JP2019079858A - 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 - Google Patents
荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 Download PDFInfo
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
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- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7007—Alignment other than original with workpiece
- G03F9/7015—Reference, i.e. alignment of original or workpiece with respect to a reference not on the original or workpiece
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- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
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- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
- G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70641—Focus
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
- G03F9/7026—Focusing
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
- H01J37/3045—Object or beam position registration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/10—Lenses
- H01J2237/103—Lenses characterised by lens type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30433—System calibration
- H01J2237/30438—Registration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30455—Correction during exposure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31777—Lithography by projection
- H01J2237/31788—Lithography by projection through mask
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- Analytical Chemistry (AREA)
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Abstract
Description
10 制御部
11 制御計算機
12 ショットデータ生成部
13 描画制御部
14 ドリフト補正部
15 焦点調整部
18 記憶装置
20 ブランキング回路
22 レンズ制御回路
30 描画部
32 電子鏡筒
34 描画室
40 電子銃
41 ブランキングアパーチャ
42 第1成形アパーチャ
43 第2成形アパーチャ
44 ブランキング偏向器
45 成形偏向器
46 対物偏向器
47 照明レンズ
48 投影レンズ
49 対物レンズ
50 ステージ
52 照射位置検出器
54 マーク
56 基板
58 高さ検出器
Claims (5)
- ステージに載置された描画対象の基板に対し荷電粒子ビームを照射してパターンを描画する描画部と、
前記ステージ上に設けられたマークと、
前記マークの表面高さを検出する高さ検出器と、
前記荷電粒子ビームの焦点を、前記基板の表面高さ及び検出された前記マークの表面高さに合わせて調整する焦点調整部と、
前記マークの表面高さに焦点を合わせた前記荷電粒子ビームの照射により、前記マーク表面での前記荷電粒子ビームの照射位置を検出する照射位置検出器と、
前記照射位置検出器により検出された前記照射位置から、前記マーク表面での前記荷電粒子ビームのドリフト量を算出し、該ドリフト量に基づいて、前記基板の表面でのドリフトによる照射位置ずれを補正する補正情報を生成するドリフト補正部と、
前記補正情報を用いて、前記荷電粒子ビームの照射位置を補正する描画制御部と、
を備える荷電粒子ビーム描画装置。 - 前記焦点調整部は、対物レンズを制御して前記荷電粒子ビームの焦点位置を調整することを特徴とする請求項1に記載の荷電粒子ビーム描画装置。
- ステージ上に設けられたマークを用いて荷電粒子ビームを調整し、前記ステージ上に載置された描画対象の基板に対し前記荷電粒子ビームを照射してパターンを描画する荷電粒子ビーム描画方法であって、
前記マークの表面高さを検出する工程と、
前記マークの表面高さに前記荷電粒子ビームの焦点を合わせるように焦点を調整して前記荷電粒子ビームを照射し、前記マークの表面での前記荷電粒子ビームの照射位置を検出する工程と、
検出した前記照射位置から、前記マーク表面での前記荷電粒子ビームのドリフト量を算出する工程と、
前記ドリフト量に基づいて、前記荷電粒子ビームの照射位置を補正する工程と、
を備えることを特徴とする荷電粒子ビーム描画方法。 - 前記マークに対し前記荷電粒子ビームを照射する前に、対物レンズを用いて前記荷電粒子ビームの焦点を前記マークの表面に合わせることを特徴とする請求項3に記載の荷電粒子ビーム描画方法。
- 前記マークに対し前記荷電粒子ビームを照射した後、前記荷電粒子ビームの焦点を前記基板の表面に合わせることを特徴とする請求項3又は4に記載の荷電粒子ビーム描画方法。
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JP2017203668A JP7209462B2 (ja) | 2017-10-20 | 2017-10-20 | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
TW107133110A TWI723287B (zh) | 2017-10-20 | 2018-09-20 | 帶電粒子束描繪裝置及帶電粒子束描繪方法 |
KR1020180121791A KR102221957B1 (ko) | 2017-10-20 | 2018-10-12 | 하전 입자 빔 묘화 장치 및 하전 입자 빔 묘화 방법 |
US16/160,174 US10930469B2 (en) | 2017-10-20 | 2018-10-15 | Charged particle beam writing apparatus and charged particle beam writing method |
CN201811213408.1A CN109696805A (zh) | 2017-10-20 | 2018-10-18 | 带电粒子束描绘装置及带电粒子束描绘方法 |
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JP7484491B2 (ja) | 2020-06-25 | 2024-05-16 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置 |
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JP7241570B2 (ja) * | 2019-03-06 | 2023-03-17 | 株式会社ニューフレアテクノロジー | マルチ電子ビーム検査装置及びマルチ電子ビーム検査方法 |
