JP6829253B2 - 一定の表面電位コロナ帯電を用いた半導体ドーピングの測定 - Google Patents

一定の表面電位コロナ帯電を用いた半導体ドーピングの測定 Download PDF

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JP6829253B2
JP6829253B2 JP2018515182A JP2018515182A JP6829253B2 JP 6829253 B2 JP6829253 B2 JP 6829253B2 JP 2018515182 A JP2018515182 A JP 2018515182A JP 2018515182 A JP2018515182 A JP 2018515182A JP 6829253 B2 JP6829253 B2 JP 6829253B2
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charge
semiconductor
surface potential
corona
semiconductor sample
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JP2018518063A5 (enExample
JP2018518063A (ja
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ラゴウスキー、ヤツェク
ウィルソン、マーシャル
サフチョク、アレクサンダー
アルメイダ、カルロス
ブダイ、チャバ
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Semilab Semiconductor Physics Laboratory Co ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/12—Measuring electrostatic fields or voltage-potential
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
    • G01N27/221—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance by investigating the dielectric properties
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/0095—Semiconductive materials

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  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
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  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Food Science & Technology (AREA)
  • Medicinal Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
JP2018515182A 2015-06-05 2016-06-02 一定の表面電位コロナ帯電を用いた半導体ドーピングの測定 Active JP6829253B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/731,677 US10969370B2 (en) 2015-06-05 2015-06-05 Measuring semiconductor doping using constant surface potential corona charging
US14/731,677 2015-06-05
PCT/US2016/035545 WO2016196813A1 (en) 2015-06-05 2016-06-02 Measuring semiconductor doping using constant surface potential corona charging

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JP2018518063A JP2018518063A (ja) 2018-07-05
JP2018518063A5 JP2018518063A5 (enExample) 2019-06-27
JP6829253B2 true JP6829253B2 (ja) 2021-02-10

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US (1) US10969370B2 (enExample)
EP (1) EP3304063B1 (enExample)
JP (1) JP6829253B2 (enExample)
HU (1) HUE059396T2 (enExample)
WO (1) WO2016196813A1 (enExample)

Families Citing this family (7)

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Publication number Priority date Publication date Assignee Title
JP7140148B2 (ja) * 2019-02-27 2022-09-21 株式会社デンソー 炭化珪素半導体装置およびその製造方法
CN117276345A (zh) * 2019-02-27 2023-12-22 株式会社电装 碳化硅半导体装置的制造方法
TWI821750B (zh) * 2020-10-07 2023-11-11 台灣愛司帝科技股份有限公司 電子元件量測設備、電子元件量測方法及發光二極體的製造方法
JP7521407B2 (ja) 2020-12-16 2024-07-24 住友電気工業株式会社 炭化珪素エピタキシャル基板の検査方法、炭化珪素エピタキシャル基板の製造方法および炭化珪素エピタキシャル基板の検査装置
JP7621308B2 (ja) * 2021-05-14 2025-01-24 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
US11769698B2 (en) * 2021-07-16 2023-09-26 Taiwan Semiconductor Manufacturing Company Ltd. Method of testing semiconductor package
US12027430B1 (en) * 2023-03-17 2024-07-02 Semilab Semiconductor Physics Laboratory Co., Ltd. Semiconductor doping characterization method using photoneutralization time constant of corona surface charge

