JP2019121432A - セラミック装置 - Google Patents
セラミック装置 Download PDFInfo
- Publication number
- JP2019121432A JP2019121432A JP2017253369A JP2017253369A JP2019121432A JP 2019121432 A JP2019121432 A JP 2019121432A JP 2017253369 A JP2017253369 A JP 2017253369A JP 2017253369 A JP2017253369 A JP 2017253369A JP 2019121432 A JP2019121432 A JP 2019121432A
- Authority
- JP
- Japan
- Prior art keywords
- intermediate layer
- ceramic
- layer
- wire
- base layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 182
- 238000010438 heat treatment Methods 0.000 claims abstract description 44
- 239000004020 conductor Substances 0.000 claims description 89
- 239000000758 substrate Substances 0.000 claims description 22
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 9
- 239000011888 foil Substances 0.000 claims description 7
- 239000000126 substance Substances 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 216
- 239000000843 powder Substances 0.000 description 22
- 239000002994 raw material Substances 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 12
- 238000010304 firing Methods 0.000 description 11
- 239000002243 precursor Substances 0.000 description 8
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 6
- 238000013461 design Methods 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 239000011733 molybdenum Substances 0.000 description 6
- 238000000280 densification Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000000149 penetrating effect Effects 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- 239000010955 niobium Substances 0.000 description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000003870 refractory metal Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/001—Joining burned ceramic articles with other burned ceramic articles or other articles by heating directly with other burned ceramic articles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
- H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/34—Oxidic
- C04B2237/343—Alumina or aluminates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
- C04B2237/365—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
- C04B2237/368—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/62—Forming laminates or joined articles comprising holes, channels or other types of openings
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/68—Forming laminates or joining articles wherein at least one substrate contains at least two different parts of macro-size, e.g. one ceramic substrate layer containing an embedded conductor or electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/3255—Material
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Resistance Heating (AREA)
- Surface Heating Bodies (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
平面状に延在する所定のパターンを有し、前記セラミック基体に埋設された通電可能な発熱抵抗体又は電極体と、を備え、
前記中間層の上面には水平面が定められ、前記中間層の上面に沿って前記発熱抵抗体又は電極体が配置されるとともに、前記被覆層が前記発熱抵抗体又は電極体を被覆するように前記中間層上面に積層されたことを特徴とする。
セラミック焼結体からなり、少なくとも、基層、前記基層上面に積層された中間層及び前記中間層上面に積層された被覆層を備えるセラミック基体と、
前記中間層と前記被覆層との間で延在する所定のパターンを有し、前記セラミック基体に埋設された通電可能な発熱抵抗体又は電極体と、
前記中間層と前記基層との間で延在する所定の導線パターンを有し、前記発熱抵抗体又は電極体と異なる層で前記セラミック基体に埋設された導線と、を備え、
前記中間層には、前記導線から前記中間層の上面に向けて前記中間層の厚さ未満の長さで延びる少なくとも1つの接続導体がさらに設けられ、
前記基層には、前記基層の下面から前記接続導体に向けて開口する少なくとも1つの接続孔が設けられていることを特徴とする。
本発明は、上記実施形態に限定されず、種々の実施形態や変形例を取り得る。以下、本発明の複数の変形例を説明する。各実施形態において、下二桁が共通する構成要素は、特定のない限り、同一又は類似の特徴を有し、その説明を一部省略する。
110 セラミック基体
111 基層
112 中間層
113 被覆層
114 ビア
115 接続導体
116 接続孔
117 接続孔
118 接続孔
120 ヒータ線(発熱抵抗体又は電極体)
121 ヒータパターン部(所定のパターン)
122 始端部
123 終端部
130 導線
131 接続部
Claims (12)
- セラミック焼結体からなり、少なくとも、基層、前記基層上面に積層された中間層及び前記中間層上面に積層された被覆層を備えるセラミック基体と、
