JP2019153613A5 - - Google Patents
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- Publication number
- JP2019153613A5 JP2019153613A5 JP2018035555A JP2018035555A JP2019153613A5 JP 2019153613 A5 JP2019153613 A5 JP 2019153613A5 JP 2018035555 A JP2018035555 A JP 2018035555A JP 2018035555 A JP2018035555 A JP 2018035555A JP 2019153613 A5 JP2019153613 A5 JP 2019153613A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- oxide
- semiconductor device
- insulator
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims 13
- 239000012212 insulator Substances 0.000 claims 11
- 239000002019 doping agent Substances 0.000 claims 8
- 238000000034 method Methods 0.000 claims 8
- 239000004020 conductor Substances 0.000 claims 7
- 238000004519 manufacturing process Methods 0.000 claims 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 3
- 229910052796 boron Inorganic materials 0.000 claims 3
- 229910052698 phosphorus Inorganic materials 0.000 claims 3
- 239000011574 phosphorus Substances 0.000 claims 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 206010021143 Hypoxia Diseases 0.000 claims 1
- 238000004380 ashing Methods 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018035555A JP7071841B2 (ja) | 2018-02-28 | 2018-02-28 | 半導体装置、および半導体装置の作製方法 |
| JP2022076966A JP7372388B2 (ja) | 2018-02-28 | 2022-05-09 | 半導体装置及びその作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018035555A JP7071841B2 (ja) | 2018-02-28 | 2018-02-28 | 半導体装置、および半導体装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022076966A Division JP7372388B2 (ja) | 2018-02-28 | 2022-05-09 | 半導体装置及びその作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019153613A JP2019153613A (ja) | 2019-09-12 |
| JP2019153613A5 true JP2019153613A5 (enExample) | 2021-04-15 |
| JP7071841B2 JP7071841B2 (ja) | 2022-05-19 |
Family
ID=67946895
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018035555A Active JP7071841B2 (ja) | 2018-02-28 | 2018-02-28 | 半導体装置、および半導体装置の作製方法 |
| JP2022076966A Active JP7372388B2 (ja) | 2018-02-28 | 2022-05-09 | 半導体装置及びその作製方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022076966A Active JP7372388B2 (ja) | 2018-02-28 | 2022-05-09 | 半導体装置及びその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (2) | JP7071841B2 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN120113356A (zh) * | 2022-11-17 | 2025-06-06 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001044421A (ja) | 1999-07-27 | 2001-02-16 | Mitsubishi Electric Corp | Ｍｉｓｆｅｔの製造方法 |
| KR101496148B1 (ko) | 2008-05-15 | 2015-02-27 | 삼성전자주식회사 | 반도체소자 및 그 제조방법 |
| KR20130007426A (ko) | 2011-06-17 | 2013-01-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| JP2013073950A (ja) * | 2011-09-26 | 2013-04-22 | Toshiba Corp | 半導体装置の製造方法 |
| JP6402017B2 (ja) * | 2013-12-26 | 2018-10-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2016109985A (ja) * | 2014-12-09 | 2016-06-20 | 凸版印刷株式会社 | 有機膜パターンの形成方法 |
| CN107533981B (zh) | 2015-04-28 | 2020-12-15 | 夏普株式会社 | 半导体装置以及其制造方法 |
| WO2016189415A1 (ja) | 2015-05-26 | 2016-12-01 | 株式会社半導体エネルギー研究所 | 半導体装置、および電子機器 |
| JP6851166B2 (ja) * | 2015-10-12 | 2021-03-31 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| CN108473334B (zh) * | 2015-12-29 | 2021-03-12 | 株式会社半导体能源研究所 | 金属氧化物膜以及半导体装置 |
-
2018
- 2018-02-28 JP JP2018035555A patent/JP7071841B2/ja active Active
-
2022
- 2022-05-09 JP JP2022076966A patent/JP7372388B2/ja active Active
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