JP2019517736A5 - - Google Patents

Download PDF

Info

Publication number
JP2019517736A5
JP2019517736A5 JP2018562373A JP2018562373A JP2019517736A5 JP 2019517736 A5 JP2019517736 A5 JP 2019517736A5 JP 2018562373 A JP2018562373 A JP 2018562373A JP 2018562373 A JP2018562373 A JP 2018562373A JP 2019517736 A5 JP2019517736 A5 JP 2019517736A5
Authority
JP
Japan
Prior art keywords
chamber
coupled
transfer
plasma cleaning
processing system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2018562373A
Other languages
English (en)
Japanese (ja)
Other versions
JP7190905B2 (ja
JP2019517736A (ja
Filing date
Publication date
Priority claimed from US15/499,100 external-priority patent/US20170350038A1/en
Application filed filed Critical
Priority claimed from PCT/US2017/031590 external-priority patent/WO2017209900A1/en
Publication of JP2019517736A publication Critical patent/JP2019517736A/ja
Publication of JP2019517736A5 publication Critical patent/JP2019517736A5/ja
Application granted granted Critical
Publication of JP7190905B2 publication Critical patent/JP7190905B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2018562373A 2016-06-03 2017-05-08 半導体基板から炭素汚染物質及び表面酸化物を除去するための処理チャンバを有する真空プラットフォーム Active JP7190905B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201662345160P 2016-06-03 2016-06-03
US62/345,160 2016-06-03
US201762491143P 2017-04-27 2017-04-27
US62/491,143 2017-04-27
US15/499,100 US20170350038A1 (en) 2016-06-03 2017-04-27 Vacuum platform with process chambers for removing carbon contaminants and surface oxide from semiconductor substrates
US15/499,100 2017-04-27
PCT/US2017/031590 WO2017209900A1 (en) 2016-06-03 2017-05-08 A vacuum platform with process chambers for removing carbon contaminants and surface oxide from semiconductor substrates

Publications (3)

Publication Number Publication Date
JP2019517736A JP2019517736A (ja) 2019-06-24
JP2019517736A5 true JP2019517736A5 (ko) 2020-06-18
JP7190905B2 JP7190905B2 (ja) 2022-12-16

Family

ID=61725115

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018562373A Active JP7190905B2 (ja) 2016-06-03 2017-05-08 半導体基板から炭素汚染物質及び表面酸化物を除去するための処理チャンバを有する真空プラットフォーム

Country Status (3)

Country Link
JP (1) JP7190905B2 (ko)
KR (1) KR102196746B1 (ko)
TW (1) TWI703665B (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7114384B2 (ja) * 2018-07-26 2022-08-08 株式会社アルバック 酸化膜除去方法、および、酸化膜除去装置
US20200411342A1 (en) 2019-06-27 2020-12-31 Applied Materials, Inc. Beamline architecture with integrated plasma processing

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070020890A1 (en) * 2005-07-19 2007-01-25 Applied Materials, Inc. Method and apparatus for semiconductor processing
US7658802B2 (en) * 2005-11-22 2010-02-09 Applied Materials, Inc. Apparatus and a method for cleaning a dielectric film
US7942969B2 (en) * 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
JP6114698B2 (ja) * 2011-03-01 2017-04-12 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated デュアルロードロック構成内の除害及びストリップ処理チャンバ
KR102245729B1 (ko) * 2013-08-09 2021-04-28 어플라이드 머티어리얼스, 인코포레이티드 에피택셜 성장 이전에 기판 표면을 사전 세정하기 위한 방법 및 장치
KR102133895B1 (ko) * 2013-11-06 2020-07-15 어플라이드 머티어리얼스, 인코포레이티드 Dc 바이어스 변조에 의한 입자 발생 억제기
TWI643971B (zh) * 2014-01-05 2018-12-11 美商應用材料股份有限公司 使用空間原子層沉積或脈衝化學氣相沉積之薄膜沉積
US9508561B2 (en) * 2014-03-11 2016-11-29 Applied Materials, Inc. Methods for forming interconnection structures in an integrated cluster system for semicondcutor applications

Similar Documents

Publication Publication Date Title
US10626500B2 (en) Showerhead design
US20140076494A1 (en) Processing system
US10123379B2 (en) Substrate support with quadrants
JP2017522718A5 (ko)
TWI735907B (zh) 處理腔室與泵送系統
KR200491849Y1 (ko) 슬릿 밸브 도어들을 구비한 로드 락 챔버
CN103035469A (zh) 对称等离子体处理室
JP4547119B2 (ja) 真空処理装置
TWI710658B (zh) 用於SiC高溫氧化製程的製作腔室及熱處理爐
TWI749184B (zh) 具有串接處理區域的電漿腔室
JP2023113697A (ja) 改良されたフロー均一性/ガスコンダクタンスを備えた可変処理容積に対処するための対称チャンバ本体設計アーキテクチャ
TW202122626A (zh) 用於改進基板上的邊緣薄膜厚度均勻性的處理套件
TW201703137A (zh) 成膜裝置、成膜方法及基板載置台
JP2019517736A5 (ko)
JP2015122503A (ja) 基板処理装置
TWI690617B (zh) 用於半導體製程的腔室設計
JP3210415U (ja) 薄膜封入マスクの予熱及び基板のバッファチャンバ
TWI627669B (zh) Gas injection device for inductively coupled plasma chamber
JP4063661B2 (ja) 半導体製造装置及び半導体の製造法
TW201428851A (zh) 用於背側鈍化的設備及方法
TWI601230B (zh) Substrate processing system
TWI644073B (zh) 高溫處理室蓋體
JP6567886B2 (ja) プラズマ処理装置
KR101798371B1 (ko) 유도결합 플라즈마 처리장치의 가스공급구조
KR102495469B1 (ko) 일괄 처리 챔버