JP2019114635A - キャパシタ内蔵ガラス回路基板及びキャパシタ内蔵ガラス回路基板の製造方法 - Google Patents
キャパシタ内蔵ガラス回路基板及びキャパシタ内蔵ガラス回路基板の製造方法 Download PDFInfo
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- 239000004020 conductor Substances 0.000 claims abstract description 83
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
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- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
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- 238000007788 roughening Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 description 1
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000006124 Pilkington process Methods 0.000 description 1
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- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- AOWKSNWVBZGMTJ-UHFFFAOYSA-N calcium titanate Chemical compound [Ca+2].[O-][Ti]([O-])=O AOWKSNWVBZGMTJ-UHFFFAOYSA-N 0.000 description 1
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- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
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- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
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- Parts Printed On Printed Circuit Boards (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
Description
Claims (9)
- ガラス基板と、
このガラス基板に積層され、内部に導体回路層が形成された絶縁樹脂層と、
前記導体回路層の一部を下部電極とし、この下部電極上に積層形成される誘電体層と、前記誘電体層上に積層形成される上部電極層とを有するキャパシタとを備え、
前記下部電極は、前記ガラス基板と前記絶縁樹脂層の積層方向を含む平面における断面視において前記誘電体層側に凸状段差部を有し、前記凸状段差部の表面は凸状段差部以外の表面より、表面粗さが小さく形成されたキャパシタ内蔵ガラス回路基板。 - 前記キャパシタは、前記積層方向の平面視において前記導体回路層の前記凸状段差部の内側に備えられている請求項1に記載のキャパシタ内蔵ガラス回路基板。
- 前記キャパシタの前記上部電極層の下地にはシード金属層が形成され、
前記シード金属層の厚さが、前記下部電極の前記凸状段差部の段差より厚く形成されている請求項1に記載のキャパシタ内蔵ガラス回路基板。 - 前記ガラス基板には、表裏面を貫通する貫通孔が形成されている請求項1に記載のキャパシタ内蔵ガラス回路基板。
- ガラス基板表面に導体回路層を形成する工程と、前記ガラス基板に絶縁樹脂層を積層形成する工程と、前記絶縁樹脂層にビアを形成する工程を複数回繰り返す第1工程と、
前記第1工程は、前記導体回路層の一部に、誘電体層と、上部電極層とを有するキャパシタを形成する工程を含み、
前記キャパシタを形成する工程は、前記導体回路層の上に保護層を形成する工程と、前記保護層をマスクとして前記導体回路層のシード金属層を除去する工程と、前記保護層を剥離する工程と、前記導体回路層の上に下部電極、若しくは、前記誘電体層を形成する工程を含むキャパシタ内蔵ガラス回路基板の製造方法。 - 前記保護層を形成する工程は、前記ガラス基板と前記絶縁樹脂層との積層方向の平面視において前記キャパシタの形成領域位の外側まで形成する請求項5に記載のキャパシタ内蔵ガラス回路基板の製造方法。
- 前記キャパシタを形成する工程は、前記上部電極層を、前記ガラス基板と前記絶縁樹脂層との積層方向の平面視において前記保護層によって保護された導体回路層部の内側に形成する請求項5に記載のキャパシタ内蔵ガラス回路基板の製造方法。
- 前記キャパシタを形成する工程は、前記誘電体層の上部にシード金属層を形成する工程を備え、
前記シード金属層を形成する工程は、シード層の厚さが、前記保護層によって保護された導体回路層部と、保護されていない導体回路層部の段差より厚くなるように実施する請求項5に記載のキャパシタ内蔵ガラス回路基板の製造方法。 - 前記第1工程の前に、前記ガラス基板に表裏面を貫通する貫通孔を形成する工程を有する請求項5に記載のキャパシタ内蔵ガラス回路基板の製造方法。
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US20220210915A1 (en) * | 2020-12-24 | 2022-06-30 | Dongwoo Fine-Chem Co., Ltd. | Circuit board |
CN114788427A (zh) * | 2020-01-10 | 2022-07-22 | 凸版印刷株式会社 | 电路基板 |
US11430730B2 (en) | 2018-06-21 | 2022-08-30 | Dai Nippon Printing Co., Ltd. | Wiring substrate and semiconductor device |
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US11430730B2 (en) | 2018-06-21 | 2022-08-30 | Dai Nippon Printing Co., Ltd. | Wiring substrate and semiconductor device |
JP7443734B2 (ja) | 2019-11-29 | 2024-03-06 | Tdk株式会社 | 電子部品 |
CN114788427A (zh) * | 2020-01-10 | 2022-07-22 | 凸版印刷株式会社 | 电路基板 |
US20220210915A1 (en) * | 2020-12-24 | 2022-06-30 | Dongwoo Fine-Chem Co., Ltd. | Circuit board |
US11832385B2 (en) * | 2020-12-24 | 2023-11-28 | Dongwoo Fine-Chem Co., Ltd. | Circuit board |
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