JP2018537913A - チャンネル選択フィルタを備えた高線形性WiGigベースバンドアンプ - Google Patents
チャンネル選択フィルタを備えた高線形性WiGigベースバンドアンプ Download PDFInfo
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- 238000010586 diagram Methods 0.000 description 10
- 230000006870 function Effects 0.000 description 9
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- 239000003990 capacitor Substances 0.000 description 5
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- 230000000694 effects Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
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- H03G1/00—Details of arrangements for controlling amplification
- H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
- H03G1/0035—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements
- H03G1/007—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements using FET type devices
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- H—ELECTRICITY
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/04—Frequency selective two-port networks
- H03H11/12—Frequency selective two-port networks using amplifiers with feedback
- H03H11/1217—Frequency selective two-port networks using amplifiers with feedback using a plurality of operational amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
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- H—ELECTRICITY
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- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45197—Pl types
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G5/00—Tone control or bandwidth control in amplifiers
- H03G5/16—Automatic control
- H03G5/24—Automatic control in frequency-selective amplifiers
- H03G5/28—Automatic control in frequency-selective amplifiers having semiconductor devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/04—Frequency selective two-port networks
- H03H11/12—Frequency selective two-port networks using amplifiers with feedback
- H03H11/1213—Frequency selective two-port networks using amplifiers with feedback using transistor amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/04—Frequency selective two-port networks
- H03H11/12—Frequency selective two-port networks using amplifiers with feedback
- H03H11/126—Frequency selective two-port networks using amplifiers with feedback using a single operational amplifier
- H03H11/1286—Sallen-Key biquad
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/165—A filter circuit coupled to the input of an amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/171—A filter circuit coupled to the output of an amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/69—Indexing scheme relating to amplifiers the amplifier stage being a common drain coupled MOSFET, i.e. source follower
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45372—Indexing scheme relating to differential amplifiers the AAC comprising one or more potentiometers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45374—Indexing scheme relating to differential amplifiers the AAC comprising one or more discrete resistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45412—Indexing scheme relating to differential amplifiers the CMCL comprising a folding circuit as addition circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45512—Indexing scheme relating to differential amplifiers the FBC comprising one or more capacitors, not being switched capacitors, and being coupled between the LC and the IC
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45544—Indexing scheme relating to differential amplifiers the IC comprising one or more capacitors, e.g. coupling capacitors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45594—Indexing scheme relating to differential amplifiers the IC comprising one or more resistors, which are not biasing resistor
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45686—Indexing scheme relating to differential amplifiers the LC comprising one or more potentiometers, which are not shunting potentiometers
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- H—ELECTRICITY
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- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45702—Indexing scheme relating to differential amplifiers the LC comprising two resistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H2210/00—Indexing scheme relating to details of tunable filters
- H03H2210/01—Tuned parameter of filter characteristics
- H03H2210/015—Quality factor or bandwidth
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H2210/00—Indexing scheme relating to details of tunable filters
- H03H2210/01—Tuned parameter of filter characteristics
- H03H2210/017—Amplitude, gain or attenuation
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Abstract
