JP2020025031A - 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法 - Google Patents
薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法 Download PDFInfo
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- JP2020025031A JP2020025031A JP2018149154A JP2018149154A JP2020025031A JP 2020025031 A JP2020025031 A JP 2020025031A JP 2018149154 A JP2018149154 A JP 2018149154A JP 2018149154 A JP2018149154 A JP 2018149154A JP 2020025031 A JP2020025031 A JP 2020025031A
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- oxide semiconductor
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- indium
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Abstract
Description
ら側面の代表的なものの概要は以下の通りである。
基板101を用意する。基板101としては、ガラス基板、石英基板、樹脂基板等が用いられる。樹脂基板を用いることで、基板101に可撓性を付与することができる。
トランジスタ110の形成後、トランジスタ110を覆う層間絶縁層116、及び平坦化層318が形成される。層間絶縁層116は、一部が酸化物半導体層113と接するため、アンダーコート層102や、ゲート絶縁層112と同様、窒化シリコン、窒化酸化シリコン、酸化シリコン、又はそれらを含む積層膜として形成することができる。層間絶縁層116の膜厚は、50nm乃至700nm、好ましくは100nm乃至500nm程度で形成されると良い。平坦化層318は、トランジスタ110等による凹凸の緩和を目的の一として設けられる。平坦化層318としては、熱硬化型あるいは光硬化型の有機樹脂を用いることができる。平坦化層318の膜厚は、300nm乃至2μm、好ましくは500nm乃至1μm程度で形成されると良い。
トランジスタ110の形成後、トランジスタ110を覆う層間絶縁層116、及び平坦化層418が形成される。層間絶縁層116は、一部が酸化物半導体層113と接するため、アンダーコート層102や、ゲート絶縁層112と同様、窒化シリコン、窒化酸化シリコン、酸化シリコン、又はそれらを含む積層膜として形成することができる。層間絶縁層116の膜厚は、50nm乃至700nm、好ましくは100nm乃至500nm程度で形成されると良い。平坦化層418は、トランジスタ110等による凹凸の緩和を目的の一として設けられる。平坦化層418としては、熱硬化型あるいは光硬化型の有機樹脂を用いることができる。平坦化層418の膜厚は、300nm乃至2μm、好ましくは500nm乃至1μm程度で形成されると良い。
Claims (6)
- 少なくともインジウム及びガリウムを含む酸化物半導体からなる活性層と、
前記活性層上に形成されたチタン層を有する電極層を有し、
前記活性層と前記電極層の界面から前記活性層に向かって15nmの範囲におけるイオン濃度において、インジウム濃度が酸素濃度の1.3倍以下である、
薄膜トランジスタ。 - 前記活性層と前記電極層の界面から前記活性層に向かって15nmの範囲におけるイオン濃度において、インジウム濃度が酸素濃度以下である、
請求項1に記載の薄膜トランジスタ。 - 少なくともインジウム及びガリウムを含む酸化物半導体からなる活性層と、
前記活性層上に形成されたチタンを含む金属層を有する電極層を有し、
前記活性層と前記電極層の界面から前記活性層に向かって15nmの範囲におけるイオン分布において、インジウム量が酸素量以下である、
薄膜トランジスタ。 - 前記活性層表面における残留塩素量が1.0×1019[atoms/cm3]以下である、請求項1〜3のいずれか1項に記載の薄膜トランジスタ。
- 請求項1〜4のいずれか1項に記載の薄膜トランジスタを備えた表示装置。
- 基板上に、少なくともインジウム及びガリウムを含む酸化物半導体からなる活性層を形成し、
前記活性層上にチタンを含む金属層を有する電極層を形成し、
前記電極層にレジスト層を形成し、
前記金属層をエッチングによりパターニングし、
前記レジスト層を剥離し、
前記レジスト層の剥離後の前記活性層表面の残留塩素量を、1.0×1019[atoms/cm3]以下とする、
薄膜トランジスタの製造方法。
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JP2018149154A JP7398860B2 (ja) | 2018-08-08 | 2018-08-08 | 薄膜トランジスタの製造方法 |
CN201980051695.7A CN112514080B (zh) | 2018-08-08 | 2019-06-10 | 薄膜晶体管、显示装置和薄膜晶体管的制造方法 |
PCT/JP2019/022885 WO2020031491A1 (ja) | 2018-08-08 | 2019-06-10 | 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法 |
US17/162,367 US20210151576A1 (en) | 2018-08-08 | 2021-01-29 | Thin film transistor and manufacturing method for thin film transistor |
