JP2018198257A - Wiring board - Google Patents

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JP2018198257A
JP2018198257A JP2017102253A JP2017102253A JP2018198257A JP 2018198257 A JP2018198257 A JP 2018198257A JP 2017102253 A JP2017102253 A JP 2017102253A JP 2017102253 A JP2017102253 A JP 2017102253A JP 2018198257 A JP2018198257 A JP 2018198257A
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insulating layer
conductor
connection pad
wiring board
signal conductor
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JP6882069B2 (en
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久義 和田
Hisayoshi Wada
久義 和田
誠司 服部
Seiji Hattori
誠司 服部
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Kyocera Corp
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Abstract

To provide a wiring board excellent in transmission characteristic.SOLUTION: A wiring board has, on an upper surface of a first insulation layer 2: a laminate body 3 formed by stacking a second insulation layer 8, a third insulation layer 9, and a fourth insulation layer 10 in that order; a connection pad 5 located on an upper surface of the fourth insulation layer 10; veer holes 11 located in the second to fourth insulation layers 8 to 10; signal conductors 4S located on an upper surface of the second insulation layer 8 and in the veer holes 11 and connected to the connection pad 5; and grounding conductors 4G located in the upper surfaces of the first to fourth insulation layers 2 and 8 to 10. The grounding conductor 4G located on the upper surface of the second insulation layer 8 is located along the signal conductor 4S in a top view and has a non-formation part in an area overlapping at least the connection pad 5. The grounding conductor 4G located on the upper surface of the first insulation layer 2 and on the upper surface of the third insulation layer 9 are located in an area overlapping at least the signal conductor 4S in a top view and has a non-formation part in an area overlapping the connection pad 5.SELECTED DRAWING: Figure 3

Description

本開示は、電子部品を搭載する配線基板に関するものである。   The present disclosure relates to a wiring board on which electronic components are mounted.

現在、高周波信号を10Gbps以上の高速で伝送するための配線基板が開発されており、大容量の信号を高速で伝送するスーパーコンピューター等の電子機器に用いられる。このような配線基板には、信号用導体にDCカットコンデンサと呼ばれる電子部品が接続されることがある。DCカットコンデンサは、直流電流成分を除去して高周波信号を効率的に伝送することで電子機器を安定的に作動させる機能を有している。   Currently, a wiring board for transmitting a high-frequency signal at a high speed of 10 Gbps or more has been developed, and is used for an electronic device such as a supercomputer that transmits a large-capacity signal at a high speed. In such a wiring board, an electronic component called a DC cut capacitor may be connected to the signal conductor. The DC cut capacitor has a function of stably operating an electronic device by removing a direct current component and efficiently transmitting a high frequency signal.

特開2003−298204号公報JP 2003-298204 A

配線基板は、信号用導体の微細化が進んでいる。しかし、DCカットコンデンサ等の電子部品の電極サイズは、信号用導体のサイズよりも大きい。このため、電子部品の電極と信号用導体とを電気的に接続する接続パッドは、信号用導体よりも大きくなることから、接続パッドと信号用導体との間のインピーダンス整合をとることが困難になり高周波信号の伝送特性が悪くなるため電子機器が安定的に作動しない場合がある。   In the wiring board, the miniaturization of the signal conductor is progressing. However, the electrode size of an electronic component such as a DC cut capacitor is larger than the size of the signal conductor. For this reason, since the connection pad that electrically connects the electrode of the electronic component and the signal conductor is larger than the signal conductor, it is difficult to achieve impedance matching between the connection pad and the signal conductor. As a result, the transmission characteristics of the high-frequency signal are deteriorated, and the electronic device may not operate stably.

