JP2012234817A5 - - Google Patents
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- Publication number
- JP2012234817A5 JP2012234817A5 JP2012105802A JP2012105802A JP2012234817A5 JP 2012234817 A5 JP2012234817 A5 JP 2012234817A5 JP 2012105802 A JP2012105802 A JP 2012105802A JP 2012105802 A JP2012105802 A JP 2012105802A JP 2012234817 A5 JP2012234817 A5 JP 2012234817A5
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- bias
- probe
- potential
- pulse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000523 sample Substances 0.000 claims 28
- 239000003990 capacitor Substances 0.000 claims 19
- 238000000034 method Methods 0.000 claims 14
- 230000004907 flux Effects 0.000 claims 12
- 238000012544 monitoring process Methods 0.000 claims 2
- 238000011065 in-situ storage Methods 0.000 claims 1
- 238000005259 measurement Methods 0.000 claims 1
- 238000012806 monitoring device Methods 0.000 claims 1
- 230000000704 physical effect Effects 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161482980P | 2011-05-05 | 2011-05-05 | |
| US61/482,980 | 2011-05-05 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012234817A JP2012234817A (ja) | 2012-11-29 |
| JP2012234817A5 true JP2012234817A5 (enExample) | 2015-05-28 |
Family
ID=46052645
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012105802A Pending JP2012234817A (ja) | 2011-05-05 | 2012-05-07 | プラズマプローブ及びプラズマ診断のための方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20120283973A1 (enExample) |
| EP (1) | EP2521158A1 (enExample) |
| JP (1) | JP2012234817A (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9383460B2 (en) | 2012-05-14 | 2016-07-05 | Bwxt Nuclear Operations Group, Inc. | Beam imaging sensor |
| US9535100B2 (en) | 2012-05-14 | 2017-01-03 | Bwxt Nuclear Operations Group, Inc. | Beam imaging sensor and method for using same |
| CN103140009B (zh) * | 2013-01-31 | 2015-11-11 | 北京航空航天大学 | 用于等离子体诊断的Langmuir多探针控制电路 |
| DE102013110722A1 (de) * | 2013-09-27 | 2015-04-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Plasma-ionengestütztes Beschichtungsverfahren und Plasmasonde |
| CN104941958A (zh) * | 2014-03-25 | 2015-09-30 | 中国科学院空间科学与应用研究中心 | 一种用于朗缪尔探针传感仪的在轨除污装置 |
| KR102222902B1 (ko) | 2014-05-12 | 2021-03-05 | 삼성전자주식회사 | 플라즈마 장비 및 이를 이용한 반도체 소자의 제조 방법 |
| KR20160022458A (ko) | 2014-08-19 | 2016-03-02 | 삼성전자주식회사 | 플라즈마 장비 및 이의 동작 방법 |
| US10969370B2 (en) * | 2015-06-05 | 2021-04-06 | Semilab Semiconductor Physics Laboratory Co., Ltd. | Measuring semiconductor doping using constant surface potential corona charging |
| RU2616853C1 (ru) * | 2015-11-16 | 2017-04-18 | федеральное государственное автономное образовательное учреждение высшего образования "Московский физико-технический институт (государственный университет)" | Датчик на основе эффекта Холла для измерения концентрации электронов в плазме |
| CZ2016537A3 (cs) * | 2016-09-05 | 2018-01-10 | Fyzikální ústav AV ČR, v.v.i. | Způsob diagnostiky plazmatu s vyloučením měření narušených nestabilitami a přechodovými jevy v plazmatu a zařízení k provádění tohoto způsobu |
