JP2019117933A - 固体撮像装置および固体撮像装置の製造方法 - Google Patents
固体撮像装置および固体撮像装置の製造方法 Download PDFInfo
- Publication number
- JP2019117933A JP2019117933A JP2019033936A JP2019033936A JP2019117933A JP 2019117933 A JP2019117933 A JP 2019117933A JP 2019033936 A JP2019033936 A JP 2019033936A JP 2019033936 A JP2019033936 A JP 2019033936A JP 2019117933 A JP2019117933 A JP 2019117933A
- Authority
- JP
- Japan
- Prior art keywords
- region
- photoelectric conversion
- state imaging
- semiconductor layer
- solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000003384 imaging method Methods 0.000 title claims abstract description 61
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000007787 solid Substances 0.000 title abstract description 5
- 238000002955 isolation Methods 0.000 claims abstract description 91
- 238000006243 chemical reaction Methods 0.000 claims abstract description 87
- 239000004065 semiconductor Substances 0.000 claims abstract description 65
- 238000003860 storage Methods 0.000 claims abstract description 36
- 239000010410 layer Substances 0.000 claims description 81
- 239000012535 impurity Substances 0.000 claims description 29
- 238000009825 accumulation Methods 0.000 claims description 11
- 239000002344 surface layer Substances 0.000 claims description 6
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- 238000012546 transfer Methods 0.000 description 23
- 238000012545 processing Methods 0.000 description 21
- 238000005468 ion implantation Methods 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 17
- 230000001629 suppression Effects 0.000 description 15
- 238000009826 distribution Methods 0.000 description 12
- 230000002093 peripheral effect Effects 0.000 description 12
- 229910052796 boron Inorganic materials 0.000 description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 7
- 230000000875 corresponding effect Effects 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 230000015654 memory Effects 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 229910015900 BF3 Inorganic materials 0.000 description 5
- 230000003321 amplification Effects 0.000 description 5
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000003199 nucleic acid amplification method Methods 0.000 description 5
- 238000012805 post-processing Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 238000012937 correction Methods 0.000 description 2
- 230000002596 correlated effect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 206010047571 Visual impairment Diseases 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000003705 background correction Methods 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
Claims (5)
- 半導体層に2次元に配置される光電変換素子と、
前記半導体層の一方の表面から他方の表面へ向けて延在して前記半導体層を前記光電変換素子毎に分離し、延在方向中途部に、前記光電変換素子における第1導電型の電荷蓄積領域へ向けて張り出す張出部を有する第2導電型の素子分離領域と
を備えることを特徴とする固体撮像装置。 - 前記張出部は、
前記電荷蓄積領域の周囲を囲む
ことを特徴とする請求項1に記載の固体撮像装置。 - 前記電荷蓄積領域は、
前記半導体層における前記一方の表面側の表層部の方が、深層部よりも第1導電型の不純物濃度が高く、
前記素子分離領域は、
前記半導体層における前記表層部と前記深層部との境界近傍の深さ位置に前記張出部を有する
ことを特徴とする請求項1または2に記載の固体撮像装置。 - 前記光電変換素子の周辺にロジック回路
を備え、
前記張出部は、
最深部の前記半導体層における深さ位置が、前記ロジック回路の第2導電型のウェル領域における最深部の深さ位置と略同一である
ことを特徴とする請求項1〜3のいずれか一つに記載の固体撮像装置。 - 第1導電型の半導体層の一方の表面から他方の表面へ向けて延在して前記第1導電型の半導体層を分離する第2導電型の素子分離領域を形成することにより、複数の光電変換素子を形成する工程と、
前記第2導電型の素子分離領域における延在方向中途部に、前記光電変換素子における第1導電型の電荷蓄積領域へ向けて張り出す第2導電型の張出部を形成する工程と
を含むことを特徴とする固体撮像装置の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019033936A JP6682674B2 (ja) | 2019-02-27 | 2019-02-27 | 固体撮像装置および固体撮像装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019033936A JP6682674B2 (ja) | 2019-02-27 | 2019-02-27 | 固体撮像装置および固体撮像装置の製造方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015177972A Division JP2017054932A (ja) | 2015-09-09 | 2015-09-09 | 固体撮像装置および固体撮像装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019117933A true JP2019117933A (ja) | 2019-07-18 |