本開示の配線基板は、第1絶縁層と、第1絶縁層の上面に、第2絶縁層、第3絶縁層および第4絶縁層の順番で積層されて成る積層体と、第4絶縁層の上面に位置しており、電子部品を介して互いに電気的に接続される一対の接続パッドと、第3絶縁層および第4絶縁層に位置する複数の信号用ビアホールと、第2絶縁層の上面および各々の信号用ビアホール内に位置しており、一対の接続パッドに電気的に接続している信号用導体と、第1〜第4絶縁層の上面に位置する接地用導体と、を有しており、第2絶縁層の上面に位置する接地用導体は、上面視において、信号用導体に沿って位置しており、少なくとも接続パッドに重なる領域に非形成部を有しているとともに、第1絶縁層の上面および第3絶縁層の上面に位置する接地用導体は、上面視において、少なくとも第2絶縁層上面の信号用導体に重なる領域に位置しており、接続パッドに重なる領域に非形成部を有していることを特徴とするものである。   A wiring board of the present disclosure includes a first insulating layer, a stacked body in which a second insulating layer, a third insulating layer, and a fourth insulating layer are stacked in this order on the top surface of the first insulating layer, and a fourth insulating layer A pair of connection pads electrically connected to each other through electronic components, a plurality of signal via holes located in the third insulating layer and the fourth insulating layer, and a second insulating layer A signal conductor electrically connected to the pair of connection pads, and a grounding conductor located on the upper surface of the first to fourth insulating layers. The grounding conductor located on the upper surface of the second insulating layer is located along the signal conductor in a top view, and has a non-formed portion at least in a region overlapping with the connection pad, The grounding conductor located on the upper surface of the first insulating layer and the upper surface of the third insulating layer is: In plane view, is characterized in that it comprises at least a second is located in the region overlapping the signal conductor of the insulating layer top surface, a non-formation portion in a region overlapping the connection pad.

本開示の配線基板によれば、電子機器が安定的に作動することが可能な伝送特性に優れた配線基板を提供することができる。   According to the wiring board of the present disclosure, it is possible to provide a wiring board having excellent transmission characteristics that allows electronic devices to operate stably.

図1は、本開示の配線基板の第1の実施形態例を示す概略上面図である。FIG. 1 is a schematic top view illustrating a first embodiment of a wiring board according to the present disclosure. 図2は、本開示の配線基板の第1の実施形態例を示す概略断面図である。FIG. 2 is a schematic cross-sectional view illustrating a first embodiment of a wiring board according to the present disclosure. 図3A〜図3Dは、本開示の配線基板の第1の実施形態例の要部である第4、第3、第2および第1各絶縁層の上面を示す上面図である。3A to 3D are top views showing the top surfaces of the fourth, third, second, and first insulating layers, which are the main parts of the first embodiment of the wiring board according to the present disclosure. 図4A〜図4Dは、本開示の配線基板の第2の実施形態例の要部である第4、第3、第2および第1各絶縁層の上面を示す上面図である。4A to 4D are top views illustrating the top surfaces of the fourth, third, second, and first insulating layers, which are the main parts of the second embodiment of the wiring board according to the present disclosure.

次に、図1〜図3を基にして本開示の実施形態に係る配線基板1について説明する。図1は、本開示の配線基板1の第1の実施形態例を示す上面図である。図2は、図1に示すX−X間を通る断面図である。図3A〜図3Dは、上面視における第4絶縁層10、第3絶縁層9、第2絶縁層8、および第1絶縁層2の同一領域を示したものである。   Next, the wiring board 1 according to the embodiment of the present disclosure will be described with reference to FIGS. FIG. 1 is a top view illustrating a first embodiment of a wiring board 1 according to the present disclosure. 2 is a cross-sectional view taken along the line XX shown in FIG. 3A to 3D show the same region of the fourth insulating layer 10, the third insulating layer 9, the second insulating layer 8, and the first insulating layer 2 in a top view.

配線基板1は、第1絶縁層2と、積層体3と、配線導体4と、接続パッド5と、ソルダーレジスト6と、を有している。   The wiring board 1 includes a first insulating layer 2, a laminated body 3, a wiring conductor 4, a connection pad 5, and a solder resist 6.

