JP2018509758A - 発光素子パッケージ及び照明装置 - Google Patents
発光素子パッケージ及び照明装置 Download PDFInfo
- Publication number
- JP2018509758A JP2018509758A JP2017543339A JP2017543339A JP2018509758A JP 2018509758 A JP2018509758 A JP 2018509758A JP 2017543339 A JP2017543339 A JP 2017543339A JP 2017543339 A JP2017543339 A JP 2017543339A JP 2018509758 A JP2018509758 A JP 2018509758A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- layer
- semiconductor layer
- emitting device
- disposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 152
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000004642 Polyimide Substances 0.000 claims description 10
- 229920001721 polyimide Polymers 0.000 claims description 10
- 238000005286 illumination Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 304
- 239000000463 material Substances 0.000 description 26
- 229910004298 SiO 2 Inorganic materials 0.000 description 14
- 238000000034 method Methods 0.000 description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 13
- 229910000679 solder Inorganic materials 0.000 description 13
- 239000002019 doping agent Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 10
- 239000010931 gold Substances 0.000 description 9
- 229910052709 silver Inorganic materials 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 229910002704 AlGaN Inorganic materials 0.000 description 6
- 229910052791 calcium Inorganic materials 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 239000010948 rhodium Substances 0.000 description 6
- 230000007480 spreading Effects 0.000 description 6
- 238000003892 spreading Methods 0.000 description 6
- 229910052712 strontium Inorganic materials 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 229910052725 zinc Inorganic materials 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 4
- 229910052788 barium Inorganic materials 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 238000005253 cladding Methods 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000002096 quantum dot Substances 0.000 description 4
- 229910052703 rhodium Inorganic materials 0.000 description 4
- 239000010944 silver (metal) Substances 0.000 description 4
- 239000011135 tin Substances 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 239000012811 non-conductive material Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 229910052693 Europium Inorganic materials 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 229910019897 RuOx Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910003564 SiAlON Inorganic materials 0.000 description 1
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- AOIFZSXPSAQABB-UHFFFAOYSA-N [In].[Zn].[In] Chemical compound [In].[Zn].[In] AOIFZSXPSAQABB-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000000383 hazardous chemical Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
Description
発明の実施のための形態
Claims (20)
- 基板;
前記基板の下側に配置され、第1導電型半導体層、活性層及び第2導電型半導体層を含む発光構造物;
前記活性層と前記第2導電型半導体層を貫いて前記第1導電型半導体層を露出させる貫通ホールに埋め込まれ、前記第1導電型半導体層と連結された第1ボンディングパッド;
前記第1ボンディングパッドから離隔して前記第2導電型半導体層の下側に配置され、前記第2導電型半導体層と連結された第2ボンディングパッド;
前記貫通ホールにおいて前記発光構造物の側部及び前記発光構造物の内側下部縁部に配置された第1絶縁層;及び
前記貫通ホールにおいて前記第1絶縁層と前記第1ボンディングパッドの間に配置された第2絶縁層を含む、発光素子パッケージ。 - 前記第1絶縁層は、
貫通ホールにおいて前記発光構造物の側部に配置された第1セグメント;及び
前記第1セグメントから前記発光構造物の厚さ方向と交差する第1方向に延びて前記発光構造物の前記内側下部縁部に配置された第2セグメントを含む、請求項1に記載の発光素子パッケージ。 - 前記第1絶縁層は、活性層の下側で前記第1セグメントから前記第1方向に前記第2導電型半導体層の内部に延びて配置された少なくとも一つの第3セグメントをさらに含む、請求項2に記載の発光素子パッケージ。
- 前記第1絶縁層は、発光構造物の外側部及び外側下部縁部にそれぞれ配置された第4セグメントをさらに含む、請求項3に記載の発光素子パッケージ。