JP6682674B2 JP6682674B2 (ja) | 2020-04-15 |
Family
ID=67304605
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019033936A Expired - Fee Related JP6682674B2 (ja) | 2019-02-27 | 2019-02-27 | 固体撮像装置および固体撮像装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP6682674B2 (ja) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61229356A (ja) * | 1985-04-03 | 1986-10-13 | Matsushita Electric Ind Co Ltd | 固体撮像装置 |
JP2000299453A (ja) * | 1999-02-09 | 2000-10-24 | Sony Corp | 固体撮像装置及びその製造方法 |
JP2004165462A (ja) * | 2002-11-14 | 2004-06-10 | Sony Corp | 固体撮像素子及びその製造方法 |
JP2008205044A (ja) * | 2007-02-16 | 2008-09-04 | Sharp Corp | 固体撮像素子および電子情報機器 |
JP2011018790A (ja) * | 2009-07-09 | 2011-01-27 | Sony Corp | 固体撮像装置とその製造方法、及び電子機器 |
JP2012164768A (ja) * | 2011-02-04 | 2012-08-30 | Toshiba Corp | 固体撮像装置 |
JP2013051327A (ja) * | 2011-08-31 | 2013-03-14 | Sony Corp | 固体撮像素子および電子機器 |
-
2019
- 2019-02-27 JP JP2019033936A patent/JP6682674B2/ja not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61229356A (ja) * | 1985-04-03 | 1986-10-13 | Matsushita Electric Ind Co Ltd | 固体撮像装置 |
JP2000299453A (ja) * | 1999-02-09 | 2000-10-24 | Sony Corp | 固体撮像装置及びその製造方法 |
JP2004165462A (ja) * | 2002-11-14 | 2004-06-10 | Sony Corp | 固体撮像素子及びその製造方法 |
JP2008205044A (ja) * | 2007-02-16 | 2008-09-04 | Sharp Corp | 固体撮像素子および電子情報機器 |
JP2011018790A (ja) * | 2009-07-09 | 2011-01-27 | Sony Corp | 固体撮像装置とその製造方法、及び電子機器 |
JP2012164768A (ja) * | 2011-02-04 | 2012-08-30 | Toshiba Corp | 固体撮像装置 |
JP2013051327A (ja) * | 2011-08-31 | 2013-03-14 | Sony Corp | 固体撮像素子および電子機器 |
Also Published As
Publication number | Publication date |
---|---|
JP6682674B2 (ja) | 2020-04-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20160218138A1 (en) | Solid-state image pickup device and method for manufacturing a solid-state image pickup device | |
JP5812692B2 (ja) | 固体撮像装置の製造方法 | |
JP6406585B2 (ja) | 撮像装置 | |
US8390043B2 (en) | Solid-state imaging device with stress-relieving silicide blocking layer and electronic apparatus comprising said solid-state device | |
US8399914B2 (en) | Method for making solid-state imaging device | |
US12021106B2 (en) | Solid-state image sensor and electronic device | |
JP2017055050A (ja) | 固体撮像装置および固体撮像装置の製造方法 | |
JP2016139660A (ja) | 固体撮像装置 | |
JP2017054890A (ja) | 固体撮像装置および固体撮像装置の製造方法 | |
TWI536553B (zh) | 固態影像感測裝置及固態影像感測裝置之製造方法 | |
US20160013228A1 (en) | Solid-state imaging device and method for manufacturing solid-state imaging device | |
TWI464867B (zh) | 固態影像拾取器件及其製造方法,以及影像拾取裝置 | |
US9741758B2 (en) | Methods of forming image sensors including deposited negative fixed charge layers on photoelectric conversion regions | |
JP2007134639A (ja) | 光電変換装置及びそれを用いた撮像素子 | |
TW201526215A (zh) | 固態影像感測裝置及固態影像感測裝置之製造方法 | |
TWI534997B (zh) | 固態攝像裝置、固態攝像裝置之製造方法以及相機模組 | |
JP2017054932A (ja) | 固体撮像装置および固体撮像装置の製造方法 | |
JP2016082067A (ja) | 固体撮像装置および固体撮像装置の製造方法 | |
JP6682674B2 (ja) | 固体撮像装置および固体撮像装置の製造方法 | |
JP6039773B2 (ja) | 固体撮像装置の製造方法 | |
JP2017045879A (ja) | 固体撮像装置および固体撮像装置の製造方法 | |
JP2019114797A (ja) | 固体撮像装置および固体撮像装置の製造方法 | |
JP2016171177A (ja) | 半導体装置および半導体装置の製造方法 | |
JP5035452B2 (ja) | 固体撮像装置 | |
JP2019117931A (ja) | 固体撮像装置および固体撮像装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190327 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190327 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200131 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200225 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200325 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6682674 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |