TWI801113B - 被處理體之處理方法及電漿處理裝置 - Google Patents

被處理體之處理方法及電漿處理裝置 Download PDF

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Publication number
TWI801113B
TWI801113B TW111103533A TW111103533A TWI801113B TW I801113 B TWI801113 B TW I801113B TW 111103533 A TW111103533 A TW 111103533A TW 111103533 A TW111103533 A TW 111103533A TW I801113 B TWI801113 B TW I801113B
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Taiwan
Prior art keywords
processing apparatus
workpiece
processing method
plasma processing
plasma
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TW111103533A
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TW202220030A (zh
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田端雅弘
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日商東京威力科創股份有限公司
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    • H—ELECTRICITY
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    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
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    • H01J2237/3321—CVD [Chemical Vapor Deposition]
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    • H01J2237/3344—Problems associated with etching isotropy

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
TW111103533A 2017-08-25 2018-08-16 被處理體之處理方法及電漿處理裝置 TWI801113B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017162602A JP6817168B2 (ja) 2017-08-25 2017-08-25 被処理体を処理する方法
JP2017-162602 2017-08-25

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TW202220030A TW202220030A (zh) 2022-05-16
TWI801113B true TWI801113B (zh) 2023-05-01

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US (3) US10748766B2 (zh)
JP (1) JP6817168B2 (zh)
KR (1) KR102632154B1 (zh)
CN (2) CN115732351A (zh)
TW (2) TW201921432A (zh)

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Publication number Priority date Publication date Assignee Title
JP7066565B2 (ja) * 2018-07-27 2022-05-13 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
US10950428B1 (en) * 2019-08-30 2021-03-16 Mattson Technology, Inc. Method for processing a workpiece

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US20070232071A1 (en) * 2006-03-31 2007-10-04 Applied Materials, Inc. Method to improve the step coverage and pattern loading for dielectric films
US20160203995A1 (en) * 2015-01-12 2016-07-14 Lam Research Corporation Integrating atomic scale processes: ald (atomic layer deposition) and ale (atomic layer etch)
US20170033178A1 (en) * 2015-07-30 2017-02-02 GlobalFoundries, Inc. Integrated circuits and methods for their fabrication
TW201727706A (zh) * 2015-11-13 2017-08-01 佳能股份有限公司 反調圖案形成之方法

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