JP2020009432A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2020009432A5 JP2020009432A5 JP2019118472A JP2019118472A JP2020009432A5 JP 2020009432 A5 JP2020009432 A5 JP 2020009432A5 JP 2019118472 A JP2019118472 A JP 2019118472A JP 2019118472 A JP2019118472 A JP 2019118472A JP 2020009432 A5 JP2020009432 A5 JP 2020009432A5
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- transistor
- gate
- input terminal
- output terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 10
- 238000013528 artificial neural network Methods 0.000 claims 1
- 238000004364 calculation method Methods 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018124122 | 2018-06-29 | ||
| JP2018124122 | 2018-06-29 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020009432A JP2020009432A (ja) | 2020-01-16 |
| JP2020009432A5 true JP2020009432A5 (enExample) | 2022-06-21 |
| JP7337563B2 JP7337563B2 (ja) | 2023-09-04 |
Family
ID=69007463
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019118472A Active JP7337563B2 (ja) | 2018-06-29 | 2019-06-26 | 半導体装置、及び電子機器 |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US11515873B2 (enExample) |
| JP (1) | JP7337563B2 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11515873B2 (en) * | 2018-06-29 | 2022-11-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| US10924090B2 (en) * | 2018-07-20 | 2021-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising holding units |
| JP7441175B2 (ja) * | 2018-11-08 | 2024-02-29 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
| CN113826103A (zh) * | 2019-05-17 | 2021-12-21 | 株式会社半导体能源研究所 | 半导体装置及电子设备 |
| WO2021038343A1 (ja) * | 2019-08-23 | 2021-03-04 | 株式会社半導体エネルギー研究所 | 撮像装置、距離推定装置及び移動体 |
| US12205019B2 (en) * | 2019-11-19 | 2025-01-21 | Alibaba Group Holding Limited | Data layout conscious processing in memory architecture for executing neural network model |
| US20220261559A1 (en) * | 2020-02-27 | 2022-08-18 | Tdk Corporation | Arithmetic circuit and neuromorphic device |
| US11218137B2 (en) * | 2020-04-14 | 2022-01-04 | Globalfoundries U.S. Inc. | Low clock load dynamic dual output latch circuit |
Family Cites Families (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070022070A1 (en) | 2005-03-15 | 2007-01-25 | Wells Richard B | Forgetful logic for artificial neural networks |
| US7592841B2 (en) | 2006-05-11 | 2009-09-22 | Dsm Solutions, Inc. | Circuit configurations having four terminal JFET devices |
| WO2011070901A1 (en) | 2009-12-11 | 2011-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US8878589B2 (en) | 2011-06-30 | 2014-11-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
| US8710505B2 (en) | 2011-08-05 | 2014-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8988152B2 (en) | 2012-02-29 | 2015-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8866510B2 (en) | 2012-05-02 | 2014-10-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5885719B2 (ja) | 2013-09-09 | 2016-03-15 | 株式会社東芝 | 識別装置および演算装置 |
| US9461126B2 (en) | 2013-09-13 | 2016-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, clocked inverter circuit, sequential circuit, and semiconductor device including sequential circuit |
| US8803591B1 (en) | 2013-11-06 | 2014-08-12 | Freescale Semiconductor, Inc. | MOS transistor with forward bulk-biasing circuit |
| US9397637B2 (en) | 2014-03-06 | 2016-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Voltage controlled oscillator, semiconductor device, and electronic device |
| JP6501146B2 (ja) | 2014-03-18 | 2019-04-17 | パナソニックＩｐマネジメント株式会社 | ニューラルネットワーク回路およびその学習方法 |
| KR102352633B1 (ko) | 2014-07-25 | 2022-01-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발진 회로 및 그것을 포함하는 반도체 장치 |
| JP6674838B2 (ja) | 2015-05-21 | 2020-04-01 | 株式会社半導体エネルギー研究所 | 電子装置 |