Family Cites Families (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4812756A (en) * 1987-08-26 1989-03-14 International Business Machines Corporation Contactless technique for semicondutor wafer testing
US5216362A (en) * 1991-10-08 1993-06-01 International Business Machines Corporation Contactless technique for measuring epitaxial dopant concentration profiles in semiconductor wafers
US5639357A (en) * 1994-05-12 1997-06-17 Applied Materials Synchronous modulation bias sputter method and apparatus for complete planarization of metal films
US5498974A (en) 1994-12-30 1996-03-12 International Business Machines Corporation Contactless corona-oxide-semiconductor Q-V mobile charge measurement method and apparatus
US5661408A (en) * 1995-03-01 1997-08-26 Qc Solutions, Inc. Real-time in-line testing of semiconductor wafers
US5485091A (en) * 1995-05-12 1996-01-16 International Business Machines Corporation Contactless electrical thin oxide measurements
US5644223A (en) 1995-05-12 1997-07-01 International Business Machines Corporation Uniform density charge deposit source
US5773989A (en) * 1995-07-14 1998-06-30 University Of South Florida Measurement of the mobile ion concentration in the oxide layer of a semiconductor wafer
US5907764A (en) * 1995-11-13 1999-05-25 Advanced Micro Devices, Inc. In-line detection and assessment of net charge in PECVD silicon dioxide (oxide) layers
US5807467A (en) * 1996-01-22 1998-09-15 Micron Technology, Inc. In situ preclean in a PVD chamber with a biased substrate configuration
US6097205A (en) * 1997-02-14 2000-08-01 Semitest, Inc. Method and apparatus for characterizing a specimen of semiconductor material
US6034535A (en) * 1997-02-14 2000-03-07 Semitest Inc. Method utilizing a modulated light beam for determining characteristics such as the doping concentration profile of a specimen of semiconductor material
US6097196A (en) * 1997-04-23 2000-08-01 Verkuil; Roger L. Non-contact tunnelling field measurement for a semiconductor oxide layer
US6937050B1 (en) * 1997-04-30 2005-08-30 Min-Su Fung Non-contact mobile charge measurement with leakage band-bending and dipole correction
US7230443B1 (en) * 1997-04-30 2007-06-12 Kla-Tencor Corporation Non-contact mobile charge measurement with leakage band-bending and dipole correction
US6011404A (en) * 1997-07-03 2000-01-04 Lucent Technologies Inc. System and method for determining near--surface lifetimes and the tunneling field of a dielectric in a semiconductor
US6037797A (en) * 1997-07-11 2000-03-14 Semiconductor Diagnostics, Inc. Measurement of the interface trap charge in an oxide semiconductor layer interface
US6191605B1 (en) * 1997-08-18 2001-02-20 Tom G. Miller Contactless method for measuring total charge of an insulating layer on a substrate using corona charge
US6127289A (en) * 1997-09-05 2000-10-03 Lucent Technologies, Inc. Method for treating semiconductor wafers with corona charge and devices using corona charging
US6395437B1 (en) * 1999-10-29 2002-05-28 Advanced Micro Devices, Inc. Junction profiling using a scanning voltage micrograph
US6538462B1 (en) * 1999-11-30 2003-03-25 Semiconductor Diagnostics, Inc. Method for measuring stress induced leakage current and gate dielectric integrity using corona discharge
TW525213B (en) * 2000-02-16 2003-03-21 Hitachi Ltd Process monitoring methods in a plasma processing apparatus, monitoring units, and a sample processing method using the monitoring units
US6569691B1 (en) * 2000-03-29 2003-05-27 Semiconductor Diagnostics, Inc. Measurement of different mobile ion concentrations in the oxide layer of a semiconductor wafer
US6597193B2 (en) * 2001-01-26 2003-07-22 Semiconductor Diagnostics, Inc. Steady state method for measuring the thickness and the capacitance of ultra thin dielectric in the presence of substantial leakage current
