JP2018533193A - イメージセンサ装置の製造方法 - Google Patents
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- 239000011229 interlayer Substances 0.000 claims abstract description 50
- 229910052751 metal Inorganic materials 0.000 claims abstract description 45
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- 239000010409 thin film Substances 0.000 claims abstract description 22
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
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- 229910052782 aluminium Inorganic materials 0.000 description 5
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
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- 238000005530 etching Methods 0.000 description 4
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical group O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 4
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- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 2
- -1 polyethylene naphthalate Polymers 0.000 description 2
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- 239000002904 solvent Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 229920002873 Polyethylenimine Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000002042 Silver nanowire Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
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- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
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- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
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Abstract
Description
104 金属線
106 金属線
108 ゲート
110 アイランド
112 ILD層
114 フォトレジスト層
116 フォトレジスト層の露光された部分
118 ビアホール
120 TiW層
122 Al層
124 TiW層
126 ITO層
128 バンク層
130 フォトレジスト層
132 フォトレジスト層の露光された部分
134 ビアホール
136 ETL層
138 BHJ層
140 HTL層
142 TC層
202 ガラスまたはプラスチック基板
204 金属線
206 金属線
208 ゲート
210 アイランド
212 ILD層
214 フォトレジスト層
216 フォトレジスト層の露光された部分
218 ビアホール
220 TiW層
222 Al層
224 TiW層
226 ITO層
228 ILD2層
230 フォトレジスト層
232 フォトレジスト層の露光された部分
234 ビアホール
236 ITO層
238 ETL層
240 BHJ層
242 HTL層
244 TC層
246 バンク層
248 フォトレジスト層
250 フォトレジスト層の露光された部分
252 ビアホール
254 ETL層
256 BHJ層
258 HTL層
260 TC層
Claims (25)
- イメージセンサ装置の製造方法であって、
ガラス基板上に金属化薄膜トランジスタ層構造を提供し、
金属化薄膜トランジスタ層上に中間層誘電体層を形成し、
中間層誘電体層を貫通するビアホールを形成し、
中間層誘電体層の上側表面上と、金属化薄膜トランジスタ層に接触するための中間層誘電体層のビアホールの中に金属層を形成し、
金属層と中間層誘電体層の上側表面上にバンク層を形成し、
バンク層を貫通するビアホールを形成し、
バンク層の上側表面上と金属層の上側表面に接触するためのバンク層のビアホールの中に電子輸送層を形成し、
電子輸送層の上側表面上にバルクのヘテロ接合層を形成し、
バルクのヘテロ接合層の上側表面上にホール輸送層を形成し、
ホール輸送層の上側表面上にトップコンタクト層を形成する、ことを備えるイメージセンサ装置の製造方法。 - 中間層誘電体層は、SiON、SiO2、SiN層を備える、請求項1に記載の方法。
- 金属層は、4層の金属積層を備える、請求項1に記載の方法。
- バンク層は、樹脂層を備える、請求項1に記載の方法。
- 電子輸送層は、仕事関数調整層を備える、請求項1に記載の方法。
- バルクのヘテロ接合層は、光活性層を備える、請求項1に記載の方法。
- ホール輸送層は、仕事関数調整層を備える、請求項1に記載の方法。
- トップコンタクト層は、陽極層を備える、請求項1に記載の方法。
- イメージセンサ装置の製造方法であって、
ガラス基板上に金属化薄膜トランジスタ層構造を提供し、
金属化薄膜トランジスタ層上に第1の中間層誘電体層を形成し、
第1の中間層誘電体層を貫通するビアホールを形成し、
第1の中間層誘電体層の上側表面上と、金属化薄膜トランジスタ層に接触するための第1の中間層誘電体層のビアホールの中に金属層を形成し、
金属層と第1の中間層誘電体層の上側表面上に第2の中間層誘電体層を形成し、
第2の中間層誘電体層を貫通するビアホールを形成し、
第2の中間層誘電体層の上側表面上と金属層の上側表面に接触するための第2の中間層誘電体層のビアホールの中に導電性酸化物層を形成し、
第2の中間層誘電体層と導電性酸化物層の上側表面上に電子輸送層を形成し、
電子輸送層の上側表面上にバルクのヘテロ接合層を形成し、
バルクのヘテロ接合層の上側表面上にホール輸送層を形成し、
ホール輸送層の上側表面上にトップコンタクト層を形成する、ことを備えるイメージセンサ装置の製造方法。 - 第1及び第2の中間層誘電体層は、それぞれ、SiON、SiO2またはSiN層を備える、請求項9に記載の方法。
- 金属層は、4層の金属積層を備える、請求項9に記載の方法。
- 導電性酸化物層は、ITO、IGZO、IZO、ITZO、またはAZO層を備える、請求項9に記載の方法。
- 電子輸送層は、仕事関数調整層を備える、請求項9に記載の方法。
- バルクのヘテロ接合層は、光活性層を備える、請求項9に記載の方法。
- ホール輸送層は、仕事関数調整層を備える、請求項9に記載の方法。
- トップコンタクト層は、陽極層を備える、請求項9に記載の方法。
- イメージセンサ装置の製造方法であって、
ガラス基板上に金属化薄膜トランジスタ層構造を提供し、
金属化薄膜トランジスタ層上に第1の中間層誘電体層を形成し、
第1の中間層誘電体層を貫通するビアホールを形成し、
第1の中間層誘電体層の上側表面上と、金属化薄膜トランジスタに接触するための第1の中間層誘電体層のビアホールの中に金属層を形成し、
金属層と第1の中間層誘電体層の上側表面上に第2の中間層誘電体層を形成し、
第2の中間層誘電体層を貫通するビアホールを形成し、
第2の中間層誘電体層の上側表面上と金属層の上側表面に接触するための第2の中間層誘電体層のビアホールの中に導電性酸化物層を形成し、
第2の中間層誘電体層と導電性酸化物層の上側表面上にバンク層を形成し、
バンク層を貫通するビアホールを形成し、
バンク層の上側表面上と、導電性酸化物層の上側表面に接触するためのバンク層のビアホールの中に電子輸送層を形成し、
電子輸送層の上側表面上にバルクのヘテロ接合層を形成し、
バルクのヘテロ接合層の上側表面上にホール輸送層を形成し、
ホール輸送層の上側表面上にトップコンタクト層を形成する、ことを備えるイメージセンサ装置の製造方法。 - 第1及び第2の中間層誘電体層は、それぞれSiON、SiO2、またはSiN層を備える、請求項17に記載の方法。
- 金属層は、4層の金属積層を備える、請求項17に記載の方法。
- 導電性酸化物層は、ITO、IGZO、IZO、ITZO、またはAZO層を備える、請求項17に記載の方法。
- バンク層は、樹脂層を備える、請求項17に記載の方法。
- 電子輸送層は、仕事関数調整層を備える、請求項17に記載の方法。
- バルクのヘテロ接合層は、光活性層を備える、請求項17に記載の方法。
- ホール輸送層は、仕事関数調整層を備える、請求項17に記載の方法。
- トップコンタクト層は、陽極層を備える、請求項17に記載の方法。
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US20170054097A1 (en) | 2017-02-23 |
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