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Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008219008A (ja) * | 2007-02-28 | 2008-09-18 | Samsung Electronics Co Ltd | 薄膜トランジスタ及びその製造方法 |
JP2009141001A (ja) * | 2007-12-04 | 2009-06-25 | Canon Inc | 酸化物半導体薄膜トランジスタ |
JP2011129897A (ja) * | 2009-11-20 | 2011-06-30 | Semiconductor Energy Lab Co Ltd | 薄膜トランジスタ |
WO2011132769A1 (ja) * | 2010-04-23 | 2011-10-27 | 株式会社日立製作所 | 半導体装置およびそれを用いたrfidタグならびに表示装置 |
WO2012002574A1 (ja) * | 2010-07-02 | 2012-01-05 | 合同会社先端配線材料研究所 | 薄膜トランジスタ |
WO2012173035A1 (ja) * | 2011-06-13 | 2012-12-20 | シャープ株式会社 | 半導体装置およびその製造方法 |
WO2013042608A1 (ja) * | 2011-09-20 | 2013-03-28 | シャープ株式会社 | 半導体装置およびその製造方法 |
US20130137213A1 (en) * | 2011-11-30 | 2013-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US20180158843A1 (en) * | 2016-12-02 | 2018-06-07 | Innolux Corporation | Display device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101597312B1 (ko) * | 2009-11-16 | 2016-02-25 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
JP5558222B2 (ja) * | 2010-06-18 | 2014-07-23 | シャープ株式会社 | 薄膜トランジスタ基板の製造方法 |
JP6004308B2 (ja) * | 2011-08-12 | 2016-10-05 | Nltテクノロジー株式会社 | 薄膜デバイス |
KR101976212B1 (ko) * | 2011-10-24 | 2019-05-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
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-
2019
- 2019-06-10 CN CN201980051695.7A patent/CN112514080B/zh active Active
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Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008219008A (ja) * | 2007-02-28 | 2008-09-18 | Samsung Electronics Co Ltd | 薄膜トランジスタ及びその製造方法 |
JP2009141001A (ja) * | 2007-12-04 | 2009-06-25 | Canon Inc | 酸化物半導体薄膜トランジスタ |
JP2011129897A (ja) * | 2009-11-20 | 2011-06-30 | Semiconductor Energy Lab Co Ltd | 薄膜トランジスタ |
WO2011132769A1 (ja) * | 2010-04-23 | 2011-10-27 | 株式会社日立製作所 | 半導体装置およびそれを用いたrfidタグならびに表示装置 |
WO2012002574A1 (ja) * | 2010-07-02 | 2012-01-05 | 合同会社先端配線材料研究所 | 薄膜トランジスタ |
WO2012173035A1 (ja) * | 2011-06-13 | 2012-12-20 | シャープ株式会社 | 半導体装置およびその製造方法 |
WO2013042608A1 (ja) * | 2011-09-20 | 2013-03-28 | シャープ株式会社 | 半導体装置およびその製造方法 |
US20130137213A1 (en) * | 2011-11-30 | 2013-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP2013138184A (ja) * | 2011-11-30 | 2013-07-11 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
US20180158843A1 (en) * | 2016-12-02 | 2018-06-07 | Innolux Corporation | Display device |
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US20210151576A1 (en) | 2021-05-20 |
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