- 前記貫通ホールから露出された前記第1導電型半導体層と前記第1ボンディングパッドの間に配置された第1電極をさらに含む、請求項1に記載の発光素子パッケージ。
- 前記第2絶縁層は前記第1電極と前記第1絶縁層の間まで延びて配置された、請求項5に記載の発光素子パッケージ。
- 前記第2導電型半導体層と前記第2ボンディングパッドの間に配置された第2電極をさらに含む、請求項4に記載の発光素子パッケージ。
- 前記第2電極は、
前記第2導電型半導体層の下側に配置された反射層;及び
前記反射層と前記第2導電型半導体層の間に配置された透光電極層を含む、請求項7に記載の発光素子パッケージ。 - 前記第1絶縁層の前記第2セグメントは前記透光電極層と前記第2導電型半導体層の前記内側下部縁部の間に配置され、前記第4セグメントは前記透光電極層と前記外側下部縁部の間に配置された、請求項8に記載の発光素子パッケージ。
- 前記第2電極は、前記第2導電型半導体層の下側に配置された反射層を含む、請求項7に記載の発光素子パッケージ。
- 前記第1絶縁層の前記第2セグメントは前記反射層と前記第2導電型半導体層の前記内側下部縁部に配置され、前記第4セグメントは前記反射層と前記外側下部縁部の間に配置された、請求項10に記載の発光素子パッケージ。
- 前記第2電極は、前記第2導電型半導体層の下側に配置された透光電極層を含む、請求項7に記載の発光素子パッケージ。
- 前記第1絶縁層の前記第2セグメントは前記透光電極層と前記第2導電型半導体層の前記内側下部縁部の間に配置され、前記第4セグメントは前記透光電極層と前記外側下部縁部の間に配置された、請求項12に記載の発光素子パッケージ。
- 前記第3セグメントが配置される前記第2導電型半導体層の内部は、前記第2導電型半導体層の上部、下部又は中間部の中で少なくとも一つを含む、請求項3に記載の発光素子パッケージ。
- 前記第2又は第4セグメントの前記第1方向への長さは20μm〜30μmである、請求項4に記載の発光素子パッケージ。
- 前記第1ボンディングパッドと前記第2ボンディングパッドの前記第1方向への幅の比率は9:1又は8:2である、請求項1に記載の発光素子パッケージ。
- 前記第1又は第2絶縁層の中で少なくとも一つは感光性ポリイミドを含む、請求項1に記載の発光素子パッケージ。
- 前記発光素子パッケージは、前記第1及び第2ボンディングパッドとそれぞれ連結された第1及び第2リードフレームをさらに含む、請求項1に記載の発光素子パッケージ。
- 前記少なくとも一つの第3セグメントは、前記第1セグメントから互いに平行に離隔して第1方向に延びた複数の第3セグメントを含む、請求項3に記載の発光素子パッケージ。
- 請求項1〜19のいずれか一項に記載の前記発光素子パッケージを含む、照明装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2015-0042659 | 2015-03-26 | ||
KR1020150042659A KR102434778B1 (ko) | 2015-03-26 | 2015-03-26 | 발광 소자 패키지 |
PCT/KR2016/002612 WO2016153213A1 (ko) | 2015-03-26 | 2016-03-16 | 발광 소자 패키지 및 조명 장치 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2018509758A true JP2018509758A (ja) | 2018-04-05 |
JP2018509758A5 JP2018509758A5 (ja) | 2019-04-25 |
JP6811715B2 JP6811715B2 (ja) | 2021-01-13 |
Family
ID=56977599
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017543339A Active JP6811715B2 (ja) | 2015-03-26 | 2016-03-16 | 発光素子パッケージ及び照明装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10381519B2 (ja) |
EP (1) | EP3276683B1 (ja) |
JP (1) | JP6811715B2 (ja) |
KR (1) | KR102434778B1 (ja) |
CN (1) | CN107431103A (ja) |
WO (1) | WO2016153213A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020504908A (ja) * | 2017-01-25 | 2020-02-13 | エルジー イノテック カンパニー リミテッド | 半導体素子 |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180073866A (ko) | 2016-12-23 | 2018-07-03 | 엘지이노텍 주식회사 | 반도체 소자 |
KR102308692B1 (ko) * | 2017-03-30 | 2021-10-05 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 및 그 제조방법, 반도체 소자 패키지, 객체 검출 장치 |
KR102327777B1 (ko) * | 2017-03-30 | 2021-11-17 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자, 반도체 소자 패키지, 객체 검출 장치 |
KR102311599B1 (ko) * | 2017-03-30 | 2021-10-12 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 및 그 제조방법, 반도체 소자 패키지 |
CN110651404B (zh) * | 2017-05-19 | 2021-04-23 | Lg 伊诺特有限公司 | 激光二极管 |
US10892297B2 (en) | 2017-11-27 | 2021-01-12 | Seoul Viosys Co., Ltd. | Light emitting diode (LED) stack for a display |
US10892296B2 (en) * | 2017-11-27 | 2021-01-12 | Seoul Viosys Co., Ltd. | Light emitting device having commonly connected LED sub-units |
US11527519B2 (en) | 2017-11-27 | 2022-12-13 | Seoul Viosys Co., Ltd. | LED unit for display and display apparatus having the same |
US11282981B2 (en) | 2017-11-27 | 2022-03-22 | Seoul Viosys Co., Ltd. | Passivation covered light emitting unit stack |
US10748881B2 (en) | 2017-12-05 | 2020-08-18 | Seoul Viosys Co., Ltd. | Light emitting device with LED stack for display and display apparatus having the same |
US10886327B2 (en) | 2017-12-14 | 2021-01-05 | Seoul Viosys Co., Ltd. | Light emitting stacked structure and display device having the same |
