JP2019087681A - 半導体チップの製造方法 - Google Patents
半導体チップの製造方法 Download PDFInfo
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- JP2019087681A JP2019087681A JP2017216084A JP2017216084A JP2019087681A JP 2019087681 A JP2019087681 A JP 2019087681A JP 2017216084 A JP2017216084 A JP 2017216084A JP 2017216084 A JP2017216084 A JP 2017216084A JP 2019087681 A JP2019087681 A JP 2019087681A
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- peeling
- semiconductor wafer
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Abstract
Description
以下に、本発明の半導体チップの製造方法(以下、単に「本発明の製造方法」という。)について説明する。本発明の製造方法は、半導体ウェハをプラズマダイシングして半導体チップを得る方法である。以下に説明するように、本発明の製造方法はフォトリソグラフィプロセスが不要であり、半導体チップないし半導体製品の製造コストを大幅に抑えることができる。
(a)表面保護テープと、表面保護テープ上に設けられたマスク材層とを有するマスク一体型表面保護テープを、半導体ウェハのパターン面側に貼り合わせ、半導体ウェハの裏面を研削し、研削した半導体ウェハの裏面にウェハ固定テープを貼り合わせ、リングフレームで支持固定する工程、
(b)マスク一体型表面保護テープから表面保護テープを剥離して、マスク材層を表面に露出させた後、マスク材層のうち、半導体ウェハのストリートに相当する部分をレーザーにより切断して半導体ウェハのストリートを開口する工程、
(c)プラズマ照射により半導体ウェハをストリートで分断して半導体チップに個片化するプラズマダイシング工程、及び、
(d)マスク材層に剥離テープを貼り合せ、剥離テープをマスク材層とともに剥離してマスク材層を除去する工程。
マスク一体型表面保護テープ3は、基材フィルム3aa上に粘着剤層3abが設けられ、さらに粘着剤層3ab上にマスク材層3bが設けられた構成を有し、パターン面2に形成された半導体素子を保護する機能を有する。即ち、後工程のウェハ薄膜化工程ではパターン面2で半導体ウェハ1を支持してウェハの裏面が研削されるために、この研削時の負荷に耐える必要がある。そのため、マスク一体型表面保護テープ3は単なるレジスト膜等とは異なり、パターン面2に形成される素子を被覆するだけの厚みがあって、その押圧抵抗は低く、また研削時のダストや研削水などの浸入が起こらないように素子を密着できるだけの密着性が高いものである。
マスク一体型表面保護テープ3のうち基材フィルム3aaはプラスチックやゴム等からなり、例えばポリエチレン、ポリプロピレン、エチレン−プロピレン共重合体、ポリブテン−1、ポリ−4−メチルペンテン−1、エチレン−酢酸ビニル共重合体、エチレン−アクリル酸共重合体、アイオノマー等のα−オレフィンの単独重合体または共重合体、あるいはこれらの混合物、ポリエチレンテレフタレート、ポリエチレンナフタレート、ポリフェニレンサルファイド、ポリエーテルイミド、ポリイミド、ポリカーボネート、ポリメチルメタクリレート、ポリウレタン、スチレン−エチレン−ブテン−もしくはペンテン系共重合体等の単体もしくは2種以上を混合させたもの、さらにこれらにこれら以外の樹脂や充填材、添加剤等が配合された樹脂組成物をその材質として挙げることができ、要求特性に応じて適宜に選ぶことができる。低密度ポリエチレンとエチレン酢酸ビニル共重合体の積層体や、ポリプロピレンとポリエチレンテレフタレートの積層体、ポリエチレンテレフタレート、ポリエチレンナフタレートは好適な材質の一つである。
粘着剤層3abは、マスク材層3bと共に、パターン面2に形成される素子の凹凸を吸収してパターン面2との密着性を高め、パターン面2を保護する役割を担う。マスク一体型表面保護テープ3をウェハ薄膜化工程(裏面研削工程)の負荷に耐えるものとするために、ウェハ薄膜化工程においては、粘着剤層3abと、マスク材層3bないし基材フィルム3aaとの密着性が高いことが好ましい。一方、ウェハ薄膜化工程後においては、基材フィルム3aaと一体となってマスク材層3bと剥離されるために、粘着剤層3abとマスク材層3bとの密着性は低いことが好ましい(剥離性が高いことが好ましい)。
マスク材層3bは、パターン面2への貼着に際し半導体素子等を傷つけにくく、また、その除去の際に半導体素子等の破損や表面への粘着剤残留を生じにくいものである。マスク材層3bとしては、好ましくは放射線、より好ましくは紫外線照射によりマスク材層3bが三次元網状化を呈し、紫外線硬化型、あるいは電子線のような電離性放射線硬化型等の放射線重合型のマスク材層3bを用いることができる。
剥離テープ16は、マスク材層3bを剥離可能であれば、その材質および構成は問わないが、例えば、基材フィルム16aは、前述した表面保護テープ3aの基材フィルム3aaと同様の物を適用可能である。また、粘着剤層16bは、前述した表面保護テープ3aの粘着剤層3abと同様の物を適用可能である。なお、前述した様に、粘着剤層16bと粘着剤層3abとは、例えば、ポリマー構成成分、モノマー種が異なる。