第1絶縁層2は、例えばガラス繊維にエポキシ樹脂やビスマレイミドトリアジン樹脂等の絶縁樹脂を含浸させた絶縁材料で構成されている。第1絶縁層2は、上面と下面とを貫通する複数のスルーホール7を有している。第1絶縁層2は、配線基板1としての機械的な強度を確保する部分である。第1絶縁層2の厚みは、100〜1200μmに設定されている。スルーホール7の直径は、50〜300μmに設定されている。   The first insulating layer 2 is made of, for example, an insulating material obtained by impregnating glass fiber with an insulating resin such as an epoxy resin or a bismaleimide triazine resin. The first insulating layer 2 has a plurality of through holes 7 penetrating the upper surface and the lower surface. The first insulating layer 2 is a part that ensures mechanical strength as the wiring board 1. The thickness of the first insulating layer 2 is set to 100 to 1200 μm. The diameter of the through hole 7 is set to 50 to 300 μm.

第1絶縁層2は、例えば強化用のガラス繊維にエポキシ樹脂やビスマレイミドトリアジン樹脂等の熱硬化性樹脂を含浸させたプリプレグを複数積層して、加熱下でプレス加工を行うことで平板状に形成される。スルーホール7は、第1絶縁層2にドリル加工、レーザー加工またはブラスト加工等の処理を行うことで形成される。   The first insulating layer 2 is formed into a flat plate shape by, for example, laminating a plurality of prepregs in which a glass fiber for reinforcement is impregnated with a thermosetting resin such as an epoxy resin or a bismaleimide triazine resin, and performing pressing under heating. It is formed. The through hole 7 is formed by performing processing such as drilling, laser processing, or blasting on the first insulating layer 2.

積層体3は、第1絶縁層2の上面に位置している。積層体3は、第1絶縁層2の上面方向に、第2絶縁層8、第3絶縁層9および第4絶縁層10の順番で積層された各絶縁層により構成されている。積層体3は、配線導体4の配置領域を確保する機能を有している。   The stacked body 3 is located on the upper surface of the first insulating layer 2. The stacked body 3 is composed of insulating layers stacked in the order of the second insulating layer 8, the third insulating layer 9, and the fourth insulating layer 10 in the upper surface direction of the first insulating layer 2. The multilayer body 3 has a function of securing an arrangement area for the wiring conductor 4.

第2〜第4絶縁層8〜10は、例えばポリイミド樹脂、エポキシ樹脂またはビスマレイミドトリアジン樹脂等の絶縁材料から成り、内部には絶縁粒子が分散されている。第2〜第4絶縁層8〜10は、配線導体4を底面とする複数のビアホール11を有している。第2〜第4絶縁層8〜10の厚みは、5〜50μmに設定されている。ビアホール11の直径は、10〜65μmに設定されている。   The 2nd-4th insulating layers 8-10 consist of insulating materials, such as a polyimide resin, an epoxy resin, or a bismaleimide triazine resin, for example, and the insulating particle is disperse | distributed inside. The second to fourth insulating layers 8 to 10 have a plurality of via holes 11 having the wiring conductor 4 as a bottom surface. The thicknesses of the second to fourth insulating layers 8 to 10 are set to 5 to 50 μm. The diameter of the via hole 11 is set to 10 to 65 μm.

第2〜第4絶縁層8〜10は、例えばポリイミド樹脂、エポキシ樹脂またはビスマレイミドトリアジン樹脂等の熱硬化性樹脂を含む絶縁層用のフィルムを、真空下で被着物の表面に貼着して熱硬化することで形成される。熱硬化性樹脂内には、酸化ケイ素等の絶縁粒子を分散させておいても構わない。   The second to fourth insulating layers 8 to 10 are formed by sticking a film for an insulating layer containing a thermosetting resin such as a polyimide resin, an epoxy resin, or a bismaleimide triazine resin to the surface of an adherend under vacuum. It is formed by thermosetting. Insulating particles such as silicon oxide may be dispersed in the thermosetting resin.

なお、第1絶縁層2の下面には、複数の積層用の絶縁層12が位置している。これらの絶縁層12も、第1絶縁層2の下面において、配線導体4の配置領域を確保する機能を有している。各積層用の絶縁層12も、複数のビアホール11を有している。積層用の絶縁層12は、第2〜第4絶縁層8〜10と同じ方法で形成される。   A plurality of insulating layers 12 for lamination are located on the lower surface of the first insulating layer 2. These insulating layers 12 also have a function of securing the arrangement area of the wiring conductor 4 on the lower surface of the first insulating layer 2. Each laminated insulating layer 12 also has a plurality of via holes 11. The insulating layer 12 for stacking is formed by the same method as the second to fourth insulating layers 8 to 10.