【選択図】図2
Description
この出願は、2015年11月17日に出願された米国仮出願第62/256,460号に対する優先権の利益を主張する。本明細書に参照されたこの参考文献および他のすべての外部の参考文献が、参照によってその全体が組み込まれる。
Claims (16)
- 回路であって、該回路は:
ユニティゲインアンプを実装するソースフォロワを含むサレンキー型フィルタと;
サレンキー型フィルタに連結されたプログラマブルゲインアンプと、を含み、該回路は、そのゲイン設定から回路の帯域幅を切り離すためにプログラマブルゲインアンプにおいてカレントミラーのコピー比率を調節してプログラマブルゲインを提供するように構成されることを特徴とする回路。 - プログラマブルゲインアンプは、差動電圧電流変換器と、カレントミラー対と、プログラマブル出力ゲインステージとを含むことを特徴とする、請求項1に記載の回路。
- ローパスフィルタ、ハイパスフィルタ、およびバンドパスフィルタのうちの少なくとも1つとして機能するように構成されることを特徴とする、請求項1に記載の回路。
- ソースフォロワは第1の回路構成において配置された第1の複数のトランジスタを含み、かつ、プログラマブルゲインアンプ内の少なくとも1つのブランチは、少なくとも第2の回路構成に配置された少なくとも第2の複数のトランジスタを含み、少なくとも第2の回路構成は第1の回路構成と同じであることを特徴とする、請求項1に記載の回路。
- 第1の複数のトランジスタと、少なくとも第2の複数のトランジスタとは、単位素子サイズおよび電流密度が同じであることを特徴とする、請求項4に記載の回路。
- 単位素子の均一な配列を含む製作配置を含むことを特徴とする、請求項1に記載の回路。
- サレンキー型フィルタにおけるアンプ中のトランジスタの作動領域に線形性が依存することを回避する方法であって、該方法は:
ユニティゲインを提供するためにサレンキー型フィルタにおけるソースフォロワを利用する工程であって、該ソースフォロワは能動素子および負荷素子を含む、工程と;
サレンキー型フィルタへの入力信号のDCレベルを選択する工程であって、プログラマブルゲインアンプとして利用されるカレントミラー対における負荷素子および素子のうちの少なくとも1つの十分なヘッドルームを確保するための工程と、を含むことを特徴とする、方法。 - プログラマブルゲインアンプは、差動電圧電流変換器と、プログラマブル出力ゲインステージと、を含むことを特徴とする、請求項7に記載の方法。
- サレンキー型フィルタはローパスフィルタと、ハイパスフィルタと、バンドパスフィルタと、のうちの少なくとも1つとして機能するように構成されることを特徴とする、請求項7に記載の方法。
- ソースフォロワは第1の回路構成において配置された第1の複数のトランジスタを含み、かつ、プログラマブルゲインアンプ内の少なくとも1つのブランチは、少なくとも第2の回路構成に配置された少なくとも第2の複数のトランジスタを含み、 少なくとも第2の回路構成は第1の回路構成と同じであることを特徴とする、請求項7に記載の方法。
- 第1の複数のトランジスタと、少なくとも第2の複数のトランジスタとは、単位素子サイズおよび電流密度が同じであることを特徴とする、請求項10に記載の方法。
- ソースフォロワおよびプログラマブルゲインアンプのそれぞれは、単位素子の均一な配列を含む製作配置を含むことを特徴とする、請求項10に記載の方法。
- 集積回路を製作する方法であって、該方法は:
単位素子の配列を含むトランジスタ配置を設計する工程であって、該トランジスタ配置はサレンキー型フィルタおよび少なくとも1つのプログラマブルゲインアンプに共通している工程と;
共通の単位素子サイズおよび電流密度を提供するために、トランジスタ配置内のトランジスタのサイズを合わせる工程と;
それぞれが前記トランジスタ配置を含むために、サレンキー型フィルタおよびプログラマブルゲインアンプの設計を生成する工程と;
設計に基づいて、サレンキー型フィルタおよびプログラマブルゲインアンプを製作する工程と、を含むことを特徴とする方法。 - コンパクトさを達成し、単位素子の均一な配列を提供するようにトランジスタ配置を設計する工程を含むことを特徴とする、請求項13に記載の方法。
- プログラマブルゲインアンプは、差動電圧電流変換器と、カレントミラー対と、プログラマブル出力ゲインステージとを含むことを特徴とする、請求項13に記載の方法。
- 集積回路は、ローパスフィルタ、ハイパスフィルタ、およびバンドパスフィルタのうちの少なくとも1つとして機能するように構成されていることを特徴とする、請求項13に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562256460P | 2015-11-17 | 2015-11-17 | |
US62/256,460 | 2015-11-17 | ||
PCT/US2016/062224 WO2017087485A1 (en) | 2015-11-17 | 2016-11-16 | High linearly wigig baseband amplifier with channel select filter |
Publications (2)
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JP2018537913A true JP2018537913A (ja) | 2018-12-20 |
JP6750901B2 JP6750901B2 (ja) | 2020-09-02 |
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JP2018524819A Active JP6750901B2 (ja) | 2015-11-17 | 2016-11-16 | チャンネル選択フィルタを備えた高線形性WiGigベースバンドアンプ |
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US (3) | US9893692B2 (ja) |
EP (1) | EP3378159B1 (ja) |
JP (1) | JP6750901B2 (ja) |
KR (2) | KR102642071B1 (ja) |
CN (2) | CN114629466A (ja) |
AU (2) | AU2016358191A1 (ja) |
CA (1) | CA3005740A1 (ja) |
HK (1) | HK1258162A1 (ja) |
WO (1) | WO2017087485A1 (ja) |
Families Citing this family (4)
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US10734958B2 (en) * | 2016-08-09 | 2020-08-04 | Mediatek Inc. | Low-voltage high-speed receiver |
TWI596895B (zh) * | 2016-12-16 | 2017-08-21 | 國立臺灣大學 | 具有超級源極隨耦器的低通濾波器及傳輸零點控制方法 |
US11736091B2 (en) | 2021-12-20 | 2023-08-22 | International Business Machines Corporation | Baseband filter for current-mode signal path |
US11777496B1 (en) | 2022-08-22 | 2023-10-03 | International Business Machines Corporation | Low voltage signal path in a radio frequency signal generator |
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- 2016-11-16 CN CN202210367782.7A patent/CN114629466A/zh active Pending
- 2016-11-16 KR KR1020187016932A patent/KR102642071B1/ko active IP Right Grant
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- 2016-11-16 CN CN201680067166.2A patent/CN108370241B/zh active Active
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Also Published As
Publication number | Publication date |
---|---|
EP3378159A1 (en) | 2018-09-26 |
AU2021202432B2 (en) | 2023-02-02 |
US20170141746A1 (en) | 2017-05-18 |
CN114629466A (zh) | 2022-06-14 |
AU2016358191A1 (en) | 2018-05-31 |
EP3378159B1 (en) | 2024-08-21 |
WO2017087485A1 (en) | 2017-05-26 |
JP6750901B2 (ja) | 2020-09-02 |
US20180097489A1 (en) | 2018-04-05 |
HK1258162A1 (zh) | 2019-11-08 |
KR102697501B1 (ko) | 2024-08-22 |
CN108370241B (zh) | 2022-04-12 |
KR20240028555A (ko) | 2024-03-05 |
CA3005740A1 (en) | 2017-05-26 |
KR102642071B1 (ko) | 2024-02-28 |
US9893692B2 (en) | 2018-02-13 |
US20190214953A1 (en) | 2019-07-11 |
EP3378159A4 (en) | 2019-11-06 |
US10277182B2 (en) | 2019-04-30 |
KR20180089430A (ko) | 2018-08-08 |
US10734957B2 (en) | 2020-08-04 |
AU2021202432A1 (en) | 2021-05-13 |
CN108370241A (zh) | 2018-08-03 |
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