平面状に延在する所定のパターンを有し、前記セラミック基体に埋設された通電可能な発熱抵抗体又は電極体と、を備え、
前記中間層の上面には水平面が定められ、前記中間層の上面に沿って前記発熱抵抗体又は電極体が配置されるとともに、前記被覆層が前記発熱抵抗体又は電極体を被覆するように前記中間層上面に積層されたことを特徴とするセラミック装置。 - 前記中間層には、前記発熱抵抗体又は電極体に電気的に接続され、前記中間層の上面から下面まで延びる少なくとも1つのビアが設けられ、前記基層には、前記基層の下面から前記ビアに向けて開口する少なくとも1つの接続孔が設けられていることを特徴とする請求項1に記載のセラミック装置。
- 前記中間層と前記基層との間で平面状に延在する所定の導線パターンを有する導線をさらに備え、
前記中間層には、前記導線から前記中間層の上面に向けて前記中間層の厚さ未満の長さで延びる少なくとも1つの接続導体がさらに設けられ、
前記基層には、前記基層の下面から前記接続導体に向けて開口する少なくとも1つの接続孔が設けられていることを特徴とする請求項1又は2に記載のセラミック装置。 - 前記中間層の下面には水平面が定められ、前記中間層の下面に沿って前記導線が配置されていることを特徴とする請求項3に記載のセラミック装置。
- 前記接続導体は、丸みを帯びた上端部を有することを特徴とする請求項3又は4に記載のセラミック装置。
- 前記基層、前記中間層及び前記被覆層の各境界において、隣接する層が隙間なく密着していることを特徴とする請求項1から5のいずれか一項に記載のセラミック装置。
- 前記中間層の明度が前記基層及び前記被覆層の明度と異なることを特徴とする請求項1から6のいずれか一項に記載のセラミック装置。
- 前記発熱抵抗体又は電極体がパターン化された導体箔からなることを特徴とする請求項1から7のいずれか一項に記載のセラミック装置。
- 前記導線がパターン化された導体箔からなることを特徴とする請求項3から5のいずれか一項に記載のセラミック装置。
- セラミック焼結体からなり、少なくとも、基層、前記基層上面に積層された中間層及び前記中間層上面に積層された被覆層を備えるセラミック基体と、
前記中間層と前記被覆層との間で延在する所定のパターンを有し、前記セラミック基体に埋設された通電可能な発熱抵抗体又は電極体と、
前記中間層と前記基層との間で延在する所定の導線パターンを有し、前記発熱抵抗体又は電極体と異なる層で前記セラミック基体に埋設された導線と、を備え、
前記中間層には、前記導線から前記中間層の上面に向けて前記中間層の厚さ未満の長さで延びる少なくとも1つの接続導体がさらに設けられ、
前記基層には、前記基層の下面から前記接続導体に向けて開口する少なくとも1つの接続孔が設けられていることを特徴とするセラミック装置。 - 前記中間層には、前記発熱抵抗体又は電極体及び前記導線に電気的に接続され、前記中間層の上面から下面まで延びる少なくとも1つのビアが設けられ、前記導線が前記ビア及び前記接続導体を接続していることを特徴とする請求項10に記載のセラミック装置。
- 前記電極体は、静電チャック用電極又はRF電極であることを特徴とする請求項1から11のいずれか一項に記載のセラミック装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017253369A JP6461300B1 (ja) | 2017-12-28 | 2017-12-28 | セラミック装置 |
US16/497,698 US11643368B2 (en) | 2017-12-28 | 2018-12-25 | Ceramic device |
PCT/JP2018/047523 WO2019131611A1 (ja) | 2017-12-28 | 2018-12-25 | セラミック装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017253369A JP6461300B1 (ja) | 2017-12-28 | 2017-12-28 | セラミック装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP6461300B1 JP6461300B1 (ja) | 2019-01-30 |
JP2019121432A true JP2019121432A (ja) | 2019-07-22 |
Family
ID=65229029
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017253369A Active JP6461300B1 (ja) | 2017-12-28 | 2017-12-28 | セラミック装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US11643368B2 (ja) |
JP (1) | JP6461300B1 (ja) |
WO (1) | WO2019131611A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021515974A (ja) * | 2018-05-22 | 2021-06-24 | ワトロー エレクトリック マニュファクチュアリング カンパニー | 集積化ヒーターとその製造方法 |
US11083050B2 (en) | 2017-11-21 | 2021-08-03 | Watlow Electric Manufacturing Company | Integrated heater and method of manufacture |
US11798792B2 (en) | 2020-03-11 | 2023-10-24 | Ngk Insulators, Ltd. | Ceramic heater |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20210287929A1 (en) * | 2020-03-16 | 2021-09-16 | Applied Materials, Inc. | Heater uniformity in substrate supports |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001244320A (ja) * | 2000-02-25 | 2001-09-07 | Ibiden Co Ltd | セラミック基板およびその製造方法 |
JP2001313157A (ja) * | 2000-04-26 | 2001-11-09 | Sumitomo Osaka Cement Co Ltd | 加熱装置 |
JP2003300785A (ja) * | 2002-04-04 | 2003-10-21 | Ibiden Co Ltd | セラミック接合体およびセラミック接合体の製造方法 |
JP2005347559A (ja) * | 2004-06-03 | 2005-12-15 | Ngk Spark Plug Co Ltd | 静電チャック及びセラミック製の静電チャックの製造方法 |
JP2006196311A (ja) * | 2005-01-13 | 2006-07-27 | Toyota Central Res & Dev Lab Inc | 面状発熱体の給電端子構造 |
WO2017188189A1 (ja) * | 2016-04-28 | 2017-11-02 | 京セラ株式会社 | ヒータシステム、セラミックヒータ、プラズマ処理装置及び吸着装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001257200A (ja) * | 2000-03-13 | 2001-09-21 | Ibiden Co Ltd | 半導体製造・検査装置用セラミック基板 |
JP5341049B2 (ja) | 2010-10-29 | 2013-11-13 | 日本発條株式会社 | セラミックス焼結体の製造方法、セラミックス焼結体およびセラミックスヒータ |
-
2017
