JP2019091097A5 - - Google Patents
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- Publication number
- JP2019091097A5 JP2019091097A5 JP2019053222A JP2019053222A JP2019091097A5 JP 2019091097 A5 JP2019091097 A5 JP 2019091097A5 JP 2019053222 A JP2019053222 A JP 2019053222A JP 2019053222 A JP2019053222 A JP 2019053222A JP 2019091097 A5 JP2019091097 A5 JP 2019091097A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- phase inversion
- phase
- line
- blank mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 22
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 230000007423 decrease Effects 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims 13
- 239000002184 metal Substances 0.000 claims 13
- 238000005530 etching Methods 0.000 claims 7
- 229910021332 silicide Inorganic materials 0.000 claims 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 6
- 239000002131 composite material Substances 0.000 claims 6
- 230000010363 phase shift Effects 0.000 claims 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 6
- -1 silicide compound Chemical class 0.000 claims 5
- 239000010949 copper Substances 0.000 claims 4
- 239000011777 magnesium Substances 0.000 claims 4
- 239000011572 manganese Substances 0.000 claims 4
- 239000010955 niobium Substances 0.000 claims 4
- 239000011669 selenium Substances 0.000 claims 4
- 239000011734 sodium Substances 0.000 claims 4
- 239000000126 substance Substances 0.000 claims 4
- 239000010936 titanium Substances 0.000 claims 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 229910052796 boron Inorganic materials 0.000 claims 3
- 229910052750 molybdenum Inorganic materials 0.000 claims 3
- 239000011733 molybdenum Substances 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 229910052790 beryllium Inorganic materials 0.000 claims 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims 2
- 229910052793 cadmium Inorganic materials 0.000 claims 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims 2
- 239000011651 chromium Substances 0.000 claims 2
- 229910017052 cobalt Inorganic materials 0.000 claims 2
- 239000010941 cobalt Substances 0.000 claims 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 229910052735 hafnium Inorganic materials 0.000 claims 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 2
- 229910052744 lithium Inorganic materials 0.000 claims 2
- 229910052749 magnesium Inorganic materials 0.000 claims 2
- 229910052748 manganese Inorganic materials 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 229910052758 niobium Inorganic materials 0.000 claims 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 2
- 229910052763 palladium Inorganic materials 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims 2
- 229910052711 selenium Inorganic materials 0.000 claims 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 2
- 229910052708 sodium Inorganic materials 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 229910052717 sulfur Inorganic materials 0.000 claims 2
- 239000011593 sulfur Substances 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 238000002834 transmittance Methods 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 2
- 229910052727 yttrium Inorganic materials 0.000 claims 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- 229910016008 MoSiC Inorganic materials 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 238000010030 laminating Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 description 2
- 241001228709 Suruga Species 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20160031239 | 2016-03-16 | ||
| KR10-2016-0031239 | 2016-03-16 | ||
| KR10-2016-0107117 | 2016-08-23 | ||
| KR1020160107117A KR101801101B1 (ko) | 2016-03-16 | 2016-08-23 | 위상반전 블랭크 마스크 및 포토 마스크 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016224972A Division JP6626813B2 (ja) | 2016-03-16 | 2016-11-18 | 位相反転ブランクマスク及びフォトマスク |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019091097A JP2019091097A (ja) | 2019-06-13 |
| JP2019091097A5 true JP2019091097A5 (enExample) | 2019-10-31 |
| JP6876737B2 JP6876737B2 (ja) | 2021-05-26 |
Family
ID=60299307
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019053222A Active JP6876737B2 (ja) | 2016-03-16 | 2019-03-20 | 位相反転ブランクマスク及びフォトマスク |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6876737B2 (enExample) |
| KR (1) | KR101801101B1 (enExample) |
| TW (1) | TWI637231B (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6557381B1 (ja) * | 2018-05-08 | 2019-08-07 | エスアンドエス テック カンパニー リミテッド | 位相反転ブランクマスク及びフォトマスク |
| TWI847949B (zh) | 2018-11-30 | 2024-07-01 | 日商Ｈｏｙａ股份有限公司 | 光罩基底、光罩之製造方法及顯示裝置之製造方法 |
| KR102511751B1 (ko) * | 2019-11-05 | 2023-03-21 | 주식회사 에스앤에스텍 | 극자외선 리소그래피용 블랭크마스크 및 포토마스크 |
| JP7413092B2 (ja) | 2020-03-12 | 2024-01-15 | Hoya株式会社 | フォトマスクブランク、フォトマスクブランクの製造方法、フォトマスクの製造方法及び表示装置の製造方法 |
| JP7527992B2 (ja) | 2020-03-17 | 2024-08-05 | Hoya株式会社 | フォトマスクブランク、フォトマスクの製造方法及び表示装置の製造方法 |
| KR102209617B1 (ko) * | 2020-08-26 | 2021-01-28 | 에스케이씨 주식회사 | 블랭크 마스크 및 포토마스크 |
| KR102229123B1 (ko) * | 2020-08-31 | 2021-03-18 | 에스케이씨솔믹스 주식회사 | 블랭크 마스크 및 이를 이용한 포토마스크 |
| KR102587396B1 (ko) * | 2022-08-18 | 2023-10-10 | 에스케이엔펄스 주식회사 | 블랭크 마스크 및 이를 이용한 포토마스크 |
| KR20250053862A (ko) * | 2022-08-30 | 2025-04-22 | 호야 가부시키가이샤 | 반사형 마스크 블랭크, 반사형 마스크 및 그 제조 방법, 그리고 반도체 장치의 제조 방법 |
| JP2025037316A (ja) * | 2023-09-06 | 2025-03-18 | 東京エレクトロン株式会社 | 半導体装置の製造方法、及び基板 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4525893B2 (ja) * | 2003-10-24 | 2010-08-18 | 信越化学工業株式会社 | 位相シフトマスクブランク、位相シフトマスク及びパターン転写方法 |
| US8329364B2 (en) | 2008-06-25 | 2012-12-11 | Hoya Corporation | Phase shift mask blank and phase shift mask |
| KR102071721B1 (ko) * | 2010-04-09 | 2020-01-30 | 호야 가부시키가이샤 | 위상 시프트 마스크 블랭크 및 그 제조 방법, 및 위상 시프트 마스크 |
| KR101282040B1 (ko) * | 2012-07-26 | 2013-07-04 | 주식회사 에스앤에스텍 | 플랫 패널 디스플레이용 위상반전 블랭크 마스크 및 포토 마스크 |
| JP6101646B2 (ja) * | 2013-02-26 | 2017-03-22 | Hoya株式会社 | 位相シフトマスクブランク及びその製造方法、位相シフトマスク及びその製造方法、並びに表示装置の製造方法 |
| JP6396118B2 (ja) * | 2014-08-20 | 2018-09-26 | Hoya株式会社 | 位相シフトマスクブランク及びその製造方法、並びに位相シフトマスクの製造方法 |
-
2016
- 2016-08-23 KR KR1020160107117A patent/KR101801101B1/ko active Active
- 2016-12-20 TW TW105142272A patent/TWI637231B/zh active
-
2019
- 2019-03-20 JP JP2019053222A patent/JP6876737B2/ja active Active
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