JP2012234817A - プラズマプローブ及びプラズマ診断のための方法 - Google Patents

プラズマプローブ及びプラズマ診断のための方法 Download PDF

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Publication number
JP2012234817A
JP2012234817A JP2012105802A JP2012105802A JP2012234817A JP 2012234817 A JP2012234817 A JP 2012234817A JP 2012105802 A JP2012105802 A JP 2012105802A JP 2012105802 A JP2012105802 A JP 2012105802A JP 2012234817 A JP2012234817 A JP 2012234817A
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Prior art keywords
plasma
probe
bias
pulse
potential
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JP2012105802A
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Japanese (ja)
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JP2012234817A5 (enExample
Inventor
Samara Vladimir
ヴラディミル・サマラ
De Marneffe Jean-Francois
ジャン−フランソワ・デ・マルネッフェ
Boullart Werner
ヴェルナー・ブウラール
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Interuniversitair Microelektronica Centrum vzw IMEC
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Interuniversitair Microelektronica Centrum vzw IMEC
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Publication of JP2012234817A publication Critical patent/JP2012234817A/ja
Publication of JP2012234817A5 publication Critical patent/JP2012234817A5/ja
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/32935Monitoring and controlling tubes by information coming from the object and/or discharge
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0046Arrangements for measuring currents or voltages or for indicating presence or sign thereof characterised by a specific application or detail not covered by any other subgroup of G01R19/00
    • G01R19/0061Measuring currents of particle-beams, currents from electron multipliers, photocurrents, ion currents; Measuring in plasmas
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/0006Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
    • H05H1/0068Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature by thermal means
    • H05H1/0075Langmuir probes

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2012105802A 2011-05-05 2012-05-07 プラズマプローブ及びプラズマ診断のための方法 Pending JP2012234817A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161482980P 2011-05-05 2011-05-05
US61/482,980 2011-05-05

Publications (2)

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JP2012234817A true JP2012234817A (ja) 2012-11-29
JP2012234817A5 JP2012234817A5 (enExample) 2015-05-28

Family

ID=46052645

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JP2012105802A Pending JP2012234817A (ja) 2011-05-05 2012-05-07 プラズマプローブ及びプラズマ診断のための方法

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US (1) US20120283973A1 (enExample)
EP (1) EP2521158A1 (enExample)
JP (1) JP2012234817A (enExample)

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WO2018190486A1 (ko) * 2017-04-14 2018-10-18 광운대학교 산학협력단 플라즈마 진단 시스템 및 방법
CN109752602A (zh) * 2018-12-10 2019-05-14 兰州空间技术物理研究所 一种空间站电位检测仪静电荷清零方法及清零电路
KR20240020790A (ko) * 2022-08-09 2024-02-16 한양대학교 산학협력단 플라즈마 공정 모니터링 방법 및 플라즈마 공정 모니터링 장치

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US9383460B2 (en) 2012-05-14 2016-07-05 Bwxt Nuclear Operations Group, Inc. Beam imaging sensor
US9535100B2 (en) 2012-05-14 2017-01-03 Bwxt Nuclear Operations Group, Inc. Beam imaging sensor and method for using same
CN103140009B (zh) * 2013-01-31 2015-11-11 北京航空航天大学 用于等离子体诊断的Langmuir多探针控制电路
DE102013110722A1 (de) * 2013-09-27 2015-04-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Plasma-ionengestütztes Beschichtungsverfahren und Plasmasonde
CN104941958A (zh) * 2014-03-25 2015-09-30 中国科学院空间科学与应用研究中心 一种用于朗缪尔探针传感仪的在轨除污装置
KR102222902B1 (ko) 2014-05-12 2021-03-05 삼성전자주식회사 플라즈마 장비 및 이를 이용한 반도체 소자의 제조 방법
KR20160022458A (ko) 2014-08-19 2016-03-02 삼성전자주식회사 플라즈마 장비 및 이의 동작 방법
US10969370B2 (en) * 2015-06-05 2021-04-06 Semilab Semiconductor Physics Laboratory Co., Ltd. Measuring semiconductor doping using constant surface potential corona charging
RU2616853C1 (ru) * 2015-11-16 2017-04-18 федеральное государственное автономное образовательное учреждение высшего образования "Московский физико-технический институт (государственный университет)" Датчик на основе эффекта Холла для измерения концентрации электронов в плазме
CZ2016537A3 (cs) * 2016-09-05 2018-01-10 Fyzikální ústav AV ČR, v.v.i. Způsob diagnostiky plazmatu s vyloučením měření narušených nestabilitami a přechodovými jevy v plazmatu a zařízení k provádění tohoto způsobu
RU2648268C1 (ru) * 2016-12-14 2018-03-23 федеральное государственное бюджетное образовательное учреждение высшего образования "Санкт-Петербургский горный университет" Способ определения параметров нейтральной и электронной компонент неравновесной плазмы
TWI620228B (zh) * 2016-12-29 2018-04-01 財團法人工業技術研究院 電漿處理裝置與電漿處理方法
CN111357077B (zh) * 2017-11-16 2023-09-08 东京毅力科创株式会社 使用同步信号调制的等离子体加工系统
CN109507489A (zh) * 2018-10-18 2019-03-22 北京理工大学 一种用于低温等离子体电位诊断的探针系统
CN111403056B (zh) * 2020-03-31 2023-02-03 中国科学院合肥物质科学研究院 一种适用于磁约束等离子体的快电子测量探针系统
CN112820618B (zh) * 2020-12-14 2023-04-07 兰州空间技术物理研究所 一种微型溅射离子泵等离子体诊断装置及诊断方法
CN112888128B (zh) * 2021-01-18 2023-04-07 南昌大学 一种测量等离子体离子非广延参数的方法
EP4177928B1 (en) * 2021-11-09 2024-01-03 Impedans Ltd Two stage ion current measuring method in a device for analysis of plasma processes
CN114491382B (zh) * 2022-02-14 2024-06-11 山东大学 一种用于获取等离子体参数的数据处理方法及系统

