JP2012234817A - プラズマプローブ及びプラズマ診断のための方法 - Google Patents
プラズマプローブ及びプラズマ診断のための方法 Download PDFInfo
- Publication number
- JP2012234817A JP2012234817A JP2012105802A JP2012105802A JP2012234817A JP 2012234817 A JP2012234817 A JP 2012234817A JP 2012105802 A JP2012105802 A JP 2012105802A JP 2012105802 A JP2012105802 A JP 2012105802A JP 2012234817 A JP2012234817 A JP 2012234817A
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- Prior art keywords
- plasma
- probe
- bias
- pulse
- potential
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- 239000000523 sample Substances 0.000 title claims abstract description 171
- 238000000034 method Methods 0.000 title claims abstract description 51
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- 238000005259 measurement Methods 0.000 claims abstract description 23
- 238000007667 floating Methods 0.000 claims description 50
- 230000004907 flux Effects 0.000 claims description 40
- 238000012544 monitoring process Methods 0.000 claims description 11
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- 150000002500 ions Chemical class 0.000 description 30
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005513 bias potential Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 150000001768 cations Chemical class 0.000 description 3
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000012625 in-situ measurement Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
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- 238000011160 research Methods 0.000 description 1
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- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/0046—Arrangements for measuring currents or voltages or for indicating presence or sign thereof characterised by a specific application or detail not covered by any other subgroup of G01R19/00
- G01R19/0061—Measuring currents of particle-beams, currents from electron multipliers, photocurrents, ion currents; Measuring in plasmas
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/0006—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
- H05H1/0068—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature by thermal means
- H05H1/0075—Langmuir probes
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161482980P | 2011-05-05 | 2011-05-05 | |
| US61/482,980 | 2011-05-05 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012234817A true JP2012234817A (ja) | 2012-11-29 |
| JP2012234817A5 JP2012234817A5 (enExample) | 2015-05-28 |
Family
ID=46052645
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012105802A Pending JP2012234817A (ja) | 2011-05-05 | 2012-05-07 | プラズマプローブ及びプラズマ診断のための方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20120283973A1 (enExample) |
| EP (1) | EP2521158A1 (enExample) |
| JP (1) | JP2012234817A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018190486A1 (ko) * | 2017-04-14 | 2018-10-18 | 광운대학교 산학협력단 | 플라즈마 진단 시스템 및 방법 |
| CN109752602A (zh) * | 2018-12-10 | 2019-05-14 | 兰州空间技术物理研究所 | 一种空间站电位检测仪静电荷清零方法及清零电路 |
| KR20240020790A (ko) * | 2022-08-09 | 2024-02-16 | 한양대학교 산학협력단 | 플라즈마 공정 모니터링 방법 및 플라즈마 공정 모니터링 장치 |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9383460B2 (en) | 2012-05-14 | 2016-07-05 | Bwxt Nuclear Operations Group, Inc. | Beam imaging sensor |
| US9535100B2 (en) | 2012-05-14 | 2017-01-03 | Bwxt Nuclear Operations Group, Inc. | Beam imaging sensor and method for using same |
| CN103140009B (zh) * | 2013-01-31 | 2015-11-11 | 北京航空航天大学 | 用于等离子体诊断的Langmuir多探针控制电路 |
| DE102013110722A1 (de) * | 2013-09-27 | 2015-04-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Plasma-ionengestütztes Beschichtungsverfahren und Plasmasonde |
| CN104941958A (zh) * | 2014-03-25 | 2015-09-30 | 中国科学院空间科学与应用研究中心 | 一种用于朗缪尔探针传感仪的在轨除污装置 |
| KR102222902B1 (ko) | 2014-05-12 | 2021-03-05 | 삼성전자주식회사 | 플라즈마 장비 및 이를 이용한 반도체 소자의 제조 방법 |
| KR20160022458A (ko) | 2014-08-19 | 2016-03-02 | 삼성전자주식회사 | 플라즈마 장비 및 이의 동작 방법 |
| US10969370B2 (en) * | 2015-06-05 | 2021-04-06 | Semilab Semiconductor Physics Laboratory Co., Ltd. | Measuring semiconductor doping using constant surface potential corona charging |
| RU2616853C1 (ru) * | 2015-11-16 | 2017-04-18 | федеральное государственное автономное образовательное учреждение высшего образования "Московский физико-технический институт (государственный университет)" | Датчик на основе эффекта Холла для измерения концентрации электронов в плазме |