配線導体4は、第1〜第4絶縁層2、8〜10の上面、スルーホール7の内部、およびビアホール11の内部に位置している。配線導体4は、信号用導体4S、接地用導体4Gを含んでいる。第4絶縁層10の表面に位置する配線導体4の一部は、半導体素子と接続される半導体素子用パッド13として機能する。また、積層用の絶縁層12についても、第1〜第4絶縁層2、8〜10と同様に、配線導体4が位置している。上下の配線導体4のうち電気的な接続が必要なもの同士は、例えばスルーホール7を介して互いに電気的に接続されている。   The wiring conductor 4 is located on the top surfaces of the first to fourth insulating layers 2 and 8 to 10, the inside of the through hole 7, and the inside of the via hole 11. The wiring conductor 4 includes a signal conductor 4S and a grounding conductor 4G. A part of the wiring conductor 4 located on the surface of the fourth insulating layer 10 functions as a semiconductor element pad 13 connected to the semiconductor element. Moreover, the wiring conductor 4 is located also about the insulating layer 12 for lamination | stacking similarly to the 1st-4th insulating layers 2 and 8-10. Of the upper and lower wiring conductors 4, those requiring electrical connection are electrically connected to each other through, for example, through holes 7.

信号用導体4Sは、第2絶縁層8の上面において帯状に延びているとともに、第3絶縁層9および第4絶縁層10に位置するビアホール11内に位置している。   The signal conductor 4 </ b> S extends in a band shape on the upper surface of the second insulating layer 8 and is located in the via hole 11 located in the third insulating layer 9 and the fourth insulating layer 10.

接地用導体4Gは、第2絶縁層8の上面において帯状の信号用導体4Sに沿って所定の間隔をあけて平坦状に位置している。さらに、第2絶縁層8の上面に位置する接地用導体4Gは、上面視において少なくとも接続パッド5に重なる領域に非形成部を有している。接続パッド5の詳細については後述する。また、第1絶縁層2の上面および第3絶縁層9の上面に位置する接地用導体4Gは、上面視において、少なくとも第2絶縁層8上面の信号用導体4Sに重なる領域に位置しており、接続パッド5に重なる領域に非形成部を有している。言い換えれば、信号用導体4Sを挟む上下において、接地用導体4Gが信号用導体4Sの上下に位置している。また、この接地用導体4Gは、接続パッド5には重ならないようになっている。   The grounding conductor 4G is positioned flat on the upper surface of the second insulating layer 8 with a predetermined interval along the strip-shaped signal conductor 4S. Further, the grounding conductor 4G located on the upper surface of the second insulating layer 8 has a non-formed portion at least in a region overlapping with the connection pad 5 in a top view. Details of the connection pad 5 will be described later. Further, the grounding conductor 4G located on the upper surface of the first insulating layer 2 and the upper surface of the third insulating layer 9 is located in a region overlapping at least the signal conductor 4S on the upper surface of the second insulating layer 8 in a top view. The non-forming portion is provided in a region overlapping the connection pad 5. In other words, the grounding conductor 4G is located above and below the signal conductor 4S above and below the signal conductor 4S. Further, the grounding conductor 4G does not overlap the connection pad 5.

このような配線導体4は、例えばセミアディティブ法を用いて、銅めっき等の良導電性金属により形成されている。   Such a wiring conductor 4 is formed of a highly conductive metal such as copper plating using, for example, a semi-additive method.