- 2017-12-28 JP JP2017253369A patent/JP6461300B1/ja active Active
-
2018
- 2018-12-25 WO PCT/JP2018/047523 patent/WO2019131611A1/ja active Application Filing
- 2018-12-25 US US16/497,698 patent/US11643368B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001244320A (ja) * | 2000-02-25 | 2001-09-07 | Ibiden Co Ltd | セラミック基板およびその製造方法 |
JP2001313157A (ja) * | 2000-04-26 | 2001-11-09 | Sumitomo Osaka Cement Co Ltd | 加熱装置 |
JP2003300785A (ja) * | 2002-04-04 | 2003-10-21 | Ibiden Co Ltd | セラミック接合体およびセラミック接合体の製造方法 |
JP2005347559A (ja) * | 2004-06-03 | 2005-12-15 | Ngk Spark Plug Co Ltd | 静電チャック及びセラミック製の静電チャックの製造方法 |
JP2006196311A (ja) * | 2005-01-13 | 2006-07-27 | Toyota Central Res & Dev Lab Inc | 面状発熱体の給電端子構造 |
WO2017188189A1 (ja) * | 2016-04-28 | 2017-11-02 | 京セラ株式会社 | ヒータシステム、セラミックヒータ、プラズマ処理装置及び吸着装置 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11083050B2 (en) | 2017-11-21 | 2021-08-03 | Watlow Electric Manufacturing Company | Integrated heater and method of manufacture |
US11751289B2 (en) | 2017-11-21 | 2023-09-05 | Watlow Electric Manufacturing Company | Integrated heater and method of manufacture |
JP2021515974A (ja) * | 2018-05-22 | 2021-06-24 | ワトロー エレクトリック マニュファクチュアリング カンパニー | 集積化ヒーターとその製造方法 |
JP7039734B2 (ja) | 2018-05-22 | 2022-03-22 | ワトロー エレクトリック マニュファクチュアリング カンパニー | 集積化ヒーターとその製造方法 |
JP2022058536A (ja) * | 2018-05-22 | 2022-04-12 | ワトロー エレクトリック マニュファクチュアリング カンパニー | 集積化ヒーターとその製造方法 |
JP7170151B2 (ja) | 2018-05-22 | 2022-11-11 | ワトロー エレクトリック マニュファクチュアリング カンパニー | 集積化ヒーターとその製造方法 |
US11798792B2 (en) | 2020-03-11 | 2023-10-24 | Ngk Insulators, Ltd. | Ceramic heater |
Also Published As
Publication number | Publication date |
---|---|
US20210107836A1 (en) | 2021-04-15 |
US11643368B2 (en) | 2023-05-09 |
WO2019131611A1 (ja) | 2019-07-04 |
JP6461300B1 (ja) | 2019-01-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2019131611A1 (ja) | セラミック装置 | |
US10354904B2 (en) | Electrostatic chuck | |
KR101416152B1 (ko) | 정전 척 | |
US6267839B1 (en) | Electrostatic chuck with improved RF power distribution | |
JP6110159B2 (ja) | 複合部材及びその製造方法 | |
US6967313B1 (en) | Hot plate and method of producing the same | |
KR20030038436A (ko) | 플라즈마 발생용 전극내장형 서셉터 및 그 제조 방법 | |
JP6325424B2 (ja) | 静電チャック | |
CN111095521B (zh) | 晶片载置台及其制法 | |
US20230030510A1 (en) | Electrostatic chuck and substrate fixing device | |
JP2005347559A (ja) | 静電チャック及びセラミック製の静電チャックの製造方法 | |
JP4858319B2 (ja) | ウェハ保持体の電極接続構造 | |
KR20040004139A (ko) | 전극 내장형 서셉터 및 그 제조 방법 | |
JP6389802B2 (ja) | 加熱装置及びその製造方法 | |
US11083050B2 (en) | Integrated heater and method of manufacture | |
JP6438352B2 (ja) | 加熱装置 | |
JP5964658B2 (ja) | 薄膜配線基板 | |
TWI821574B (zh) | 靜電吸盤加熱器及其製造方法 | |
JP3157070U (ja) | セラミックスヒーター | |
CN112740829B (zh) | 集成加热器和制造方法 | |
JP7125299B2 (ja) | 電極埋設部材及びその製造方法 | |
CN112259490A (zh) | 具有加热功能的静电吸盘及其制备方法 | |
JP6483533B2 (ja) | 試料保持具およびこれを用いたプラズマエッチング装置 | |
JP2001345372A (ja) | ウエハ支持部材及びその製造方法 | |
JP7075335B2 (ja) | 多層基板及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180105 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20180105 |
|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20180123 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180417 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180613 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180918 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181113 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20181211 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20181225 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6461300 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |