JP2018514397A5 - - Google Patents

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Publication number
JP2018514397A5
JP2018514397A5 JP2017547502A JP2017547502A JP2018514397A5 JP 2018514397 A5 JP2018514397 A5 JP 2018514397A5 JP 2017547502 A JP2017547502 A JP 2017547502A JP 2017547502 A JP2017547502 A JP 2017547502A JP 2018514397 A5 JP2018514397 A5 JP 2018514397A5
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JP
Japan
Prior art keywords
rotor
stator
protrusions
protrusion
electro mechanical
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JP2017547502A
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English (en)
Japanese (ja)
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JP2018514397A (ja
JP6627883B2 (ja
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Priority claimed from FI20155153A external-priority patent/FI127229B/en
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Publication of JP2018514397A5 publication Critical patent/JP2018514397A5/ja
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Publication of JP6627883B2 publication Critical patent/JP6627883B2/ja
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JP2017547502A 2015-03-09 2016-03-07 微小電気機械静電容量型センサの構造体およびデバイス Active JP6627883B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FI20155153A FI127229B (en) 2015-03-09 2015-03-09 Microelectromechanical structure and device
FI20155153 2015-03-09
PCT/IB2016/051265 WO2016142832A1 (en) 2015-03-09 2016-03-07 A microelectromechanical capacitive sensor structure and device

Publications (3)

Publication Number Publication Date
JP2018514397A JP2018514397A (ja) 2018-06-07
JP2018514397A5 true JP2018514397A5 (OSRAM) 2019-04-11
JP6627883B2 JP6627883B2 (ja) 2020-01-08

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ID=55588322

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JP2017547502A Active JP6627883B2 (ja) 2015-03-09 2016-03-07 微小電気機械静電容量型センサの構造体およびデバイス

Country Status (7)

Country Link
US (1) US9969606B2 (OSRAM)
EP (1) EP3268305B1 (OSRAM)
JP (1) JP6627883B2 (OSRAM)
CN (1) CN107406250B (OSRAM)
FI (1) FI127229B (OSRAM)
TW (1) TWI619668B (OSRAM)
WO (1) WO2016142832A1 (OSRAM)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017217009B3 (de) 2017-09-26 2018-07-19 Robert Bosch Gmbh MEMS-Vorrichtung sowie entsprechendes Betriebsverfahren
JP7056099B2 (ja) * 2017-11-28 2022-04-19 セイコーエプソン株式会社 物理量センサー、物理量センサーデバイス、複合センサーデバイス、慣性計測装置、移動体測位装置、携帯型電子機器、電子機器および移動体
US10712359B2 (en) * 2018-05-01 2020-07-14 Nxp Usa, Inc. Flexure with enhanced torsional stiffness and MEMS device incorporating same
US10794701B2 (en) 2018-05-01 2020-10-06 Nxp Usa, Inc. Inertial sensor with single proof mass and multiple sense axis capability
CN109490576A (zh) * 2018-12-19 2019-03-19 成都力创云科技有限公司 一种基于soi的全差分电容式mems加速度计
CN112014595B (zh) * 2019-05-30 2022-10-28 武汉杰开科技有限公司 加速度计及其制作方法
CN112014596B (zh) * 2019-05-30 2022-10-28 武汉杰开科技有限公司 加速度计及其制作方法
US12266552B2 (en) 2020-03-03 2025-04-01 Inficon, Inc. System and method for monitoring semiconductor processes
US11703521B2 (en) * 2020-12-04 2023-07-18 Honeywell International Inc. MEMS vibrating beam accelerometer with built-in test actuators
JP7389767B2 (ja) 2021-02-26 2023-11-30 株式会社東芝 センサ及び電子装置
EP4215478B1 (en) * 2022-01-25 2025-12-17 Murata Manufacturing Co., Ltd. Low-impact out-of-plane motion limiter for mems device

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3960502B2 (ja) * 1999-03-16 2007-08-15 学校法人立命館 静電容量型センサ
JP4063057B2 (ja) * 2002-11-20 2008-03-19 株式会社デンソー 容量式加速度センサ
CN101069099A (zh) 2003-02-24 2007-11-07 佛罗里达大学 微机械加工的集成单片三轴加速度计
US7469588B2 (en) 2006-05-16 2008-12-30 Honeywell International Inc. MEMS vertical comb drive with improved vibration performance
WO2008120256A1 (en) * 2007-04-03 2008-10-09 Stmicroelectronics S.R.L. Capacitive position sensing in an electrostatic micromotor
EP1998345A1 (en) 2007-05-31 2008-12-03 Infineon Technologies SensoNor AS Method of manufacturing capacitive elements for a capacitive device
US7690254B2 (en) 2007-07-26 2010-04-06 Honeywell International Inc. Sensor with position-independent drive electrodes in multi-layer silicon on insulator substrate
US20110018561A1 (en) * 2008-03-26 2011-01-27 Hewlett-Packard Company Capacitive sensor having cyclic and absolute electrode sets
JP2010286471A (ja) * 2009-05-15 2010-12-24 Seiko Epson Corp Memsセンサー、電子機器
CN101871952B (zh) * 2010-06-11 2012-07-11 瑞声声学科技(深圳)有限公司 Mems加速度传感器
AT11920U3 (de) 2010-08-12 2012-03-15 Oesterreichische Akademie Der Wissenschaften Verfahren zur herstellung einer mems-vorrichtung mit hohem aspektverhältnis, sowie wandler und kondensator
US20120048019A1 (en) * 2010-08-26 2012-03-01 Hanqin Zhou Highly sensitive capacitive sensor and methods of manufacturing the same
TWI616395B (zh) * 2012-01-12 2018-03-01 村田電子公司 加速度感測器結構和其之使用
US20130229747A1 (en) * 2012-03-01 2013-09-05 Agilent Technologies, Inc. Balanced voltage variable capacitor device
EP2861524A4 (en) 2012-06-13 2016-07-06 Purdue Research Foundation Microelectronicsystem and method of use
JP5783201B2 (ja) * 2013-03-27 2015-09-24 株式会社デンソー 容量式物理量センサ
FI126199B (en) * 2013-06-28 2016-08-15 Murata Manufacturing Co CAPACITIVE MICROMECHANICAL SENSOR STRUCTURE AND MICROMECHANICAL ACCELERATOR SENSOR
CN203631322U (zh) * 2013-12-25 2014-06-04 歌尔声学股份有限公司 一种电容器及包括该电容器的电容式传感器

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