US11552057B2 (en) | 2017-12-20 | 2023-01-10 | Seoul Viosys Co., Ltd. | LED unit for display and display apparatus having the same |
US11522006B2 (en) | 2017-12-21 | 2022-12-06 | Seoul Viosys Co., Ltd. | Light emitting stacked structure and display device having the same |
US11552061B2 (en) | 2017-12-22 | 2023-01-10 | Seoul Viosys Co., Ltd. | Light emitting device with LED stack for display and display apparatus having the same |
US11114499B2 (en) | 2018-01-02 | 2021-09-07 | Seoul Viosys Co., Ltd. | Display device having light emitting stacked structure |
US10784240B2 (en) | 2018-01-03 | 2020-09-22 | Seoul Viosys Co., Ltd. | Light emitting device with LED stack for display and display apparatus having the same |
CN111063778A (zh) * | 2018-10-16 | 2020-04-24 | 合肥彩虹蓝光科技有限公司 | 一种发光二极管结构 |
KR102093816B1 (ko) * | 2019-02-19 | 2020-03-26 | 엘지이노텍 주식회사 | 반도체 소자 |
CN109904285B (zh) * | 2019-03-11 | 2022-04-05 | 合肥彩虹蓝光科技有限公司 | 一种发光二极管芯片及其制造方法 |
KR102212952B1 (ko) * | 2019-05-07 | 2021-02-08 | 엘지이노텍 주식회사 | 반도체 소자 |
CN110931619A (zh) * | 2019-11-20 | 2020-03-27 | 厦门士兰明镓化合物半导体有限公司 | 倒装led芯片及其制造方法 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003124514A (ja) * | 2001-10-17 | 2003-04-25 | Sony Corp | 半導体発光素子及びその製造方法 |
JP2010171142A (ja) * | 2009-01-21 | 2010-08-05 | Toshiba Corp | 半導体発光素子及び半導体発光装置 |
US20110012164A1 (en) * | 2009-07-20 | 2011-01-20 | Yu-Sik Kim | Light-emitting element and method of fabricating the same |
KR20110093480A (ko) * | 2010-02-12 | 2011-08-18 | 엘지이노텍 주식회사 | 발광소자, 발광소자의 제조방법 및 발광소자 패키지 |
US20120074441A1 (en) * | 2010-09-24 | 2012-03-29 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
US20130221398A1 (en) * | 2012-02-24 | 2013-08-29 | Samsung Electronics Co., Ltd. | Semiconductor light emitting device and fabrication method thereof |
US20140209955A1 (en) * | 2013-01-29 | 2014-07-31 | Samsung Electronics Co., Ltd. | Semiconductor light-emitting device |
JP2014150245A (ja) * | 2013-01-08 | 2014-08-21 | Rohm Co Ltd | 発光素子および発光素子パッケージ |
US20140312369A1 (en) * | 2013-04-19 | 2014-10-23 | Samsung Electronics Co., Ltd. | Semiconductor light emitting device |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006245156A (ja) | 2005-03-02 | 2006-09-14 | Ledarts Opto Corp | フリップチップ構造を具えた発光ダイオード装置 |
KR100609118B1 (ko) | 2005-05-03 | 2006-08-08 | 삼성전기주식회사 | 플립 칩 발광다이오드 및 그 제조방법 |
JP4359263B2 (ja) | 2005-05-18 | 2009-11-04 | ローム株式会社 | 半導体発光装置 |
KR100668964B1 (ko) * | 2005-09-27 | 2007-01-12 | 엘지전자 주식회사 | 나노 홈을 갖는 발광 소자 및 그의 제조 방법 |
EP2023412A1 (en) | 2006-05-02 | 2009-02-11 | Mitsubishi Chemical Corporation | Semiconductor light-emitting device |
US8368100B2 (en) * | 2007-11-14 | 2013-02-05 | Cree, Inc. | Semiconductor light emitting diodes having reflective structures and methods of fabricating same |
JP5449786B2 (ja) * | 2009-01-15 | 2014-03-19 | 昭和電工株式会社 | 炭化珪素半導体装置及び炭化珪素半導体装置の製造方法 |
JP5152133B2 (ja) | 2009-09-18 | 2013-02-27 | 豊田合成株式会社 | 発光素子 |
KR101630152B1 (ko) | 2010-02-24 | 2016-06-14 | 엘지디스플레이 주식회사 | 하이브리드 발광다이오드 칩과 이를 포함하는 발광다이오드 소자 및 이의 제조방법 |
KR101142965B1 (ko) * | 2010-09-24 | 2012-05-08 | 서울반도체 주식회사 | 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법 |
JP5754173B2 (ja) | 2011-03-01 | 2015-07-29 | ソニー株式会社 | 発光ユニットおよび表示装置 |
KR101362081B1 (ko) * | 2012-12-28 | 2014-02-13 | 주식회사 위뷰 | 발광 소자 |
-
2015
- 2015-03-26 KR KR1020150042659A patent/KR102434778B1/ko active IP Right Grant
-
2016
- 2016-03-16 JP JP2017543339A patent/JP6811715B2/ja active Active
