JP2019054244A5 - - Google Patents
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- Publication number
- JP2019054244A5 JP2019054244A5 JP2018170330A JP2018170330A JP2019054244A5 JP 2019054244 A5 JP2019054244 A5 JP 2019054244A5 JP 2018170330 A JP2018170330 A JP 2018170330A JP 2018170330 A JP2018170330 A JP 2018170330A JP 2019054244 A5 JP2019054244 A5 JP 2019054244A5
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- insulator
- transistor
- oxide
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004020 conductor Substances 0.000 claims 30
- 239000012212 insulator Substances 0.000 claims 25
- 239000004065 semiconductor Substances 0.000 claims 5
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 239000003990 capacitor Substances 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023030990A JP2023063331A (ja) | 2017-09-15 | 2023-03-01 | 半導体装置 |
| JP2025019835A JP2025065417A (ja) | 2017-09-15 | 2025-02-10 | 半導体装置 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017177386 | 2017-09-15 | ||
| JP2017177386 | 2017-09-15 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023030990A Division JP2023063331A (ja) | 2017-09-15 | 2023-03-01 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019054244A JP2019054244A (ja) | 2019-04-04 |
| JP2019054244A5 true JP2019054244A5 (enExample) | 2021-10-21 |
| JP7237498B2 JP7237498B2 (ja) | 2023-03-13 |
Family
ID=65722467
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018170330A Active JP7237498B2 (ja) | 2017-09-15 | 2018-09-12 | 半導体装置、および半導体装置の作製方法 |
| JP2023030990A Withdrawn JP2023063331A (ja) | 2017-09-15 | 2023-03-01 | 半導体装置 |
| JP2025019835A Pending JP2025065417A (ja) | 2017-09-15 | 2025-02-10 | 半導体装置 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023030990A Withdrawn JP2023063331A (ja) | 2017-09-15 | 2023-03-01 | 半導体装置 |
| JP2025019835A Pending JP2025065417A (ja) | 2017-09-15 | 2025-02-10 | 半導体装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US11296085B2 (enExample) |
| JP (3) | JP7237498B2 (enExample) |
| KR (1) | KR102597945B1 (enExample) |
| TW (2) | TWI836584B (enExample) |
| WO (1) | WO2019053558A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20210257290A1 (en) * | 2020-02-19 | 2021-08-19 | Nanya Technology Corporation | Semiconductor device with connecting structure and method for fabricating the same |
| US12080557B2 (en) * | 2021-08-30 | 2024-09-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming 2-D material semiconductor device with improved source/drain electrodes and gate dielectric |
| KR102851120B1 (ko) * | 2022-01-20 | 2025-08-28 | 삼성디스플레이 주식회사 | 표시패널 |
| WO2025163450A1 (ja) * | 2024-01-31 | 2025-08-07 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5064747B2 (ja) | 2005-09-29 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 |
| JP5078246B2 (ja) | 2005-09-29 | 2012-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
| EP1998373A3 (en) | 2005-09-29 | 2012-10-31 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
| KR102057221B1 (ko) | 2009-09-16 | 2019-12-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
| KR101943293B1 (ko) | 2009-10-16 | 2019-01-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 표시 장치 및 전자 장치 |
| KR20220153647A (ko) | 2009-10-29 | 2022-11-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR101752348B1 (ko) | 2009-10-30 | 2017-06-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| JP2011192801A (ja) | 2010-03-15 | 2011-09-29 | Elpida Memory Inc | キャパシタ素子とキャパシタ素子の製造方法および半導体装置 |
| TWI602303B (zh) | 2011-01-26 | 2017-10-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| CN103348464B (zh) | 2011-01-26 | 2016-01-13 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
| WO2012102182A1 (en) | 2011-01-26 | 2012-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5933300B2 (ja) * | 2011-03-16 | 2016-06-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US8932913B2 (en) | 2011-04-22 | 2015-01-13 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| US8916868B2 (en) | 2011-04-22 | 2014-12-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| US8809854B2 (en) | 2011-04-22 | 2014-08-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8878288B2 (en) * | 2011-04-22 | 2014-11-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9842842B2 (en) * | 2014-03-19 | 2017-12-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device and semiconductor device and electronic device having the same |
| KR102481037B1 (ko) | 2014-10-01 | 2022-12-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 배선층 및 그 제작 방법 |
| JP2016225613A (ja) * | 2015-05-26 | 2016-12-28 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の駆動方法 |
| US10424671B2 (en) | 2015-07-29 | 2019-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, circuit board, and electronic device |
| US9825177B2 (en) * | 2015-07-30 | 2017-11-21 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of a semiconductor device using multiple etching mask |
| US9741400B2 (en) * | 2015-11-05 | 2017-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, memory device, electronic device, and method for operating the semiconductor device |
| US10411013B2 (en) | 2016-01-22 | 2019-09-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and memory device |
-
2018
- 2018-09-05 US US16/645,665 patent/US11296085B2/en active Active
- 2018-09-05 KR KR1020207006762A patent/KR102597945B1/ko active Active
- 2018-09-05 WO PCT/IB2018/056756 patent/WO2019053558A1/en not_active Ceased
- 2018-09-10 TW TW111133081A patent/TWI836584B/zh active
- 2018-09-10 TW TW107131671A patent/TWI776948B/zh active
- 2018-09-12 JP JP2018170330A patent/JP7237498B2/ja active Active
-
2021
- 2021-10-29 US US17/513,982 patent/US11770939B2/en active Active
-
2023
- 2023-03-01 JP JP2023030990A patent/JP2023063331A/ja not_active Withdrawn
-
2025
- 2025-02-10 JP JP2025019835A patent/JP2025065417A/ja active Pending
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