JP2018534379A5 - - Google Patents
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- Publication number
- JP2018534379A5 JP2018534379A5 JP2018511641A JP2018511641A JP2018534379A5 JP 2018534379 A5 JP2018534379 A5 JP 2018534379A5 JP 2018511641 A JP2018511641 A JP 2018511641A JP 2018511641 A JP2018511641 A JP 2018511641A JP 2018534379 A5 JP2018534379 A5 JP 2018534379A5
- Authority
- JP
- Japan
- Prior art keywords
- polishing composition
- ppm
- substrate
- nonionic surfactant
- ceria
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 claims 20
- 239000000203 mixture Substances 0.000 claims 18
- 238000000034 method Methods 0.000 claims 17
- 239000000758 substrate Substances 0.000 claims 11
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims 8
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims 8
- 239000002736 nonionic surfactant Substances 0.000 claims 8
- 229920006317 cationic polymer Polymers 0.000 claims 6
- 239000000178 monomer Substances 0.000 claims 6
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims 4
- 235000001014 amino acid Nutrition 0.000 claims 4
- 150000001413 amino acids Chemical class 0.000 claims 4
- 239000002245 particle Substances 0.000 claims 4
- 239000000126 substance Substances 0.000 claims 3
- NCXUNZWLEYGQAH-UHFFFAOYSA-N 1-(dimethylamino)propan-2-ol Chemical compound CC(O)CN(C)C NCXUNZWLEYGQAH-UHFFFAOYSA-N 0.000 claims 2
- UHKIGXVNMXYBOP-UHFFFAOYSA-M 1-ethenyl-3-methylimidazol-3-ium;chloride Chemical group [Cl-].C[N+]=1C=CN(C=C)C=1 UHKIGXVNMXYBOP-UHFFFAOYSA-M 0.000 claims 2
- 239000004471 Glycine Substances 0.000 claims 2
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 claims 2
- KZSNJWFQEVHDMF-BYPYZUCNSA-N L-valine Chemical compound CC(C)[C@H](N)C(O)=O KZSNJWFQEVHDMF-BYPYZUCNSA-N 0.000 claims 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims 2
- 239000002202 Polyethylene glycol Substances 0.000 claims 2
- 239000004372 Polyvinyl alcohol Substances 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- KZSNJWFQEVHDMF-UHFFFAOYSA-N Valine Natural products CC(C)C(N)C(O)=O KZSNJWFQEVHDMF-UHFFFAOYSA-N 0.000 claims 2
- 235000004279 alanine Nutrition 0.000 claims 2
- 150000005215 alkyl ethers Chemical class 0.000 claims 2
- 125000003277 amino group Chemical group 0.000 claims 2
- 125000002603 chloroethyl group Chemical group [H]C([*])([H])C([H])([H])Cl 0.000 claims 2
- YIOJGTBNHQAVBO-UHFFFAOYSA-N dimethyl-bis(prop-2-enyl)azanium Chemical compound C=CC[N+](C)(C)CC=C YIOJGTBNHQAVBO-UHFFFAOYSA-N 0.000 claims 2
- TWNIBLMWSKIRAT-VFUOTHLCSA-N levoglucosan Chemical group O[C@@H]1[C@@H](O)[C@H](O)[C@H]2CO[C@@H]1O2 TWNIBLMWSKIRAT-VFUOTHLCSA-N 0.000 claims 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 2
- 229920001223 polyethylene glycol Polymers 0.000 claims 2
- 229920001451 polypropylene glycol Polymers 0.000 claims 2
- 229920005591 polysilicon Polymers 0.000 claims 2
- 229920002451 polyvinyl alcohol Polymers 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- USFMMZYROHDWPJ-UHFFFAOYSA-N trimethyl-[2-(2-methylprop-2-enoyloxy)ethyl]azanium Chemical compound CC(=C)C(=O)OCC[N+](C)(C)C USFMMZYROHDWPJ-UHFFFAOYSA-N 0.000 claims 2
- 239000004474 valine Substances 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 2
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/849,066 | 2015-09-06 | ||