ウェハ固定テープ4は、半導体ウェハ1を保持し、プラズマダイシング工程にさらされても耐えうるプラズマ耐性が必要である。またピックアップ工程においては良好なピックアップ性や場合によってはエキスパンド性等も要求されるものである。こうしたウェハ固定テープ4には、上記表面保護テープ3aと同様のテープを用いることができる。また一般的にダイシングテープと称される従来のプラズマダイシング方式で利用される公知のダイシングテープを用いることができる。また、ピックアップ後のダイボンディング工程への移行を容易にするために、粘着剤層3ab上にダイボンディング用接着剤を積層したダイシングダイボンディングテープを用いることもできる。
構成単位として、ラウリルアクリレート:74mol%、アクリル酸メチル:6mol%、2-ヒドロキシエチルアクリレート:20mol%由来の構成単位を各モル比で有するアクリルポリマーA(Mw:35万、酸価:7mgKOH/g、水酸基価:60mgKOH/g)100質量部に対し、イソシアネート硬化剤(商品名:L‐45、東ソー株式会社製)を1.0質量部配合して粘着剤組成物Aを得た。
構成単位として、2−エチルヘキシルアクリレート:80mol%、アクリル酸メチル:1mol%、2-ヒドロキシエチルアクリレート:19mol%由来の構成単位を各モル比で有するアクリルポリマー100質量部に対し、分子中に光重合性の炭素−炭素二重結合とイソシアネート基を有する2−イソシアナトエチルメタクリレート(商品名:MOI、昭和電工社製)を反応させ、分子中に光重合性の炭素−炭素二重結合を有するアクリルポリマーB(Mw:75万、酸価:6mgKOH/g、水酸基価:30mgKOH/g)を得た。
構成単位として、ブチルアクリレート:60mol%、エチルアクリレート:10mol%、アクリル酸メチル:1mol%、2-ヒドロキシエチルアクリレート:29mol%由来の構成単位を各モル比で有するアクリルポリマー100質量部に対し、分子中に光重合性の炭素−炭素二重結合とイソシアネート基を有する2−イソシアナトエチルメタクリレート(商品名:MOI、昭和電工社製)を反応させ、分子中に光重合性の炭素−炭素二重結合を有するアクリルポリマーC(Mw:65万、酸価:7mgKOH/g、水酸基価:40mgKOH/g)を得た。
上記で得られたマスク一体型表面保護テープ3を用いて半導体ウェハ1を加工した。マスク材層3bに剥離テープ16を貼り付け、剥離テープ16を貼り付けた後、剥離テープ16を剥離する前に紫外線を照射して、マスク材層3bと剥離テープ16とともに剥離した。
除去方法として、酸素ガスをプラズマ化したアッシング工程を適用した以外は実施例1と同様の方法でマスク除去を行った。
各除去方法を使用したのち、半導体ウェハ1の表面を顕微鏡で観察した。ウェハ上にマスク材層3bが残っているものを「A」、それ以外のものを「C」として評価した。
マスク除去後のウェハについて、表面状態を光学顕微鏡で観察した。加工前と変化無いものをA、表面に荒れが見られたものをCとした。
2………パターン面
3………マスク一体型表面保護テープ
3a………表面保護テープ
3aa………基材フィルム
3ab………粘着剤層
3b………マスク材層
4………ウェハ固定テープ
7………チップ
12………ウェハ研削装置
13………リングフレーム
15………SF6ガスプラズマ
16………剥離テープ
16a………基材フィルム
16b………粘着剤層
17………ピン
18………コレット
S………表面
B………裏面
L………レーザー
Claims (3)
- 半導体チップの製造方法であって、
表面保護テープと、前記表面保護テープ上に設けられたマスク材層とを有するマスク一体型表面保護テープを、半導体ウェハのパターン面側に貼り合わせ、前記半導体ウェハの裏面を研削し、研削した前記半導体ウェハの裏面にウェハ固定テープを貼り合わせ、リングフレームで支持固定する工程aと、
前記マスク一体型表面保護テープから前記表面保護テープを剥離して、前記マスク材層を表面に露出させた後、前記マスク材層のうち、前記半導体ウェハのストリートに相当する部分をレーザーにより切断して前記半導体ウェハの前記ストリートを開口する工程bと、
プラズマ照射により前記半導体ウェハを前記ストリートで分断して半導体チップに個片化するプラズマダイシング工程cと、
前記マスク材層に剥離テープを貼り合せ、前記剥離テープを前記マスク材層とともに剥離して前記マスク材層を除去する工程dと、
を具備することを特徴とする半導体チップ製造方法。 - 前記剥離テープは、放射線硬化型の樹脂からなり、前記工程dにおいて、前記マスク材層に前記剥離テープを貼り合せた後、放射線を照射して前記剥離テープを硬化させた後に、前記剥離テープを前記マスク材層とともに剥離することを特徴とする請求項1記載の半導体チップ製造方法。
- 前記工程dにおける前記剥離テープと前記マスク材層との接着力は、前記工程bにおける前記表面保護テープと前記マスク材層との接着力よりも強いことを特徴とする請求項1または請求項2に記載の半導体チップ製造方法。
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KR102282587B1 (ko) | 2021-07-27 |
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TW201933452A (zh) | 2019-08-16 |
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