CN108026432B - 具有改善的稳定性和改善的抛光特性的选择性氮化物淤浆 - Google Patents
具有改善的稳定性和改善的抛光特性的选择性氮化物淤浆 Download PDFInfo
- Publication number
- CN108026432B CN108026432B CN201680052336.XA CN201680052336A CN108026432B CN 108026432 B CN108026432 B CN 108026432B CN 201680052336 A CN201680052336 A CN 201680052336A CN 108026432 B CN108026432 B CN 108026432B
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- China
- Prior art keywords
- polishing composition
- mol
- polishing
- substrate
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/221—Oxides; Hydroxides of metals of rare earth metal
- C08K2003/2213—Oxides; Hydroxides of metals of rare earth metal of cerium
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Dispersion Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/849,066 | 2015-09-06 | ||
| US14/849,066 US9597768B1 (en) | 2015-09-09 | 2015-09-09 | Selective nitride slurries with improved stability and improved polishing characteristics |
| PCT/US2016/049299 WO2017044340A1 (en) | 2015-09-09 | 2016-08-29 | Selective nitride slurries with improved stability and improved polishing characteristics |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108026432A CN108026432A (zh) | 2018-05-11 |
| CN108026432B true CN108026432B (zh) | 2022-06-14 |
Family
ID=58189972
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201680052336.XA Active CN108026432B (zh) | 2015-09-09 | 2016-08-29 | 具有改善的稳定性和改善的抛光特性的选择性氮化物淤浆 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9597768B1 (enExample) |
| EP (1) | EP3347428B1 (enExample) |
| JP (1) | JP7021073B2 (enExample) |
| KR (1) | KR102650526B1 (enExample) |
| CN (1) | CN108026432B (enExample) |
| TW (1) | TWI646184B (enExample) |
| WO (1) | WO2017044340A1 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109251675B (zh) * | 2017-07-13 | 2021-07-30 | 安集微电子科技(上海)股份有限公司 | 一种化学机械抛光液 |
| JP7002354B2 (ja) * | 2018-01-29 | 2022-02-04 | ニッタ・デュポン株式会社 | 研磨用組成物 |
| US10584266B2 (en) * | 2018-03-14 | 2020-03-10 | Cabot Microelectronics Corporation | CMP compositions containing polymer complexes and agents for STI applications |
| US12227673B2 (en) | 2018-12-04 | 2025-02-18 | Cmc Materials Llc | Composition and method for silicon nitride CMP |
| KR20220090534A (ko) * | 2019-10-22 | 2022-06-29 | 씨엠씨 머티리얼즈, 인코포레이티드 | 유전체 cmp를 위한 조성물 및 방법 |
| KR20220087492A (ko) * | 2019-10-22 | 2022-06-24 | 씨엠씨 머티리얼즈, 인코포레이티드 | 실리콘 산화물보다 실리콘 질화물 및 폴리실리콘에 대해 높은 선택성을 갖는 연마 조성물 및 방법 |
| KR102290191B1 (ko) * | 2019-12-06 | 2021-08-19 | 주식회사 케이씨텍 | Sti cmp 공정용 연마 슬러리 조성물 및 이의 제조방법 |
| US20230094224A1 (en) * | 2020-01-16 | 2023-03-30 | Showa Denko Materials Co., Ltd. | Polishing agent, stock solution for polishing agent, and polishing method |
| JP7716857B2 (ja) * | 2020-03-23 | 2025-08-01 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP7569717B2 (ja) * | 2021-03-09 | 2024-10-18 | 花王株式会社 | 酸化珪素膜用研磨液組成物 |
| US20230242790A1 (en) * | 2022-02-03 | 2023-08-03 | Cmc Materials, Inc. | Ceria-based slurry compositions for selective and nonselective cmp of silicon oxide, silicon nitride, and polysilicon |
| KR20250066152A (ko) * | 2023-11-06 | 2025-05-13 | 에스케이엔펄스 주식회사 | 반도체 공정용 연마 조성물 및 이를 이용한 기판의 제조방법 |
| CN119592231B (zh) * | 2024-12-25 | 2025-09-30 | 河北工业大学 | 一种基于氧化铈磨料的氧化硅/氮化硅酸性抛光液及其制备方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101065458A (zh) * | 2004-11-05 | 2007-10-31 | 卡伯特微电子公司 | 用于高的氮化硅对氧化硅去除速率比率的抛光组合物及方法 |
| KR101427883B1 (ko) * | 2013-02-08 | 2014-08-07 | 주식회사 케이씨텍 | 표면 개질된 연마입자, 그의 제조 방법 및 그를 포함하는 슬러리 조성물 |
| CN104284960A (zh) * | 2012-03-14 | 2015-01-14 | 嘉柏微电子材料股份公司 | 具有高移除速率和低缺陷率的对氧化物和氮化物有选择性的cmp组合物 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6540935B2 (en) | 2001-04-05 | 2003-04-01 | Samsung Electronics Co., Ltd. | Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same |
| CN1333444C (zh) * | 2002-11-12 | 2007-08-22 | 阿科玛股份有限公司 | 使用磺化两性试剂的铜化学机械抛光溶液 |
| KR20060016498A (ko) * | 2004-08-18 | 2006-02-22 | 삼성전자주식회사 | 슬러리 조성물, 이의 제조 방법 및 이를 이용한 가공물의연마방법 |
| US7531105B2 (en) * | 2004-11-05 | 2009-05-12 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
| US20060096179A1 (en) | 2004-11-05 | 2006-05-11 | Cabot Microelectronics Corporation | CMP composition containing surface-modified abrasive particles |
| US20070077865A1 (en) * | 2005-10-04 | 2007-04-05 | Cabot Microelectronics Corporation | Method for controlling polysilicon removal |
| US7897061B2 (en) * | 2006-02-01 | 2011-03-01 | Cabot Microelectronics Corporation | Compositions and methods for CMP of phase change alloys |
| JP2008004621A (ja) * | 2006-06-20 | 2008-01-10 | Toshiba Corp | Cu膜CMP用スラリー、研磨方法および半導体装置の製造方法 |
| JP2008277723A (ja) * | 2007-03-30 | 2008-11-13 | Fujifilm Corp | 金属用研磨液及び研磨方法 |
| CN101802125B (zh) * | 2007-09-21 | 2013-11-06 | 卡伯特微电子公司 | 使用经氨基硅烷处理的研磨剂颗粒的抛光组合物和方法 |
| JP5403924B2 (ja) * | 2008-02-29 | 2014-01-29 | 富士フイルム株式会社 | 金属用研磨液、および化学的機械的研磨方法 |
| WO2012032467A1 (en) * | 2010-09-08 | 2012-03-15 | Basf Se | Process for chemically mechanically polishing substrates containing silicon oxide dielectric films and polysilicon and/or silicon nitride films |
| KR101919750B1 (ko) * | 2010-12-10 | 2018-11-19 | 바스프 에스이 | 산화규소 유전체 및 폴리실리콘 필름을 함유하는 기판의 화학적 기계적 연마를 위한 수성 연마 조성물 및 방법 |
| US8808573B2 (en) * | 2011-04-15 | 2014-08-19 | Cabot Microelectronics Corporation | Compositions and methods for selective polishing of silicon nitride materials |
| JP2013074036A (ja) * | 2011-09-27 | 2013-04-22 | Toshiba Corp | Cmp用スラリーおよび半導体装置の製造方法 |
| US9633863B2 (en) * | 2012-07-11 | 2017-04-25 | Cabot Microelectronics Corporation | Compositions and methods for selective polishing of silicon nitride materials |
| US8778211B2 (en) * | 2012-07-17 | 2014-07-15 | Cabot Microelectronics Corporation | GST CMP slurries |
| US8906252B1 (en) * | 2013-05-21 | 2014-12-09 | Cabot Microelelctronics Corporation | CMP compositions selective for oxide and nitride with high removal rate and low defectivity |
| US8974692B2 (en) * | 2013-06-27 | 2015-03-10 | Air Products And Chemicals, Inc. | Chemical mechanical polishing slurry compositions and method using the same for copper and through-silicon via applications |
| US9303187B2 (en) | 2013-07-22 | 2016-04-05 | Cabot Microelectronics Corporation | Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials |
| US9850402B2 (en) | 2013-12-09 | 2017-12-26 | Cabot Microelectronics Corporation | CMP compositions and methods for selective removal of silicon nitride |
| TWI530557B (zh) * | 2014-05-29 | 2016-04-21 | 卡博特微電子公司 | 具高移除速率及低缺陷率之對氧化物與多晶矽及氮化物具有選擇性的cmp組合物 |
| US20160053381A1 (en) * | 2014-08-22 | 2016-02-25 | Cabot Microelectronics Corporation | Germanium chemical mechanical polishing |
| US9505952B2 (en) * | 2015-03-05 | 2016-11-29 | Cabot Microelectronics Corporation | Polishing composition containing ceria abrasive |
-
2015
- 2015-09-09 US US14/849,066 patent/US9597768B1/en active Active
-
2016
- 2016-08-29 JP JP2018511641A patent/JP7021073B2/ja active Active
- 2016-08-29 WO PCT/US2016/049299 patent/WO2017044340A1/en not_active Ceased
- 2016-08-29 EP EP16844893.4A patent/EP3347428B1/en active Active
- 2016-08-29 TW TW105127671A patent/TWI646184B/zh active
- 2016-08-29 CN CN201680052336.XA patent/CN108026432B/zh active Active
- 2016-08-29 KR KR1020187009503A patent/KR102650526B1/ko active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101065458A (zh) * | 2004-11-05 | 2007-10-31 | 卡伯特微电子公司 | 用于高的氮化硅对氧化硅去除速率比率的抛光组合物及方法 |
| CN104284960A (zh) * | 2012-03-14 | 2015-01-14 | 嘉柏微电子材料股份公司 | 具有高移除速率和低缺陷率的对氧化物和氮化物有选择性的cmp组合物 |
| KR101427883B1 (ko) * | 2013-02-08 | 2014-08-07 | 주식회사 케이씨텍 | 표면 개질된 연마입자, 그의 제조 방법 및 그를 포함하는 슬러리 조성물 |
Non-Patent Citations (1)
| Title |
|---|
| 化学机械抛光技术研究现状及发展趋势;燕禾;《材料研究与应用》;20211015;第15卷(第4期);第432-440页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| US20170066102A1 (en) | 2017-03-09 |
| TWI646184B (zh) | 2019-01-01 |
| WO2017044340A1 (en) | 2017-03-16 |
| EP3347428A4 (en) | 2019-05-08 |
| JP2018534379A (ja) | 2018-11-22 |
| US9597768B1 (en) | 2017-03-21 |
| EP3347428A1 (en) | 2018-07-18 |
| EP3347428B1 (en) | 2023-04-19 |
| TW201718816A (zh) | 2017-06-01 |
| KR102650526B1 (ko) | 2024-03-25 |
| CN108026432A (zh) | 2018-05-11 |
| JP7021073B2 (ja) | 2022-02-16 |
| KR20180039176A (ko) | 2018-04-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: Illinois, USA Applicant after: CMC Materials Co.,Ltd. Address before: Illinois, USA Applicant before: Cabot Microelectronics Corp. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Illinois, America Patentee after: CMC Materials Co.,Ltd. Address before: Illinois, America Patentee before: CMC Materials Co.,Ltd. |