| US14/849,066 US9597768B1 (en) | 2015-09-09 | 2015-09-09 | Selective nitride slurries with improved stability and improved polishing characteristics |
| PCT/US2016/049299 WO2017044340A1 (en) | 2015-09-09 | 2016-08-29 | Selective nitride slurries with improved stability and improved polishing characteristics |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018534379A JP2018534379A (ja) | 2018-11-22 |
| JP2018534379A5 true JP2018534379A5 (enExample) | 2019-09-19 |
| JP7021073B2 JP7021073B2 (ja) | 2022-02-16 |
Family
ID=58189972
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018511641A Active JP7021073B2 (ja) | 2015-09-09 | 2016-08-29 | 改善された安定性及び改善された研磨特性を有する、選択的窒化物スラリー |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9597768B1 (enExample) |
| EP (1) | EP3347428B1 (enExample) |
| JP (1) | JP7021073B2 (enExample) |
| KR (1) | KR102650526B1 (enExample) |
| CN (1) | CN108026432B (enExample) |
| TW (1) | TWI646184B (enExample) |
| WO (1) | WO2017044340A1 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109251675B (zh) * | 2017-07-13 | 2021-07-30 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光液 |
| JP7002354B2 (ja) * | 2018-01-29 | 2022-02-04 | ニッタ・デュポン株式会社 | 研磨用組成物 |
| US10584266B2 (en) * | 2018-03-14 | 2020-03-10 | Cabot Microelectronics Corporation | CMP compositions containing polymer complexes and agents for STI applications |
| US12227673B2 (en) | 2018-12-04 | 2025-02-18 | Cmc Materials Llc | Composition and method for silicon nitride CMP |
| KR20220090534A (ko) * | 2019-10-22 | 2022-06-29 | 씨엠씨 머티리얼즈, 인코포레이티드 | 유전체 cmp를 위한 조성물 및 방법 |
| KR20220087492A (ko) * | 2019-10-22 | 2022-06-24 | 씨엠씨 머티리얼즈, 인코포레이티드 | 실리콘 산화물보다 실리콘 질화물 및 폴리실리콘에 대해 높은 선택성을 갖는 연마 조성물 및 방법 |
| KR102290191B1 (ko) * | 2019-12-06 | 2021-08-19 | 주식회사 케이씨텍 | Sti cmp 공정용 연마 슬러리 조성물 및 이의 제조방법 |
| US20230094224A1 (en) * | 2020-01-16 | 2023-03-30 | Showa Denko Materials Co., Ltd. | Polishing agent, stock solution for polishing agent, and polishing method |
| JP7716857B2 (ja) * | 2020-03-23 | 2025-08-01 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP7569717B2 (ja) * | 2021-03-09 | 2024-10-18 | 花王株式会社 | 酸化珪素膜用研磨液組成物 |
| US20230242790A1 (en) * | 2022-02-03 | 2023-08-03 | Cmc Materials, Inc. | Ceria-based slurry compositions for selective and nonselective cmp of silicon oxide, silicon nitride, and polysilicon |
| KR20250066152A (ko) * | 2023-11-06 | 2025-05-13 | 에스케이엔펄스 주식회사 | 반도체 공정용 연마 조성물 및 이를 이용한 기판의 제조방법 |
| CN119592231B (zh) * | 2024-12-25 | 2025-09-30 | 河北工业大学 | 一种基于氧化铈磨料的氧化硅/氮化硅酸性抛光液及其制备方法 |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6540935B2 (en) | 2001-04-05 | 2003-04-01 | Samsung Electronics Co., Ltd. | Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same |
| CN1333444C (zh) * | 2002-11-12 | 2007-08-22 | 阿科玛股份有限公司 | 使用磺化两性试剂的铜化学机械抛光溶液 |
| KR20060016498A (ko) * | 2004-08-18 | 2006-02-22 | 삼성전자주식회사 | 슬러리 조성물, 이의 제조 방법 및 이를 이용한 가공물의연마방법 |
| US7531105B2 (en) * | 2004-11-05 | 2009-05-12 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
| US20060096179A1 (en) | 2004-11-05 | 2006-05-11 | Cabot Microelectronics Corporation | CMP composition containing surface-modified abrasive particles |
| US7504044B2 (en) * | 2004-11-05 | 2009-03-17 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
