JP2018200956A - 受光素子および受光装置 - Google Patents

受光素子および受光装置 Download PDF

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Publication number
JP2018200956A
JP2018200956A JP2017104950A JP2017104950A JP2018200956A JP 2018200956 A JP2018200956 A JP 2018200956A JP 2017104950 A JP2017104950 A JP 2017104950A JP 2017104950 A JP2017104950 A JP 2017104950A JP 2018200956 A JP2018200956 A JP 2018200956A
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Prior art keywords
layer
bump
light receiving
electrode
receiving element
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JP2017104950A
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JP6834785B2 (ja
Inventor
大資 木村
Daishi Kimura
大資 木村
博史 稲田
Hiroshi Inada
博史 稲田
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Priority to JP2017104950A priority Critical patent/JP6834785B2/ja
Priority to US15/961,064 priority patent/US10319778B2/en
Publication of JP2018200956A publication Critical patent/JP2018200956A/ja
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Abstract

【課題】応力による破損および大型化を抑制することが可能な受光素子および受光装置を提供する。【解決手段】受光素子１００は、半導体基板１０と、第１の導電型の第１層１２、光吸収層１４、第２の導電型の第２層１６、第２の導電型の第３層１８を含み、複数のメサ１３、テラス１５と溝１７が形成された半導体層１１と、メサ１３上の第３層１８と電気的に接続された第１電極２２と、第１電極２２上の、第１電極２２と電気的に接続された第１バンプ２６と、テラス１５上から溝１７の内側にかけて設けられ、第１層１２と電気的に接続された第２電極２４と、第１バンプ２６よりも大きな寸法を有し、テラス１５上の第２電極２４と電気的に接続された第２バンプ２８と、を具備する。メサ１３とテラス１５は、第１層１２、光吸収層１４、第２層１６と第３層１８を含み、溝１７は第１層１２まで達し、第２電極２４は溝１７の内側で第１層１２と接触する。【選択図】図１

Description

本発明は受光素子および受光装置に関するものである。
赤外光を受光して例えば画像情報などを生成する受光素子が知られている（例えば特許文献１および非特許文献１）。受光素子から電気信号を読み出す回路を基板に形成し、基板と受光素子とをバンプにより電気的に接続することで受光装置を形成する。
特開平８−１３９２９９号公報
猪口康博、外７名、「低ノイズ・広帯域の近赤外２次元センサ開発」、ＳＥＩテクニカルレビュー・第１８２号、２０１３年１月、ｐ．１０３〜１０６
高いＳ／Ｎ比を得るため低温において受光装置を使用することがある。しかし、受光素子および基板それぞれの熱膨張係数が異なるため、温度変化によって受光素子には応力（サーマルストレス）が加わる。こうした応力により受光装置が破損することがある。そこで、応力を緩和するため、受光素子に多くのバンプを設けることがある。しかし、受光素子が大型化してしまう。
そこで、応力による破損および大型化を抑制することが可能な受光素子および受光装置を提供することを目的とする。
