JP2019500714A5 - - Google Patents

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Publication number
JP2019500714A5
JP2019500714A5 JP2018547865A JP2018547865A JP2019500714A5 JP 2019500714 A5 JP2019500714 A5 JP 2019500714A5 JP 2018547865 A JP2018547865 A JP 2018547865A JP 2018547865 A JP2018547865 A JP 2018547865A JP 2019500714 A5 JP2019500714 A5 JP 2019500714A5
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JP
Japan
Prior art keywords
transistor
storage cell
sram
body bias
read
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JP2018547865A
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English (en)
Japanese (ja)
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JP6916448B2 (ja
JP2019500714A (ja
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Priority claimed from US14/954,481 external-priority patent/US9799395B2/en
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Publication of JP2019500714A5 publication Critical patent/JP2019500714A5/ja
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Publication of JP6916448B2 publication Critical patent/JP6916448B2/ja
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JP2018547865A 2015-11-30 2016-11-30 低電力及び高性能ｓｒａｍにおける感知増幅器 Active JP6916448B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/954,481 2015-11-30
US14/954,481 US9799395B2 (en) 2015-11-30 2015-11-30 Sense amplifier in low power and high performance SRAM
PCT/US2016/064183 WO2017095902A1 (en) 2015-11-30 2016-11-30 Sense amplifier in low power and high performance sram

Publications (3)

Publication Number Publication Date
JP2019500714A JP2019500714A (ja) 2019-01-10
JP2019500714A5 true JP2019500714A5 (https=) 2020-01-09
JP6916448B2 JP6916448B2 (ja) 2021-08-11

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ID=58777720

Family Applications (1)

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JP2018547865A Active JP6916448B2 (ja) 2015-11-30 2016-11-30 低電力及び高性能ｓｒａｍにおける感知増幅器

Country Status (5)

Country Link
US (2) US9799395B2 (https=)
EP (1) EP3384496B1 (https=)
JP (1) JP6916448B2 (https=)
CN (1) CN108352175B (https=)
WO (1) WO2017095902A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9847133B2 (en) 2016-01-19 2017-12-19 Ememory Technology Inc. Memory array capable of performing byte erase operation
KR102444390B1 (ko) * 2017-10-23 2022-09-19 현대자동차주식회사 차량, 차량 보안 시스템 및 차량 보안 방법
JP2020027674A (ja) * 2018-08-10 2020-02-20 キオクシア株式会社 半導体メモリ
US10418093B1 (en) * 2018-08-31 2019-09-17 Micron Technology, Inc. DRAM sense amplifier active matching fill features for gap equivalence systems and methods
US11081167B1 (en) * 2020-06-26 2021-08-03 Sandisk Technologies Llc Sense amplifier architecture for low supply voltage operations
US11990179B2 (en) 2020-10-14 2024-05-21 Samsung Electronics Co., Ltd. Memory device using a plurality of supply voltages and operating method thereof
US12176025B2 (en) * 2021-07-09 2024-12-24 Stmicroelectronics International N.V. Adaptive body bias management for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)
JP7502513B1 (ja) 2023-03-28 2024-06-18 華邦電子股▲ふん▼有限公司 半導体記憶装置、制御方法及び制御装置
JP7515653B1 (ja) 2023-04-07 2024-07-12 華邦電子股▲ふん▼有限公司 半導体記憶装置及びその制御方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1027476A (ja) * 1996-04-08 1998-01-27 Texas Instr Inc <Ti> Ｓｒａｍセル
US6807118B2 (en) * 2003-01-23 2004-10-19 Hewlett-Packard Development Company, L.P. Adjustable offset differential amplifier
KR100542710B1 (ko) * 2003-10-02 2006-01-11 주식회사 하이닉스반도체 차동 증폭기 및 이를 채용한 비트라인 센스 증폭기
US7338817B2 (en) 2005-03-31 2008-03-04 Intel Corporation Body bias compensation for aged transistors
US7330388B1 (en) 2005-09-23 2008-02-12 Cypress Semiconductor Corporation Sense amplifier circuit and method of operation
US7333379B2 (en) * 2006-01-12 2008-02-19 International Business Machines Corporation Balanced sense amplifier circuits with adjustable transistor body bias
KR100735754B1 (ko) * 2006-02-03 2007-07-06 삼성전자주식회사 센스 앰프 플립 플롭
US8362807B2 (en) * 2010-10-13 2013-01-29 Taiwan Semiconductor Manufacturing Company, Ltd. Offset compensation for sense amplifiers

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