JP2019212775A - 基板載置台及び基板検査装置 - Google Patents
基板載置台及び基板検査装置 Download PDFInfo
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- JP2019212775A JP2019212775A JP2018108107A JP2018108107A JP2019212775A JP 2019212775 A JP2019212775 A JP 2019212775A JP 2018108107 A JP2018108107 A JP 2018108107A JP 2018108107 A JP2018108107 A JP 2018108107A JP 2019212775 A JP2019212775 A JP 2019212775A
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- 239000000758 substrate Substances 0.000 title claims abstract description 30
- 238000007689 inspection Methods 0.000 title claims description 12
- 239000003507 refrigerant Substances 0.000 claims abstract description 68
- 239000004065 semiconductor Substances 0.000 claims description 19
- 239000000523 sample Substances 0.000 claims description 18
- 239000002826 coolant Substances 0.000 claims description 10
- 230000001154 acute effect Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 9
- 238000010521 absorption reaction Methods 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000013500 data storage Methods 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Tests Of Electronic Circuits (AREA)
Abstract
Description
本開示の一実施形態に係る基板検査装置について、プローバを例に挙げて説明する。図1は、プローバの構成例を示す斜視図である。
図3は、ステージの構成例を示す断面図である。図4は、ステージ内部の冷媒流路の一例の説明図である。図4は、平面視における冷媒流路の形状の概略を示す。また、図4では、冷媒の流れる方向を矢印で示す。図5、図6、及び図7は、それぞれ図4のA−A線断面図、B−B線断面図、及びC−C線断面図である。
図10は、ステージ11のウエハ載置面における温度分布を示す図である。図10の上段には、図4から図7を参照して説明したチャックトップ11cを有するステージ11を用いたときのステージ11のウエハ載置面における温度分布のシミュレーション結果(実施例の結果)を示す。一方、図10の下段には、冷媒流路が同一平面に配置されているチャックトップ11cを有するステージ11を用いたときのステージ11のウエハ載置面における温度分布のシミュレーション結果(比較例の結果)を示す。
11 ステージ
11c チャックトップ
17 プローブカード
101 下部板
101a 溝
102 中間板
102a 溝
103 上部板
F 冷媒流路
F1 第1流路
F2 第2流路
I 流入口
O 流出口
W ウエハ
Claims (7)
- 内部に冷媒流路が形成され、上面に基板を載置する基板載置台であって、
前記冷媒流路は、
流入口を有する第1流路と、
前記第1流路と連通し、流出口を有する第2流路と、
を有し、
前記第1流路は、前記第2流路よりも下方に設けられている、
基板載置台。 - 平面視で、前記第1流路の一部は前記第2流路と重なるように設けられている、
請求項1に記載の基板載置台。 - 平面視で、前記第1流路は、鋭角を有する流路を含まない、
請求項1又は2に記載の基板載置台。 - 前記第2流路の長さは、前記第1流路の長さよりも長い、
請求項1乃至3のいずれか一項に記載の基板載置台。 - 前記第1流路は、前記第2流路よりも断面積が小さい、
請求項1乃至4のいずれか一項に記載の基板載置台。 - 前記冷媒流路は、複数形成されている、
請求項1乃至5のいずれか一項に記載の基板載置台。 - 基板に形成された半導体デバイスの電気的特性を検査する基板検査装置であって、
前記基板を載置する基板載置台と、
前記基板載置台の前記基板が載置される面に対向して設けられ、前記半導体デバイスと電気的に接触可能な多数のプローブを有するプローブカードと、
を備え、
前記基板載置台は、内部に形成された冷媒流路を有し、
前記冷媒流路は、
流入口を有する第1流路と、
前記第1流路と連通し、流出口を有する第2流路と、
を有し、
前記第1流路は、前記第2流路よりも下方に設けられている、
基板検査装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018108107A JP7090478B2 (ja) | 2018-06-05 | 2018-06-05 | 基板載置台及び基板検査装置 |
KR1020190065307A KR102292521B1 (ko) | 2018-06-05 | 2019-06-03 | 기판 배치대 및 기판 검사 장치 |
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---|---|---|---|