本発明に係る受光素子は、化合物半導体で形成された半導体基板と、前記半導体基板の上に設けられた第１の導電型の第１層、前記第１層の上に設けられた光吸収層、前記光吸収層の上に設けられた第２の導電型の第２層、および前記第２層の上に設けられた前記第２の導電型の第３層を含み、前記半導体基板の中央側から外周側にかけて複数のメサ、テラスおよび溝が形成された半導体層と、前記メサの上に設けられ、前記第３層と電気的に接続された第１電極と、前記第１電極の上に設けられ、前記第１電極と電気的に接続された第１バンプと、前記テラスの上から前記溝の内側にかけて設けられ、前記第１層と電気的に接続された第２電極と、前記第１バンプよりも大きな寸法を有し、前記テラスの上に設けられ、前記第２電極と電気的に接続された第２バンプと、を具備し、前記メサおよび前記テラスは、前記第１層、前記光吸収層、前記第２層および前記第３層を含み、前記溝は前記第１層まで到達し、前記第２電極は前記溝の内側において前記第１層と接触するものである。
上記発明によれば、応力による破損および大型化を抑制することが可能である。
図１（ａ）は第１実施形態に係る受光素子を例示する平面図である。図１（ｂ）は図１（ａ）の線Ａ−Ａに沿った断面図である。 図２は受光装置を例示する断面図である。 図３（ａ）から図３（ｄ）は受光素子の製造方法を例示する断面図である。 図４（ａ）から図４（ｃ）は受光素子の製造方法を例示する断面図である。 図５（ａ）から図５（ｃ）は受光素子の製造方法を例示する断面図である。 図６（ａ）は比較例に係る受光素子を例示する平面図である。図６（ｂ）は比較例に係る受光装置を例示する断面図である。 図７（ａ）は第２実施形態に係る受光素子を例示する平面図である。図７（ｂ）は受光装置を例示する断面図である。 図８は第３実施形態に係る受光素子を例示する平面図である。 図９は第４実施形態に係る受光素子を例示する平面図である。
[本願発明の実施形態の説明]
最初に本願発明の実施形態の内容を列記して説明する。
本願発明の一形態は、（１）化合物半導体で形成された半導体基板と、前記半導体基板の上に設けられた第１の導電型の第１層、前記第１層の上に設けられた光吸収層、前記光吸収層の上に設けられた第２の導電型の第２層、および前記第２層の上に設けられた前記第２の導電型の第３層を含み、前記半導体基板の中央側から外周側にかけて複数のメサ、テラスおよび溝が形成された半導体層と、前記メサの上に設けられ、前記第３層と電気的に接続された第１電極と、前記第１電極の上に設けられ、前記第１電極と電気的に接続された第１バンプと、前記テラスの上から前記溝の内側にかけて設けられ、前記第１層と電気的に接続された第２電極と、前記第１バンプよりも大きな寸法を有し、前記テラスの上に設けられ、前記第２電極と電気的に接続された第２バンプと、を具備し、前記メサおよび前記テラスは、前記第１層、前記光吸収層、前記第２層および前記第３層を含み、前記溝は前記第１層まで到達し、前記第２電極は前記溝の内側において前記第１層と接触する受光素子である。第２バンプと第２電極との接触面積が大きく、接合強度が高い。このため第２バンプの第２電極からの剥離が抑制される。また第２バンプに比べて、第１バンプに加わる応力は小さい。このように、応力による受光素子の破損が抑制される。また、多数の補強用バンプを設けなくてよいため、受光素子の大型化が抑制される。
（２）前記半導体基板が広がる方向における前記第２バンプの面積は前記第１バンプの面積の４倍以上でもよい。第２バンプと第２電極との整合強度が向上するため、第２バンプの第２電極からの剥離が効果的に抑制される。
（３）前記第２バンプは、前記テラスの上から前記溝の内側にかけて設けられ、前記第２電極の表面を覆うとしてもよい。テラスの側面において第２バンプが第２電極を覆うため、第２電極の断線が抑制される。
（４）前記メサおよび前記テラスそれぞれの上面および側面を覆う絶縁膜を具備し、前記絶縁膜は前記メサの上において第１開口部を有し、かつ前記溝の内側において第２開口部を有し、前記第１電極は、前記第１開口部から露出する前記第３層と接触し、前記第２電極は、前記第２開口部から露出する前記第１層と接触してもよい。絶縁膜により、第２電極と光吸収層および第２層とは絶縁される。また絶縁膜により半導体層を保護することができる。
