JP7071841B2 - 半導体装置、および半導体装置の作製方法 - Google Patents

半導体装置、および半導体装置の作製方法 Download PDF

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JP7071841B2
JP7071841B2 JP2018035555A JP2018035555A JP7071841B2 JP 7071841 B2 JP7071841 B2 JP 7071841B2 JP 2018035555 A JP2018035555 A JP 2018035555A JP 2018035555 A JP2018035555 A JP 2018035555A JP 7071841 B2 JP7071841 B2 JP 7071841B2
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oxide
insulator
region
conductor
transistor
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JP2019153613A (ja
JP2019153613A5 (enExample
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勇気 畑
克明 栃林
惇平 菅尾
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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JP2018035555A 2018-02-28 2018-02-28 半導体装置、および半導体装置の作製方法 Active JP7071841B2 (ja)

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JP2018035555A JP7071841B2 (ja) 2018-02-28 2018-02-28 半導体装置、および半導体装置の作製方法
JP2022076966A JP7372388B2 (ja) 2018-02-28 2022-05-09 半導体装置及びその作製方法

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WO2024105515A1 (ja) * 2022-11-17 2024-05-23 株式会社半導体エネルギー研究所 半導体装置、及びその作製方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001044421A (ja) 1999-07-27 2001-02-16 Mitsubishi Electric Corp Ｍｉｓｆｅｔの製造方法
JP2009278115A (ja) 2008-05-15 2009-11-26 Samsung Electronics Co Ltd トランジスタとこれを含む半導体素子及びそれらの製造方法
JP2013021315A (ja) 2011-06-17 2013-01-31 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
WO2016175086A1 (ja) 2015-04-28 2016-11-03 シャープ株式会社 半導体装置及びその製造方法
WO2016189415A1 (ja) 2015-05-26 2016-12-01 株式会社半導体エネルギー研究所 半導体装置、および電子機器

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013073950A (ja) * 2011-09-26 2013-04-22 Toshiba Corp 半導体装置の製造方法
JP6402017B2 (ja) * 2013-12-26 2018-10-10 株式会社半導体エネルギー研究所 半導体装置
JP2016109985A (ja) * 2014-12-09 2016-06-20 凸版印刷株式会社 有機膜パターンの形成方法
JP6851166B2 (ja) * 2015-10-12 2021-03-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN113105213A (zh) * 2015-12-29 2021-07-13 株式会社半导体能源研究所 金属氧化物膜以及半导体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001044421A (ja) 1999-07-27 2001-02-16 Mitsubishi Electric Corp Ｍｉｓｆｅｔの製造方法
JP2009278115A (ja) 2008-05-15 2009-11-26 Samsung Electronics Co Ltd トランジスタとこれを含む半導体素子及びそれらの製造方法
JP2013021315A (ja) 2011-06-17 2013-01-31 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
WO2016175086A1 (ja) 2015-04-28 2016-11-03 シャープ株式会社 半導体装置及びその製造方法
WO2016189415A1 (ja) 2015-05-26 2016-12-01 株式会社半導体エネルギー研究所 半導体装置、および電子機器

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JP7372388B2 (ja) 2023-10-31
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