JP2018108107A JP7090478B2 (ja) | 2018-06-05 | 2018-06-05 | 基板載置台及び基板検査装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019212775A true JP2019212775A (ja) | 2019-12-12 |
JP7090478B2 JP7090478B2 (ja) | 2022-06-24 |
Family
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JP2018108107A Active JP7090478B2 (ja) | 2018-06-05 | 2018-06-05 | 基板載置台及び基板検査装置 |
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JP (1) | JP7090478B2 (ja) |
KR (1) | KR102292521B1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113451198A (zh) * | 2020-03-24 | 2021-09-28 | 东京毅力科创株式会社 | 基板载置台及基板处理装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002124560A (ja) * | 2000-10-16 | 2002-04-26 | Sumitomo Heavy Ind Ltd | ウエハーチャック用冷却/加熱板及びウエハーチャック |
JP2014011313A (ja) * | 2012-06-29 | 2014-01-20 | Kyocera Corp | 流路部材およびこれを用いた熱交換器ならびに半導体製造装置 |
JP2014082476A (ja) * | 2012-09-27 | 2014-05-08 | Kyocera Corp | 流路部材およびこれを用いた熱交換器ならびに半導体製造装置 |
WO2014084334A1 (ja) * | 2012-11-29 | 2014-06-05 | 京セラ株式会社 | 静電チャック |
JP2014175491A (ja) * | 2013-03-08 | 2014-09-22 | Nhk Spring Co Ltd | 基板支持装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000124139A (ja) * | 1998-10-15 | 2000-04-28 | Hitachi Ltd | プラズマ処理装置 |
JP2005209981A (ja) * | 2004-01-26 | 2005-08-04 | Sumitomo Electric Ind Ltd | 冷却ブロック、ヒータユニット及びそれを搭載した装置 |
JP6205225B2 (ja) | 2013-03-25 | 2017-09-27 | 東京エレクトロン株式会社 | 基板検査装置及び基板温度調整方法 |
JP6220596B2 (ja) * | 2013-08-01 | 2017-10-25 | 東京エレクトロン株式会社 | プローバ |
KR101561875B1 (ko) * | 2014-07-07 | 2015-10-30 | (주)나노테크 | 온도제어 시스템이 적용된 히터 조립체 |
-
2018
- 2018-06-05 JP JP2018108107A patent/JP7090478B2/ja active Active
-
2019
- 2019-06-03 KR KR1020190065307A patent/KR102292521B1/ko active IP Right Grant
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002124560A (ja) * | 2000-10-16 | 2002-04-26 | Sumitomo Heavy Ind Ltd | ウエハーチャック用冷却/加熱板及びウエハーチャック |
JP2014011313A (ja) * | 2012-06-29 | 2014-01-20 | Kyocera Corp | 流路部材およびこれを用いた熱交換器ならびに半導体製造装置 |
JP2014082476A (ja) * | 2012-09-27 | 2014-05-08 | Kyocera Corp | 流路部材およびこれを用いた熱交換器ならびに半導体製造装置 |
WO2014084334A1 (ja) * | 2012-11-29 | 2014-06-05 | 京セラ株式会社 | 静電チャック |
JP2014175491A (ja) * | 2013-03-08 | 2014-09-22 | Nhk Spring Co Ltd | 基板支持装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113451198A (zh) * | 2020-03-24 | 2021-09-28 | 东京毅力科创株式会社 | 基板载置台及基板处理装置 |
CN113451198B (zh) * | 2020-03-24 | 2024-04-05 | 东京毅力科创株式会社 | 基板载置台及基板处理装置 |
Also Published As
Publication number | Publication date |
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JP7090478B2 (ja) | 2022-06-24 |
KR20190138592A (ko) | 2019-12-13 |
KR102292521B1 (ko) | 2021-08-20 |
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