JP2020030914A - 電子デバイスの製造方法 - Google Patents
電子デバイスの製造方法 Download PDFInfo
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- 239000011698 potassium fluoride Substances 0.000 description 1
- 235000003270 potassium fluoride Nutrition 0.000 description 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 1
- 229910001950 potassium oxide Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- JEXVQSWXXUJEMA-UHFFFAOYSA-N pyrazol-3-one Chemical class O=C1C=CN=N1 JEXVQSWXXUJEMA-UHFFFAOYSA-N 0.000 description 1
- 150000003233 pyrroles Chemical class 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- 229910001952 rubidium oxide Inorganic materials 0.000 description 1
- CWBWCLMMHLCMAM-UHFFFAOYSA-M rubidium(1+);hydroxide Chemical compound [OH-].[Rb+].[Rb+] CWBWCLMMHLCMAM-UHFFFAOYSA-M 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical class C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical class C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- FVRNDBHWWSPNOM-UHFFFAOYSA-L strontium fluoride Chemical compound [F-].[F-].[Sr+2] FVRNDBHWWSPNOM-UHFFFAOYSA-L 0.000 description 1
- 229910001637 strontium fluoride Inorganic materials 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 150000003518 tetracenes Chemical class 0.000 description 1
- VLLMWSRANPNYQX-UHFFFAOYSA-N thiadiazole Chemical compound C1=CSN=N1.C1=CSN=N1 VLLMWSRANPNYQX-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 150000001651 triphenylamine derivatives Chemical class 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Abstract
Description
基板12は、有機ELデバイス10が出射する光(波長400nm〜800nmの可視光を含む)に対して透光性を有する。基板12の厚さの例は、30μm〜1100μmである。
陽極層14は基板12上に設けられている。陽極層14には、光透過性を示す電極が用いられる。光透過性を示す電極の例は、電気伝導度の高い金属酸化物、金属硫化物及び金属等を含む薄膜である。光透過性を示す電極は、光透過率の高い薄膜が好ましい。陽極層14は、導電体(例えば金属)からなるネットワーク構造を有してもよい。陽極層14の厚さは、光の透過性、電気伝導度等を考慮して決定され得る。陽極層14の厚さは、通常、10nm〜10μmであり、好ましくは20nm〜1μmであり、さらに好ましくは50nm〜500nmである。
デバイス機能部16は、陽極層14及び陰極層18に印加された電圧に応じて、電荷の移動及び電荷の再結合などの有機ELデバイス10の発光に寄与する機能部である。デバイス機能部16は機能層である発光層を有する。デバイス機能部16は発光層以外の機能層を有してもよい。すなわち、デバイス機能部16は、一つ又は複数の機能層を有する。
色素系材料としては、例えば、シクロペンダミン誘導体、テトラフェニルブタジエン誘導体化合物、トリフェニルアミン誘導体、オキサジアゾール誘導体、ピラゾロキノリン誘導体、ジスチリルベンゼン誘導体、ジスチリルアリーレン誘導体、ピロール誘導体、チオフェン環化合物、ピリジン環化合物、ペリノン誘導体、ペリレン誘導体、オリゴチオフェン誘導体、オキサジアゾールダイマー、ピラゾリンダイマー、キナクリドン誘導体、クマリン誘導体などが挙げられる。
金属錯体系材料としては、例えばTb、Eu、Dyなどの希土類金属、又はAl、Zn、Be、Ir、Ptなどを中心金属に有し、オキサジアゾール、チアジアゾール、フェニルピリジン、フェニルベンゾイミダゾール、キノリン構造などを配位子に有する金属錯体が挙げられ、例えばイリジウム錯体、白金錯体などの三重項励起状態からの発光を有する金属錯体、アルミニウムキノリノール錯体、ベンゾキノリノールベリリウム錯体、ベンゾオキサゾリル亜鉛錯体、ベンゾチアゾール亜鉛錯体、アゾメチル亜鉛錯体、ポルフィリン亜鉛錯体、フェナントロリンユーロピウム錯体などが挙げられる。
高分子系材料としては、ポリパラフェニレンビニレン誘導体、ポリチオフェン誘導体、ポリパラフェニレン誘導体、ポリシラン誘導体、ポリアセチレン誘導体、ポリフルオレン誘導体、ポリビニルカルバゾール誘導体、上記色素系材料や金属錯体系発光材料を高分子化したものなどが挙げられる。
