JP2018514943A5 - - Google Patents
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- Publication number
- JP2018514943A5 JP2018514943A5 JP2017549291A JP2017549291A JP2018514943A5 JP 2018514943 A5 JP2018514943 A5 JP 2018514943A5 JP 2017549291 A JP2017549291 A JP 2017549291A JP 2017549291 A JP2017549291 A JP 2017549291A JP 2018514943 A5 JP2018514943 A5 JP 2018514943A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- temperature
- radical
- processing chamber
- radicals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 18
- 238000000034 method Methods 0.000 claims 8
- 238000010438 heat treatment Methods 0.000 claims 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- 229910052736 halogen Inorganic materials 0.000 claims 3
- 150000002367 halogens Chemical class 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 238000002347 injection Methods 0.000 claims 2
- 239000007924 injection Substances 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562135836P | 2015-03-20 | 2015-03-20 | |
| US62/135,836 | 2015-03-20 | ||
| PCT/US2016/019619 WO2016153716A1 (en) | 2015-03-20 | 2016-02-25 | An atomic layer process chamber for 3d conformal processing |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018514943A JP2018514943A (ja) | 2018-06-07 |
| JP2018514943A5 true JP2018514943A5 (cg-RX-API-DMAC7.html) | 2019-04-11 |
| JP6807860B2 JP6807860B2 (ja) | 2021-01-06 |
Family
ID=56925242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017549291A Active JP6807860B2 (ja) | 2015-03-20 | 2016-02-25 | ３ｄコンフォーマル処理用原子層処理チャンバ |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20160276162A1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP6807860B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR102494614B1 (cg-RX-API-DMAC7.html) |
| CN (2) | CN107431033B (cg-RX-API-DMAC7.html) |
| TW (1) | TWI691001B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2016153716A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10573532B2 (en) | 2018-06-15 | 2020-02-25 | Mattson Technology, Inc. | Method for processing a workpiece using a multi-cycle thermal treatment process |
| JP7065728B2 (ja) * | 2018-08-17 | 2022-05-12 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| JP7018849B2 (ja) * | 2018-08-17 | 2022-02-14 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01103840A (ja) * | 1987-10-16 | 1989-04-20 | Sanyo Electric Co Ltd | ドライエツチング方法 |
| US5024724A (en) * | 1987-03-27 | 1991-06-18 | Sanyo Electric Co., Ltd. | Dry-etching method |
| JPH01289121A (ja) * | 1988-05-16 | 1989-11-21 | Nec Corp | ３‐５族化合物半導体のデジタルエッチング方法 |
| JP3184988B2 (ja) * | 1991-12-10 | 2001-07-09 | 科学技術振興事業団 | 結晶面異方性ドライエッチング方法 |
| US6143082A (en) * | 1998-10-08 | 2000-11-07 | Novellus Systems, Inc. | Isolation of incompatible processes in a multi-station processing chamber |
| US6450116B1 (en) * | 1999-04-22 | 2002-09-17 | Applied Materials, Inc. | Apparatus for exposing a substrate to plasma radicals |
| US6303518B1 (en) * | 1999-09-30 | 2001-10-16 | Novellus Systems, Inc. | Methods to improve chemical vapor deposited fluorosilicate glass (FSG) film adhesion to metal barrier or etch stop/diffusion barrier layers |
| US6686298B1 (en) * | 2000-06-22 | 2004-02-03 | Micron Technology, Inc. | Methods of forming structures over semiconductor substrates, and methods of forming transistors associated with semiconductor substrates |
| KR20020083767A (ko) * | 2001-04-30 | 2002-11-04 | 주식회사 하이닉스반도체 | 선택적 에피택셜 성장 공정에서의 기판 세정 방법 |
| US7172792B2 (en) * | 2002-12-20 | 2007-02-06 | Applied Materials, Inc. | Method for forming a high quality low temperature silicon nitride film |
| US7056773B2 (en) * | 2004-04-28 | 2006-06-06 | International Business Machines Corporation | Backgated FinFET having different oxide thicknesses |
| US7629267B2 (en) * | 2005-03-07 | 2009-12-08 | Asm International N.V. | High stress nitride film and method for formation thereof |
| US20070281082A1 (en) * | 2006-06-02 | 2007-12-06 | Nima Mokhlesi | Flash Heating in Atomic Layer Deposition |
| US7416989B1 (en) * | 2006-06-30 | 2008-08-26 | Novellus Systems, Inc. | Adsorption based material removal process |
| US7837790B2 (en) * | 2006-12-01 | 2010-11-23 | Applied Materials, Inc. | Formation and treatment of epitaxial layer containing silicon and carbon |
| US7629275B2 (en) * | 2007-01-25 | 2009-12-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multiple-time flash anneal process |
| JP5209237B2 (ja) * | 2007-06-19 | 2013-06-12 | 大日本スクリーン製造株式会社 | 熱処理装置 |
| JP5226082B2 (ja) * | 2007-12-20 | 2013-07-03 | アプライド マテリアルズ インコーポレイテッド | ガス流分布が改善された熱反応器 |
| KR101800404B1 (ko) * | 2008-09-17 | 2017-11-22 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판의 어닐링시 열량 관리 |
| JP5564311B2 (ja) * | 2009-05-19 | 2014-07-30 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置及び基板の製造方法 |
| US8748259B2 (en) * | 2010-03-02 | 2014-06-10 | Applied Materials, Inc. | Method and apparatus for single step selective nitridation |
| US20130196078A1 (en) * | 2012-01-31 | 2013-08-01 | Joseph Yudovsky | Multi-Chamber Substrate Processing System |
| US20130344688A1 (en) * | 2012-06-20 | 2013-12-26 | Zhiyuan Ye | Atomic Layer Deposition with Rapid Thermal Treatment |
| CN107578983A (zh) * | 2013-03-15 | 2018-01-12 | 应用材料公司 | 用于脉冲式光激发沉积与蚀刻的装置与方法 |
| KR20160003831A (ko) * | 2013-04-30 | 2016-01-11 | 어플라이드 머티어리얼스, 인코포레이티드 | 공간적으로 분포된 가스 통로들을 갖는 유동 제어 라이너 |
| US9929014B2 (en) * | 2013-11-27 | 2018-03-27 | Entegris, Inc. | Dopant precursors for mono-layer doping |
| US9401273B2 (en) * | 2013-12-11 | 2016-07-26 | Asm Ip Holding B.V. | Atomic layer deposition of silicon carbon nitride based materials |
| US9425041B2 (en) * | 2015-01-06 | 2016-08-23 | Lam Research Corporation | Isotropic atomic layer etch for silicon oxides using no activation |
-
2016
- 2016-02-25 CN CN201680016568.XA patent/CN107431033B/zh active Active
- 2016-02-25 JP JP2017549291A patent/JP6807860B2/ja active Active
- 2016-02-25 CN CN202111142728.4A patent/CN113981414B/zh active Active
- 2016-02-25 WO PCT/US2016/019619 patent/WO2016153716A1/en not_active Ceased
- 2016-02-25 KR KR1020177030338A patent/KR102494614B1/ko active Active
- 2016-03-15 TW TW105107923A patent/TWI691001B/zh active
- 2016-03-16 US US15/071,479 patent/US20160276162A1/en not_active Abandoned
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