー密度200GW/cm2に調整して、レーザー加工を実施し、第二のプラズマ光を検出することによりレーザー光線LBの照射を停止した。その結果、電極パッド12aに穴は開かなかったが、大きな凹みが見られた(加工結果:×)。
上記したレーザー加工条件に対し、平均出力1.75W、パルスエネルギー35μJ、ピークパワー密度175GW/cm2に調整して、レーザー加工を実施し、第二のプラズマ光を検出することによりレーザー光線LBの照射を停止した。その結果、電極パッド12aに僅かな凹みは見られたが、電極パッド12aに穴は開かなかった(加工結果:○)。
上記したレーザー加工条件に対し、平均出力1.5W、パルスエネルギー30μJ、ピークパワー密度150GW/cm2に調整して、レーザー加工を実施し、第二のプラズマ光を検出することによりレーザー光線LBの照射を停止した。その結果、電極パッド12aに凹みは見られず、穴も開かなかった(加工結果:◎)。
上記したレーザー加工条件に対し、平均出力1.25W、パルスエネルギー25μJ、ピークパワー密度125GW/cm2に調整して、レーザー加工を実施し、第二のプラズマ光を検出することによりレーザー光線LBの照射を停止した。その結果、電極パッド12aに凹みは見られず、穴も開かなかった(加工結果:◎)。
上記したレーザー加工条件に対し、平均出力1W、パルスエネルギー20μJ、ピークパワー密度100GW/cm2に調整して、レーザー加工を実施し、第二のプラズマ光を検出することによりレーザー光線LBの照射を停止した。その結果、電極パッド12aに凹みは見られず、穴も開かなかったが、レーザー光線照射を停止するまでに実験5に対して、2倍以上の時間が掛かった(加工結果:○)。
上記したレーザー加工条件に対し、平均出力0.75W、パルスエネルギー15μJ、ピークパワー密度75GW/cm2に調整して、レーザー加工を実施したが、実用的な時間内に電極パッド12aに細孔16が到達せず、第二のプラズマ光を検出できなかった(加工結果:×)。
上記した実験結果(図6を参照)から、本発明者らは、レーザー光線照射工程において照射されるレーザー光線のピークパワー密度を、175GW/cm2以下100GW/cm2以上に設定することによって、先に照射されたレーザー光線によって生じるプラズマ光に妨げられることなくレーザー光線LBが基板10に対して照射され、最新のプラズマ光を確実に検出することができ、その結果、細孔16を適正に形成できることを見出した。さらに、レーザー光線照射工程において照射されるレーザー光線のピークパワー密度を、150GW/cm2以下125GW/cm2以上に設定することによって、電極パッド12aに凹みを生じさせることなく、電極パッド12aに細孔16が至ったことをプラズマ光の検出により適切に判定し、さらに良質な細孔16を形成できることも見出した。
10:基板
12:デバイス
12a:電極パッド
14:分割予定ライン
16:細孔
20:保持手段
21:X軸方向可動板
22:Y軸方向可動板
24:支柱
26:カバー板
28:チャックテーブル
30:移動手段
40:吸着チャック
42:クランプ
50:レーザー光線照射手段
52:集光器
54:第一の音響光学偏向手段
55:第二の音響光学偏向手段
60:撮像手段
70:プラズマ検出手段
71:プラズマ光受光手段
72:ビームスプリッター
72a:第一の光路
72b:第二の光路
73:第一のバンドパスフィルター
74:第一のホトデテクター
76:第二のバンドパスフィルター
77:第二のホトデテクター
100:制御手段
Claims (2)
- 電極パッドを備えたデバイスが表面に形成された基板の裏面にレーザー光線を照射して電極パッドに至る細孔を形成するレーザー加工方法であって、
電極パッドに対応する裏面からパルス状のレーザー光線を照射するレーザー光線照射工程と、
レーザー光線の照射によって基板に細孔が形成されると共に基板から発せられる第一のプラズマ光と電極パッドから発せられる第二のプラズマ光とを検出する検出工程と、
該検出工程において、該第二のプラズマ光を検出した際、レーザー光線の照射を停止するレーザー照射終了工程と、
を少なくとも含み、
該レーザー光線照射工程において、照射されるレーザー光線のピークパワー密度を、175GW/cm2以下100GW/cm2以上に設定するレーザー加工方法。 - 該レーザー光線照射工程において、照射されるレーザー光線のピークパワー密度を、150GW/cm2以下125GW/cm2以上に設定する請求項1に記載のレーザー加工方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018201722A JP2020066045A (ja) | 2018-10-26 | 2018-10-26 | レーザー加工方法 |
US16/601,077 US11114341B2 (en) | 2018-10-26 | 2019-10-14 | Laser processing method |
DE102019216375.0A DE102019216375A1 (de) | 2018-10-26 | 2019-10-24 | Laserbearbeitungsverfahren |
ATA50924/2019A AT521827A2 (de) | 2018-10-26 | 2019-10-25 | Laserverarbeitungsverfahren |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018201722A JP2020066045A (ja) | 2018-10-26 | 2018-10-26 | レーザー加工方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2020066045A true JP2020066045A (ja) | 2020-04-30 |
Family
ID=70328378
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018201722A Pending JP2020066045A (ja) | 2018-10-26 | 2018-10-26 | レーザー加工方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11114341B2 (ja) |
JP (1) | JP2020066045A (ja) |
AT (1) | AT521827A2 (ja) |
DE (1) | DE102019216375A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113305442A (zh) * | 2021-05-12 | 2021-08-27 | 杭州大和热磁电子有限公司 | 一种石英环自动刻字装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10323777A (ja) * | 1997-05-26 | 1998-12-08 | Sumitomo Heavy Ind Ltd | レーザによるプリント配線基板用穴あけ加工装置 |
JP2000202668A (ja) * | 1999-01-20 | 2000-07-25 | Nec Corp | Qスイッチレ―ザによる穴あけ加工方法 |