ドーパント材料としては、例えばペリレン誘導体、クマリン誘導体、ルブレン誘導体、キナクリドン誘導体、スクアリウム誘導体、ポルフィリン誘導体、スチリル系色素、テトラセン誘導体、ピラゾロン誘導体、デカシクレン、フェノキサゾンなどが挙げられる。
(a)(陽極層)/正孔注入層/発光層/(陰極層)
(b)(陽極層)/正孔注入層/発光層/電子注入層/(陰極層)
(c)(陽極層)/正孔注入層(又は正孔輸送層)/発光層/電子輸送層/電子注入層/(陰極層)
(d)(陽極層)/正孔注入層/正孔輸送層/発光層/(陰極層)
(e)(陽極層)/正孔注入層/正孔輸送層/発光層/電子注入層/(陰極層)
(f)(陽極層)/正孔注入層/正孔輸送層/発光層/電子輸送層/電子注入層/(陰極層)
(g)(陽極層)/発光層/電子輸送層(又は電子注入層)/(陰極層)
(i)(陽極層)/発光層/電子輸送層/電子注入層/(陰極層)
記号「/」は、記号「/」の両側の層同士が接合していることを意味している。
(j)(陽極層)/[構造単位I]/電荷発生層/[構造単位I]/(陰極層)
(k)(陽極層)/[構造単位II]x/[構造単位I]/(陰極層)
記号「x」は、2以上の整数を表し、「[構造単位II]x」は、[構造単位II]がx段積層された積層体を表す。複数の構造単位IIの層構成は同じでも、異なっていてもよい。
陰極層18は、デバイス機能部16上に設けられている。陰極層18の厚さは、用いる材料によって最適値が異なり、電気伝導度、耐久性等を考慮して設定される。陰極層18の厚さは、通常、10nm〜10μmであり、好ましくは20nm〜1μmであり、さらに好ましくは50nm〜500nmである。
条件1:インクの表面張力が15mN/m〜25mN/mである。
条件2:インクの比重が1.5以上である。
インクの比重は、通常、2.5以下であり得る。
検証実験では、図2に示した循環型のインクジェット印刷装置24を使用した。検証実験で使用したインクジェット印刷装置24は、図2に示したように、流路38においてポンプ40とインクジェットヘッド28との間に圧力調整機構42を配置した。圧力調整機構42には、ダイヤフラムを用いてインクの圧力の脈動を抑制するパルスダンパーを使用した。インクの流れ方向におけるインクジェットヘッド28の前後に圧力検出器44a及び圧力検出器44bを配設し、インクジェットヘッド28へ流入するインクの圧力及びインクジェットヘッド28から流出するインクの圧力を検出した。
次に、上記検証実験に対する比較実験を説明する。比較実験は、圧力調整機構42として、検証実験で使用したダイヤフラムを備えた圧力調整機構42(パルスダンパー)の代わりに、インクの圧力の脈動抑制のために空気溜まりを利用したバッファタンクを使用した。この点以外は、検証実験と同じ条件で比較実験を行った。そのため、吐出口圧力の計算方法、液ダレの有無の確認方法及びインクの吐出状態の確認方法も検証実験と同じである。
Claims (7)
- 基板に第1電極層を形成する第1電極層形成工程と、
前記第1電極層上に、一つ又は複数の機能層を含むデバイス機能部を形成するデバイス機能部形成工程と、
前記デバイス機能部上に第2電極層を形成する第2電極層形成工程と、
を備え、
前記第1電極層、前記一つ又は複数の機能層及び前記第2電極層のうち少なくとも一つの層は、前記少なくとも一つの層の材料を含むインクを、インクジェット印刷装置から前記基板を含む下地基板上に塗布することによって形成され、
前記インクジェット印刷装置は、
インク供給部と、
前記インクを前記下地基板に向けて吐出するインク吐出口を有するインクジェットヘッドと、
前記インク供給部と前記インクジェットヘッドとを接続している前記インクの流路と、
前記流路上において前記インク供給部と前記インクジェットヘッドとの間に配置されておりインクを前記流路に流すための駆動部と、
前記流路上において前記駆動部と前記インクジェットヘッドとの間に配置されているダイヤフラム型の圧力調整機構と、
を有し、
前記インクは、表面張力が15mN/m〜25mN/mであること、及び、比重が1.5以上であることのうち少なくとも一方を満たす、
電子デバイスの製造方法。 - 前記インクを、前記インク供給部と前記インクジェットヘッドとの間で循環させる、
請求項1に記載の電子デバイスの製造方法。 - 前記インクを1週間以上連続して前記インク供給部と前記インクジェットヘッドとの間で循環させる、
請求項2に記載の電子デバイスの製造方法。 - 前記インクジェットヘッドから前記インクを定期的にパージさせる、
請求項1〜3の何れか一項に記載の電子デバイスの製造方法。 - 前記インクは、沸点が200℃以上の溶媒と、前記溶媒に対する溶解度が1%以下の物質とを含む、
請求項1〜4の何れか一項に記載の電子デバイスの製造方法。 - 前記少なくとも一つの層は、前記デバイス機能部が有する層である、
請求項1〜5の何れか一項に記載の電子デバイスの製造方法。 - 前記デバイス機能部は、有機発光層を含む、
請求項1〜6の何れか一項に記載の電子デバイスの製造方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
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JP2018154661A JP2020030914A (ja) | 2018-08-21 | 2018-08-21 | 電子デバイスの製造方法 |
EP19851659.3A EP3843504A4 (en) | 2018-08-21 | 2019-08-09 | METHOD OF MAKING AN ELECTRONIC DEVICE |
PCT/JP2019/031768 WO2020039991A1 (ja) | 2018-08-21 | 2019-08-09 | 電子デバイスの製造方法 |
