JP2018518063A5 - - Google Patents

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JP2018518063A5
JP2018518063A5 JP2018515182A JP2018515182A JP2018518063A5 JP 2018518063 A5 JP2018518063 A5 JP 2018518063A5 JP 2018515182 A JP2018515182 A JP 2018515182A JP 2018515182 A JP2018515182 A JP 2018515182A JP 2018518063 A5 JP2018518063 A5 JP 2018518063A5
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Japan
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charge
semiconductor
semiconductor sample
corona
sample
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JP2018515182A
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JP2018518063A (ja
JP6829253B2 (ja
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JP2018515182A 2015-06-05 2016-06-02 一定の表面電位コロナ帯電を用いた半導体ドーピングの測定 Active JP6829253B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/731,677 US10969370B2 (en) 2015-06-05 2015-06-05 Measuring semiconductor doping using constant surface potential corona charging
US14/731,677 2015-06-05
PCT/US2016/035545 WO2016196813A1 (en) 2015-06-05 2016-06-02 Measuring semiconductor doping using constant surface potential corona charging

Publications (3)

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JP2018518063A JP2018518063A (ja) 2018-07-05
JP2018518063A5 true JP2018518063A5 (enExample) 2019-06-27
JP6829253B2 JP6829253B2 (ja) 2021-02-10

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JP2018515182A Active JP6829253B2 (ja) 2015-06-05 2016-06-02 一定の表面電位コロナ帯電を用いた半導体ドーピングの測定

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US (1) US10969370B2 (enExample)
EP (1) EP3304063B1 (enExample)
JP (1) JP6829253B2 (enExample)
HU (1) HUE059396T2 (enExample)
WO (1) WO2016196813A1 (enExample)

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JP7140148B2 (ja) * 2019-02-27 2022-09-21 株式会社デンソー 炭化珪素半導体装置およびその製造方法
CN117276345A (zh) * 2019-02-27 2023-12-22 株式会社电装 碳化硅半导体装置的制造方法
TWI821750B (zh) * 2020-10-07 2023-11-11 台灣愛司帝科技股份有限公司 電子元件量測設備、電子元件量測方法及發光二極體的製造方法
JP7521407B2 (ja) 2020-12-16 2024-07-24 住友電気工業株式会社 炭化珪素エピタキシャル基板の検査方法、炭化珪素エピタキシャル基板の製造方法および炭化珪素エピタキシャル基板の検査装置
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US12027430B1 (en) * 2023-03-17 2024-07-02 Semilab Semiconductor Physics Laboratory Co., Ltd. Semiconductor doping characterization method using photoneutralization time constant of corona surface charge

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