JP2019149512A - 熱処理方法 - Google Patents
熱処理方法 Download PDFInfo
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- JP2019149512A JP2019149512A JP2018034639A JP2018034639A JP2019149512A JP 2019149512 A JP2019149512 A JP 2019149512A JP 2018034639 A JP2018034639 A JP 2018034639A JP 2018034639 A JP2018034639 A JP 2018034639A JP 2019149512 A JP2019149512 A JP 2019149512A
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- semiconductor wafer
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- heat treatment
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 127
- 238000000034 method Methods 0.000 title claims abstract description 33
- 238000012545 processing Methods 0.000 claims abstract description 132
- 239000000758 substrate Substances 0.000 claims abstract description 78
- 238000011068 loading method Methods 0.000 claims abstract description 20
- 238000002360 preparation method Methods 0.000 claims abstract description 12
- 238000012546 transfer Methods 0.000 claims description 208
- 238000001816 cooling Methods 0.000 claims description 28
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 238000003672 processing method Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 253
- 238000004904 shortening Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 254
- 229910052736 halogen Inorganic materials 0.000 description 61
- 150000002367 halogens Chemical class 0.000 description 61
- 239000007789 gas Substances 0.000 description 45
- 230000007246 mechanism Effects 0.000 description 44
- 239000010453 quartz Substances 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 239000012535 impurity Substances 0.000 description 16
- 229910052724 xenon Inorganic materials 0.000 description 13
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 11
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- 229910001873 dinitrogen Inorganic materials 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
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- 230000005611 electricity Effects 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
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- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
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- 230000001590 oxidative effect Effects 0.000 description 1
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
Description
4 ハロゲンランプハウス
5 フラッシュランプハウス
6 処理チャンバー
7 保持部
10 移載機構
11 移載アーム
12 リフトピン
65 熱処理空間
66 搬送開口部
74 サセプタ
81 ガス供給孔
100 熱処理装置
101 インデクサ部
130,140 冷却部
150 搬送ロボット
151a,151b 搬送ハンド
160 熱処理部
170 搬送チャンバー
185 ゲートバルブ
230 アライメント部
FL フラッシュランプ
HL ハロゲンランプ
W 半導体ウェハー
Claims (6)
- 基板に光を照射することによって該基板を加熱する熱処理方法であって、
チャンバー内にてサセプタに保持された第1基板にランプから光を照射して当該第1基板を加熱する加熱工程と、
前記ランプを消灯して前記第1基板を前記チャンバーから搬出することができる搬出可能温度にまで冷却する冷却工程と、
を備え、
前記第1基板が前記搬出可能温度に降温するよりも前に前記第1基板を前記チャンバーから搬出するための搬出準備動作を開始することを特徴とする熱処理方法。 - 請求項1記載の熱処理方法において、
前記搬出準備動作は、
前記チャンバーに基板を搬入出するための搬送開口部に設けられたゲートバルブを開放する工程と、
前記サセプタに対して基板の移載を行う移載アームを前記サセプタよりも外方の退避位置から前記サセプタの下方の移載動作位置に移動させるとともに、前記移載アームを上昇させて前記移載アームに立設されたリフトピンを前記サセプタよりも上方に突出させて前記第1基板を受け取る工程と、
を含むことを特徴とする熱処理方法。 - 請求項2記載の熱処理方法において、
前記チャンバーの外部に設けられた搬送ロボットの搬送ハンドが前記搬出可能温度にまで降温した前記第1基板を前記リフトピンから受け取って前記チャンバーから搬出する搬出工程をさらに備え、
前記第1基板が前記チャンバーから搬出された後も前記移載アームが前記退避位置に戻ることなく前記移載動作位置に待機することを特徴とする熱処理方法。 - 請求項3記載の熱処理方法において、
前記搬送ハンドが前記第1基板を受け取って前記搬送開口部から退出した後、停止するまでの移動期間中に前記搬送ハンドに前記第1基板が保持されているか否かを判定することを特徴とする熱処理方法。 - 請求項4記載の熱処理方法において、
前記第1基板が前記チャンバーから搬出された後、前記搬送ロボットの前記搬送ハンドが第2基板を前記搬送開口部から前記チャンバー内に搬入する搬入工程をさらに備え、
前記第2基板が前記チャンバー内に搬入されて前記第2基板に対する処理を開始した後に前記ゲートバルブを閉止することを特徴とする熱処理方法。 - 請求項5記載の熱処理方法において、
前記第2基板が前記チャンバー内に搬入されて前記チャンバーに処理ガスを供給しつつ前記ゲートバルブを閉止することを特徴とする熱処理方法。
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2003100839A (ja) * | 2001-09-26 | 2003-04-04 | Dainippon Screen Mfg Co Ltd | 基板搬送装置および熱処理装置 |
JP2014135340A (ja) * | 2013-01-09 | 2014-07-24 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2014135340A (ja) * | 2013-01-09 | 2014-07-24 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
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