JP2019102602A5 - - Google Patents

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Publication number
JP2019102602A5
JP2019102602A5 JP2017230723A JP2017230723A JP2019102602A5 JP 2019102602 A5 JP2019102602 A5 JP 2019102602A5 JP 2017230723 A JP2017230723 A JP 2017230723A JP 2017230723 A JP2017230723 A JP 2017230723A JP 2019102602 A5 JP2019102602 A5 JP 2019102602A5
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JP
Japan
Prior art keywords
source
insulating film
drain electrodes
specific example
present technology
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JP2017230723A
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English (en)
Japanese (ja)
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JP2019102602A (ja
JP6853770B2 (ja
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Priority to JP2017230723A priority Critical patent/JP6853770B2/ja
Priority claimed from JP2017230723A external-priority patent/JP6853770B2/ja
Priority to US16/174,284 priority patent/US10886411B2/en
Publication of JP2019102602A publication Critical patent/JP2019102602A/ja
Publication of JP2019102602A5 publication Critical patent/JP2019102602A5/ja
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JP2017230723A 2017-11-30 2017-11-30 半導体装置および表示装置 Active JP6853770B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2017230723A JP6853770B2 (ja) 2017-11-30 2017-11-30 半導体装置および表示装置
US16/174,284 US10886411B2 (en) 2017-11-30 2018-10-30 Semiconductor device and display unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017230723A JP6853770B2 (ja) 2017-11-30 2017-11-30 半導体装置および表示装置

Publications (3)

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JP2019102602A JP2019102602A (ja) 2019-06-24
JP2019102602A5 true JP2019102602A5 (cg-RX-API-DMAC7.html) 2019-09-26
JP6853770B2 JP6853770B2 (ja) 2021-03-31

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Family Applications (1)

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JP2017230723A Active JP6853770B2 (ja) 2017-11-30 2017-11-30 半導体装置および表示装置

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US (1) US10886411B2 (cg-RX-API-DMAC7.html)
JP (1) JP6853770B2 (cg-RX-API-DMAC7.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN210607259U (zh) 2019-12-13 2020-05-22 北京京东方技术开发有限公司 显示基板和显示装置
CN111682057B (zh) * 2020-07-07 2021-09-24 深圳市华星光电半导体显示技术有限公司 显示面板及显示面板的制备方法
US11843022B2 (en) * 2020-12-03 2023-12-12 Sharp Kabushiki Kaisha X-ray imaging panel and method of manufacturing X-ray imaging panel
US11916094B2 (en) * 2021-08-02 2024-02-27 Sharp Display Technology Corporation Photoelectric conversion panel and method for manufacturing photoelectric conversion panel

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4094179B2 (ja) * 1998-08-21 2008-06-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4472064B2 (ja) * 1998-08-31 2010-06-02 株式会社半導体エネルギー研究所 半導体装置の製造方法
JP4202502B2 (ja) * 1998-12-28 2008-12-24 株式会社半導体エネルギー研究所 半導体装置
KR101058105B1 (ko) * 2009-04-06 2011-08-24 삼성모바일디스플레이주식회사 액티브 매트릭스 기판의 제조방법 및 유기 발광 표시장치의 제조방법
KR101746198B1 (ko) * 2009-09-04 2017-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 및 전자기기
KR102143924B1 (ko) * 2013-07-12 2020-08-13 삼성디스플레이 주식회사 유기 발광 표시 장치
KR102294507B1 (ko) * 2013-09-06 2021-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102132181B1 (ko) * 2013-12-31 2020-07-10 엘지디스플레이 주식회사 유기 발광 디스플레이 장치와 이의 제조 방법
JP6523695B2 (ja) * 2014-02-05 2019-06-05 株式会社半導体エネルギー研究所 半導体装置
DE112015005339T5 (de) * 2014-11-28 2017-08-17 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung, Modul und elektronisches Gerät
KR20160086016A (ko) * 2015-01-08 2016-07-19 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 이의 제조 방법
JP6920785B2 (ja) * 2015-08-19 2021-08-18 株式会社ジャパンディスプレイ 表示装置
JP6654466B2 (ja) 2015-08-31 2020-02-26 株式会社Ｊｏｌｅｄ 半導体装置、表示装置、表示装置の製造方法および電子機器
JP6970511B2 (ja) * 2016-02-12 2021-11-24 株式会社半導体エネルギー研究所 トランジスタ
JP2017191917A (ja) * 2016-04-15 2017-10-19 株式会社Ｊｏｌｅｄ 薄膜トランジスタ基板の製造方法
JPWO2017208923A1 (ja) * 2016-05-31 2019-03-28 凸版印刷株式会社 有機薄膜トランジスタおよび画像表示装置
CN107644941A (zh) * 2016-07-22 2018-01-30 上海和辉光电有限公司 一种有机发光二极管器件的薄膜封装构件
EP3506337A4 (en) * 2016-08-23 2019-08-28 Toppan Printing Co., Ltd. ORGANIC THIN-LAYER TRANSISTOR, METHOD FOR THE PRODUCTION THEREOF AND IMAGE DISPLAY DEVICE
US20180190672A1 (en) * 2017-01-03 2018-07-05 Innolux Corporation Display device

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