JP2019041021A5 - - Google Patents
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- Publication number
- JP2019041021A5 JP2019041021A5 JP2017162602A JP2017162602A JP2019041021A5 JP 2019041021 A5 JP2019041021 A5 JP 2019041021A5 JP 2017162602 A JP2017162602 A JP 2017162602A JP 2017162602 A JP2017162602 A JP 2017162602A JP 2019041021 A5 JP2019041021 A5 JP 2019041021A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- processed
- trench
- film
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000007789 gas Substances 0.000 claims 38
- 238000000034 method Methods 0.000 claims 33
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims 6
- 238000005530 etching Methods 0.000 claims 4
- 239000002243 precursor Substances 0.000 claims 4
- 238000010926 purge Methods 0.000 claims 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- 125000003277 amino group Chemical group 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 125000004430 oxygen atom Chemical group O* 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017162602A JP6817168B2 (ja) | 2017-08-25 | 2017-08-25 | 被処理体を処理する方法 |
| TW107128531A TW201921432A (zh) | 2017-08-25 | 2018-08-16 | 被處理體之處理方法 |
| TW111103533A TWI801113B (zh) | 2017-08-25 | 2018-08-16 | 被處理體之處理方法及電漿處理裝置 |
| KR1020180098685A KR102632154B1 (ko) | 2017-08-25 | 2018-08-23 | 피처리체를 처리하는 방법 |
| CN202211541768.0A CN115732351B (zh) | 2017-08-25 | 2018-08-24 | 处理被处理体的方法 |
| US16/111,789 US10748766B2 (en) | 2017-08-25 | 2018-08-24 | Workpiece processing method |
| CN201810971368.0A CN109427607B (zh) | 2017-08-25 | 2018-08-24 | 处理被处理体的方法 |
| US16/925,934 US11322354B2 (en) | 2017-08-25 | 2020-07-10 | Workpiece processing method |
| US17/728,618 US11735423B2 (en) | 2017-08-25 | 2022-04-25 | Workpiece processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017162602A JP6817168B2 (ja) | 2017-08-25 | 2017-08-25 | 被処理体を処理する方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019041021A JP2019041021A (ja) | 2019-03-14 |
| JP2019041021A5 true JP2019041021A5 (https=) | 2020-06-18 |
| JP6817168B2 JP6817168B2 (ja) | 2021-01-20 |
Family
ID=65437918
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017162602A Active JP6817168B2 (ja) | 2017-08-25 | 2017-08-25 | 被処理体を処理する方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US10748766B2 (https=) |
| JP (1) | JP6817168B2 (https=) |
| KR (1) | KR102632154B1 (https=) |
| CN (2) | CN115732351B (https=) |
| TW (2) | TWI801113B (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7066565B2 (ja) * | 2018-07-27 | 2022-05-13 | 東京エレクトロン株式会社 | プラズマ処理方法およびプラズマ処理装置 |
| US10950428B1 (en) * | 2019-08-30 | 2021-03-16 | Mattson Technology, Inc. | Method for processing a workpiece |
Family Cites Families (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3267199B2 (ja) * | 1996-07-11 | 2002-03-18 | 株式会社デンソー | 半導体装置の製造方法 |
| US6620741B1 (en) * | 2002-06-10 | 2003-09-16 | Intel Corporation | Method for controlling etch bias of carbon doped oxide films |
| KR100480610B1 (ko) | 2002-08-09 | 2005-03-31 | 삼성전자주식회사 | 실리콘 산화막을 이용한 미세 패턴 형성방법 |
| US6770852B1 (en) * | 2003-02-27 | 2004-08-03 | Lam Research Corporation | Critical dimension variation compensation across a wafer by means of local wafer temperature control |
| JP2005064324A (ja) * | 2003-08-18 | 2005-03-10 | Konica Minolta Holdings Inc | 微細形状の加工方法及び光学素子 |
| JP4727171B2 (ja) * | 2003-09-29 | 2011-07-20 | 東京エレクトロン株式会社 | エッチング方法 |
| US7416676B2 (en) * | 2005-02-16 | 2008-08-26 | Tokyo Electron Limited | Plasma etching method and apparatus, control program for performing the etching method, and storage medium storing the control program |
