JP2019517017A5 - - Google Patents

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Publication number
JP2019517017A5
JP2019517017A5 JP2018552155A JP2018552155A JP2019517017A5 JP 2019517017 A5 JP2019517017 A5 JP 2019517017A5 JP 2018552155 A JP2018552155 A JP 2018552155A JP 2018552155 A JP2018552155 A JP 2018552155A JP 2019517017 A5 JP2019517017 A5 JP 2019517017A5
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JP
Japan
Prior art keywords
target
design
pitch
hybrid
hybrid periodic
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JP2018552155A
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English (en)
Japanese (ja)
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JP2019517017A (ja
JP6952711B2 (ja
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Priority claimed from PCT/US2016/060626 external-priority patent/WO2017176314A1/en
Publication of JP2019517017A publication Critical patent/JP2019517017A/ja
Publication of JP2019517017A5 publication Critical patent/JP2019517017A5/ja
Application granted granted Critical
Publication of JP6952711B2 publication Critical patent/JP6952711B2/ja
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JP2018552155A 2016-04-04 2016-11-04 ターゲットデザイン方法、製造方法及び計量ターゲット Active JP6952711B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662318086P 2016-04-04 2016-04-04
US62/318,086 2016-04-04
PCT/US2016/060626 WO2017176314A1 (en) 2016-04-04 2016-11-04 Process compatibility improvement by fill factor modulation

Publications (3)

Publication Number Publication Date
JP2019517017A JP2019517017A (ja) 2019-06-20
JP2019517017A5 true JP2019517017A5 (OSRAM) 2019-12-12
JP6952711B2 JP6952711B2 (ja) 2021-10-20

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ID=60001339

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018552155A Active JP6952711B2 (ja) 2016-04-04 2016-11-04 ターゲットデザイン方法、製造方法及び計量ターゲット

Country Status (8)

Country Link
US (1) US10579768B2 (OSRAM)
EP (1) EP3440511B1 (OSRAM)
JP (1) JP6952711B2 (OSRAM)
KR (1) KR102788661B1 (OSRAM)
CN (1) CN109073981B (OSRAM)
IL (1) IL261879B (OSRAM)
TW (1) TWI710860B (OSRAM)
WO (1) WO2017176314A1 (OSRAM)

Families Citing this family (9)

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US11112704B2 (en) * 2017-02-10 2021-09-07 Kla-Tencor Corporation Mitigation of inaccuracies related to grating asymmetries in scatterometry measurements
CN110741374B (zh) 2017-06-06 2024-06-11 科磊股份有限公司 光罩优化算法及最优目标设计
US10628544B2 (en) 2017-09-25 2020-04-21 International Business Machines Corporation Optimizing integrated circuit designs based on interactions between multiple integration design rules
US20190250504A1 (en) * 2017-10-23 2019-08-15 Kla-Tencor Corporation Reduction or elimination of pattern placement error in metrology measurements
KR102381168B1 (ko) * 2018-10-30 2022-03-30 케이엘에이 코포레이션 비대칭 수차의 추정
NL2024878A (en) * 2019-02-19 2020-08-27 Asml Holding Nv Metrology system, lithographic apparatus, and method
US11378394B1 (en) * 2020-12-11 2022-07-05 Kla Corporation On-the-fly scatterometry overlay metrology target
EP4341752A4 (en) * 2021-12-17 2025-07-30 Kla Corp COVER TARGET DESIGN FOR IMPROVED TARGET PLACEMENT ACCURACY
US12411420B2 (en) * 2023-09-29 2025-09-09 Kla Corporation Small in-die target design for overlay measurement

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US6303252B1 (en) * 1999-12-27 2001-10-16 United Microelectronics Corp. Reticle having assist feature between semi-dense lines
TW512424B (en) * 2000-05-01 2002-12-01 Asml Masktools Bv Hybrid phase-shift mask
TW479157B (en) 2000-07-21 2002-03-11 Asm Lithography Bv Mask for use in a lithographic projection apparatus and method of making the same
US6433878B1 (en) * 2001-01-29 2002-08-13 Timbre Technology, Inc. Method and apparatus for the determination of mask rules using scatterometry
US6519760B2 (en) * 2001-02-28 2003-02-11 Asml Masktools, B.V. Method and apparatus for minimizing optical proximity effects
SG108975A1 (en) 2003-07-11 2005-02-28 Asml Netherlands Bv Marker structure for alignment or overlay to correct pattern induced displacement, mask pattern for defining such a marker structure and lithographic projection apparatus using such a mask pattern
SG111289A1 (en) * 2003-11-05 2005-05-30 Asml Masktools Bv A method for performing transmission tuning of a mask pattern to improve process latitude
ATE476687T1 (de) * 2003-12-19 2010-08-15 Ibm Differentielle metrologie für kritische abmessung und überlagerung
JP4634849B2 (ja) * 2005-04-12 2011-02-16 株式会社東芝 集積回路のパターンレイアウト、フォトマスク、半導体装置の製造方法、及びデータ作成方法
US7749662B2 (en) * 2005-10-07 2010-07-06 Globalfoundries Inc. Process margin using discrete assist features
US7925486B2 (en) 2006-03-14 2011-04-12 Kla-Tencor Technologies Corp. Computer-implemented methods, carrier media, and systems for creating a metrology target structure design for a reticle layout
US7911612B2 (en) * 2007-06-13 2011-03-22 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
KR100880232B1 (ko) 2007-08-20 2009-01-28 주식회사 동부하이텍 미세 마스크 및 그를 이용한 패턴 형성 방법
JP2009109581A (ja) * 2007-10-26 2009-05-21 Toshiba Corp 半導体装置の製造方法
JP5529391B2 (ja) * 2008-03-21 2014-06-25 ルネサスエレクトロニクス株式会社 ハーフトーン型位相シフトマスク、そのハーフトーン型位相シフトマスクを有する半導体装置の製造装置、およびそのハーフトーン型位相シフトマスクを用いた半導体装置の製造方法
JP5627394B2 (ja) * 2010-10-29 2014-11-19 キヤノン株式会社 マスクのデータ及び露光条件を決定するためのプログラム、決定方法、マスク製造方法、露光方法及びデバイス製造方法
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WO2015109036A1 (en) * 2014-01-15 2015-07-23 Kla-Tencor Corporation Overlay measurement of pitch walk in multiply patterned targets
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NL2017300A (en) * 2015-08-27 2017-03-01 Asml Netherlands Bv Method and apparatus for measuring a parameter of a lithographic process, substrate and patterning devices for use in the method
CN109073980B (zh) * 2015-12-17 2021-06-18 Asml荷兰有限公司 量测设备的调节或基于已测量目标的特性而由量测设备进行的测量

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