| US20070077865A1 (en) * | 2005-10-04 | 2007-04-05 | Cabot Microelectronics Corporation | Method for controlling polysilicon removal |
| US7897061B2 (en) * | 2006-02-01 | 2011-03-01 | Cabot Microelectronics Corporation | Compositions and methods for CMP of phase change alloys |
| JP2008004621A (ja) * | 2006-06-20 | 2008-01-10 | Toshiba Corp | Ｃｕ膜ＣＭＰ用スラリー、研磨方法および半導体装置の製造方法 |
| JP2008277723A (ja) * | 2007-03-30 | 2008-11-13 | Fujifilm Corp | 金属用研磨液及び研磨方法 |
| CN101802125B (zh) * | 2007-09-21 | 2013-11-06 | 卡伯特微电子公司 | 使用经氨基硅烷处理的研磨剂颗粒的抛光组合物和方法 |
| JP5403924B2 (ja) * | 2008-02-29 | 2014-01-29 | 富士フイルム株式会社 | 金属用研磨液、および化学的機械的研磨方法 |
| WO2012032467A1 (en) * | 2010-09-08 | 2012-03-15 | Basf Se | Process for chemically mechanically polishing substrates containing silicon oxide dielectric films and polysilicon and/or silicon nitride films |
| KR101919750B1 (ko) * | 2010-12-10 | 2018-11-19 | 바스프 에스이 | 산화규소 유전체 및 폴리실리콘 필름을 함유하는 기판의 화학적 기계적 연마를 위한 수성 연마 조성물 및 방법 |
| US8808573B2 (en) * | 2011-04-15 | 2014-08-19 | Cabot Microelectronics Corporation | Compositions and methods for selective polishing of silicon nitride materials |
| JP2013074036A (ja) * | 2011-09-27 | 2013-04-22 | Toshiba Corp | Ｃｍｐ用スラリーおよび半導体装置の製造方法 |
| TWI573864B (zh) * | 2012-03-14 | 2017-03-11 | 卡博特微電子公司 | 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之ｃｍｐ組成物 |
| US9633863B2 (en) * | 2012-07-11 | 2017-04-25 | Cabot Microelectronics Corporation | Compositions and methods for selective polishing of silicon nitride materials |
| US8778211B2 (en) * | 2012-07-17 | 2014-07-15 | Cabot Microelectronics Corporation | GST CMP slurries |
| KR101427883B1 (ko) * | 2013-02-08 | 2014-08-07 | 주식회사 케이씨텍 | 표면 개질된 연마입자, 그의 제조 방법 및 그를 포함하는 슬러리 조성물 |
| US8906252B1 (en) * | 2013-05-21 | 2014-12-09 | Cabot Microelelctronics Corporation | CMP compositions selective for oxide and nitride with high removal rate and low defectivity |
| US8974692B2 (en) * | 2013-06-27 | 2015-03-10 | Air Products And Chemicals, Inc. | Chemical mechanical polishing slurry compositions and method using the same for copper and through-silicon via applications |
| US9303187B2 (en) | 2013-07-22 | 2016-04-05 | Cabot Microelectronics Corporation | Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials |
| US9850402B2 (en) | 2013-12-09 | 2017-12-26 | Cabot Microelectronics Corporation | CMP compositions and methods for selective removal of silicon nitride |
| TWI530557B (zh) * | 2014-05-29 | 2016-04-21 | 卡博特微電子公司 | 具高移除速率及低缺陷率之對氧化物與多晶矽及氮化物具有選擇性的ｃｍｐ組合物 |
| US20160053381A1 (en) * | 2014-08-22 | 2016-02-25 | Cabot Microelectronics Corporation | Germanium chemical mechanical polishing |
| US9505952B2 (en) * | 2015-03-05 | 2016-11-29 | Cabot Microelectronics Corporation | Polishing composition containing ceria abrasive |
-
2015
- 2015-09-09 US US14/849,066 patent/US9597768B1/en active Active
-
2016
- 2016-08-29 JP JP2018511641A patent/JP7021073B2/ja active Active
- 2016-08-29 WO PCT/US2016/049299 patent/WO2017044340A1/en not_active Ceased
- 2016-08-29 EP EP16844893.4A patent/EP3347428B1/en active Active
- 2016-08-29 TW TW105127671A patent/TWI646184B/zh active
- 2016-08-29 CN CN201680052336.XA patent/CN108026432B/zh active Active
- 2016-08-29 KR KR1020187009503A patent/KR102650526B1/ko active Active
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