（５）前記第２バンプはリング形状を有し、前記半導体層のうち前記複数のメサが設けられた領域を囲んでもよい。第２バンプが広い領域に設けられることで第２バンプと第２電極との接合強度が強くなり、第２バンプの剥離が効果的に抑制される。また応力による受光素子の破損および受光素子の大型化が抑制される。
（６）前記第２バンプは、前記半導体基板の少なくとも二辺に沿う形状を有し、複数の前記第２バンプは互いに離間し、それぞれが四隅に位置する四角形を形成してもよい。これにより、応力による受光素子の破損および受光素子の大型化が抑制される。
（７）４つの柱状の前記第２バンプは、それぞれが四隅に位置する四角形を形成してもよい。これにより、応力による受光素子の破損および受光素子の大型化が抑制される。
（８）前記半導体基板はガリウムアンチモンで形成されてもよい。ガリウムアンチモンの熱膨張係数は大きいため、半導体基板が大きく変形し、応力が増大する。第２バンプの幅が大きいため、第２のバンプの剥離を抑制することができ、また応力による受光素子の破損を抑制することができる。
（９）前記第１層はｎ型超格子層であり、前記第２層はｐ型超格子層でもよい。第１層に接続される第２電極および第２バンプはｎ型の導電型を有し、第３層に接続される第１電極および第１バンプはｐ型の導電型を有する。
（１０）上記の受光素子と、シリコン基板と、を具備し、前記受光素子は、前記第１バンプおよび前記第２バンプにより前記シリコン基板と電気的に接続される受光装置である。応力による受光装置の破損が抑制される。また、多数の補強用バンプを設けなくてよいため、受光装置の大型化が抑制される。さらに、シリコン基板の損傷が抑制される。
［本願発明の実施形態の詳細］
本発明の実施形態に係る受光素子および受光装置の具体例を、以下に図面を参照しつつ説明する。なお、本発明はこれらの例示に限定されるものではなく、特許請求の範囲によって示され、特許請求の範囲と均等の意味および範囲内でのすべての変更が含まれることが意図される。
（第１実施形態）
図１（ａ）は第１実施形態に係る受光素子１００を例示する平面図である。図１（ｂ）は図１（ａ）の線Ａ−Ａに沿った断面図である。図中の黒点は複数のメサ１３などが設けられていることを示す。
（受光素子１００）
図１（ａ）に示すように受光素子１００は矩形のチップであり、一辺は例えば５ｍｍ以上、２０ｍｍ以下である。図１（ｂ）に示すように、受光素子１００は、半導体基板１０と半導体層１１とを備える。半導体基板は、例えば厚さ５００μｍ以上、７００μｍ以下のｎ型ガリウムアンチモン（ＧａＳｂ）により形成されている。半導体層１１は、半導体基板１０に近い方から順に、ｎ型半導体層１２（第１層）、光吸収層１４、ｐ型半導体層１６（第２層）、およびｐ型コンタクト層１８（第３層）を積層したものである。ｎ型半導体層１２と半導体基板１０との間に例えばＧａＳｂからなるバッファ層を設けてもよい。半導体基板１０の下面に、光の反射を防止する反射防止膜を設けてもよい。
ｎ型半導体層１２は、例えばＧａＳｂ層とインジウム砒素層とを積層し、シリコン（Ｓｉ）をドープしたｎ型ＧａＳｂ／ＩｎＡｓ超格子構造を有し、厚さは例えば１〜２μｍである。光吸収層１４は、例えばＧａＳｂ／ＩｎＡｓ超格子構造を有し、厚さは例えば０．８〜２μｍである。ｐ型半導体層１６は、例えばベリリウム（Ｂｅ）をドープしたｐ型ＧａＳｂ／ＩｎＡｓ超格子構造を有し、厚さは例えば０．２〜０．６μｍである。超格子構造はタイプＩＩのバンド構造を有している。ｐ型コンタクト層１８は例えばｐ型ＧａＳｂで形成され、厚さは例えば０．０５〜０．３μｍである。
ｎ型半導体層１２、ｐ型半導体層１６およびｐ型コンタクト層１８は赤外光に対して高い透過率（例えば９０％以上）を有し、赤外光を透過させる。光吸収層１４は、例えば波長３〜１５μｍなどの赤外光を吸収し、フォトキャリア（電子および正孔）を発生させる。すなわち受光素子１００はフォトダイオードとして機能する。
受光素子１００には、中央側から外周側にかけて、メサ１３、テラス１５、溝１７およびテラス１９が形成されている。複数のメサ１３は、受光素子１００の中央部に２次元アレイ状に配列されている。各メサ１３はフォトダイオードとして機能し、メサ１３間はｎ型半導体層１２に達する溝で分離され、かつｎ型半導体層１２および半導体基板１０により電気的に接続される。メサ１３の設けられた領域を囲むようにテラス１５が設けられている。テラス１５よりも外周側には、テラス１５を囲む溝１７が設けられ、溝１７はさらに外周側のテラス１９に囲まれる。