接続パッド5は、第4絶縁層10の上面に位置している。接続パッド5は、互いに対向する2つがペアを形成しており、複数のペアが配置されている。各ペアにおけるそれぞれの接続パッド5は、第4絶縁層10のビアホール11内に位置する信号用導体4Sと電気的に接続されている。そして、各ペアのそれぞれの接続パッド5に橋渡しする態様で、電子部品Dが接続される。言い換えれば、各ペアのぞれぞれの接続パッド5が、電子部品Dを介して電気的に接続される。電子部品Dは、例えばDCカットコンデンサが挙げられる。DCカットコンデンサは、直流電流成分を除去するとともに、高速伝送に有利な高周波信号を効率的に伝送する機能を有している。   The connection pad 5 is located on the upper surface of the fourth insulating layer 10. Two connection pads 5 which form a pair are opposed to each other, and a plurality of pairs are arranged. Each connection pad 5 in each pair is electrically connected to a signal conductor 4S located in the via hole 11 of the fourth insulating layer 10. And the electronic component D is connected in the aspect bridged to each connection pad 5 of each pair. In other words, each connection pad 5 of each pair is electrically connected via the electronic component D. Examples of the electronic component D include a DC cut capacitor. The DC cut capacitor has a function of removing a direct current component and efficiently transmitting a high-frequency signal advantageous for high-speed transmission.

ソルダーレジスト6は、第4絶縁層10の上面側および第1絶縁層2の下面側に位置する積層用の絶縁層12の最下面に位置している。ソルダーレジスト6は、例えばエポキシ樹脂やポリイミド樹脂等の絶縁材料から成る。ソルダーレジスト6は、主に配線導体4を外部環境から保護するためのものである。ソルダーレジスト6は、第4絶縁層10の上面側において接続パッド5を露出する開口6A、および半導体素子を搭載するための半導体素子用パッド13を露出する開口6Bを有している。また、積層用の絶縁層12の下面側において配線導体4の一部を露出する開口6Cを有している。開口6C内に露出する配線導体4の一部は、外部の電気基板と接続するための外部基板用パッド14として機能する。   The solder resist 6 is located on the lowermost surface of the insulating layer 12 for lamination located on the upper surface side of the fourth insulating layer 10 and the lower surface side of the first insulating layer 2. The solder resist 6 is made of an insulating material such as an epoxy resin or a polyimide resin. The solder resist 6 is mainly for protecting the wiring conductor 4 from the external environment. The solder resist 6 has an opening 6A for exposing the connection pad 5 on the upper surface side of the fourth insulating layer 10 and an opening 6B for exposing the semiconductor element pad 13 for mounting the semiconductor element. Further, an opening 6 </ b> C for exposing a part of the wiring conductor 4 is provided on the lower surface side of the insulating layer 12 for lamination. A part of the wiring conductor 4 exposed in the opening 6C functions as an external substrate pad 14 for connection to an external electric substrate.

上述のように、本例の配線基板1は、第2絶縁層8の上面において接地用導体4Gが、帯状の信号用導体4Sに沿って所定の間隔をあけて平坦状に位置している。さらに、第2絶縁層8の上面において接地用導体4Gが、上面視において少なくとも接続パッド5に重なる領域に非形成部を有している。また、第1絶縁層2の上面および第3絶縁層9の上面において、接地用導体4Gが、上面視において、少なくとも第2絶縁層8上面の信号用導体4Sに重なる領域に位置しており、接続パッド5に重なる領域に非形成部を有している。これにより、信号用導体4Sは、帯状に延びる部分においてインピーダンス整合の調整が容易になる。また、接続パッド5が接地用導体4Gとの間で静電容量を持つことを抑制することで、接続パッド5と信号用導体4Sとの接続部分においてもインピーダンス整合の調整が容易になる。その結果、高周波信号の伝送特性に優れた配線基板を提供することができる。   As described above, in the wiring board 1 of this example, the grounding conductor 4G is positioned flat on the upper surface of the second insulating layer 8 with a predetermined interval along the strip-shaped signal conductor 4S. Furthermore, the grounding conductor 4G on the upper surface of the second insulating layer 8 has a non-formed portion at least in a region overlapping with the connection pad 5 in a top view. In addition, on the top surface of the first insulating layer 2 and the top surface of the third insulating layer 9, the grounding conductor 4G is located in a region overlapping at least the signal conductor 4S on the top surface of the second insulating layer 8 when viewed from above. A non-formation portion is provided in a region overlapping the connection pad 5. As a result, the signal conductor 4S can be easily adjusted for impedance matching in a portion extending in a strip shape. Further, by suppressing the connection pad 5 from having a capacitance with the grounding conductor 4G, the impedance matching can be easily adjusted at the connection portion between the connection pad 5 and the signal conductor 4S. As a result, it is possible to provide a wiring board having excellent high-frequency signal transmission characteristics.