- 2016-03-16 WO PCT/KR2016/002612 patent/WO2016153213A1/ko active Application Filing
- 2016-03-16 CN CN201680016088.3A patent/CN107431103A/zh active Pending
- 2016-03-16 EP EP16769031.2A patent/EP3276683B1/en active Active
- 2016-03-16 US US15/550,955 patent/US10381519B2/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003124514A (ja) * | 2001-10-17 | 2003-04-25 | Sony Corp | 半導体発光素子及びその製造方法 |
JP2010171142A (ja) * | 2009-01-21 | 2010-08-05 | Toshiba Corp | 半導体発光素子及び半導体発光装置 |
US20110012164A1 (en) * | 2009-07-20 | 2011-01-20 | Yu-Sik Kim | Light-emitting element and method of fabricating the same |
KR20110093480A (ko) * | 2010-02-12 | 2011-08-18 | 엘지이노텍 주식회사 | 발광소자, 발광소자의 제조방법 및 발광소자 패키지 |
US20120074441A1 (en) * | 2010-09-24 | 2012-03-29 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
US20130221398A1 (en) * | 2012-02-24 | 2013-08-29 | Samsung Electronics Co., Ltd. | Semiconductor light emitting device and fabrication method thereof |
JP2014150245A (ja) * | 2013-01-08 | 2014-08-21 | Rohm Co Ltd | 発光素子および発光素子パッケージ |
US20140209955A1 (en) * | 2013-01-29 | 2014-07-31 | Samsung Electronics Co., Ltd. | Semiconductor light-emitting device |
US20140312369A1 (en) * | 2013-04-19 | 2014-10-23 | Samsung Electronics Co., Ltd. | Semiconductor light emitting device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020504908A (ja) * | 2017-01-25 | 2020-02-13 | エルジー イノテック カンパニー リミテッド | 半導体素子 |
US11637227B2 (en) | 2017-01-25 | 2023-04-25 | Suzhou Lekin Semiconductor Co., Ltd. | Semiconductor device including multiple distributed bragg reflector layers |
Also Published As
Publication number | Publication date |
---|---|
EP3276683B1 (en) | 2020-03-11 |
EP3276683A4 (en) | 2018-09-12 |
JP6811715B2 (ja) | 2021-01-13 |
KR102434778B1 (ko) | 2022-08-23 |
WO2016153213A1 (ko) | 2016-09-29 |
US10381519B2 (en) | 2019-08-13 |
EP3276683A1 (en) | 2018-01-31 |
CN107431103A (zh) | 2017-12-01 |
KR20160115301A (ko) | 2016-10-06 |
US20180026163A1 (en) | 2018-01-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6811715B2 (ja) | 発光素子パッケージ及び照明装置 | |
JP6712474B2 (ja) | 発光素子及びこれを含む発光素子パッケージ | |
JP6783048B2 (ja) | 発光素子パッケージ及びそれを含む照明装置 | |
KR102038443B1 (ko) | 발광 소자 및 발광 소자 패키지 | |
JP6796078B2 (ja) | 発光素子及び発光素子パッケージ | |
US10892390B2 (en) | Light-emitting element and light-emitting element package including the same | |
KR101669122B1 (ko) | 발광 소자 패키지 | |
KR20170011138A (ko) | 발광 소자 | |
KR102569249B1 (ko) | 발광 소자 패키지 | |
KR102137750B1 (ko) | 발광 소자 | |
KR102464028B1 (ko) | 발광 소자 패키지 및 이를 포함하는 발광 장치 | |
KR102408617B1 (ko) | 발광 소자 패키지 및 이를 포함하는 발광 장치 | |
KR102455091B1 (ko) | 발광 소자 및 이를 포함하는 발광 소자 패키지 | |
KR102445547B1 (ko) | 발광 소자 및 이를 포함하는 발광 소자 패키지 | |
KR102320866B1 (ko) | 발광 소자 및 발광 소자 패키지 | |
KR102343497B1 (ko) | 발광 소자 및 이를 포함하는 발광 소자 패키지 | |
KR102268107B1 (ko) | 발광 소자 | |
KR101977281B1 (ko) | 발광 소자 패키지 및 조명 장치 | |
KR101941034B1 (ko) | 발광 소자 패키지 및 조명 장치 | |
KR102326926B1 (ko) | 발광 소자 및 발광 소자 패키지 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170927 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190313 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190313 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200228 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200407 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200706 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20201208 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20201215 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6811715 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |