JP2018526778A5 - - Google Patents

Info

Publication number
JP2018526778A5
JP2018526778A5 JP2018506963A JP2018506963A JP2018526778A5 JP 2018526778 A5 JP2018526778 A5 JP 2018526778A5 JP 2018506963 A JP2018506963 A JP 2018506963A JP 2018506963 A JP2018506963 A JP 2018506963A JP 2018526778 A5 JP2018526778 A5 JP 2018526778A5
Authority
JP
Japan
Prior art keywords
guard ring
ring device
sample
electron
controller
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2018506963A
Other languages
English (en)
Japanese (ja)
Other versions
JP6854278B2 (ja
JP2018526778A (ja
Filing date
Publication date
Priority claimed from US15/231,728 external-priority patent/US10056224B2/en
Application filed filed Critical
Publication of JP2018526778A publication Critical patent/JP2018526778A/ja
Publication of JP2018526778A5 publication Critical patent/JP2018526778A5/ja
Application granted granted Critical
Publication of JP6854278B2 publication Critical patent/JP6854278B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2018506963A 2015-08-10 2016-08-10 ウェハエッジ検査及びレビュー方法及びシステム Active JP6854278B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562203276P 2015-08-10 2015-08-10
US62/203,276 2015-08-10
US15/231,728 US10056224B2 (en) 2015-08-10 2016-08-08 Method and system for edge-of-wafer inspection and review
US15/231,728 2016-08-08
PCT/US2016/046287 WO2017027558A1 (en) 2015-08-10 2016-08-10 Method and system for edge-of-wafer inspection and review

Publications (3)

Publication Number Publication Date
JP2018526778A JP2018526778A (ja) 2018-09-13
JP2018526778A5 true JP2018526778A5 (cg-RX-API-DMAC10.html) 2019-09-26
JP6854278B2 JP6854278B2 (ja) 2021-04-07

Family

ID=57984607

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018506963A Active JP6854278B2 (ja) 2015-08-10 2016-08-10 ウェハエッジ検査及びレビュー方法及びシステム

Country Status (8)

Country Link
US (2) US10056224B2 (cg-RX-API-DMAC10.html)
JP (1) JP6854278B2 (cg-RX-API-DMAC10.html)
KR (1) KR102315789B1 (cg-RX-API-DMAC10.html)
CN (2) CN108419448B (cg-RX-API-DMAC10.html)
IL (2) IL256858B (cg-RX-API-DMAC10.html)
SG (1) SG10201913242YA (cg-RX-API-DMAC10.html)
TW (2) TWI754599B (cg-RX-API-DMAC10.html)
WO (1) WO2017027558A1 (cg-RX-API-DMAC10.html)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10056224B2 (en) * 2015-08-10 2018-08-21 Kla-Tencor Corporation Method and system for edge-of-wafer inspection and review
CN106769162B (zh) * 2017-02-20 2023-06-06 广西大学 一种透射电镜磁性样品预处理器
JP6979107B2 (ja) * 2017-02-24 2021-12-08 株式会社日立ハイテク 荷電粒子線装置
JP6740448B2 (ja) 2017-02-24 2020-08-12 株式会社日立ハイテク 荷電粒子線装置
US11174515B2 (en) 2017-03-15 2021-11-16 The Broad Institute, Inc. CRISPR effector system based diagnostics
US20200071773A1 (en) 2017-04-12 2020-03-05 Massachusetts Eye And Ear Infirmary Tumor signature for metastasis, compositions of matter methods of use thereof
US12590288B2 (en) 2017-04-12 2026-03-31 The Broad Institute, Inc. Method of treating an inflammatory disease by administering an agent which binds a surface receptor on a tuft cell that induces an ILC class 2 inflammatory response
KR102449594B1 (ko) 2017-09-04 2022-10-04 에이에스엠엘 네델란즈 비.브이. 전자 빔 검사 장치 스테이지 위치설정
WO2019071054A1 (en) 2017-10-04 2019-04-11 The Broad Institute, Inc. METHODS AND COMPOSITIONS FOR MODIFYING THE FUNCTION AND STRUCTURE OF BUCKLES AND / OR CHROMATIN DOMAINS
US12171783B2 (en) 2017-11-13 2024-12-24 The Broad Institute, Inc. Methods and compositions for targeting developmental and oncogenic programs in H3K27M gliomas
EP3830256A2 (en) 2018-07-31 2021-06-09 The Broad Institute, Inc. Novel crispr enzymes and systems
US12402610B2 (en) 2018-11-09 2025-09-02 The Broad Institute, Inc. Methods and compositions for modulating innate lymphoid cell pathogenic effectors
US11739156B2 (en) 2019-01-06 2023-08-29 The Broad Institute, Inc. Massachusetts Institute of Technology Methods and compositions for overcoming immunosuppression
US11600497B2 (en) 2019-04-06 2023-03-07 Kla Corporation Using absolute Z-height values for synergy between tools
EP3953960A1 (en) 2019-04-10 2022-02-16 ASML Netherlands B.V. Stage apparatus suitable for a particle beam apparatus
JP7344047B2 (ja) * 2019-08-22 2023-09-13 株式会社ジェーイーエル 基板の位置合わせ方法
JP2021077492A (ja) * 2019-11-07 2021-05-20 株式会社ニューフレアテクノロジー 電子ビーム検査装置及び電子ビーム検査方法
US12165747B2 (en) 2020-01-23 2024-12-10 The Broad Institute, Inc. Molecular spatial mapping of metastatic tumor microenvironment
US11056312B1 (en) 2020-02-05 2021-07-06 Kla Corporation Micro stigmator array for multi electron beam system
CA3203046A1 (en) 2020-12-22 2022-06-30 Helmholtz Zentrum Muenchen - Deutsches Forschungszentrum Fur Gesundheit Und Umwelt (Gmbh) Application of crispr/cas13 for therapy of rna virus and/or bacterium induced diseases
EP4102536A1 (en) * 2021-06-10 2022-12-14 ASML Netherlands B.V. Method of compensating for an effect of electrode distortion, assessment system
TWI872403B (zh) * 2022-12-05 2025-02-11 易發精機股份有限公司 用於晶圓的自動光學檢測系統及其影像處理方法
CN117276112B (zh) * 2023-11-22 2024-04-12 宁德时代新能源科技股份有限公司 缺陷检测方法、装置、设备及计算机可读存储介质

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3924156A (en) * 1974-06-26 1975-12-02 Ibm Method and system for correcting an aberration of a beam of charged particles
US4420691A (en) * 1978-12-28 1983-12-13 Fujitsu Limited Method of aligning electron beam apparatus
US5973323A (en) * 1997-11-05 1999-10-26 Kla-Tencor Corporation Apparatus and method for secondary electron emission microscope
US6352799B1 (en) * 1999-03-03 2002-03-05 Nikon Corporation Charged-particle-beam pattern-transfer methods and apparatus including beam-drift measurement and correction, and device manufacturing methods comprising same
JP3805565B2 (ja) * 1999-06-11 2006-08-02 株式会社日立製作所 電子線画像に基づく検査または計測方法およびその装置
US6664546B1 (en) * 2000-02-10 2003-12-16 Kla-Tencor In-situ probe for optimizing electron beam inspection and metrology based on surface potential
JP2002359170A (ja) * 2001-05-30 2002-12-13 Nikon Corp ステージ装置及び露光装置
EP1744348A3 (en) * 2001-11-02 2007-06-20 Ebara Corporation A semiconductor manufacturing apparatus having a built-in inspection apparatus and method therefor
WO2003067636A1 (fr) * 2002-01-22 2003-08-14 Tokyo Electron Limited Dispositif et procede de traitement de surface
US6903338B2 (en) * 2003-01-30 2005-06-07 Kla-Tencor Technologies Corporation Method and apparatus for reducing substrate edge effects in electron lenses
US7340087B2 (en) 2003-07-14 2008-03-04 Rudolph Technologies, Inc. Edge inspection
CN100373474C (zh) * 2003-09-08 2008-03-05 松下电器产业株式会社 母盘制造方法及装置、母盘的移动距离差检测方法及装置
US7817242B2 (en) * 2003-11-28 2010-10-19 Nikon Corporation Exposure method and device manufacturing method, exposure apparatus, and program
WO2006093268A1 (ja) * 2005-03-03 2006-09-08 Ebara Corporation 写像投影型電子線装置及び該装置を用いた欠陥検査システム
US7205539B1 (en) * 2005-03-10 2007-04-17 Kla-Tencor Technologies Corporation Sample charging control in charged-particle systems
JP4571053B2 (ja) * 2005-09-29 2010-10-27 株式会社日立ハイテクノロジーズ 荷電粒子ビーム装置
CN101145575A (zh) * 2006-09-15 2008-03-19 应用智慧有限公司 非易失性存储单元及阵列
US8038897B2 (en) * 2007-02-06 2011-10-18 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for wafer inspection
JP5318784B2 (ja) 2007-02-23 2013-10-16 ルドルフテクノロジーズ インコーポレイテッド エッジビード除去プロセスを含む、ウェハ製造モニタリング・システム及び方法
US7791022B2 (en) * 2007-03-13 2010-09-07 Advantest Corp. Scanning electron microscope with length measurement function and dimension length measurement method
DE102007024525B4 (de) 2007-03-19 2009-05-28 Vistec Semiconductor Systems Gmbh Vorrichtung und Verfahren zur Bewertung von Defekten am Randbereich eines Wafers
JP5079410B2 (ja) * 2007-07-06 2012-11-21 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
CN100590832C (zh) * 2007-11-28 2010-02-17 上海华虹Nec电子有限公司 自动检测硅片边缘的方法
TWI479570B (zh) * 2007-12-26 2015-04-01 奈華科技有限公司 從樣本移除材料之方法及系統
JP2009302415A (ja) * 2008-06-17 2009-12-24 Hitachi High-Technologies Corp 荷電粒子線装置，試料保持システム，試料の保持方法、および、試料の離脱方法
US8010930B2 (en) * 2008-12-29 2011-08-30 International Business Machine Corporation Extracting consistent compact model parameters for related devices
US8258475B2 (en) * 2009-01-19 2012-09-04 Hitachi High-Technologies Corporation Charged particle radiation device provided with aberration corrector
JP5178558B2 (ja) * 2009-02-03 2013-04-10 株式会社日立ハイテクノロジーズ 荷電粒子線の光軸調整方法、及び荷電粒子線装置
JP5506345B2 (ja) * 2009-11-26 2014-05-28 株式会社日立ハイテクノロジーズ 荷電粒子線顕微鏡および当該荷電粒子顕微鏡の制御方法
EP2557584A1 (en) * 2011-08-10 2013-02-13 Fei Company Charged-particle microscopy imaging method
US20140118240A1 (en) * 2012-11-01 2014-05-01 Motorola Mobility Llc Systems and Methods for Configuring the Display Resolution of an Electronic Device Based on Distance
US9091650B2 (en) * 2012-11-27 2015-07-28 Kla-Tencor Corporation Apodization for pupil imaging scatterometry
EP2747121A1 (en) * 2012-12-21 2014-06-25 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Secondary electron optics & detection device
US9373480B2 (en) * 2013-04-12 2016-06-21 Hitachi High-Technologies Corporation Charged particle beam device and filter member
US9082580B2 (en) * 2013-09-23 2015-07-14 Kla-Tencor Corporation Notched magnetic lens for improved sample access in an SEM
JP6353229B2 (ja) * 2014-01-22 2018-07-04 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
KR101906293B1 (ko) * 2014-02-21 2018-10-10 에이에스엠엘 네델란즈 비.브이. 타겟 배열 및 연계된 타겟의 최적화
JP2015176683A (ja) * 2014-03-14 2015-10-05 株式会社日立ハイテクノロジーズ 静電チャック機構、及び荷電粒子線装置
US10056224B2 (en) * 2015-08-10 2018-08-21 Kla-Tencor Corporation Method and system for edge-of-wafer inspection and review

