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JPH0758759B2
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1989-03-27 |
1995-06-21 |
日本電信電話株式会社 |
半導体装置
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1995-12-18 |
1996-11-26 |
Motorola, Inc. |
Vertical MOSFET device having frontside and backside contacts
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1997-10-03 |
2000-10-03 |
Delco Electronics Corporation |
Vertical power device with integrated control circuitry
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JP3641547B2
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1998-03-25 |
2005-04-20 |
株式会社豊田中央研究所 |
横型mos素子を含む半導体装置
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1999-04-23 |
2000-10-25 |
STMicroelectronics S.r.l. |
Method for producing devices for control circuits integrated in power devices
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DE10202479A1
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2002-01-23 |
2003-08-07 |
Infineon Technologies Ag |
Integrierte Schaltungsanordnung mit einer Struktur zur Verringerung eines Minoritätsladungsträgerstromes
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2002-09-25 |
2005-03-30 |
株式会社東芝 |
電力用半導体素子
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2004-08-06 |
2006-02-16 |
Matsushita Electric Ind Co Ltd |
半導体装置及びその製造方法
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2004-11-08 |
2006-05-11 |
Encesys Limited |
Integrated circuits and power supplies
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2005-02-28 |
2012-04-26 |
Infineon Technologies Austria Ag |
Verfahren zur Erzeugung eines Leistungstransistors und damit erzeugbare integrierte Schaltungsanordnung
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2005-03-22 |
2007-03-27 |
Micrel, Inc. |
Schottky diode device with aluminum pickup of backside cathode
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2006-03-22 |
2012-07-11 |
株式会社豊田中央研究所 |
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2006-12-06 |
2013-06-19 |
株式会社デンソー |
半導体装置
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2007-04-13 |
2013-04-23 |
Advanced Analogic Technologies, Inc. |
Power-MOSFETs with improved efficiency for multi-channel class-D audio amplifiers and packaging thereof
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2007-11-06 |
2011-03-22 |
Denso Corporation |
Semiconductor apparatus including a double-sided electrode element and method for manufacturing the same
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2007-11-06 |
2011-04-27 |
株式会社デンソー |
半導体装置及びその製造方法
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2007-11-20 |
2011-07-27 |
株式会社デンソー |
Soi基板を用いた半導体装置
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2008-12-15 |
2010-06-24 |
Mitsumi Electric Co Ltd |
半導体装置
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2009-12-10 |
2011-06-16 |
Robert Bosch Gmbh |
Hochstromkontaktierung und korrespondierendes Verfahren zur Herstellung einer Hochstromkontaktieranordnung
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2010-12-23 |
2015-07-28 |
Alpha And Omega Semiconductor Incorporated |
Monolithic IGBT and diode structure for quai-resonant converters
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2010-12-23 |
2013-08-06 |
Alpha And Omega Semiconductor Incorporated |
Monolithic IGBT and diode structure for quasi-resonant converters
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2011-03-16 |
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Infineon Technologies Austria Ag |
Power semiconductor device
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2011-04-14 |
2012-10-03 |
中北大学 |
一种psoi横向超结功率半导体器件
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2011-06-09 |
2016-08-02 |
ルネサスエレクトロニクス株式会社 |
半導体装置及び半導体装置の製造方法
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2011-06-09 |
2012-12-13 |
トヨタ自動車株式会社 |
半導体装置および半導体装置の製造方法
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2011-08-09 |
2014-03-25 |
Infineon Technologies Austria Ag |
Semiconductor device and a method for forming a semiconductor device
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2011-08-12 |
2016-09-28 |
ルネサスエレクトロニクス株式会社 |
パワーmosfet、igbtおよびパワーダイオード
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2011-10-28 |
2015-08-25 |
Texas Instruments Incorporated |
High voltage CMOS with triple gate oxide
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2012-03-26 |
2015-01-27 |
Infineon Technologies Austria Ag |
Semiconductor arrangement with a superjunction transistor and a further device integrated in a common semiconductor body
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2012-05-16 |
2013-12-17 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Semiconductor device with self-aligned interconnects
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2013-03-07 |
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一种半导体装置及其制造方法
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2013-06-25 |
2015-11-10 |
Cree, Inc. |
Vertical power transistor with built-in gate buffer
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2013-07-05 |
2016-09-14 |
富士電機株式会社 |
半導体装置
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2013-12-19 |
2016-05-10 |
Infineon Technologies Ag |
Semiconductor devices
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