| RU2648268C1 (ru) * | 2016-12-14 | 2018-03-23 | федеральное государственное бюджетное образовательное учреждение высшего образования "Санкт-Петербургский горный университет" | Способ определения параметров нейтральной и электронной компонент неравновесной плазмы |
| TWI620228B (zh) * | 2016-12-29 | 2018-04-01 | 財團法人工業技術研究院 | 電漿處理裝置與電漿處理方法 |
| KR102043994B1 (ko) * | 2017-04-14 | 2019-11-12 | 광운대학교 산학협력단 | 플라즈마 진단 시스템 및 방법 |
| CN111357077B (zh) * | 2017-11-16 | 2023-09-08 | 东京毅力科创株式会社 | 使用同步信号调制的等离子体加工系统 |
| CN109507489A (zh) * | 2018-10-18 | 2019-03-22 | 北京理工大学 | 一种用于低温等离子体电位诊断的探针系统 |
| CN109752602B (zh) * | 2018-12-10 | 2021-02-02 | 兰州空间技术物理研究所 | 一种空间站电位检测仪静电荷清零方法及清零电路 |
| CN111403056B (zh) * | 2020-03-31 | 2023-02-03 | 中国科学院合肥物质科学研究院 | 一种适用于磁约束等离子体的快电子测量探针系统 |
| CN112820618B (zh) * | 2020-12-14 | 2023-04-07 | 兰州空间技术物理研究所 | 一种微型溅射离子泵等离子体诊断装置及诊断方法 |
| CN112888128B (zh) * | 2021-01-18 | 2023-04-07 | 南昌大学 | 一种测量等离子体离子非广延参数的方法 |
| EP4177928B1 (en) * | 2021-11-09 | 2024-01-03 | Impedans Ltd | Two stage ion current measuring method in a device for analysis of plasma processes |
| CN114491382B (zh) * | 2022-02-14 | 2024-06-11 | 山东大学 | 一种用于获取等离子体参数的数据处理方法及系统 |
| KR102752788B1 (ko) * | 2022-08-09 | 2025-01-10 | 한양대학교 산학협력단 | 플라즈마 공정 모니터링 방법 및 플라즈마 공정 모니터링 장치 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4200636A1 (de) * | 1992-01-13 | 1993-07-15 | Fraunhofer Ges Forschung | Vorrichtung zur messung von plasmaparametern in hochfrequenzentladungen |
| FR2738984B1 (fr) | 1995-09-19 | 1997-11-21 | Centre Nat Rech Scient | Procede et dispositif de mesure d'un flux d'ions dans un plasma |
| US6830650B2 (en) * | 2002-07-12 | 2004-12-14 | Advanced Energy Industries, Inc. | Wafer probe for measuring plasma and surface characteristics in plasma processing environments |
| US6902646B2 (en) * | 2003-08-14 | 2005-06-07 | Advanced Energy Industries, Inc. | Sensor array for measuring plasma characteristics in plasma processing environments |
| US7413672B1 (en) * | 2006-04-04 | 2008-08-19 | Lam Research Corporation | Controlling plasma processing using parameters derived through the use of a planar ion flux probing arrangement |
| US7555948B2 (en) * | 2006-05-01 | 2009-07-07 | Lynn Karl Wiese | Process condition measuring device with shielding |
| US7829468B2 (en) * | 2006-06-07 | 2010-11-09 | Lam Research Corporation | Method and apparatus to detect fault conditions of plasma processing reactor |
| JP5281309B2 (ja) * | 2008-03-28 | 2013-09-04 | 東京エレクトロン株式会社 | プラズマエッチング装置及びプラズマエッチング方法及びコンピュータ読み取り可能な記憶媒体 |
| TWI458850B (zh) * | 2008-07-07 | 2014-11-01 | Lam Res Corp | 用來鑑定電漿處理腔室中之薄膜之特性的射頻偏壓電容耦合靜電探針裝置 |
-
2012
- 2012-05-04 US US13/464,679 patent/US20120283973A1/en not_active Abandoned
- 2012-05-07 EP EP12166974A patent/EP2521158A1/en not_active Withdrawn
- 2012-05-07 JP JP2012105802A patent/JP2012234817A/ja active Pending
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