CN201980054383.1A CN112586087A (zh) | 2018-08-21 | 2019-08-09 | 电子器件的制造方法 |
US17/256,932 US20210283913A1 (en) | 2018-08-21 | 2019-08-09 | Method for manufacturing electronic device |
KR1020217007778A KR20210046709A (ko) | 2018-08-21 | 2019-08-09 | 전자 디바이스의 제조 방법 |
TW108129514A TW202010369A (zh) | 2018-08-21 | 2019-08-19 | 電子裝置的製造方法 |
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JP2013141765A (ja) * | 2012-01-10 | 2013-07-22 | Panasonic Corp | インクジェット式記録装置 |
JP2013215941A (ja) * | 2012-04-06 | 2013-10-24 | Seiko Epson Corp | 液体噴射ヘッドおよび液体噴射装置 |
JP2014013840A (ja) * | 2012-07-04 | 2014-01-23 | Mitsubishi Chemicals Corp | 有機電界発光素子用組成物 |
JP2016193983A (ja) * | 2015-03-31 | 2016-11-17 | セイコーエプソン株式会社 | 機能性インク、成膜方法、液滴吐出装置、膜付デバイスおよび電子機器 |
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JPS6372665A (ja) | 1986-09-12 | 1988-04-02 | Fuji Xerox Co Ltd | 電子写真用電荷輸送材料の製造方法 |
JPS63175860A (ja) | 1987-01-16 | 1988-07-20 | Fuji Xerox Co Ltd | 電子写真感光体 |
JP2651237B2 (ja) | 1989-02-10 | 1997-09-10 | 出光興産株式会社 | 薄膜エレクトロルミネッセンス素子 |
JPH02135361A (ja) | 1988-11-16 | 1990-05-24 | Fuji Xerox Co Ltd | 電子写真感光体 |
JPH02135359A (ja) | 1988-11-16 | 1990-05-24 | Fuji Xerox Co Ltd | 電子写真感光体 |
JPH0337992A (ja) | 1989-07-04 | 1991-02-19 | Idemitsu Kosan Co Ltd | 有機エレクトロルミネッセンス素子の製造方法 |
JPH03152184A (ja) | 1989-11-08 | 1991-06-28 | Nec Corp | 有機薄膜el素子 |
ES2340310T3 (es) * | 2006-12-28 | 2010-06-01 | Agfa Graphics N.V. | Desgasificacion de tinta para sistemas de circulacion de la alimentacion de tinta en impresoras de inyeccion de tinta. |
JPWO2012098580A1 (ja) * | 2011-01-19 | 2014-06-09 | パナソニック株式会社 | 有機発光素子の製造方法、有機表示パネル、有機発光装置、機能層の形成方法、インク、基板、有機発光素子、有機表示装置、および、インクジェット装置 |
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- 2019-08-09 WO PCT/JP2019/031768 patent/WO2020039991A1/ja unknown
- 2019-08-09 KR KR1020217007778A patent/KR20210046709A/ko unknown
- 2019-08-09 EP EP19851659.3A patent/EP3843504A4/en not_active Withdrawn
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JP2013141765A (ja) * | 2012-01-10 | 2013-07-22 | Panasonic Corp | インクジェット式記録装置 |
JP2013215941A (ja) * | 2012-04-06 | 2013-10-24 | Seiko Epson Corp | 液体噴射ヘッドおよび液体噴射装置 |
JP2014013840A (ja) * | 2012-07-04 | 2014-01-23 | Mitsubishi Chemicals Corp | 有機電界発光素子用組成物 |
JP2016193983A (ja) * | 2015-03-31 | 2016-11-17 | セイコーエプソン株式会社 | 機能性インク、成膜方法、液滴吐出装置、膜付デバイスおよび電子機器 |
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US20210283913A1 (en) | 2021-09-16 |
CN112586087A (zh) | 2021-03-30 |
TW202010369A (zh) | 2020-03-01 |
EP3843504A4 (en) | 2022-05-18 |
KR20210046709A (ko) | 2021-04-28 |
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