JP2022144237A (ja) * | 2021-03-18 | 2022-10-03 | キオクシア株式会社 | 描画方法、原版製造方法および描画装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5998523A (ja) * | 1982-11-27 | 1984-06-06 | Nippon Telegr & Teleph Corp <Ntt> | 電子ビ−ム露光装置 |
JPH09246135A (ja) * | 1996-03-04 | 1997-09-19 | Hitachi Ltd | 荷電粒子ビーム描画装置 |
JP2012094744A (ja) * | 2010-10-28 | 2012-05-17 | Nuflare Technology Inc | ステージ装置およびこれを用いた電子ビーム描画装置 |
JP2013038297A (ja) * | 2011-08-10 | 2013-02-21 | Nuflare Technology Inc | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
JP2019079857A (ja) * | 2017-10-20 | 2019-05-23 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5757015A (en) * | 1995-06-08 | 1998-05-26 | Fujitsu Limited | Charged-particle-beam exposure device and charged-particle-beam exposure method |
JP4410871B2 (ja) * | 1999-03-25 | 2010-02-03 | キヤノン株式会社 | 荷電粒子線露光装置及び該装置を用いたデバイス製造方法 |
JP2001168013A (ja) * | 1999-12-10 | 2001-06-22 | Nec Corp | 電子線露光方法 |
JP4818501B2 (ja) | 2000-09-12 | 2011-11-16 | 三菱電機株式会社 | 電子ビーム露光装置 |
JP4151286B2 (ja) | 2002-03-14 | 2008-09-17 | 日本電気株式会社 | 重ね合わせ露光方法と露光装置 |
JP4313145B2 (ja) | 2003-10-07 | 2009-08-12 | 株式会社日立ハイテクノロジーズ | 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置 |
ATE537550T1 (de) * | 2005-07-08 | 2011-12-15 | Nexgen Semi Holding Inc | Vorrichtung und verfahren zur kontrollierten fertigung von halbleitern mittels teilchenstrahlen |
SG178791A1 (en) * | 2006-02-21 | 2012-03-29 | Nikon Corp | Pattern forming apparatus, mark detecting apparatus, exposure apparatus, pattern forming method, exposure method and device manufacturing method |
JP5203992B2 (ja) * | 2008-03-25 | 2013-06-05 | 株式会社ニューフレアテクノロジー | 電子ビーム描画装置及び電子ビーム描画方法 |
KR20110087401A (ko) * | 2010-01-26 | 2011-08-03 | 삼성전자주식회사 | 마스크리스 노광장치의 오토 포커싱 장치 및 오토 포커싱 방법 |
JP5688308B2 (ja) * | 2011-02-18 | 2015-03-25 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
JP5896775B2 (ja) * | 2012-02-16 | 2016-03-30 | 株式会社ニューフレアテクノロジー | 電子ビーム描画装置および電子ビーム描画方法 |
JP5998523B2 (ja) | 2012-02-29 | 2016-09-28 | 富士通株式会社 | 分析プログラム、分析装置及び分析方法 |
JP5945222B2 (ja) | 2012-12-20 | 2016-07-05 | 株式会社ニューフレアテクノロジー | ドリフト補正方法および描画データの作成方法 |
JP6253924B2 (ja) | 2013-09-02 | 2017-12-27 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
NL2013417A (en) * | 2013-10-02 | 2015-04-07 | Asml Netherlands Bv | Methods & apparatus for obtaining diagnostic information relating to an industrial process. |
JP2016072497A (ja) | 2014-09-30 | 2016-05-09 | 株式会社ニューフレアテクノロジー | 加速電圧ドリフトの補正方法、荷電粒子ビームのドリフト補正方法、及び荷電粒子ビーム描画装置 |
JP2016082131A (ja) | 2014-10-20 | 2016-05-16 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置、荷電粒子ビームを用いた描画方法、および荷電粒子ビーム描画でのショット補正方法 |
JP6442295B2 (ja) | 2015-01-19 | 2018-12-19 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム像の回転角測定方法、マルチ荷電粒子ビーム像の回転角調整方法、及びマルチ荷電粒子ビーム描画装置 |
JP2017107959A (ja) * | 2015-12-09 | 2017-06-15 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム装置及びマルチ荷電粒子ビーム像の形状調整方法 |
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2017
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5998523A (ja) * | 1982-11-27 | 1984-06-06 | Nippon Telegr & Teleph Corp <Ntt> | 電子ビ−ム露光装置 |
JPH09246135A (ja) * | 1996-03-04 | 1997-09-19 | Hitachi Ltd | 荷電粒子ビーム描画装置 |
JP2012094744A (ja) * | 2010-10-28 | 2012-05-17 | Nuflare Technology Inc | ステージ装置およびこれを用いた電子ビーム描画装置 |
JP2013038297A (ja) * | 2011-08-10 | 2013-02-21 | Nuflare Technology Inc | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
JP2019079857A (ja) * | 2017-10-20 | 2019-05-23 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
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KR20190044508A (ko) | 2019-04-30 |
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