メサ１３、テラス１５および１９はｎ型半導体層１２、光吸収層１４、ｐ型半導体層１６およびｐ型コンタクト層１８を含む。メサ１３の高さはテラス１５の高さと等しい。溝１７はｎ型半導体層１２に達している。図１（ａ）に示すテラス１５の幅Ｗ１は例えば５０〜１００μｍ、溝１７の幅Ｗ２は例えば５０〜２００μｍ、テラス１９の幅Ｗ３は例えば５５〜３００μｍである。テラス１５の幅Ｗ１はメサ１３の幅よりも大きく、例えばメサ１３の幅の２倍以上である。
図１（ｂ）に示すように、メサ１３、テラス１５および１９の表面（上面および側面）、溝１７の内側の面は、絶縁膜２０により覆われている。絶縁膜２０は、例えば厚さ１００〜４００ｎｍの酸化シリコン（ＳｉＯ２）または窒化シリコン（ＳｉＮ）などの絶縁体により形成されている。絶縁膜２０は、メサ１３の上に開口部２０ａ（第１開口部）を有し、溝１７の内側に開口部２０ｂ（第２開口部）を有する。開口部２０ａからはｐ型コンタクト層１８が露出し、開口部２０ｂからはｎ型半導体層１２が露出する。
電極２２はメサ１３の上に設けられ、開口部２０ａから露出するｐ型コンタクト層１８に接触する。電極２４は、テラス１５の上から溝１７の内側、およびテラス１９の上にかけて設けられ、開口部２０ｂから露出するｎ型半導体層１２に接触する。電極２２および２４は、例えば下から順に積層したチタン（Ｔｉ）、白金（Ｐｔ）および金（Ａｕ）で形成されている。
メサ１３の上にはバンプ２６（第１バンプ）が設けられている。バンプ２６は円柱状であり、電極２２の上面に接触する。ｐ型コンタクト層１８、電極２２およびバンプ２６は互いに電気的に接続されている。テラス１５の上から溝１７の内側にかけてバンプ２８（第２バンプ）が設けられている。図１（ａ）においてバンプ２８を斜線で示した。図１（ｂ）に示すように、バンプ２８は電極２４の表面に接触している。ｎ型半導体層１２、電極２４およびバンプ２８は互いに電気的に接続されている。ｐ型半導体層１６およびｐ型コンタクト層１８はｐ型であり、電極２２はｐ型電極として機能する。ｎ型半導体層１２はｐ型半導体層１６などとは異なる導電型を有し、ｎ型である。電極２４はｎ型電極として機能する。電極２４およびバンプ２８は基準電位（例えばグランド電位）を有する。バンプ２６および２８は例えばインジウム（Ｉｎ）などの金属により形成されている。
図１（ａ）に示すように、バンプ２８はリング形状を有し、受光素子１００のうちメサ１３が設けられた領域を完全に囲む。バンプ２８の幅Ｗ４はバンプ２６の直径Ｒ１より大きく、例えば直径Ｒ１の２倍以上である。バンプ２６の直径Ｒ１は例えば８〜２２μｍであり、バンプ２８の幅Ｗ４は例えば５０〜２４０μｍである。平面方向（半導体基板１０が広がる方向）におけるバンプ２８の面積は、例えば１つのバンプ２６の面積の４倍以上である。バンプ２６および２８の高さは例えば６〜１５μｍである。
（受光装置１１０）
図２は受光装置１１０を例示する断面図である。図２に示すように、受光素子１００を基板３０に実装することで受光装置１１０が形成される。基板３０は例えばシリコン（Ｓｉ）で形成され、電極３２および３４、配線３６を有する。バンプ２６および２８は、受光素子１００と基板３０との電気的な接続に用いられる。電極３２はバンプ２６と電気的に接続され、電極３４はバンプ２８と電気的に接続される。配線３６は、受光素子１００のバンプに接触しない。
赤外光を例えば半導体基板１０側から入射すると、受光素子１００の光吸収層１４は赤外光を吸収しフォトキャリア（電子および正孔）を発生させる。フォトキャリアは、電極２２、バンプ２６および電極３２を通じて基板３０に流れ、また電極２４、バンプ２８および電極３４を通じて基板に流れる。基板３０にはフォトキャリアに起因した電流が流れ、基板３０は電流に基づいて例えば画像情報を生成する。
（受光素子１００の製造方法）