JP2002321079A (ja) * | 2001-02-21 | 2002-11-05 | Sumitomo Heavy Ind Ltd | レーザ加工方法 |
JP2008212999A (ja) * | 2007-03-06 | 2008-09-18 | Disco Abrasive Syst Ltd | レーザー加工装置 |
JP2009125756A (ja) * | 2007-11-21 | 2009-06-11 | Disco Abrasive Syst Ltd | レーザー加工装置 |
US20130288425A1 (en) * | 2011-08-05 | 2013-10-31 | Solexel, Inc. | End point detection for back contact solar cell laser via drilling |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6034030B2 (ja) | 1976-05-20 | 1985-08-06 | 工業技術院長 | 太陽熱コレクタ−ユニツト |
JP5693705B2 (ja) * | 2010-03-30 | 2015-04-01 | イムラ アメリカ インコーポレイテッド | レーザベースの材料加工装置及び方法 |
JP6034030B2 (ja) | 2012-03-09 | 2016-11-30 | 株式会社ディスコ | レーザー加工方法およびレーザー加工装置 |
-
2018
- 2018-10-26 JP JP2018201722A patent/JP2020066045A/ja active Pending
-
2019
- 2019-10-14 US US16/601,077 patent/US11114341B2/en active Active
- 2019-10-24 DE DE102019216375.0A patent/DE102019216375A1/de active Pending
- 2019-10-25 AT ATA50924/2019A patent/AT521827A2/de unknown
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10323777A (ja) * | 1997-05-26 | 1998-12-08 | Sumitomo Heavy Ind Ltd | レーザによるプリント配線基板用穴あけ加工装置 |
JP2000202668A (ja) * | 1999-01-20 | 2000-07-25 | Nec Corp | Qスイッチレ―ザによる穴あけ加工方法 |
JP2002321079A (ja) * | 2001-02-21 | 2002-11-05 | Sumitomo Heavy Ind Ltd | レーザ加工方法 |
JP2008212999A (ja) * | 2007-03-06 | 2008-09-18 | Disco Abrasive Syst Ltd | レーザー加工装置 |
JP2009125756A (ja) * | 2007-11-21 | 2009-06-11 | Disco Abrasive Syst Ltd | レーザー加工装置 |
US20130288425A1 (en) * | 2011-08-05 | 2013-10-31 | Solexel, Inc. | End point detection for back contact solar cell laser via drilling |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113305442A (zh) * | 2021-05-12 | 2021-08-27 | 杭州大和热磁电子有限公司 | 一种石英环自动刻字装置 |
Also Published As
Publication number | Publication date |
---|---|
AT521827A2 (de) | 2020-05-15 |
DE102019216375A1 (de) | 2020-04-30 |
US11114341B2 (en) | 2021-09-07 |
US20200135563A1 (en) | 2020-04-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10207369B2 (en) | Method for forming a laser processed hole | |
JP5912293B2 (ja) | レーザー加工装置 | |
US8779325B2 (en) | Laser beam processing machine | |
JP5964604B2 (ja) | レーザー加工装置 | |
JP5902540B2 (ja) | レーザー加工方法およびレーザー加工装置 | |
JP4787091B2 (ja) | ビアホールの加工方法 | |
JP4917361B2 (ja) | ビアホールの加工方法 | |
US8513566B2 (en) | Laser beam processing machine | |
JP5016876B2 (ja) | ビアホールの加工方法 | |
KR102028206B1 (ko) | 레이저 가공 방법 및 레이저 가공 장치 | |
US7732729B2 (en) | Laser processing device | |
JP7043124B2 (ja) | ウェーハの加工方法 | |
JP2020066045A (ja) | レーザー加工方法 | |
JP6068074B2 (ja) | ゲッタリング層形成方法 | |
JP7239298B2 (ja) | レーザー加工方法 | |
JP6576212B2 (ja) | ウエーハの加工方法 | |
JP2020066015A (ja) | レーザー加工方法 | |
JP2005342760A (ja) | レーザー加工装置 | |
US20230415262A1 (en) | Laser processing apparatus | |
JP6068062B2 (ja) | レーザー加工装置 | |
JP2013198905A (ja) | レーザー加工装置 | |
JP2020040113A (ja) | レーザー加工装置 | |
JP2013193105A (ja) | レーザー加工装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181031 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210811 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20220518 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220524 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220721 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20221101 |