この場合、単に接続パッド5の直下にある第3絶縁層9の上面のみにおいて接地用導体4Gが非形成部を有しているのではなく、信号用導体4Sが位置する第2絶縁層8よりも下にある第1絶縁層2の上面においても、接地用導体4Gが非形成部を有している。そのため、第2〜第4絶縁層8〜10の厚みが薄く、接続パッド5と接地用導体4Gとの間で静電容量を形成され易い場合でも、接続パッド5と対向する接地用導体4Gが存在しないため、静電容量を持つことを抑制することが容易になる。   In this case, the grounding conductor 4G does not have a non-formation portion only on the upper surface of the third insulating layer 9 just below the connection pad 5, but rather than the second insulating layer 8 where the signal conductor 4S is located. Also on the upper surface of the first insulating layer 2 below, the grounding conductor 4G has a non-formed portion. Therefore, even when the thickness of the second to fourth insulating layers 8 to 10 is thin and it is easy to form a capacitance between the connection pad 5 and the grounding conductor 4G, the grounding conductor 4G facing the connection pad 5 is Since it does not exist, it becomes easy to suppress having a capacitance.

なお、本開示は、上述の実施形態の一例に限定されるものではなく、本開示の要旨を逸脱しない範囲であれば種々の変更は可能である。例えば、上述の実施形態の一例においては、信号用導体4Sが位置するビアホール11の周囲に、接地用導体4Gの一部が位置するビアホール11が位置していない場合を示したが、図4A〜図4Dに示すように、信号用導体4Sが位置するビアホール11の周囲に、接地用導体4Gの一部が位置するビアホール11が複数位置していても構わない。これにより、接続パッド5と信号用導体4Sとの接続部分におけるインピーダンス整合の調整がさらに容易になる。また、信号用導体4Sから放出される電磁波および外部から侵入する電磁波を、接地用導体4Gにより吸収する効率性も向上することで、さらに高周波信号の伝送特性を向上させることができる。図4A〜図4Dは、上面視における第4絶縁層10、第3絶縁層9、第2絶縁層8、および第1絶縁層2の同一領域を示したものである。   Note that the present disclosure is not limited to the above-described exemplary embodiment, and various modifications can be made without departing from the gist of the present disclosure. For example, in the example of the above-described embodiment, the case where the via hole 11 where the part of the grounding conductor 4G is located is not located around the via hole 11 where the signal conductor 4S is located is shown in FIGS. As shown in FIG. 4D, a plurality of via holes 11 where a part of the grounding conductor 4G is located may be located around the via hole 11 where the signal conductor 4S is located. This further facilitates adjustment of impedance matching at the connection portion between the connection pad 5 and the signal conductor 4S. Further, by improving the efficiency of absorbing the electromagnetic wave emitted from the signal conductor 4S and the electromagnetic wave entering from the outside by the grounding conductor 4G, it is possible to further improve the high-frequency signal transmission characteristics. 4A to 4D show the same region of the fourth insulating layer 10, the third insulating layer 9, the second insulating layer 8, and the first insulating layer 2 in a top view.

また、上述の実施形態の一例においては、第3絶縁層9上に位置する接地用導体4Gの非形成部の大きさと、第1絶縁層2上に位置する接地用導体4Gの非形成部の大きさとが同じ場合を示したが、第3絶縁層9上に位置する接地用導体4Gの非形成部の大きさを、第1絶縁層2上に位置する接地用導体4Gの非形成部の大きさよりも大きく形成しても構わない。これにより、接続パッド5が、より近い位置にある接地用導体4Gと静電容量を形成することをさらに効果的に抑制することができる。   In the example of the above-described embodiment, the size of the non-forming portion of the grounding conductor 4G located on the third insulating layer 9 and the non-forming portion of the grounding conductor 4G located on the first insulating layer 2 are the same. Although the same size is shown, the size of the non-forming portion of the grounding conductor 4G located on the third insulating layer 9 is the same as the size of the non-forming portion of the grounding conductor 4G located on the first insulating layer 2. You may form larger than a magnitude | size. Thereby, it can suppress more effectively that the connection pad 5 forms an electrostatic capacitance with the grounding conductor 4G in a closer position.