図３（ａ）から図５（ｃ）は受光素子１００の製造方法を例示する断面図である。図３（ａ）に示すように、ウェハ状態の半導体基板１０の上に、ｎ型半導体層１２、光吸収層１４、ｐ型半導体層１６およびｐ型コンタクト層１８を順にエピタキシャル成長する。ｎ型半導体層１２の成長に先立ち、バッファ層を半導体基板１０の上に成長してもよい。成長には、例えば有機金属気相成長（ＭＯＣＶＤ：Metal Organic Chemical Vapor Deposition）法または分子線エピタキシー（ＭＢＥ：Molecular Beam Epitaxy）法などを用いることができる。ｐ型コンタクト層１８の上面に、例えばＳｉＮまたはＳｉＯ２などの絶縁体膜マスク層４０を設ける。絶縁体膜マスク層４０の上にフォトレジストを塗布し、レジストパターニングを行うことでレジストマスク４２を形成する。図３（ｂ）に示すように、レジストマスク４２を用いたドライエッチングにより絶縁体膜マスク層４０を成型する。絶縁体膜マスク層４０の中央側に開口部４０ａが形成され、外周側には中央部を囲むような開口部４０ｂが形成される。開口部４０ａは例えば格子状であり、開口部４０ｂは開口部４０ａを囲むリング状の溝である。
図３（ｃ）に示すように、レジストマスク４２を除去した後、例えばハロゲン系ガスを用いたドライエッチングを行う。半導体層１１のうち開口部４０ａまたは４０ｂから露出する部分がエッチングされることで、複数のメサ１３、溝１７、テラス１５および１９が形成される。溝１７の底面はｎ型半導体層１２である。図３（ｄ）に示すように、例えばバッファードフッ酸などにより絶縁体膜マスク層４０を除去する。その後、例えば化学気相成長（ＣＶＤ：Chemical Vapor Deposition）法により絶縁膜２０を形成する。絶縁膜２０はメサ１３、テラス１５および１９の表面、溝１７の底面を覆う。
図４（ａ）に示すように、絶縁膜２０の上にフォトレジストを塗布し、レジストパターニングを行うことで、レジストマスク４４を形成する。絶縁膜２０のうち、メサ１３上の部分および溝１７の内側の部分がレジストマスク４４から露出する。図４（ｂ）に示すように、例えばフッ素系ガスを用いたドライエッチング、またはバッファードフッ酸を用いたウェットエッチングなどにより、レジストマスク４４から露出する絶縁膜２０を除去する。これにより絶縁膜２０に開口部２０ａおよび２０ｂが形成される。図４（ｃ）に示すように、レジストマスク４４を除去した後、フォトレジストを塗布し、レジストパターニングを行うことで、レジストマスク４６を形成する。レジストマスク４６からは絶縁膜２０の開口部２０ａが露出し、また絶縁膜２０のテラス１５上から開口部２０ｂおよびテラス１９上にかけた領域が露出する。なおレジストマスク４６は上から半導体層１１に向けて幅の小さくなる形状を有する。
図５（ａ）に示すように、例えば蒸着法およびリフトオフ法により、開口部２０ａから露出するｐ型コンタクト層１８の上面に電極２２を設け、テラス１５から溝１７の内側、さらにテラス１９の上にかけて電極２４を設ける。電極２４は開口部２０ｂから露出するｎ型半導体層１２の上面に接触する。図５（ｂ）に示すように、フォトレジストを塗布し、レジストパターニングを行うことで、レジストマスク４８を形成する。レジストマスク４８から電極２２、および電極２４のうちテラス１５の上から溝１７の内側にかけた部分が露出する。レジストマスク４８は、上から半導体層１１に向けて幅の小さくなる形状を有し、レジストマスク４６よりも厚い。図５（ｃ）に示すように、蒸着法およびリフトオフ法により、バンプ２６および２８を形成する。ウェハをダイシングすることで受光素子１００を形成する。
（比較例）
図６（ａ）は比較例に係る受光素子１００Ｒを例示する平面図である。図６（ｂ）は比較例に係る受光装置１１０Ｒを例示する断面図である。第１実施形態と同様の構成については説明を省略する。図６（ａ）および図６（ｂ）に示すように、電極２４の上に複数のバンプ２７が設けられ、絶縁膜２０の溝１７よりも外周側の領域にバンプ２９が設けられている。図６（ｂ）に示すように、バンプ２７は基板３０の電極３４に接続され、バンプ２９は基板３０の配線３６に接触している。バンプ２６、２７および２９の直径は等しい。
次に応力について説明する。受光装置は例えば７７Ｋなどの低温において使用されることがある。このため、受光装置は室温から低温、および低温から室温への温度変化にさらされ、温度変化により受光素子および基板３０は収縮または膨張する。受光素子の半導体基板１０は例えばｎ型ＧａＳｂ基板であり、熱膨張係数は７．７４×１０−６（Ｋ−１）である。基板３０は例えばＳｉで形成され、熱膨張係数は３．３４×１０−６（Ｋ−１）である。こうした熱膨張係数の違いに起因して、半導体基板１０は基板３０よりも大きく変形する。このため、バンプに応力（サーマルストレス）が加わり、バンプの半導体基板１０からの剥離などが発生する恐れがある。特に半導体基板１０のうち外周部は中央側よりも大きく変形するため、応力も大きくなる。
