JP2019535147A - 熱膨張整合されたデバイスを提供する転写方法 - Google Patents
熱膨張整合されたデバイスを提供する転写方法 Download PDFInfo
- Publication number
- JP2019535147A JP2019535147A JP2019540315A JP2019540315A JP2019535147A JP 2019535147 A JP2019535147 A JP 2019535147A JP 2019540315 A JP2019540315 A JP 2019540315A JP 2019540315 A JP2019540315 A JP 2019540315A JP 2019535147 A JP2019535147 A JP 2019535147A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- main surface
- circuit layer
- bonding
- handle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 109
- 239000000463 material Substances 0.000 claims abstract description 28
- 239000004065 semiconductor Substances 0.000 claims description 15
- 229910052594 sapphire Inorganic materials 0.000 claims description 9
- 239000010980 sapphire Substances 0.000 claims description 9
- 239000000853 adhesive Substances 0.000 claims description 8
- 230000001070 adhesive effect Effects 0.000 claims description 8
- 238000005498 polishing Methods 0.000 claims description 7
- 230000000295 complement effect Effects 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 238000000227 grinding Methods 0.000 claims description 4
- 229920001169 thermoplastic Polymers 0.000 claims description 4
- 239000004416 thermosoftening plastic Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 30
- 238000004519 manufacturing process Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000002131 composite material Substances 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 230000008569 process Effects 0.000 description 3
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009396 hybridization Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910001152 Bi alloy Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- DGJPPCSCQOIWCP-UHFFFAOYSA-N cadmium mercury Chemical compound [Cd].[Hg] DGJPPCSCQOIWCP-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/1469—Assemblies, i.e. hybrid integration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68354—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1302—Disposition
- H01L2224/13023—Disposition the whole bump connector protruding from the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13109—Indium [In] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13113—Bismuth [Bi] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13116—Lead [Pb] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Element Separation (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Wire Bonding (AREA)
- Storage Device Security (AREA)
Abstract
Description
Claims (20)
- 異なる材料に対する回路層の熱膨張係数(CTE)整合を可能にするための、ウエハレベルで集積回路(IC)を別基板上に転写する方法であって、
当該方法は、回路層と、第1主面と、該第1主面とは反対側の第2主面と、該第1主面に固定された基板とを有するウエハに対して実行可能であり、
当該方法は、
前記第2主面にハンドルを一時的に接合し、
前記基板の大部分を除去して前記第1主面を露出させ、
堆積された接合材料を用いて前記第1主面に第2の基板を接合する
ことを含む、
方法。 - 前記ウエハは、相補型金属酸化膜半導体(CMOS)ウエハを有する、請求項1に記載の方法。
- 前記第2主面にハンドルを一時的に接合することは、熱可塑性接着剤を塗布することを含む、請求項1に記載の方法。
- 前記基板の大部分を除去することは、研削すること及び研磨することのうちの少なくとも一方を含む、請求項1に記載の方法。
- 前記基板の大部分を除去することは、前記回路層よりも薄い基板残部を残す、請求項1に記載の方法。
- 前記回路層は約10μm厚であり、前記基板の大部分を除去することは、前記回路層よりも薄い基板残部を残す、請求項1に記載の方法。
- 前記堆積された接合材料は、接合用の酸化物を有する、請求項1に記載の方法。
- 前記第1主面に第2の基板を接合することは、
前記第1主面に前記接合材料を約2−15nmの厚さで堆積させ、
前記接合材料を約0.3−0.5nmの厚さまで研磨する
ことを含む、請求項1に記載の方法。 - 前記第2の基板は、プラズマ活性化表面又は酸化アルミニウムを有する、請求項1に記載の方法。
- 前記回路層は約10μm厚であり、前記第2の基板は約1500μm厚である、請求項1に記載の方法。
- 前記第2主面から前記ハンドルを除去することを更に含む請求項1に記載の方法。
- 熱膨張係数(CTE)整合を可能にするための、ウエハレベルで集積回路(IC)を別基板上に転写する方法であって、
当該方法は、回路層と、第1主面と、該第1主面とは反対側の第2主面と、該第1主面に固定された基板とを有する相補型金属酸化膜半導体(CMOS)ウエハに対して実行可能であり、
当該方法は、
前記第2主面にハンドルを一時的に接合し、
前記基板の相当部分を除去して、薄い基板残部の層を通して前記第1主面を露出させ、
堆積されて研磨された接合用の酸化物を用いて、前記第1主面及び前記薄い基板残部の層にサファイア基板を接合する
ことを含む、
方法。 - 前記第2主面にハンドルを一時的に接合することは、熱可塑性接着剤を塗布することを含み、
当該方法は更に、前記第2主面から前記ハンドルを除去することを含む、
請求項12に記載の方法。 - 前記基板の相当部分を除去することは、前記基板を前記基板残部まで研削すること及び研磨することのうちの少なくとも一方を含む、請求項12に記載の方法。
- 前記回路層は約10μm厚であり、前記基板残部は前記回路層よりも薄い、請求項12に記載の方法。