US6680621B2 (en) * 2001-01-26 2004-01-20 Semiconductor Diagnostics, Inc. Steady state method for measuring the thickness and the capacitance of ultra thin dielectric in the presence of substantial leakage current
US7316764B2 (en) * 2001-03-16 2008-01-08 4 Wave, Inc. System and method for performing sputter etching using independent ion and electron sources and a substrate biased with an a-symmetric bi-polar DC pulse signal
US6723209B2 (en) * 2001-03-16 2004-04-20 4-Wave, Inc. System and method for performing thin film deposition or chemical treatment using an energetic flux of neutral reactive molecular fragments, atoms or radicals
US6679976B2 (en) * 2001-03-16 2004-01-20 4Wave, Inc. System and method for performing sputter deposition with multiple targets using independent ion and electron sources and independent target biasing with DC pulse signals
US7103848B2 (en) * 2001-09-13 2006-09-05 International Business Machines Corporation Handheld electronic book reader with annotation and usage tracking capabilities
US6734696B2 (en) * 2001-11-01 2004-05-11 Kla-Tencor Technologies Corp. Non-contact hysteresis measurements of insulating films
TW200404334A (en) * 2002-06-17 2004-03-16 Mitsubishi Heavy Ind Ltd Method and apparatus for measuring wafer voltage or temperature
KR100788474B1 (ko) * 2002-06-26 2007-12-24 세미이큅, 인코포레이티드 자기 요크 어셈블리
US6686595B2 (en) * 2002-06-26 2004-02-03 Semequip Inc. Electron impact ion source
US7012438B1 (en) 2002-07-10 2006-03-14 Kla-Tencor Technologies Corp. Methods and systems for determining a property of an insulating film
JP4658458B2 (ja) * 2002-07-22 2011-03-23 大日本スクリーン製造株式会社 膜厚測定方法、比誘電率測定方法、膜厚測定装置、および比誘電率測定装置
US7248062B1 (en) * 2002-11-04 2007-07-24 Kla-Tencor Technologies Corp. Contactless charge measurement of product wafers and control of corona generation and deposition
US7254986B2 (en) * 2002-12-13 2007-08-14 General Electric Company Sensor device for detection of dissolved hydrocarbon gases in oil filled high-voltage electrical equipment
WO2004055528A2 (en) * 2002-12-13 2004-07-01 Accent Optical Technologies, Inc. Apparatus and method for electrical characterization of semiconductors
US7103482B2 (en) * 2003-02-03 2006-09-05 Qcept Technologies, Inc. Inspection system and apparatus
US7308367B2 (en) * 2003-02-03 2007-12-11 Qcept Technologies, Inc. Wafer inspection system
US6911350B2 (en) * 2003-03-28 2005-06-28 Qc Solutions, Inc. Real-time in-line testing of semiconductor wafers
US6909291B1 (en) * 2003-06-24 2005-06-21 Kla-Tencor Technologies Corp. Systems and methods for using non-contact voltage sensors and corona discharge guns
US7119569B2 (en) * 2004-03-05 2006-10-10 Qc Solutions, Inc. Real-time in-line testing of semiconductor wafers
JP4786140B2 (ja) * 2004-04-26 2011-10-05 大日本スクリーン製造株式会社 比誘電率測定方法および比誘電率測定装置
US7405580B2 (en) 2005-03-16 2008-07-29 Semiconductor Diagnostics, Inc. Self-calibration in non-contact surface photovoltage measurement of depletion capacitance and dopant concentration
US7521946B1 (en) 2005-04-06 2009-04-21 Kla-Tencor Technologies Corporation Electrical measurements on semiconductors using corona and microwave techniques
US7202691B2 (en) * 2005-05-31 2007-04-10 Semiconductor Diagnostics, Inc. Non-contact method for acquiring charge-voltage data on miniature test areas of semiconductor product wafers
KR100665191B1 (ko) * 2005-07-20 2007-01-09 삼성전자주식회사 반도체 소자 테스트 설비 및 테스트 방법
US7893703B2 (en) * 2005-08-19 2011-02-22 Kla-Tencor Technologies Corp. Systems and methods for controlling deposition of a charge on a wafer for measurement of one or more electrical properties of the wafer
JP4430007B2 (ja) * 2005-12-27 2010-03-10 大日本スクリーン製造株式会社 絶縁膜特性測定方法および絶縁膜特性測定装置
