CN108352175B - 低功率高性能sram中的感测放大器 - Google Patents

低功率高性能sram中的感测放大器 Download PDF

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Publication number
CN108352175B
CN108352175B CN201680064174.1A CN201680064174A CN108352175B CN 108352175 B CN108352175 B CN 108352175B CN 201680064174 A CN201680064174 A CN 201680064174A CN 108352175 B CN108352175 B CN 108352175B
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Prior art keywords
transistor
memory cell
read
sense amplifier
body bias
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CN201680064174.1A
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Chinese (zh)
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CN108352175A (zh
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维诺德·梅内塞斯
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Texas Instruments Inc
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Texas Instruments Inc
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Static Random-Access Memory (AREA)
CN201680064174.1A 2015-11-30 2016-11-30 低功率高性能sram中的感测放大器 Active CN108352175B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/954,481 2015-11-30
US14/954,481 US9799395B2 (en) 2015-11-30 2015-11-30 Sense amplifier in low power and high performance SRAM
PCT/US2016/064183 WO2017095902A1 (en) 2015-11-30 2016-11-30 Sense amplifier in low power and high performance sram

Publications (2)

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CN108352175A CN108352175A (zh) 2018-07-31
CN108352175B true CN108352175B (zh) 2022-05-24

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US (2) US9799395B2 (https=)
EP (1) EP3384496B1 (https=)
JP (1) JP6916448B2 (https=)
CN (1) CN108352175B (https=)
WO (1) WO2017095902A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9847133B2 (en) 2016-01-19 2017-12-19 Ememory Technology Inc. Memory array capable of performing byte erase operation
KR102444390B1 (ko) * 2017-10-23 2022-09-19 현대자동차주식회사 차량, 차량 보안 시스템 및 차량 보안 방법
JP2020027674A (ja) * 2018-08-10 2020-02-20 キオクシア株式会社 半導体メモリ
US10418093B1 (en) * 2018-08-31 2019-09-17 Micron Technology, Inc. DRAM sense amplifier active matching fill features for gap equivalence systems and methods
US11081167B1 (en) * 2020-06-26 2021-08-03 Sandisk Technologies Llc Sense amplifier architecture for low supply voltage operations
US11990179B2 (en) 2020-10-14 2024-05-21 Samsung Electronics Co., Ltd. Memory device using a plurality of supply voltages and operating method thereof
US12176025B2 (en) * 2021-07-09 2024-12-24 Stmicroelectronics International N.V. Adaptive body bias management for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)
JP7502513B1 (ja) 2023-03-28 2024-06-18 華邦電子股▲ふん▼有限公司 半導体記憶装置、制御方法及び制御装置
JP7515653B1 (ja) 2023-04-07 2024-07-12 華邦電子股▲ふん▼有限公司 半導体記憶装置及びその制御方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW442790B (en) * 1996-04-08 2001-06-23 Texas Instruments Inc Low voltage, low power static random access memory cell
US7330388B1 (en) * 2005-09-23 2008-02-12 Cypress Semiconductor Corporation Sense amplifier circuit and method of operation

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6807118B2 (en) * 2003-01-23 2004-10-19 Hewlett-Packard Development Company, L.P. Adjustable offset differential amplifier
KR100542710B1 (ko) * 2003-10-02 2006-01-11 주식회사 하이닉스반도체 차동 증폭기 및 이를 채용한 비트라인 센스 증폭기
US7338817B2 (en) 2005-03-31 2008-03-04 Intel Corporation Body bias compensation for aged transistors
US7333379B2 (en) * 2006-01-12 2008-02-19 International Business Machines Corporation Balanced sense amplifier circuits with adjustable transistor body bias
KR100735754B1 (ko) * 2006-02-03 2007-07-06 삼성전자주식회사 센스 앰프 플립 플롭
US8362807B2 (en) * 2010-10-13 2013-01-29 Taiwan Semiconductor Manufacturing Company, Ltd. Offset compensation for sense amplifiers

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW442790B (en) * 1996-04-08 2001-06-23 Texas Instruments Inc Low voltage, low power static random access memory cell
US7330388B1 (en) * 2005-09-23 2008-02-12 Cypress Semiconductor Corporation Sense amplifier circuit and method of operation

Also Published As

Publication number Publication date
US9799395B2 (en) 2017-10-24
EP3384496A4 (en) 2018-12-12
US10008261B2 (en) 2018-06-26
EP3384496B1 (en) 2021-08-25
JP6916448B2 (ja) 2021-08-11
CN108352175A (zh) 2018-07-31
JP2019500714A (ja) 2019-01-10
WO2017095902A1 (en) 2017-06-08
EP3384496A1 (en) 2018-10-10
US20180005693A1 (en) 2018-01-04
US20170154672A1 (en) 2017-06-01

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