1 配線基板
2 第1絶縁層
3 積層体
4S 信号用導体
4G 接地用導体
5 接続パッド
8 第2絶縁層
9 第3絶縁層
10 第4絶縁層
11 ビアホール
D 電子部品
DESCRIPTION OF SYMBOLS 1 Wiring board 2 1st insulating layer 3 Laminated body 4S Signal conductor 4G Grounding conductor 5 Connection pad 8 2nd insulating layer 9 3rd insulating layer 10 4th insulating layer 11 Via hole D Electronic component

Claims (3)

第1絶縁層と、該第1絶縁層の上面に、第2絶縁層、第3絶縁層および第4絶縁層の順番で積層されて成る積層体と、
前記第4絶縁層の上面に位置しており、電子部品を介して互いに電気的に接続される一対の接続パッドと、
前記第2〜第4絶縁層に位置する複数のビアホールと、
前記第2絶縁層の上面および一部の前記ビアホール内に位置しており、前記接続パッドに電気的に接続している信号用導体と、
前記第1〜第4絶縁層の上面に位置する接地用導体と、を有しており、
前記第2絶縁層の上面に位置する前記接地用導体は、上面視において、前記信号用導体に沿って位置しており、少なくとも前記接続パッドに重なる領域に非形成部を有しているとともに、
前記第1絶縁層の上面および前記第3絶縁層の上面に位置する前記接地用導体は、上面視において、少なくとも前記第2絶縁層上面の前記信号用導体に重なる領域に位置しており、前記接続パッドに重なる領域に非形成部を有していることを特徴とする配線基板。
A first insulating layer, and a laminate formed by laminating a second insulating layer, a third insulating layer, and a fourth insulating layer in this order on the upper surface of the first insulating layer;
A pair of connection pads located on the upper surface of the fourth insulating layer and electrically connected to each other through electronic components;
A plurality of via holes located in the second to fourth insulating layers;
A signal conductor located in an upper surface of the second insulating layer and in a part of the via hole and electrically connected to the connection pad;
A grounding conductor located on the top surface of the first to fourth insulating layers,
The grounding conductor located on the upper surface of the second insulating layer is located along the signal conductor in a top view, and has a non-formed portion at least in a region overlapping with the connection pad,
The grounding conductor located on the top surface of the first insulating layer and the top surface of the third insulating layer is located in a region overlapping at least the signal conductor on the top surface of the second insulating layer in top view, A wiring board having a non-formed portion in a region overlapping with a connection pad.
前記信号用導体が差動線路であることを特徴とする請求項1に記載の配線基板。   The wiring board according to claim 1, wherein the signal conductor is a differential line. 少なくとも前記第3絶縁層および前記第4絶縁層は、前記信号用導体が位置する前記ビアホールの周囲に、前記接地用導体の一部が位置する前記ビアホールを有していることを特徴とする請求項1または2に記載の配線基板。   At least the third insulating layer and the fourth insulating layer have the via hole in which a part of the grounding conductor is positioned around the via hole in which the signal conductor is positioned. Item 3. The wiring board according to Item 1 or 2.
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012119473A (en) * 2010-11-30 2012-06-21 Kyocer Slc Technologies Corp Wiring board
JP2013172036A (en) * 2012-02-21 2013-09-02 Fujitsu Ltd Multilayer wiring board and electronic apparatus
JP2014038972A (en) * 2012-08-18 2014-02-27 Kyocer Slc Technologies Corp Wiring board

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012119473A (en) * 2010-11-30 2012-06-21 Kyocer Slc Technologies Corp Wiring board
JP2013172036A (en) * 2012-02-21 2013-09-02 Fujitsu Ltd Multilayer wiring board and electronic apparatus
JP2014038972A (en) * 2012-08-18 2014-02-27 Kyocer Slc Technologies Corp Wiring board

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