JP2019069870A - 基板製造方法 - Google Patents
基板製造方法 Download PDFInfo
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- JP2019069870A JP2019069870A JP2017196005A JP2017196005A JP2019069870A JP 2019069870 A JP2019069870 A JP 2019069870A JP 2017196005 A JP2017196005 A JP 2017196005A JP 2017196005 A JP2017196005 A JP 2017196005A JP 2019069870 A JP2019069870 A JP 2019069870A
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- 239000000758 substrate Substances 0.000 title claims abstract description 151
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 239000013078 crystal Substances 0.000 claims abstract description 87
- 238000012545 processing Methods 0.000 claims abstract description 63
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims abstract description 51
- 239000000395 magnesium oxide Substances 0.000 claims abstract description 51
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims abstract description 48
- 230000001678 irradiating effect Effects 0.000 claims abstract description 7
- 238000012937 correction Methods 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000004075 alteration Effects 0.000 description 6
- 229910003460 diamond Inorganic materials 0.000 description 6
- 239000010432 diamond Substances 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000004299 exfoliation Methods 0.000 description 4
- 238000003754 machining Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- 239000000835 fiber Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000001308 synthesis method Methods 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02376—Carbon, e.g. diamond-like carbon
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/06—Joining of crystals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02598—Microstructure monocrystalline
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Power Engineering (AREA)
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- Mechanical Engineering (AREA)
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- Organic Chemistry (AREA)
- High Energy & Nuclear Physics (AREA)
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- Electromagnetism (AREA)
- Toxicology (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Laser Beam Processing (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
Description
以下、酸化マグネシウム単結晶基板から薄厚の酸化マグネシウム単結晶基板を製造する例を、添付図面を参照しつつ説明する。
本発明者は、上記実施形態で説明した剥離基板製造装置10を用い、XYステージ11上のステージ面11fに基板載置用部材12としてシリコン基板を保持させ、このシリコン基板上に単結晶基板20として酸化マグネシウム単結晶基板20u(MgO単結晶基板。以下、単に単結晶基板20uと適宜にいう)を載置して保持させた。本実験例では、レーザ光を照射する酸化マグネシウム単結晶基板20uとしては、結晶方位(100)、厚さ300μm、直径50.8mmφのものを用いた。
更に本発明者は、実験例1と同様に剥離基板製造装置10を用い、レーザ光Bの波長を1024nmにして、すなわち、レーザ機種M1(LD励起フェムト秒レーザ)を使用して、レーザ出力、ドットピッチdpおよびラインピッチlpをそれぞれパラメータとして変更して照射実験を行い、これらの関係性を評価した。照射条件および照射結果を図5〜図11に示す。
11 XYステージ
11f ステージ面
12 基板載置用部材
13 補正環
14 レーザ集光手段
15 集光レンズ
16 第1レンズ
18 第2レンズ
20 酸化マグネシウム単結晶基板(単結晶部材)
20p 剥離基板
20r 被照射面
20u 酸化マグネシウム単結晶基板(単結晶部材)
B レーザ光
E 外周部
EP 集光点
K 加工痕
LK 加工痕列
M 中央部
MP 集光点
M1 レーザ機種
M2 レーザ機種
M3 レーザ機種
dp ドットピッチ
lp ラインピッチ
Claims (9)
- レーザ光を集光するレーザ集光手段を、酸化マグネシウムの単結晶部材の被照射面上に非接触に配置する第1工程と、
前記レーザ集光手段を用い、所定の照射条件で、前記単結晶部材表面にレーザ光を照射して前記単結晶部材内部にレーザ光を集光しつつ前記レーザ集光手段と前記単結晶部材とを二次元状に相対的に移動させることにより、熱加工による加工痕を前記単結晶部材内部に一列に形成してなる加工痕列を並列に形成していく第2工程と
を備え、
