JP2019168328A - 半導体装置の検査方法及び半導体装置の製造方法 - Google Patents

半導体装置の検査方法及び半導体装置の製造方法 Download PDF

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Publication number
JP2019168328A
JP2019168328A JP2018056309A JP2018056309A JP2019168328A JP 2019168328 A JP2019168328 A JP 2019168328A JP 2018056309 A JP2018056309 A JP 2018056309A JP 2018056309 A JP2018056309 A JP 2018056309A JP 2019168328 A JP2019168328 A JP 2019168328A
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JP
Japan
Prior art keywords
inspection
semiconductor chip
metal member
semiconductor device
light
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Pending
Application number
JP2018056309A
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English (en)
Japanese (ja)
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JP2019168328A5 (https=
Inventor
郁夫 元永
Ikuo Motonaga
郁夫 元永
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Publication date
Application filed by Toshiba Corp, Toshiba Electronic Devices and Storage Corp filed Critical Toshiba Corp
Priority to JP2018056309A priority Critical patent/JP2019168328A/ja
Priority to US16/030,924 priority patent/US10483173B2/en
Publication of JP2019168328A publication Critical patent/JP2019168328A/ja
Publication of JP2019168328A5 publication Critical patent/JP2019168328A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/464—Additional interconnections in combination with leadframes
    • H10W70/466—Tape carriers or flat leads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/461—Leadframes specially adapted for cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/761—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
    • H10W90/766—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Length Measuring Devices By Optical Means (AREA)
JP2018056309A 2018-03-23 2018-03-23 半導体装置の検査方法及び半導体装置の製造方法 Pending JP2019168328A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2018056309A JP2019168328A (ja) 2018-03-23 2018-03-23 半導体装置の検査方法及び半導体装置の製造方法
US16/030,924 US10483173B2 (en) 2018-03-23 2018-07-10 Semiconductor device inspection method and semiconductor device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018056309A JP2019168328A (ja) 2018-03-23 2018-03-23 半導体装置の検査方法及び半導体装置の製造方法

Publications (2)

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JP2019168328A true JP2019168328A (ja) 2019-10-03
JP2019168328A5 JP2019168328A5 (https=) 2020-03-05

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JP2018056309A Pending JP2019168328A (ja) 2018-03-23 2018-03-23 半導体装置の検査方法及び半導体装置の製造方法

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US (1) US10483173B2 (https=)
JP (1) JP2019168328A (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112117251B (zh) * 2020-09-07 2022-11-25 矽磐微电子(重庆)有限公司 芯片封装结构及其制作方法
JP2023038765A (ja) * 2021-09-07 2023-03-17 株式会社東芝 検査方法、検査装置、検査システム、プログラム、及び記憶媒体
JP7700071B2 (ja) * 2022-03-19 2025-06-30 株式会社東芝 半導体装置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07139926A (ja) * 1993-11-19 1995-06-02 Hitachi Ltd 半導体装置の封止半田突起検査方法及びその実施装置
JP2002139453A (ja) * 2000-11-06 2002-05-17 Matsushita Electric Ind Co Ltd 実装検査装置および実装検査方法
JP2003532125A (ja) * 2000-04-28 2003-10-28 オラメトリックス インコーポレイテッド 表面を走査し三次元物体を作製するための方法及びシステム
JP2010112910A (ja) * 2008-11-10 2010-05-20 Nikon Corp 形状測定装置
JP2014508938A (ja) * 2011-03-10 2014-04-10 ミルテク カンパニー リミテッド 多重グリッドパターンを利用したビジョン検査装置
JP2015148481A (ja) * 2014-02-05 2015-08-20 株式会社 コアーズ Ｂｇａの平坦度計測装置およびｂｇａの平坦度計測方法
JP2016146457A (ja) * 2015-02-02 2016-08-12 株式会社東芝 半導体装置およびその製造方法
JP2016173371A (ja) * 2010-10-14 2016-09-29 コー・ヤング・テクノロジー・インコーポレーテッド 基板検査方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6411377B1 (en) * 1991-04-02 2002-06-25 Hitachi, Ltd. Optical apparatus for defect and particle size inspection
US5877859A (en) * 1996-07-24 1999-03-02 Therma-Wave, Inc. Broadband spectroscopic rotating compensator ellipsometer
JP4803568B2 (ja) * 2001-03-30 2011-10-26 ルネサスエレクトロニクス株式会社 半導体集積回路の検査装置および検査方法
JP4596422B2 (ja) 2005-05-20 2010-12-08 キヤノンマシナリー株式会社 ダイボンダ用撮像装置
FR2892188B1 (fr) 2005-10-14 2007-12-28 Nanotec Solution Soc Civ Ile Procede et dispositif de mesure de hauteurs de motifs
CN104949631B (zh) * 2014-03-27 2017-12-15 纽富来科技股份有限公司 曲率测定装置以及曲率测定方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07139926A (ja) * 1993-11-19 1995-06-02 Hitachi Ltd 半導体装置の封止半田突起検査方法及びその実施装置
JP2003532125A (ja) * 2000-04-28 2003-10-28 オラメトリックス インコーポレイテッド 表面を走査し三次元物体を作製するための方法及びシステム
JP2002139453A (ja) * 2000-11-06 2002-05-17 Matsushita Electric Ind Co Ltd 実装検査装置および実装検査方法
JP2010112910A (ja) * 2008-11-10 2010-05-20 Nikon Corp 形状測定装置
JP2016173371A (ja) * 2010-10-14 2016-09-29 コー・ヤング・テクノロジー・インコーポレーテッド 基板検査方法
JP2014508938A (ja) * 2011-03-10 2014-04-10 ミルテク カンパニー リミテッド 多重グリッドパターンを利用したビジョン検査装置
JP2015148481A (ja) * 2014-02-05 2015-08-20 株式会社 コアーズ Ｂｇａの平坦度計測装置およびｂｇａの平坦度計測方法
JP2016146457A (ja) * 2015-02-02 2016-08-12 株式会社東芝 半導体装置およびその製造方法

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US20190295901A1 (en) 2019-09-26
US10483173B2 (en) 2019-11-19

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