| US9666606B2 (en) | 2015-08-21 | 2017-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| SG10201607278TA (en) | 2015-09-18 | 2017-04-27 | Semiconductor Energy Lab Co Ltd | Semiconductor device and electronic device |
| KR20180063084A (ko) | 2015-09-30 | 2018-06-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
| US10038402B2 (en) | 2015-10-30 | 2018-07-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| JP2017108397A (ja) | 2015-11-30 | 2017-06-15 | 株式会社半導体エネルギー研究所 | 信号処理回路、及び該信号処理回路を有する半導体装置 |
| JP6906978B2 (ja) | 2016-02-25 | 2021-07-21 | 株式会社半導体エネルギー研究所 | 半導体装置、半導体ウェハ、および電子機器 |
| TWI730091B (zh) | 2016-05-13 | 2021-06-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| JP6846297B2 (ja) | 2016-06-20 | 2021-03-24 | キオクシア株式会社 | 演算装置 |
| US10504204B2 (en) | 2016-07-13 | 2019-12-10 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device |
| US10410571B2 (en) | 2016-08-03 | 2019-09-10 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
| DE112017003898B4 (de) | 2016-08-03 | 2024-07-18 | Semiconductor Energy Laboratory Co., Ltd. | Abbildungsvorrichtungen und Bildsensor |
| CN109643514B (zh) | 2016-08-26 | 2023-04-04 | 株式会社半导体能源研究所 | 显示装置及电子设备 |
| US10319743B2 (en) | 2016-12-16 | 2019-06-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display system, and electronic device |
| JP7073090B2 (ja) | 2016-12-28 | 2022-05-23 | 株式会社半導体エネルギー研究所 | ニューラルネットワークを利用したデータ処理装置、電子部品、および電子機器 |
| WO2018138603A1 (en) | 2017-01-26 | 2018-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device including the semiconductor device |
| TW201837894A (zh) | 2017-02-15 | 2018-10-16 | 日商半導體能源研究所股份有限公司 | 半導體裝置及顯示系統 |
| TW201836020A (zh) | 2017-02-17 | 2018-10-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
| CN110832573B (zh) | 2017-04-27 | 2023-07-18 | 株式会社半导体能源研究所 | 显示单元、显示装置及电子设备 |
| KR20250078575A (ko) | 2017-08-04 | 2025-06-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| US11182670B2 (en) | 2017-11-16 | 2021-11-23 | International Business Machines Corporation | Thin-film large-area classifier |
| US12118333B2 (en) * | 2018-04-26 | 2024-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2019239246A1 (ja) | 2018-06-15 | 2019-12-19 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
| US11515873B2 (en) * | 2018-06-29 | 2022-11-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| US10924090B2 (en) | 2018-07-20 | 2021-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising holding units |
-
2019
- 2019-06-24 US US16/449,595 patent/US11515873B2/en active Active
- 2019-06-26 JP JP2019118472A patent/JP7337563B2/ja active Active
-
2022
- 2022-11-17 US US17/988,841 patent/US11870436B2/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2020009432A5 (enExample) | ||
| US10855280B2 (en) | Input/output circuit and method | |
| TW200518458A (en) | Nanotube-based switching elements and logic circuits | |
| US9531336B2 (en) | Operational amplifier and driving circuit | |
| JPWO2020128722A5 (enExample) | ||
| JP2016219090A5 (enExample) | ||
| JPWO2020031016A5 (ja) | アンプ回路 | |
| JPWO2022013676A5 (enExample) | ||
| JPWO2021038349A5 (enExample) | ||
| CN108172165A (zh) | 移位寄存器电路、驱动方法和显示装置 | |
| JPWO2021191721A5 (enExample) | ||
| JPWO2020095148A5 (ja) | 半導体装置 | |
| JPWO2019239246A5 (enExample) | ||
| JPS60134627A (ja) | 一致検出回路 | |
| JP2015207997A5 (ja) | 保持回路、保持回路の駆動方法 | |
| US20200065065A1 (en) | Full adder circuits with reduced delay | |
| US9287841B2 (en) | Gain control circuit and method capable of easing leakage current influence | |
| JPWO2020217138A5 (enExample) | ||
| EP3461007A3 (en) | Techniques for reducing uneven aging in integrated circuits | |
| JPWO2020174303A5 (ja) | 半導体装置 | |
| US6563367B1 (en) | Interconnection switch structures | |
| JP2022087630A5 (enExample) | ||
| RU2004133679A (ru) | Схемное устройство и способ для формирования сигнала двойной шины | |
| JP2018110386A5 (enExample) | ||
| US2864902A (en) | Amplifying circuit comprising a plurality of transistors |