| JP2007035777A (ja) * | 2005-07-25 | 2007-02-08 | Oki Electric Ind Co Ltd | 半導体装置の製造方法及び半導体製造装置 |
| JP4722725B2 (ja) * | 2006-02-17 | 2011-07-13 | 東京エレクトロン株式会社 | 処理方法およびプラズマエッチング方法 |
| JP4877747B2 (ja) * | 2006-03-23 | 2012-02-15 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
| CN101416293B (zh) * | 2006-03-31 | 2011-04-20 | 应用材料股份有限公司 | 用于介电膜层的阶梯覆盖与图案加载 |
| US7780865B2 (en) * | 2006-03-31 | 2010-08-24 | Applied Materials, Inc. | Method to improve the step coverage and pattern loading for dielectric films |
| JP2008041984A (ja) * | 2006-08-08 | 2008-02-21 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| JP4790649B2 (ja) * | 2007-03-16 | 2011-10-12 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| KR101073858B1 (ko) * | 2007-06-08 | 2011-10-14 | 도쿄엘렉트론가부시키가이샤 | 패터닝 방법 |
| JP2009016653A (ja) * | 2007-07-06 | 2009-01-22 | Tokyo Electron Ltd | 基板の処理方法及びコンピュータ読み取り可能な記憶媒体 |
| JP2009295729A (ja) * | 2008-06-04 | 2009-12-17 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| US20100227059A1 (en) * | 2009-03-04 | 2010-09-09 | Tokyo Electron Limited | Film deposition apparatus, film deposition method, and computer readable storage medium |
| JP5181100B2 (ja) * | 2009-04-09 | 2013-04-10 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び記憶媒体 |
| US8796048B1 (en) * | 2011-05-11 | 2014-08-05 | Suvolta, Inc. | Monitoring and measurement of thin film layers |
| US20130187159A1 (en) * | 2012-01-23 | 2013-07-25 | Infineon Technologies Ag | Integrated circuit and method of forming an integrated circuit |
| KR101909091B1 (ko) * | 2012-05-11 | 2018-10-17 | 삼성전자 주식회사 | 반도체 장치 및 그 제조 방법 |
| US8852964B2 (en) * | 2013-02-04 | 2014-10-07 | Lam Research Corporation | Controlling CD and CD uniformity with trim time and temperature on a wafer by wafer basis |
| US9768220B2 (en) * | 2014-04-15 | 2017-09-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Deep trench isolation structure for image sensors |
| JP2016031962A (ja) * | 2014-07-28 | 2016-03-07 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
| JP2016058590A (ja) * | 2014-09-11 | 2016-04-21 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
| JP6366454B2 (ja) * | 2014-10-07 | 2018-08-01 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
| US9576811B2 (en) * | 2015-01-12 | 2017-02-21 | Lam Research Corporation | Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch) |
| KR102442309B1 (ko) * | 2015-07-09 | 2022-09-13 | 삼성전자주식회사 | 소자 분리 구조의 형성 방법 |
| US9640423B2 (en) * | 2015-07-30 | 2017-05-02 | GlobalFoundries, Inc. | Integrated circuits and methods for their fabrication |
| JP6537473B2 (ja) * | 2015-10-06 | 2019-07-03 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
| US10211051B2 (en) * | 2015-11-13 | 2019-02-19 | Canon Kabushiki Kaisha | Method of reverse tone patterning |
| TWI733850B (zh) * | 2016-07-27 | 2021-07-21 | 美商應用材料股份有限公司 | 使用沉積/蝕刻技術之無接縫溝道填充 |
-
2017
- 2017-08-25 JP JP2017162602A patent/JP6817168B2/ja active Active
-
2018
- 2018-08-16 TW TW111103533A patent/TWI801113B/zh active
- 2018-08-16 TW TW107128531A patent/TW201921432A/zh unknown
- 2018-08-23 KR KR1020180098685A patent/KR102632154B1/ko active Active
- 2018-08-24 CN CN202211541768.0A patent/CN115732351B/zh active Active
- 2018-08-24 US US16/111,789 patent/US10748766B2/en active Active
- 2018-08-24 CN CN201810971368.0A patent/CN109427607B/zh active Active
-
2020
- 2020-07-10 US US16/925,934 patent/US11322354B2/en active Active
-
2022
- 2022-04-25 US US17/728,618 patent/US11735423B2/en active Active
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