Similar Documents

Publication Publication Date Title
KR102566320B1 (ko) 하전 입자 빔 디바이스, 필드 곡률 보정기, 및 하전 입자 빔 디바이스를 동작시키는 방법들
JP6854278B2 (ja) ウェハエッジ検査及びレビュー方法及びシステム
US20210233736A1 (en) Apparatus of plural charged-particle beams
KR101921351B1 (ko) 집속 전자 빔 장치의 처리량을 향상시키는 다중 극 정전 편향기
TWI590286B (zh) 用於高解析度電子束成像之裝置及方法
US20130214155A1 (en) Charged particle beam device with dynamic focus and method of operating thereof
US20060060789A1 (en) Focusing system and method for a charged particle imaging system
JP6341680B2 (ja) 集束イオン・ビームの低ｋＶ強化
JP5734809B2 (ja) 単純化粒子エミッタ及びその動作方法
JP2004327439A (ja) 永久磁気レンズおよび静電レンズを備える粒子光学装置
JP4527289B2 (ja) オージェ電子の検出を含む粒子光学装置
JP2014165174A5 (cg-RX-API-DMAC10.html)
US8735814B2 (en) Electron beam device
US11817289B2 (en) Charged particle beam device
JPH0523015B2 (cg-RX-API-DMAC10.html)
WO2010140649A1 (ja) 荷電粒子線装置及び荷電粒子線装置を利用した評価方法
US8993985B2 (en) Drawing apparatus and method of manufacturing article
US20160233048A1 (en) Apparatus and method to control ion beam current
WO2020240861A1 (ja) ビーム偏向デバイス、収差補正器、モノクロメータ、および荷電粒子線装置
JP2018510454A5 (ja) 基板を処理するためにイオンビーム電流を制御する装置及び方法並びにイオン注入機
JP2022524058A (ja) 荷電粒子装置用のビームスプリッタ
JP5281792B2 (ja) 粒子光学的照射系用の照射コンデンサー
US11183359B2 (en) Charged particle beam apparatus
KR20000058187A (ko) 집속 이온 빔 장치
JP6225055B2 (ja) ステージ装置および電子線装置