図６（ａ）および図６（ｂ）に示した比較例においては、半導体基板１０の外周部に設けられた複数のバンプ２９に応力が加わる。このため、バンプ２６および２７は応力から保護される。しかし、バンプ２９を半導体基板１０の外周部に設けるために半導体基板１０が大型化する。また、図６（ｂ）に示したように、バンプ２９と基板３０の配線３６とが接触することで、配線３６に圧力が加わり、配線３６が損傷することがある。
これに対し、本実施形態では、図１（ａ）から図２に示したように、メサ１３よりも外周側のテラス１５の上にバンプ２８を設ける。バンプ２８はバンプ２６よりも外周側に設けられているため、バンプ２８にはバンプ２６よりも大きな応力がかかる。しかしバンプ２８はバンプ２６よりも大きな寸法（幅）を有しており、バンプ２８と電極２４との接触面積も大きいため、接合強度も高い。このため応力が加わってもバンプ２８の電極２４からの剥離が抑制される。またバンプ２８の強度が高いため、応力によるバンプ２８の破損（クラックなど）が抑制される。バンプ２８に応力が集中するため、バンプ２８に比べてバンプ２６に加わる応力は小さい。したがって、バンプ２６の電極２２からの剥離は抑制される。このように、バンプ２８により、受光素子１００および受光装置１１０の応力による破損を抑制することができる。
半導体基板１０の外周部に多数のバンプ２９を設けなくてよいため、受光素子１００の小型化が可能である。バンプ２８は基板３０の電極３４と対向する位置にあればよく、配線３６と対向しなくてよい。したがって、半導体基板１０も電極３４と対向すればよく、配線３６と対向するほど大型化しなくてよい。この結果、比較例に比べて受光素子１００を小型化することができる。バンプ２８は基板３０の電極３４と接合しており、配線３６とは接触しない。このため配線３６にはバンプ２８から力が加わることがなく、配線３６の損傷は抑制される。
平面方向（半導体基板１０が広がる方向）におけるバンプ２８の面積は、例えば１つのバンプ２６の面積の４倍以上である。バンプ２８と電極２４との接触面積が増大し、接合強度が大きく向上するため、バンプ２８の剥離は効果的に抑制される。バンプ２８の面積は、バンプ２６と比較して、例えば２倍以上、８倍以上、または１０倍以上などでもよい。
図１（ｂ）に示すように、バンプ２８は、テラス１５の上から溝１７の内側にかけて設けられ、電極２４の表面を覆う。電極２４はテラス１５の側面などにおいて断線しやすいが、バンプ２８がテラス１５の側面においても電極２４を覆うため、断線が抑制される。またバンプ２８と電極２４との接触する領域はテラス１５から溝１７にかけた広い範囲となり、接合強度が高くなる。このためバンプ２８の剥離が抑制される。またバンプ２８がテラス１５から溝１７にかけた大きな幅を有するため、バンプ２８の応力による破損が抑制される。
図１（ａ）に示すように、バンプ２８はリング形状を有し、半導体層１１のうちメサ１３が設けられた領域を囲む。これによりバンプ２８と電極２４との接触面積が大きくなり、接合強度が向上し、バンプ２８の剥離が効果的に抑制される。また、平面内の全方向においてバンプ２８に応力が集中し、バンプ２６に加わる応力は小さくなる。半導体基板１０の四隅には特に大きな応力がかかるが、リング状のバンプ２８により、内側のバンプ２６などを応力から保護する。このため応力による受光素子１００の破損を抑制することができる。
絶縁膜２０は、メサ１３およびテラス１５それぞれの上面および側面を覆う。これにより半導体層１１を異物および水分などから保護することができる。また、光吸収層１４、ｐ型半導体層１６およびｐ型コンタクト層１８と電極２４との間に絶縁膜２０が介在するため、これらは絶縁される。絶縁膜２０の開口部２０ａにおいて、電極２２とｐ型コンタクト層１８とが接触し、開口部２０ｂにおいて電極２４とｎ型半導体層１２とが接触する。これにより電極２２はｐ型電極、電極２４はｎ型電極として機能する。
（第２実施形態）