US20080174918A1 (en) * 2007-01-19 2008-07-24 Nanochip, Inc. Method and system for writing and reading a charge-trap media with a probe tip
US7772866B2 (en) * 2007-03-07 2010-08-10 International Business Machines Corporation Structure and method of mapping signal intensity to surface voltage for integrated circuit inspection
US8004290B1 (en) * 2007-04-04 2011-08-23 Kla-Tencor Corporation Method and apparatus for determining dielectric layer properties
US8385768B2 (en) * 2007-04-18 2013-02-26 Canon Kabushiki Kaisha Image forming apparatus that measures temperatures at a first location and a second location different from the first location in a longitudinal direction of a photoconductor, and that changes an exposure at a third location between the first and second locations based on respective temperature of or near the surface of the photo conductor at the first and second locations, and corresponding image forming method
EP1998184B1 (en) * 2007-05-29 2010-02-10 Imec Mobility measurements of inversion charge carriers
DE102007025341B4 (de) * 2007-05-31 2010-11-11 Advanced Micro Devices, Inc., Sunnyvale Verfahren und Abscheidesystem mit Mehrschrittabscheidesteuerung
US20080305598A1 (en) * 2007-06-07 2008-12-11 Horsky Thomas N Ion implantation device and a method of semiconductor manufacturing by the implantation of ions derived from carborane molecular species
US8481961B2 (en) * 2008-02-14 2013-07-09 The Regents Of The University Of California Shielded capacitive electrode
WO2010005931A2 (en) * 2008-07-07 2010-01-14 Lam Research Corporation Capacitively-coupled electrostatic (cce) probe arrangement for detecting dechucking in a plasma processing chamber and methods thereof
US9997325B2 (en) * 2008-07-17 2018-06-12 Verity Instruments, Inc. Electron beam exciter for use in chemical analysis in processing systems
US7898280B2 (en) * 2008-09-08 2011-03-01 Emil Kamieniecki Electrical characterization of semiconductor materials
JP2013511814A (ja) * 2009-11-19 2013-04-04 ラム リサーチ コーポレーション プラズマ処理システムを制御するための方法および装置
US8889021B2 (en) * 2010-01-21 2014-11-18 Kla-Tencor Corporation Process condition sensing device and method for plasma chamber
US8803533B2 (en) * 2011-01-06 2014-08-12 University Of South Florida Noncontact determination of interface trap density for semiconductor-dielectric interface structures
US20120283973A1 (en) * 2011-05-05 2012-11-08 Imec Plasma probe and method for plasma diagnostics
US8693912B2 (en) * 2011-06-14 2014-04-08 Kabushiki Kaisha Toshiba Fixing device and image forming apparatus
US8872159B2 (en) * 2011-09-29 2014-10-28 The United States Of America, As Represented By The Secretary Of The Navy Graphene on semiconductor detector
JP5817509B2 (ja) * 2011-12-26 2015-11-18 株式会社リコー トナー及び現像剤、それを用いた画像形成装置、プロセスカートリッジ
US8896338B2 (en) * 2012-03-29 2014-11-25 Emil Kamieniecki Electrical characterization of semiconductor materials
US8836248B2 (en) * 2012-11-28 2014-09-16 Xerox Corporation Monitoring a condition of a solid state charge device in electrostatic printing
US9746514B2 (en) * 2013-09-04 2017-08-29 Kla-Tencor Corporation Apparatus and method for accurate measurement and mapping of forward and reverse-bias current-voltage characteristics of large area lateral p-n junctions
US20150098161A1 (en) * 2013-10-09 2015-04-09 Hamilton Sundstrand Corporation Integrated corona fault detection
US9084334B1 (en) * 2014-11-10 2015-07-14 Illinois Tool Works Inc. Balanced barrier discharge neutralization in variable pressure environments

Also Published As

Publication number Publication date
EP3304063B1 (en) 2022-03-30
WO2016196813A1 (en) 2016-12-08
HUE059396T2 (hu) 2022-11-28
EP3304063A4 (en) 2019-03-20
US20160356750A1 (en) 2016-12-08
EP3304063A1 (en) 2018-04-11
JP2018518063A (ja) 2018-07-05
US10969370B2 (en) 2021-04-06

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