JP2019001997A5 - - Google Patents

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JP2019001997A5
JP2019001997A5 JP2018101052A JP2018101052A JP2019001997A5 JP 2019001997 A5 JP2019001997 A5 JP 2019001997A5 JP 2018101052 A JP2018101052 A JP 2018101052A JP 2018101052 A JP2018101052 A JP 2018101052A JP 2019001997 A5 JP2019001997 A5 JP 2019001997A5
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Japan
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euv
iodine
incorporation
atoms
section
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JP2018101052A
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Japanese (ja)
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JP2019001997A (ja
JP6913055B2 (ja
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Priority claimed from US15/623,892 external-priority patent/US10495968B2/en
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JP2018101052A 2017-06-15 2018-05-25 化学増幅型レジスト組成物のためのヨウ素含有ポリマー Active JP6913055B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/623,892 US10495968B2 (en) 2017-06-15 2017-06-15 Iodine-containing polymers for chemically amplified resist compositions
US15/623,892 2017-06-15

Publications (3)

Publication Number Publication Date
JP2019001997A JP2019001997A (ja) 2019-01-10
JP2019001997A5 true JP2019001997A5 (enExample) 2020-09-10
JP6913055B2 JP6913055B2 (ja) 2021-08-04

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JP2018101052A Active JP6913055B2 (ja) 2017-06-15 2018-05-25 化学増幅型レジスト組成物のためのヨウ素含有ポリマー

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US (2) US10495968B2 (enExample)
JP (1) JP6913055B2 (enExample)
KR (1) KR102127645B1 (enExample)
CN (1) CN109134263A (enExample)
TW (1) TWI751336B (enExample)

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TWI745445B (zh) * 2016-10-05 2021-11-11 日商東京應化工業股份有限公司 光阻組成物及光阻圖型形成方法、高分子化合物,及共聚物
JP6963979B2 (ja) * 2016-12-14 2021-11-10 住友化学株式会社 樹脂、レジスト組成物及びレジストパターンの製造方法
JP7044011B2 (ja) * 2017-09-13 2022-03-30 信越化学工業株式会社 重合性単量体、重合体、レジスト材料、及びパターン形成方法
JP7264020B2 (ja) * 2018-12-27 2023-04-25 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP7351256B2 (ja) * 2019-06-17 2023-09-27 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
TWI837443B (zh) * 2019-12-31 2024-04-01 南韓商羅門哈斯電子材料韓國公司 塗料組成物、經塗覆的基底及形成電子裝置的方法
JP7509071B2 (ja) * 2020-04-28 2024-07-02 信越化学工業株式会社 ヨウ素化芳香族カルボン酸型ペンダント基含有ポリマー、レジスト材料及びパターン形成方法
US12085855B2 (en) * 2020-04-30 2024-09-10 Taiwan Semiconductor Manufacturing Company, Ltd. Resin, photoresist composition, and method of manufacturing semiconductor device
TWI772001B (zh) 2020-04-30 2022-07-21 台灣積體電路製造股份有限公司 樹脂、光阻組成物和半導體裝置的製造方法
KR20230012474A (ko) * 2020-05-15 2023-01-26 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 화합물, (공)중합체, 조성물, 레지스트패턴 형성방법, 그리고 화합물 및 (공)중합체의 제조방법
US12510821B2 (en) 2020-05-21 2025-12-30 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist composition and method of forming photoresist pattern
JP7789494B2 (ja) * 2020-06-01 2025-12-22 住友化学株式会社 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法
TWI849314B (zh) * 2020-06-01 2024-07-21 日商住友化學股份有限公司 化合物、樹脂、抗蝕劑組成物及抗蝕劑圖案的製造方法
JP2022008152A (ja) * 2020-06-25 2022-01-13 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
US12276910B2 (en) 2020-07-15 2025-04-15 Dupont Electronic Materials International, Llc Photoresist compositions and pattern formation methods
JP7375697B2 (ja) 2020-07-17 2023-11-08 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7351268B2 (ja) 2020-07-17 2023-09-27 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7696243B2 (ja) * 2020-07-21 2025-06-20 住友化学株式会社 カルボン酸塩、カルボン酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP7728113B2 (ja) * 2020-07-21 2025-08-22 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP7691872B2 (ja) * 2020-07-28 2025-06-12 住友化学株式会社 カルボン酸塩、カルボン酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP7686481B2 (ja) * 2020-07-28 2025-06-02 住友化学株式会社 カルボン酸塩、カルボン酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP7691871B2 (ja) * 2020-07-28 2025-06-12 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP7686480B2 (ja) * 2020-07-28 2025-06-02 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
CN117377909B (zh) * 2021-08-26 2024-08-13 三井化学株式会社 防护膜、防护膜组件、曝光原版、曝光装置和防护膜的制造方法
US20230103685A1 (en) * 2021-09-30 2023-04-06 Rohm And Haas Electronic Materials Llc Iodine-containing acid cleavable compounds, polymers derived therefrom, and photoresist compositions
US12572076B2 (en) 2022-11-28 2026-03-10 Rohm And Haas Electronic Materials Korea Ltd Photoresist underlayer composition
KR20240087381A (ko) * 2022-12-12 2024-06-19 삼성전자주식회사 포토레지스트 상층막용 조성물 및 이를 이용한 패턴형성방법
JPWO2024142556A1 (enExample) * 2022-12-26 2024-07-04

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JPS617314A (ja) 1984-06-20 1986-01-14 Kureha Chem Ind Co Ltd 高屈折率レンズ
GB9410578D0 (en) 1994-05-26 1994-07-13 London Hospital Med Coll Novel (meth)acrylate monomers and denture base compositions prepared therefrom
DE4419386C2 (de) * 1994-05-30 1996-09-19 Ivoclar Ag Röntgenopake Ester und Amide iodsubstituierter Benzoesäure sowie deren Verwendung zur Herstellung von Dentalmaterialien
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JP6163438B2 (ja) 2014-02-27 2017-07-12 富士フイルム株式会社 パターン形成方法、電子デバイスの製造方法、及び、電子デバイス、並びに、感活性光線性又は感放射線性樹脂組成物、及び、レジスト膜

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