前記第2工程では、加工痕同士で重なりが生じている重なり列部を前記加工痕列の少なくとも一部に形成することで前記被照射面側から面状剥離を生じさせることを特徴とする基板製造方法。 - 前記重なり列部を前記加工痕列の全部にわたって形成することを特徴とする請求項1に記載の基板製造方法。
- 前記単結晶部材として単結晶基板を用いることを特徴とする請求項1または2に記載の基板製造方法。
- 前記加工痕同士を少なくとも一部で重ならせる際、レーザ光の走査方向に少なくとも一部で重ならせることを特徴とする請求項1〜3の何れか1項に記載の基板製造方法。
- 前記走査方向を前記単結晶部材の結晶方位に沿った方向にすることを特徴とする請求項4に記載の基板製造方法。
- レーザ光として高輝度レーザ光を照射することを特徴とする請求項1〜5の何れか1項に記載の基板製造方法。
- レーザ光としてパルス幅が10ns以下のレーザ光を照射することを特徴とする請求項6に記載の基板製造方法。
- レーザ光としてパルス幅が100ps以下のレーザ光を照射することを特徴とする請求項7に記載の基板製造方法。
- レーザ光としてパルス幅が15ps以下のレーザ光を照射することを特徴とする請求項8に記載の基板製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017196005A JP6943388B2 (ja) | 2017-10-06 | 2017-10-06 | 基板製造方法 |
CN201811126804.0A CN109659225B (zh) | 2017-10-06 | 2018-09-26 | 基板制造方法 |
EP18197096.3A EP3467159B1 (en) | 2017-10-06 | 2018-09-27 | Substrate manufacturing method |
TW107134400A TWI687559B (zh) | 2017-10-06 | 2018-09-28 | 基板製造方法 |
KR1020180116849A KR102128501B1 (ko) | 2017-10-06 | 2018-10-01 | 기판 제조 방법 |
US16/149,631 US20190105739A1 (en) | 2017-10-06 | 2018-10-02 | Substrate manufacturing method |
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JP2017196005A JP6943388B2 (ja) | 2017-10-06 | 2017-10-06 | 基板製造方法 |
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JP2019069870A true JP2019069870A (ja) | 2019-05-09 |
JP6943388B2 JP6943388B2 (ja) | 2021-09-29 |
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JP2017196005A Active JP6943388B2 (ja) | 2017-10-06 | 2017-10-06 | 基板製造方法 |
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US (1) | US20190105739A1 (ja) |
EP (1) | EP3467159B1 (ja) |
JP (1) | JP6943388B2 (ja) |
KR (1) | KR102128501B1 (ja) |
CN (1) | CN109659225B (ja) |
TW (1) | TWI687559B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6795811B2 (ja) * | 2017-02-16 | 2020-12-02 | 国立大学法人埼玉大学 | 剥離基板製造方法 |
JP7121941B2 (ja) * | 2018-03-09 | 2022-08-19 | 国立大学法人埼玉大学 | 基板製造方法 |
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JP2010188385A (ja) * | 2009-02-19 | 2010-09-02 | Shin Etsu Polymer Co Ltd | 半導体ウェーハの製造方法 |
JP2011003624A (ja) * | 2009-06-17 | 2011-01-06 | Shin Etsu Polymer Co Ltd | 半導体ウェーハの製造方法及びその装置 |
JP2015119076A (ja) * | 2013-12-19 | 2015-06-25 | 信越ポリマー株式会社 | 内部加工層形成単結晶部材およびその製造方法 |
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-
2017
- 2017-10-06 JP JP2017196005A patent/JP6943388B2/ja active Active
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- 2018-09-26 CN CN201811126804.0A patent/CN109659225B/zh active Active
- 2018-09-27 EP EP18197096.3A patent/EP3467159B1/en active Active
- 2018-09-28 TW TW107134400A patent/TWI687559B/zh active
- 2018-10-01 KR KR1020180116849A patent/KR102128501B1/ko active IP Right Grant
- 2018-10-02 US US16/149,631 patent/US20190105739A1/en not_active Abandoned
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2010188385A (ja) * | 2009-02-19 | 2010-09-02 | Shin Etsu Polymer Co Ltd | 半導体ウェーハの製造方法 |
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JP2015119076A (ja) * | 2013-12-19 | 2015-06-25 | 信越ポリマー株式会社 | 内部加工層形成単結晶部材およびその製造方法 |
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CN109659225A (zh) | 2019-04-19 |
KR102128501B1 (ko) | 2020-06-30 |
KR20190039860A (ko) | 2019-04-16 |
TWI687559B (zh) | 2020-03-11 |
JP6943388B2 (ja) | 2021-09-29 |
EP3467159A1 (en) | 2019-04-10 |
CN109659225B (zh) | 2023-11-17 |
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