- 前記回路層は約10μm厚であり、前記サファイア基板は約1500μm厚である、請求項12に記載の方法。
- ウエハレベルの集積回路(IC)転写可能構造体であって、
第1主面及び該第1主面とは反対側の第2主面を持つ回路層と、
前記第1主面に固定された、前記回路層よりも実質的に薄い基板残部と、
前記第2主面に一時的に接合されたハンドルと、
堆積されて研磨された接合用の酸化物で、前記第1主面及び前記基板残部に接合されたサファイア基板と、
を含む構造体。 - 熱可塑性接着剤が前記ハンドルを前記第2主面に一時的に接着している、請求項17に記載の構造体。
- 前記回路層は約10μm厚である、請求項17に記載の構造体。
- 前記回路層は約10μm厚であり、前記サファイア基板は約1500μm厚である、請求項17に記載の構造体。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/331,149 US10453731B2 (en) | 2016-10-21 | 2016-10-21 | Direct bond method providing thermal expansion matched devices |
US15/331,149 | 2016-10-21 | ||
PCT/US2017/056875 WO2018075444A1 (en) | 2016-10-21 | 2017-10-17 | Transfer method providing thermal expansion matched devices |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2019535147A true JP2019535147A (ja) | 2019-12-05 |
Family
ID=60201679
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019540315A Pending JP2019535147A (ja) | 2016-10-21 | 2017-10-17 | 熱膨張整合されたデバイスを提供する転写方法 |
Country Status (10)
Country | Link |
---|---|
US (2) | US10453731B2 (ja) |
EP (1) | EP3529830A1 (ja) |
JP (1) | JP2019535147A (ja) |
KR (1) | KR102242125B1 (ja) |
CN (1) | CN109863586A (ja) |
CA (1) | CA3041040A1 (ja) |
IL (1) | IL266052B (ja) |
SG (1) | SG11201902587RA (ja) |
TW (1) | TW201816993A (ja) |
WO (1) | WO2018075444A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7143182B2 (ja) * | 2018-10-23 | 2022-09-28 | 株式会社ダイセル | 半導体装置製造方法および半導体装置 |
US10847569B2 (en) * | 2019-02-26 | 2020-11-24 | Raytheon Company | Wafer level shim processing |
US12046477B2 (en) * | 2021-01-08 | 2024-07-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | By-site-compensated etch back for local planarization/topography adjustment |
CN117549205B (zh) * | 2024-01-11 | 2024-04-02 | 东晶电子金华有限公司 | 一种石英晶片的抛光方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5308980A (en) | 1991-02-20 | 1994-05-03 | Amber Engineering, Inc. | Thermal mismatch accommodated infrared detector hybrid array |
US5591678A (en) | 1993-01-19 | 1997-01-07 | He Holdings, Inc. | Process of manufacturing a microelectric device using a removable support substrate and etch-stop |
GB2279808B (en) * | 1993-01-19 | 1996-11-20 | Hughes Aircraft Co | Thermally matched readout/detector assembly and method for fabricating same |
GB0019322D0 (en) * | 2000-08-08 | 2000-09-27 | Isis Innovation | Method of separating nucleoside phosphates |
US6731244B2 (en) * | 2002-06-27 | 2004-05-04 | Harris Corporation | High efficiency directional coupler |
US7535100B2 (en) * | 2002-07-12 | 2009-05-19 | The United States Of America As Represented By The Secretary Of The Navy | Wafer bonding of thinned electronic materials and circuits to high performance substrates |
US6911375B2 (en) * | 2003-06-02 | 2005-06-28 | International Business Machines Corporation | Method of fabricating silicon devices on sapphire with wafer bonding at low temperature |
US7723815B1 (en) | 2004-07-09 | 2010-05-25 | Raytheon Company | Wafer bonded composite structure for thermally matching a readout circuit (ROIC) and an infrared detector chip both during and after hybridization |
US8154099B2 (en) | 2009-08-19 | 2012-04-10 | Raytheon Company | Composite semiconductor structure formed using atomic bonding and adapted to alter the rate of thermal expansion of a substrate |
KR101581595B1 (ko) * | 2011-06-24 | 2015-12-30 | 도오꾜오까고오교 가부시끼가이샤 | 적층체의 제조 방법, 기판의 처리 방법 및 적층체 |
US20130168803A1 (en) * | 2011-09-16 | 2013-07-04 | Sionyx, Inc. | Semiconductor-On-Insulator Devices and Associated Methods |
US9673077B2 (en) * | 2012-07-03 | 2017-06-06 | Watlow Electric Manufacturing Company | Pedestal construction with low coefficient of thermal expansion top |
DE102013004559B4 (de) * | 2013-03-18 | 2015-07-23 | Apple Inc. | Bruchstabile Saphirscheibe und Verfahren zu ihrer Herstellung |