図７（ａ）は第２実施形態に係る受光素子２００を例示する平面図である。第１実施形態と同じ構成については説明を省略する。図７（ａ）に示すように、２つのＵ字型のバンプ５０が設けられ、メサ１３の設けられた領域を２つのバンプ５０により囲む。バンプ５０は半導体基板１０の三辺に沿うように延伸する。１つのバンプ５０の幅は１つのバンプ２６の直径よりも大きく、バンプ５０の面積はバンプ２６の例えば４倍以上である。バンプ５０の間には空隙５１が形成され、メサ１３が配置された半導体基板１０の中央部と、半導体基板１０の外周部とは、空隙５１とを通じて連通する。
図７（ｂ）は受光装置２１０を例示する断面図である。受光素子２００と基板３０との間にアンダーフィル５２が充填されている。バンプ２６を基板３０の電極３２と接続し、バンプ５０を電極３４と接続した後、例えばシリンジなどを用いて空隙５１から樹脂（アンダーフィル５２）を注入する。アンダーフィル５２を固化することで、受光装置２１０が形成される。
第２実施形態によれば、第１実施形態と同様に、応力による受光素子２００および受光装置２１０の破損を抑制し、受光素子２００の大型化および基板３０の損傷を抑制することができる。また、バンプ５０間の空隙５１からアンダーフィル５２などを受光素子２００の中央側に注入することができる。アンダーフィル５２により受光素子２００と基板３０とに加わる応力を緩和することができる。
（第３実施形態）
図８は第３実施形態に係る受光素子３００を例示する平面図である。第１実施形態と同じ構成については説明を省略する。図８に示すように、Ｌ字型のバンプ５４が４つ設けられ、メサ１３の設けられた領域を４つのバンプ５４により覆う。１つのバンプ５４は半導体基板１０の二辺に沿うように配置されている。１つのバンプ５４の幅は１つのバンプ２６の直径よりも大きく、バンプ５４の面積はバンプ２６の例えば４倍以上である。４つのバンプ５４は四角形を形成し、各バンプ５４は四角形の四隅に位置する。２つのバンプ５４は離間しており、その間には空隙５１が形成されている。各バンプ５４は、受光素子３００と基板との接続に用いられる。
第３実施形態によれば、第１実施形態と同様に、応力による受光素子３００および受光装置の破損を抑制し、受光素子３００の大型化および基板３０の損傷を抑制することができる。また空隙５１からアンダーフィル５２を注入することで、受光素子３００と基板３０とにかかる応力を緩和することができる。バンプ５４は３つでもよいし、４つ以上でもよい。応力により例えば１つのバンプ５４が剥離しても、他のバンプ５４が電極２４および３４と接続されていればよい。特に応力が大きくなる半導体基板１０の四隅それぞれにバンプ５４が設けられていることが好ましい。第２および第３実施形態において、バンプは半導体基板１０の少なくとも二辺に沿い、四角形の四隅に配置される。
（第４実施形態）
図９は第４実施形態に係る受光素子４００を例示する平面図である。第１実施形態と同じ構成については説明を省略する。図９に示すように、円柱状のバンプ５６が４つ設けられている。４つのバンプ５６は四角形を形成し、各バンプ５６は四角形の四隅に位置する。バンプ５６の直径Ｒ２はバンプ２６の直径Ｒ１よりも大きく、例えばＲ１の２倍以上である。バンプ５６の面積はバンプ２６の例えば４倍以上である。
第４実施形態によれば、第１実施形態と同様に、応力による受光素子４００および受光装置の破損を抑制し、受光素子４００の大型化および基板３０の損傷を抑制することができる。またバンプ５６間の空隙からアンダーフィル５２を注入することで、受光素子４００と基板３０とにかかる応力を緩和することができる。バンプ５６は少なくとも３つであることが好ましく、４つ以上でもよい。特に、応力が大きくなる半導体基板１０の四隅のそれぞれにバンプ５６が設けられていることが好ましい。
第１〜第４実施形態において、半導体基板１０はＧａＳｂ、基板３０はＳｉで形成されるとした。半導体基板１０と基板３０とで熱膨張係数が異なり、このため応力が発生することがある。第１〜第４実施形態によれば、幅の大きなバンプを設けることで、応力による破損を抑制することができる。また、超格子構造を有するｎ型半導体層１２、光吸収層１４およびｐ型半導体層１６は、ＧａＳｂの半導体基板１０と格子整合する。半導体基板１０は他の化合物半導体で形成されてもよいし、基板３０はＳｉ以外の半導体または絶縁体などで形成されてもよい。
