JP2019531589A - アレイ基板及びその製作方法 - Google Patents
アレイ基板及びその製作方法 Download PDFInfo
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- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 239000004973 liquid crystal related substance Substances 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 2
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- 239000010409 thin film Substances 0.000 abstract description 2
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- 239000013077 target material Substances 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
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Abstract
Description
図1は、従来の回転ターゲットマグネトロンスパッタリング装置によりアレイ基板のベース基板上に形成された能動フィルムの模式図である。マグネトロンスパッタリング装置は、ターゲット表面上に形成された直交する電磁界を利用して、電子をターゲット表面の特定の領域に閉じ込んでイオン化効率を向上させ、プラズマの密度及びエネルギーを増加させることにより、高速のスパッタリング成膜を実現する装置である。マグネトロンスパッタリング装置には、通常、平面ターゲットマグネトロンスパッタリング装置及び回転ターゲットマグネトロンスパッタリング装置がある。どちらのマグネトロンスパッタリング装置であっても、ターゲット材間に隙間があるので、また、マグネトロンスパッタリング装置における磁界の分布が不均一であるので、堆積されたフィルムは、ベース基板上の異なる位置において膜厚が違う。図1に示されたように、従来の回転ターゲットマグネトロンスパッタリング装置によりベース基板上に堆積されたフィルムの膜厚には周期的な違いがある。図1中のA領域(請求の範囲の“第1の領域”に相当する)で示したように、ターゲット材が対面する位置においては、フィルムの厚みが厚く、図1中のB領域(請求の範囲の“第2の領域”に相当する)で示したように、ターゲット材間の位置においては、フィルムの厚みは小さい。ここで、A領域及びB領域の幅は数cmのレベル(例えば、約8cm)である。このようなフィルムの周期的な厚み変化は、ベース基板のA領域及びB領域において形成されたフィルムトランジスタ(TFT)の動作性能の違いに繋がり、最終的には、いわゆるターゲットむら(即ち、表示ばらつき)を起こす。以下、有機発光ダイオード(OLED)アレイ基板を例に挙げて、A領域及びB領域の膜厚の違いによる問題点について説明する。
IDS=UDS/R=UDSS/(2ρt)=UDSWd/(2ρt)
f(x)=a0+a1(x−x0)+a2(x−x0)2+a3(x−x0)3
f(x)=a0+a1(TA+x0−x)+a2(TA+x0−x)2+a3(TA+x0−x)3
本開示の実施例による表示パネルは、以上の第I部分において記述したアレイ基板を含む。これに対し、本開示の実施例による表示装置(例えば、OLED表示装置、LCD表示装置等)も以上の第I部分において記述したアレイ基板を含む。以上の第I部分において記述したアレイ基板を採用したので、当該表示パネル及び表示装置の表示効果を改善でき、ここでは、説明を繰り返さない。
図5は本開示の実施例によるアレイ基板の製作方法のフローチャートである。図5に示されたように、アレイ基板の製作方法は、ステップ502、504及び506を含む。
304 ゲート絶縁層
306 能動層
308 ソース
310 ドレイン
Claims (15)
- フィルムトランジスタを含むアレイ基板であって、
前記アレイ基板は少なくとも第1の領域及び第2の領域を有し、
フィルムトランジスタの能動層の厚みに対するソース又はドレインと能動層との間の重なり面積の比率が、前記第1の領域及び第2の領域において均一に保持されるように、前記第1の領域におけるフィルムトランジスタの能動層の厚みは、前記第2の領域におけるフィルムトランジスタの能動層の厚みより大きく、且つ、前記第1の領域におけるフィルムトランジスタのソース又はドレインと能動層との間の重なり面積は、前記第2の領域におけるフィルムトランジスタのソース又はドレインと能動層との間の重なり面積より大きい、
アレイ基板。 - フィルムトランジスタのソース又はドレインと能動層との間の重なり部分の長さは能動層チャネル領域の幅であり、且つ、前記重なり部分の幅は固定値であり、
フィルムトランジスタの能動層チャネル領域の幅と能動層の厚みとの比率は、前記第1の領域及び第2の領域において均一に保持される、
請求項1に記載のアレイ基板。 - 前記第1の領域及び第2の領域の少なくとも一方の領域における各フィルムトランジスタの能動層の厚みが能動層の位置により変化する曲線はフィッティング関数により示され、且つ、前記少なくとも一方の領域における各フィルムトランジスタのソース又はドレインと能動層との間の重なり面積は、前記フィッティング関数に関して比例して変化する、
請求項1に記載のアレイ基板。 - 前記第1の領域及び第2の領域の少なくとも一方の領域における各フィルムトランジスタの能動層の厚みが能動層の位置により変化する曲線はフィッティング関数により示され、且つ、前記少なくとも一方の領域における各フィルムトランジスタの能動層チャネル領域の幅は、前記フィッティング関数に関して比例して変化する、
請求項2に記載のアレイ基板。 - 前記第1の領域及び第2の領域は周期的に交互に配列される、
請求項1から4のいずれか一項に記載のアレイ基板。 - 前記フィルムトランジスタは、
有機発光ダイオードに駆動電流を印加するための駆動フィルムトランジスタと、
前記駆動フィルムトランジスタに駆動電圧を印加するためのスイッチングフィルムトランジスタと、
を含む、
請求項1から5のいずれか一項に記載のアレイ基板。 - 前記フィルムトランジスタは、液晶層にデータ電圧を印加するためのスイッチングフィルムトランジスタを含む、
請求項1から5のいずれか一項に記載のアレイ基板。 - ベース基板において、少なくとも厚みの大きい第1の領域及び厚みの小さい第2の領域を有する能動層の厚みが位置により変化する状況を取得することと、
前記変化する状況により、フィルムトランジスタの能動層の厚みに対するソース又はドレインと能動層との間の重なり面積の比率が前記第1の領域及び第2の領域において均一に保持されるように、形成すべき前記重なり面積を特定することと、
前記ベース基板上に、形成されるフィルムトランジスタが特定された重なり面積を有するように、フィルムトランジスタを形成することと、
を含む、
アレイ基板の製作方法。 - フィルムトランジスタのソース又はドレインと能動層との間の重なり部分の長さは能動層チャネル領域の幅であり、且つ、前記重なり部分の幅は固定値であり、
前記重なり面積を特定することは、
能動層の厚みに対する能動層チャネル領域の幅の比率が前記第1の領域及び第2の領域において均一に保持されるように、形成すべき能動層チャネル領域の幅を特定すること、
を含む、
請求項8に記載の製作方法。 - ベース基板において能動層の厚みが位置により変化する状況を取得することは、
前記ベース基板と同様のテスト用基板上に能動フィルムを形成することと、
前記第1の領域及び第2の領域における能動フィルムの厚みを測定することと、
を含む、
請求項8に記載の製作方法。 - 前記重なり面積を特定することは、
測定された能動フィルムの厚みにより、前記第1の領域及び第2の領域の少なくとも一方の領域における能動層の厚みが能動層の位置により変化する曲線のフィッティング関数を特定することと、
前記重なり面積が前記フィッティング関数に関して比例して変化するように、前記少なくとも一方の領域における前記重なり面積を特定することと、
を含む、
請求項10に記載の製作方法。 - ベース基板において能動層の厚みが位置により変化する状況を取得することは、
前記ベース基板と同様のテスト用基板上に能動フィルムを形成することと、
前記第1の領域及び第2の領域における能動フィルムの厚みを測定することと、
を含む、
請求項9に記載の製作方法。 - 形成すべき能動層チャネル領域の幅を特定することは、
測定された能動フィルムの厚みにより、前記第1の領域及び第2の領域の少なくとも一方の領域における能動層の厚みが能動層の位置により変化する曲線のフィッティング関数を特定することと、
前記能動層チャネル領域の幅が前記フィッティング関数に関して比例して変化するように、前記少なくとも一方の領域における能動層チャネル領域の幅を特定することと、
を含む、
請求項12に記載の製作方法。 - ベース基板上にフィルムトランジスタを形成することは、
前記ベース基板上にゲートを形成することと、
前記ゲート上にゲート絶縁層を形成することと、
前記ゲート絶縁層上に能動フィルムを形成することと、
前記能動フィルムをパターニングして能動層を形成することと、
前記能動層上にソース及びドレインを形成することと、
を含む、
請求項8から13のいずれか一項に記載の製作方法。 - 能動フィルム又は能動層の形成後、前記変化する状況を取得し、前記重なり面積を特定する、
請求項14に記載の製作方法。
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