Citations (5)

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JP2007502519A (ja) * 2003-08-14 2007-02-08 オンウェハー テクノロジーズ インコーポレイテッド プラズマプロセス環境におけるプラズマ特性測定用センサアレイ
JP2009532916A (ja) * 2006-04-04 2009-09-10 ラム リサーチ コーポレーション Pifプロービング構成を用いるプラズマ処理の制御
JP2009535855A (ja) * 2006-05-01 2009-10-01 ケーエルエー−テンカー・コーポレーション シールドを備えるプロセス条件測定素子
JP2009540569A (ja) * 2006-06-07 2009-11-19 ラム リサーチ コーポレーション プラズマ処理反応器の故障状態を検出する方法及び装置
US20100007362A1 (en) * 2008-07-07 2010-01-14 Jean-Paul Booth Rf-biased capacitively-coupled electrostatic (rfb-cce) probe arrangement for characterizing a film in a plasma processing chamber

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DE4200636A1 (de) * 1992-01-13 1993-07-15 Fraunhofer Ges Forschung Vorrichtung zur messung von plasmaparametern in hochfrequenzentladungen
FR2738984B1 (fr) 1995-09-19 1997-11-21 Centre Nat Rech Scient Procede et dispositif de mesure d'un flux d'ions dans un plasma
US6830650B2 (en) * 2002-07-12 2004-12-14 Advanced Energy Industries, Inc. Wafer probe for measuring plasma and surface characteristics in plasma processing environments
JP5281309B2 (ja) * 2008-03-28 2013-09-04 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマエッチング方法及びコンピュータ読み取り可能な記憶媒体

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JP2007502519A (ja) * 2003-08-14 2007-02-08 オンウェハー テクノロジーズ インコーポレイテッド プラズマプロセス環境におけるプラズマ特性測定用センサアレイ
JP2009532916A (ja) * 2006-04-04 2009-09-10 ラム リサーチ コーポレーション Pifプロービング構成を用いるプラズマ処理の制御
JP2009535855A (ja) * 2006-05-01 2009-10-01 ケーエルエー−テンカー・コーポレーション シールドを備えるプロセス条件測定素子
JP2009540569A (ja) * 2006-06-07 2009-11-19 ラム リサーチ コーポレーション プラズマ処理反応器の故障状態を検出する方法及び装置
US20100007362A1 (en) * 2008-07-07 2010-01-14 Jean-Paul Booth Rf-biased capacitively-coupled electrostatic (rfb-cce) probe arrangement for characterizing a film in a plasma processing chamber

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018190486A1 (ko) * 2017-04-14 2018-10-18 광운대학교 산학협력단 플라즈마 진단 시스템 및 방법
US10964515B2 (en) 2017-04-14 2021-03-30 Kwangwoon University Industry-Academic Collaboration Foundation Plasma diagnostic system and method
CN109752602A (zh) * 2018-12-10 2019-05-14 兰州空间技术物理研究所 一种空间站电位检测仪静电荷清零方法及清零电路
CN109752602B (zh) * 2018-12-10 2021-02-02 兰州空间技术物理研究所 一种空间站电位检测仪静电荷清零方法及清零电路
KR20240020790A (ko) * 2022-08-09 2024-02-16 한양대학교 산학협력단 플라즈마 공정 모니터링 방법 및 플라즈마 공정 모니터링 장치
KR102752788B1 (ko) * 2022-08-09 2025-01-10 한양대학교 산학협력단 플라즈마 공정 모니터링 방법 및 플라즈마 공정 모니터링 장치

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EP2521158A1 (en) 2012-11-07

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