受光素子が赤外光を受光する赤外線センサである場合、例えば液体窒素温度（７７Ｋ）に冷却して動作させる。この際の温度変化により、大きな応力が発生する。第１〜第４実施形態によれば、幅の大きなバンプを設けることで、応力による破損を抑制することができる。
ｎ型半導体層１２はＧａＳｂ／ＩｎＡｓのｎ型超格子層であり、ｐ型半導体層１６はＧａＳｂ／ＩｎＡｓのｐ型超格子層である。ｎ型半導体層１２とｐ型半導体層１６とは互いに異なる導電型を有していればよく、一方がｎ型、他方をｐ型とする。ｎ型半導体層１２、光吸収層１４およびｐ型半導体層１６は、ＧａＳｂ／ＩｎＡｓ超格子構造以外の化合物半導体など、他の半導体で形成されてもよい。光吸収層１４は赤外光帯域とは異なる波長の光を吸収し、ｎ型半導体層１２およびｐ型半導体層１６が当該波長の光に対して高い透過率（例えば９０％以上）を有してもよい。
１０ 半導体基板
１１ 半導体層
１２ ｎ型半導体層
１３ メサ
１４ 光吸収層
１５、１９ テラス
１６ ｐ型半導体層
１７ 溝
１８ ｐ型コンタクト層
２０ 絶縁膜
２０ａ、２０ｂ、４０ａ、４０ｂ 開口部
２２、２４、３２、３４ 電極
２６、２７、２８、２９、５２、５４、５６ バンプ
３０ 基板
３６ 配線
４０ 絶縁体膜マスク層
４２、４４、４６、４８ レジストマスク
５１ 空隙
５２ アンダーフィル
１００、２００、３００、４００ 受光素子
１１０、２１０ 受光装置

Claims (10)

  1. 化合物半導体で形成された半導体基板と、
    前記半導体基板の上に設けられた第１の導電型の第１層、前記第１層の上に設けられた光吸収層、前記光吸収層の上に設けられた第２の導電型の第２層、および前記第２層の上に設けられた前記第２の導電型の第３層を含み、前記半導体基板の中央側から外周側にかけて複数のメサ、テラスおよび溝が形成された半導体層と、
    前記メサの上に設けられ、前記第３層と電気的に接続された第１電極と、
    前記第１電極の上に設けられ、前記第１電極と電気的に接続された第１バンプと、
    前記テラスの上から前記溝の内側にかけて設けられ、前記第１層と電気的に接続された第２電極と、
    前記第１バンプよりも大きな寸法を有し、前記テラスの上に設けられ、前記第２電極と電気的に接続された第２バンプと、を具備し、
    前記メサおよび前記テラスは、前記第１層、前記光吸収層、前記第２層および前記第３層を含み、
    前記溝は前記第１層まで到達し、
    前記第２電極は前記溝の内側において前記第１層と接触する受光素子。
  2. 前記半導体基板が広がる方向における前記第２バンプの面積は前記第１バンプの面積の４倍以上である請求項１に記載の受光素子。
  3. 前記第２バンプは、前記テラスの上から前記溝の内側にかけて設けられ、前記第２電極の表面を覆う請求項１または２に記載の受光素子。
  4. 前記メサおよび前記テラスそれぞれの上面および側面を覆う絶縁膜を具備し、
    前記絶縁膜は前記メサの上において第１開口部を有し、かつ前記溝の内側において第２開口部を有し、
    前記第１電極は、前記第１開口部から露出する前記第３層と接触し、
    前記第２電極は、前記第２開口部から露出する前記第１層と接触する請求項１から３のいずれか一項に記載の受光素子。
  5. 前記第２バンプはリング形状を有し、前記半導体層のうち前記複数のメサが設けられた領域を囲む請求項１から４のいずれか一項に記載の受光素子。
  6. 前記第２バンプは、前記半導体基板の少なくとも二辺に沿う形状を有し、
    複数の前記第２バンプは互いに離間し、それぞれが四隅に位置する四角形を形成する請求項１から４のいずれか一項に記載の受光素子。
  7. ４つの柱状の前記第２バンプは、それぞれが四隅に位置する四角形を形成する請求項１から４のいずれか一項に記載の受光素子。
  8. 前記半導体基板はガリウムアンチモンで形成されている請求項１から７のいずれか一項に記載の受光素子。
  9. 前記第１層はｎ型超格子層であり、
    前記第２層はｐ型超格子層である請求項１から８のいずれか一項に記載の受光素子。
  10. 請求項１から９のいずれか一項に記載の受光素子と、
    シリコン基板と、を具備し、
    前記受光素子は、前記第１バンプおよび前記第２バンプにより前記シリコン基板と電気的に接続される受光装置。
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