| CZ2016537A3 (cs) * | 2016-09-05 | 2018-01-10 | Fyzikální ústav AV ČR, v.v.i. | Způsob diagnostiky plazmatu s vyloučením měření narušených nestabilitami a přechodovými jevy v plazmatu a zařízení k provádění tohoto způsobu |
| RU2648268C1 (ru) * | 2016-12-14 | 2018-03-23 | федеральное государственное бюджетное образовательное учреждение высшего образования "Санкт-Петербургский горный университет" | Способ определения параметров нейтральной и электронной компонент неравновесной плазмы |
| TWI620228B (zh) * | 2016-12-29 | 2018-04-01 | 財團法人工業技術研究院 | 電漿處理裝置與電漿處理方法 |
| CN111357077B (zh) * | 2017-11-16 | 2023-09-08 | 东京毅力科创株式会社 | 使用同步信号调制的等离子体加工系统 |
| CN109507489A (zh) * | 2018-10-18 | 2019-03-22 | 北京理工大学 | 一种用于低温等离子体电位诊断的探针系统 |
| CN111403056B (zh) * | 2020-03-31 | 2023-02-03 | 中国科学院合肥物质科学研究院 | 一种适用于磁约束等离子体的快电子测量探针系统 |
| CN112820618B (zh) * | 2020-12-14 | 2023-04-07 | 兰州空间技术物理研究所 | 一种微型溅射离子泵等离子体诊断装置及诊断方法 |
| CN112888128B (zh) * | 2021-01-18 | 2023-04-07 | 南昌大学 | 一种测量等离子体离子非广延参数的方法 |
| EP4177928B1 (en) * | 2021-11-09 | 2024-01-03 | Impedans Ltd | Two stage ion current measuring method in a device for analysis of plasma processes |
| CN114491382B (zh) * | 2022-02-14 | 2024-06-11 | 山东大学 | 一种用于获取等离子体参数的数据处理方法及系统 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007502519A (ja) * | 2003-08-14 | 2007-02-08 | オンウェハー テクノロジーズ インコーポレイテッド | プラズマプロセス環境におけるプラズマ特性測定用センサアレイ |
| JP2009532916A (ja) * | 2006-04-04 | 2009-09-10 | ラム リサーチ コーポレーション | Pifプロービング構成を用いるプラズマ処理の制御 |
| JP2009535855A (ja) * | 2006-05-01 | 2009-10-01 | ケーエルエー−テンカー・コーポレーション | シールドを備えるプロセス条件測定素子 |
| JP2009540569A (ja) * | 2006-06-07 | 2009-11-19 | ラム リサーチ コーポレーション | プラズマ処理反応器の故障状態を検出する方法及び装置 |
| US20100007362A1 (en) * | 2008-07-07 | 2010-01-14 | Jean-Paul Booth | Rf-biased capacitively-coupled electrostatic (rfb-cce) probe arrangement for characterizing a film in a plasma processing chamber |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4200636A1 (de) * | 1992-01-13 | 1993-07-15 | Fraunhofer Ges Forschung | Vorrichtung zur messung von plasmaparametern in hochfrequenzentladungen |
| FR2738984B1 (fr) | 1995-09-19 | 1997-11-21 | Centre Nat Rech Scient | Procede et dispositif de mesure d'un flux d'ions dans un plasma |
| US6830650B2 (en) * | 2002-07-12 | 2004-12-14 | Advanced Energy Industries, Inc. | Wafer probe for measuring plasma and surface characteristics in plasma processing environments |
| JP5281309B2 (ja) * | 2008-03-28 | 2013-09-04 | 東京エレクトロン株式会社 | プラズマエッチング装置及びプラズマエッチング方法及びコンピュータ読み取り可能な記憶媒体 |
-
2012
- 2012-05-04 US US13/464,679 patent/US20120283973A1/en not_active Abandoned
- 2012-05-07 EP EP12166974A patent/EP2521158A1/en not_active Withdrawn
- 2012-05-07 JP JP2012105802A patent/JP2012234817A/ja active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007502519A (ja) * | 2003-08-14 | 2007-02-08 | オンウェハー テクノロジーズ インコーポレイテッド | プラズマプロセス環境におけるプラズマ特性測定用センサアレイ |
| JP2009532916A (ja) * | 2006-04-04 | 2009-09-10 | ラム リサーチ コーポレーション | Pifプロービング構成を用いるプラズマ処理の制御 |
| JP2009535855A (ja) * | 2006-05-01 | 2009-10-01 | ケーエルエー−テンカー・コーポレーション | シールドを備えるプロセス条件測定素子 |
| JP2009540569A (ja) * | 2006-06-07 | 2009-11-19 | ラム リサーチ コーポレーション | プラズマ処理反応器の故障状態を検出する方法及び装置 |
| US20100007362A1 (en) * | 2008-07-07 | 2010-01-14 | Jean-Paul Booth | Rf-biased capacitively-coupled electrostatic (rfb-cce) probe arrangement for characterizing a film in a plasma processing chamber |
Non-Patent Citations (1)
| Title |
|---|
| JPN6016012015; M. C. Petcu: 'A capacitive probe with shaped probe bias for ion flux measurements in depositing plasmas' Rev Sci Instrum Vol.79 No.11, 200811, Page.115104 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018190486A1 (ko) * | 2017-04-14 | 2018-10-18 | 광운대학교 산학협력단 | 플라즈마 진단 시스템 및 방법 |
| US10964515B2 (en) | 2017-04-14 | 2021-03-30 | Kwangwoon University Industry-Academic Collaboration Foundation | Plasma diagnostic system and method |
| CN109752602A (zh) * | 2018-12-10 | 2019-05-14 | 兰州空间技术物理研究所 | 一种空间站电位检测仪静电荷清零方法及清零电路 |
| CN109752602B (zh) * | 2018-12-10 | 2021-02-02 | 兰州空间技术物理研究所 | 一种空间站电位检测仪静电荷清零方法及清零电路 |
| KR20240020790A (ko) * | 2022-08-09 | 2024-02-16 | 한양대학교 산학협력단 | 플라즈마 공정 모니터링 방법 및 플라즈마 공정 모니터링 장치 |
| KR102752788B1 (ko) * | 2022-08-09 | 2025-01-10 | 한양대학교 산학협력단 | 플라즈마 공정 모니터링 방법 및 플라즈마 공정 모니터링 장치 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20120283973A1 (en) | 2012-11-08 |
| EP2521158A1 (en) | 2012-11-07 |
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