US9048091B2 (en) * | 2013-03-25 | 2015-06-02 | Infineon Technologies Austria Ag | Method and substrate for thick III-N epitaxy |
US9912084B2 (en) | 2014-08-20 | 2018-03-06 | Te Connectivity Corporation | High speed signal connector assembly |
-
2016
- 2016-10-21 US US15/331,149 patent/US10453731B2/en active Active
-
2017
- 2017-10-17 EP EP17792255.6A patent/EP3529830A1/en active Pending
- 2017-10-17 SG SG11201902587RA patent/SG11201902587RA/en unknown
- 2017-10-17 JP JP2019540315A patent/JP2019535147A/ja active Pending
- 2017-10-17 WO PCT/US2017/056875 patent/WO2018075444A1/en unknown
- 2017-10-17 CA CA3041040A patent/CA3041040A1/en active Pending
- 2017-10-17 CN CN201780064670.1A patent/CN109863586A/zh active Pending
- 2017-10-17 KR KR1020197014262A patent/KR102242125B1/ko active IP Right Grant
- 2017-10-18 TW TW106135743A patent/TW201816993A/zh unknown
-
2019
- 2019-04-15 IL IL266052A patent/IL266052B/en unknown
- 2019-10-03 US US16/592,556 patent/US11177155B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TW201816993A (zh) | 2018-05-01 |
SG11201902587RA (en) | 2019-05-30 |
US20180114713A1 (en) | 2018-04-26 |
KR20190065430A (ko) | 2019-06-11 |
US11177155B2 (en) | 2021-11-16 |
US20200035539A1 (en) | 2020-01-30 |
CA3041040A1 (en) | 2018-04-26 |
WO2018075444A1 (en) | 2018-04-26 |
KR102242125B1 (ko) | 2021-04-20 |
US10453731B2 (en) | 2019-10-22 |
EP3529830A1 (en) | 2019-08-28 |
IL266052B (en) | 2022-02-01 |
CN109863586A (zh) | 2019-06-07 |
IL266052A (en) | 2019-06-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11177155B2 (en) | Direct bond method providing thermal expansion matched devices | |
US10580823B2 (en) | Wafer level packaging method | |
TW202013436A (zh) | 在微電子中將不相似材料結合的技術 | |
US8580594B2 (en) | Method of fabricating a semiconductor device having recessed bonding site | |
TWI445101B (zh) | 暫時性半導體結構接合方法及相關經接合的半導體結構 | |
US8697542B2 (en) | Method for thin die-to-wafer bonding | |
KR20120112091A (ko) | 접합 반도체 구조 형성 방법 및 그 방법에 의해 형성된 반도체 구조 | |
JP2018049973A5 (ja) | ||
TW201729303A (zh) | 半導體結構及其製造方法 | |
US20180114726A1 (en) | Method and system for vertical integration of elemental and compound semiconductors | |
CN104051423A (zh) | 互连装置和方法 | |
EP2849207B1 (en) | Heat dissipation substrate and method for producing same | |
US10049909B2 (en) | Wafer handler and methods of manufacture | |
US20060177994A1 (en) | Methods and apparatuses for manufacturing ultra thin device layers for integrated circuit devices | |
JP2009117688A5 (ja) | ||
US20180247822A1 (en) | Method Of Fabricating A Semiconductor Wafer Including A Through Substrate Via (TSV) And A Stepped Support Ring On A Back Side Of The Wafer | |
US20080237718A1 (en) | Methods of forming highly oriented diamond films and structures formed thereby | |
US9202801B2 (en) | Thin substrate and mold compound handling using an electrostatic-chucking carrier | |
US11164749B1 (en) | Warpage reduction | |
US20240079360A1 (en) | Bonding structure using two oxide layers with different stress levels, and related method | |
Phommahaxay et al. | Evolution of temporary wafer (de) bonding technology towards low temperature processes for enhanced 3D integration | |
Edelstein et al. | Process Integration Aspects of Back Illuminated CMOS Imagers Using Smart StackingTM Technology with Best in Class Direct Bonding | |
TW202410298A (zh) | 具有金屬平面層的基板穿孔以及製造其之方法 | |
TW202203313A (zh) | 半導體結構的製作方法 | |
US20160293711A1 (en) | Substrate For Molecular Beam Epitaxy (MBE) HGCDTE Growth |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190410 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200424 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200602 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200828 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20210119 |